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901. Calculation of the coefficients of diffusion of atoms and ions of mercury, cadmium and zinc in argon
Classified Classified abstracts
abstracts
901-911
9014100
on this page
Editor’s note The label immediately following the title of each item denotes country or origin of publication, that at the end of each abstract indicates country of origin of work (where known).
I. General 14. KINETIC
vacuum THEORY
science
16
and engineering
906. Electronic
OF GASES 14 of diffusion of atoms and ions of
901. Calculation of the coefficients mercury, cadmium and zinc in argon. (USSR)
The coefficients of mutual diffusion of atoms and ions of mercury, cadmium and zinc in partially ionized isothermal argon plasma at low pressure in the range 0.1 to 9 torr are calculated, Mobilities of corresponding ions are also determined. G E Zolotukhin and V S Gonyaev, Zh Tekh Fiz, 43 (8), 1973, 17311734 (in Russian). 16. GASES AND SOLIDS 16 902. The influence of electron-beam
treatment on penetration additives of film contacts into silicon substrate. (USSR)
of
The influence of electron-beam irradiation and thermal treatment of film contacts on penetration of additives of contact material into silicon is investigated. G V Dudko and V I Tarakanov, Microelectronics, CON, No 1, 1973, 191-193 (in Russian). 16 903. Diffusion of impurities imulanted into silicon bv ion bombardment. (USSR) _ Diffusion from the layer is investigated, which has been prepared by bombardment of silicon by B and P ions with energy 50 keV at various doses. Anomalously high B and P diffusion ii-observed in the temperature interval 600 to 900°C. P V Pavlov et al, Microelectronics, Coil, No 1, Taganrog 1973, 141-148 (in Russian). 16 904. Variations in life time of charge carriers in high-resistivity silicon at bombardment by boron and phosphorus ions. (USSR) Using the method of modulation of stationary photoconductivity for the measurement of effective life time of charge carriers, the depth in silicon is determined, in which the influence of bombardment by 50 keV boron and 100 keV phosphorus ions is observed. N N Abramova et al, Micioelecfronics, Coil, No 1, Taganrog 1973, 149-155 (in Russian).
16 905. Barium adsorption on single crystal films of copper, silver and iron. (USSR) Epitaxial single crystal films of copper and silver with (111) orientation and of iron with (011) orientation have been deposited on (011) tungsten face by evaporation in vacuum. Using the method of measurement of contact potential difference, variations in work function have been investigated during barium deposition on surface of the films. The results are compared with the analogous results for the systems Ba-W(Ol1) and Ba-Mo(Ol1). It is found that at barium coverage on substrates with different chemical nature but equal work function value, the lower work function in the minimum of the coverage dependence is obtained for transition metals. The character of concentration dependences of work function is compared with the variations in structure of adsorbed layers. Yu S Veluda and A G Naumovgts, Ukr Fiz Zh, 18 (6), 1973, 1000-I 006 (in Russian).
and
spectra of absorption and radiation of napbtalene and molecules adsorped by zeolites and some amorphous
naphtylamine adsorbents. (USSR)
Electronic spectra of absorption and radiation of naphtalene and naphtylamine molecules adsorbed by zerolites and some amorphous adsorbents are investigated. Electronic spectra of adsorbed molecules are measured using the method of diffusive reflection. A M Eremenko et al, Optika Spektroskop, 35 (2), 1973, 224-228 (in Russian). 16
(USSR) The influence of adsorption of atomic nitrogen on electrical conductivity of ZnO films on mica and sapphire substrates is investigated. The ZnO films have been prepared by the method of reactions in gas phase. V A Sokolov et al, Izv VUZ Fir, No 8, 1973, 134-I 36 (in Russian).
907. Electrical
conductivity
of zinc oxide in atomic nitrogen.
16 908. To the problem of difference in composition of charged and neutral particles sputtered by argon ion beam from gallium arsenide. (USSR)
The results of investigation of photon spectrum in the visible region emitted at bombardment of (100) and (111) faces of single crystal gallium arsenide by argon ions with energy 24 keV are presented. Only emission lines of gallium excited atoms with velocities of the order of 2 to 3 keV are found. The level of gallium excited atoms is placed in resonance with the free conductivity band of GaAs and slow excited Ga atoms are ionized by resonance ionization and they leave GaAs surface predominantly as ions. The influence of resonance ionization of excited sputtered atoms on the charge state of emitted particles is shown. These processes explain the difference in composition of charged and neutral particles sputtered from gallium arsenide. A G Koval et al, Zh Tekh Fiz, 43 (8), 1973, 1753-1754 (in Russian). 16 909. A new method for the determination of the penetration depth of electrons in insulators. (Germany)
A new method for the determination of the penetration depth of electrons in insulators is presented. The method is based on thermally stimulated electron emission technique which allows to get information on the spatial and energy trap distribution. The penetration depths of electrons in Si02 are given. M Schmidt and H Glaefeke, Phys Stat Sol (a), 18 (2), 1973, K121K124. 910. Mossbauer
spectroscopy
16 of “Fe implanted into metals. (Germany)
Mossbauer absorbers were prepared by implantation of 35 keV 57Fe ions into a number of metallic targets, Mossbauer spectra of 57Fe implanted into metals are measured. (Poland) B Sawicka et al, Phys Stat Sol (a), 18 (2), 1973, K85-K89. 16 911. Xenon ion ranges in polycrystalline gold. (Germany) Radioactive ls3Xe+ ion ranges in polycrystalline gold areinvestigated. After bombardment the thin layers of target material were successively removed by means of the chemical stripping technique using a solution of bromine and the remaining activities in the target were measured. (Yugoslavia) T Jokic, Phys Stat Sol (a), 18 (2), 1973, K77-K80. 317
abstracts
901-911
9014100
on this page
Editor’s note The label immediately following the title of each item denotes country or origin of publication, that at the end of each abstract indicates country of origin of work (where known).
I. General 14. KINETIC
vacuum THEORY
science
16
and engineering
906. Electronic
OF GASES 14 of diffusion of atoms and ions of
901. Calculation of the coefficients mercury, cadmium and zinc in argon. (USSR)
The coefficients of mutual diffusion of atoms and ions of mercury, cadmium and zinc in partially ionized isothermal argon plasma at low pressure in the range 0.1 to 9 torr are calculated, Mobilities of corresponding ions are also determined. G E Zolotukhin and V S Gonyaev, Zh Tekh Fiz, 43 (8), 1973, 17311734 (in Russian). 16. GASES AND SOLIDS 16 902. The influence of electron-beam
treatment on penetration additives of film contacts into silicon substrate. (USSR)
of
The influence of electron-beam irradiation and thermal treatment of film contacts on penetration of additives of contact material into silicon is investigated. G V Dudko and V I Tarakanov, Microelectronics, CON, No 1, 1973, 191-193 (in Russian). 16 903. Diffusion of impurities imulanted into silicon bv ion bombardment. (USSR) _ Diffusion from the layer is investigated, which has been prepared by bombardment of silicon by B and P ions with energy 50 keV at various doses. Anomalously high B and P diffusion ii-observed in the temperature interval 600 to 900°C. P V Pavlov et al, Microelectronics, Coil, No 1, Taganrog 1973, 141-148 (in Russian). 16 904. Variations in life time of charge carriers in high-resistivity silicon at bombardment by boron and phosphorus ions. (USSR) Using the method of modulation of stationary photoconductivity for the measurement of effective life time of charge carriers, the depth in silicon is determined, in which the influence of bombardment by 50 keV boron and 100 keV phosphorus ions is observed. N N Abramova et al, Micioelecfronics, Coil, No 1, Taganrog 1973, 149-155 (in Russian).
16 905. Barium adsorption on single crystal films of copper, silver and iron. (USSR) Epitaxial single crystal films of copper and silver with (111) orientation and of iron with (011) orientation have been deposited on (011) tungsten face by evaporation in vacuum. Using the method of measurement of contact potential difference, variations in work function have been investigated during barium deposition on surface of the films. The results are compared with the analogous results for the systems Ba-W(Ol1) and Ba-Mo(Ol1). It is found that at barium coverage on substrates with different chemical nature but equal work function value, the lower work function in the minimum of the coverage dependence is obtained for transition metals. The character of concentration dependences of work function is compared with the variations in structure of adsorbed layers. Yu S Veluda and A G Naumovgts, Ukr Fiz Zh, 18 (6), 1973, 1000-I 006 (in Russian).
and
spectra of absorption and radiation of napbtalene and molecules adsorped by zeolites and some amorphous
naphtylamine adsorbents. (USSR)
Electronic spectra of absorption and radiation of naphtalene and naphtylamine molecules adsorbed by zerolites and some amorphous adsorbents are investigated. Electronic spectra of adsorbed molecules are measured using the method of diffusive reflection. A M Eremenko et al, Optika Spektroskop, 35 (2), 1973, 224-228 (in Russian). 16
(USSR) The influence of adsorption of atomic nitrogen on electrical conductivity of ZnO films on mica and sapphire substrates is investigated. The ZnO films have been prepared by the method of reactions in gas phase. V A Sokolov et al, Izv VUZ Fir, No 8, 1973, 134-I 36 (in Russian).
907. Electrical
conductivity
of zinc oxide in atomic nitrogen.
16 908. To the problem of difference in composition of charged and neutral particles sputtered by argon ion beam from gallium arsenide. (USSR)
The results of investigation of photon spectrum in the visible region emitted at bombardment of (100) and (111) faces of single crystal gallium arsenide by argon ions with energy 24 keV are presented. Only emission lines of gallium excited atoms with velocities of the order of 2 to 3 keV are found. The level of gallium excited atoms is placed in resonance with the free conductivity band of GaAs and slow excited Ga atoms are ionized by resonance ionization and they leave GaAs surface predominantly as ions. The influence of resonance ionization of excited sputtered atoms on the charge state of emitted particles is shown. These processes explain the difference in composition of charged and neutral particles sputtered from gallium arsenide. A G Koval et al, Zh Tekh Fiz, 43 (8), 1973, 1753-1754 (in Russian). 16 909. A new method for the determination of the penetration depth of electrons in insulators. (Germany)
A new method for the determination of the penetration depth of electrons in insulators is presented. The method is based on thermally stimulated electron emission technique which allows to get information on the spatial and energy trap distribution. The penetration depths of electrons in Si02 are given. M Schmidt and H Glaefeke, Phys Stat Sol (a), 18 (2), 1973, K121K124. 910. Mossbauer
spectroscopy
16 of “Fe implanted into metals. (Germany)
Mossbauer absorbers were prepared by implantation of 35 keV 57Fe ions into a number of metallic targets, Mossbauer spectra of 57Fe implanted into metals are measured. (Poland) B Sawicka et al, Phys Stat Sol (a), 18 (2), 1973, K85-K89. 16 911. Xenon ion ranges in polycrystalline gold. (Germany) Radioactive ls3Xe+ ion ranges in polycrystalline gold areinvestigated. After bombardment the thin layers of target material were successively removed by means of the chemical stripping technique using a solution of bromine and the remaining activities in the target were measured. (Yugoslavia) T Jokic, Phys Stat Sol (a), 18 (2), 1973, K77-K80. 317