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Quantized hall effect in single quantum wells of InAs
A243 208 MULTIPLE
Surface Science 142 (1984) 208-214 North-Holland, Amsterdam CONNECTED
QUANTIZED
RESISTANCE
REGIONS
D.A. SYPHERS Physics Department, Brown University, Providence, Rhode Island 02912, USA
F.F. FANG I B M Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA
and P.J. S T I L E S Physics Department, Brown University, Providence, Rhode Island 02912, USA
Received 8 July 1983; accepted for publication 9 September 1983 We have examined the effects of inter-connected quantized resistance regions of Si inversion layers in magnetic fields up to 15 T at low temperatures, the quantized regions are connected in two different configurations: (1) isolated regions connected by regions of low resistance, and (2) contiguous quantized regions. Connected regions of type 1 allow the tailoring of Hall resistances to any desired rational fraction of the quantized resistance. These measured resistances are easily accurate to better than a few parts in 106 of the idealized resistance. This can be done with regions of either the same or differing Landau level index. In contrast to devices of type 1, the quantized regions of type 2 do not act as separate and distinct regions. These regions act as if they interact via the Pxy term which is dominated by the region characterized by the lowest Landau level index.
Surface Science 142 (1984) 215-219 North-Holland, Amsterdam QUANTIZED E.E. M E N D E Z
215
HALL EFFECT IN SINGLE QUANTUM **, L.L. C H A N G
**, C . - A . C H A N G ,
WELLS OF lnAs * L.F. ALEXANDER
a n d L. E S A K I I B M Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA
Received 15 July 1983; accepted for publication 6 September 1983 We report magnetotransport measurements, down to 0.55 K and up to 28 T, on GaSb-InAs-GaSb heterostructures. At moderate and high fields, the magnetoresistance vanishes and the Hall resistance shows plateaus at values of h l i e 2 when i (i = 1, 2, 3.... ) magnetic levels are fully occupied. In addition, in high mobility samples, new features appear, the most prominent being a plateau at i = 5/2. The characteristics of these features are different from those observed in GaAs-GaAIAs at fractional occupation numbers, suggesting that they are likely related to the presence of holes in this system.
Surface Science 142 (1984) 208-214 North-Holland, Amsterdam CONNECTED
QUANTIZED
RESISTANCE
REGIONS
D.A. SYPHERS Physics Department, Brown University, Providence, Rhode Island 02912, USA
F.F. FANG I B M Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA
and P.J. S T I L E S Physics Department, Brown University, Providence, Rhode Island 02912, USA
Received 8 July 1983; accepted for publication 9 September 1983 We have examined the effects of inter-connected quantized resistance regions of Si inversion layers in magnetic fields up to 15 T at low temperatures, the quantized regions are connected in two different configurations: (1) isolated regions connected by regions of low resistance, and (2) contiguous quantized regions. Connected regions of type 1 allow the tailoring of Hall resistances to any desired rational fraction of the quantized resistance. These measured resistances are easily accurate to better than a few parts in 106 of the idealized resistance. This can be done with regions of either the same or differing Landau level index. In contrast to devices of type 1, the quantized regions of type 2 do not act as separate and distinct regions. These regions act as if they interact via the Pxy term which is dominated by the region characterized by the lowest Landau level index.
Surface Science 142 (1984) 215-219 North-Holland, Amsterdam QUANTIZED E.E. M E N D E Z
215
HALL EFFECT IN SINGLE QUANTUM **, L.L. C H A N G
**, C . - A . C H A N G ,
WELLS OF lnAs * L.F. ALEXANDER
a n d L. E S A K I I B M Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA
Received 15 July 1983; accepted for publication 6 September 1983 We report magnetotransport measurements, down to 0.55 K and up to 28 T, on GaSb-InAs-GaSb heterostructures. At moderate and high fields, the magnetoresistance vanishes and the Hall resistance shows plateaus at values of h l i e 2 when i (i = 1, 2, 3.... ) magnetic levels are fully occupied. In addition, in high mobility samples, new features appear, the most prominent being a plateau at i = 5/2. The characteristics of these features are different from those observed in GaAs-GaAIAs at fractional occupation numbers, suggesting that they are likely related to the presence of holes in this system.