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958. A summary of thin film deposition techniques
Classified abstracts 946-960 electron microscopic examination of the film structure. Films having various thicknesses ranging from 30-1000/~ were investigated. K Kinosita et al, Jap J Appl Phys, 6, 1967, 42-53, 30 946. Evaporation of Mn, Cn and tin from molten iron under vacuum. (Japan) In order to study the evaporation of Mn, Cu and Sn from molten iron, Fe-Mn, Fe-C-Mn, Fe-Cu and Fe-Sn alloys were melted at 1600°C under vacuum for 5-20 rain using a high frequency induction furnace. M Homma et al, Japan lnst Metals J, 30, 1966, 515 520 (in Japanese). 30 947. Electron diffraction investigation of vacuum deposited manganese films. (Japan) Structures of manganese films prepared by vacuum deposition were investigated as a function of substrate temperature by electron diffraction methods. K Yoshida and S Nagata, Mere Fac Eng Koke University (Japan), 1966, 12, 105 110. 30 948. Vacuum depositing thin films of iron in a sealed system at very low pressures. (Czechoslovakia) A vacuum deposition apparatus was constructed for studying the magnetic properties of high quality thin ferromagnetic films during the deposition process. Reproducible pressures of 10 8 torr were achieved with the apparatus which consisted of a two-stage rotary oil pump, a diffusion oil pump, Cu foil traps at liquid nitrogen temperature. Fe is used as a getter element because of its good sorption properties in ultrahigh vacuum. V Kambersky and L Laska, Czech J Phys, 15, 1966, 434-435 (in Czech). 30 949. Determination of thickness of nickel thin films by means of an electron microscope. (Czechoslovakia) The thickness of vacuum evaporated nickel films was measured by an electron microscope with shadowing. The results obtained were confirmed by optical methods. Using the Tesla BS 242 electron microscope, an accuracy of better than 9 per cent was obtained. This method also provides outlines of the film surface. G Gosmanova, Czech J Phys, A17 (1), 1967, 108-110 (in Czech). 30 950. System for the automatic control of complex vacuum evaporation techniques. (Hungary) A system is described which automatically controls several of the operations involved in the evaporation and deposition of thin films in vacuum. The application of this technique enables the rate of deposition of the thin film to be programmed, the operating temperature to be controlled, and the thickness of the film having the desired degree of resistivity to be maintained. This system was applied to the manufacture of Ni-Cr thin film resistors. K Lajos et al, Finommechanika, 5, 1966, 135-139 (in Hungarian). 30 951. Properties of mercury tellur~de thin films. (Foland) Thin films of HgTe were prepared by thermal evaporation at 5 ~ l0 5 tort, with a film growth rate of 10-20 A/see, and electrical properties of the films determined. As the stoichiometric composition was not obtained, the films were heated in mercury vapour and in argon atmosphere to stabilize the electrical properties. S Ignatowicz and A Kobus, Bull Acad Polon Sci Set Sci Tech, 14 (9), 1966, 927 932 (in English). 30 952. The effect of uniaxial elastic stresses on the remagnetization of thin permalloy layers. (Holland) Permalloy layers with thicknesses of 150-3000 A, were deposited on glass plates from the vapour phase in vacuo from an alloy containing 25 per cent Fe and 75 per cent Ni. A magnetic field of 50 oersted was maintained during the deposition. V A Buravikhin, Phys Status Solidi, 16, 1966, 651-656. 30 953. Oriented growth of semiconductors, l i t . Growth of gallium arsenide on germanium. (USA) Gallium arsenide has been grown on Ge using arsenic trichloride and Ga. With optimum growth conditions the epitaxial layers have properties close to those of good quality bulk crystals. L C Bobb et al, J Appl Phys, 37, 1966, 4687~693.
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3O 954. Oriented growth of semiconductors. IV. Vacuum deposition of epitaxial indium antimonide. (USA) Using flash vaporization, indium antimonide has been grown epitaxially on indium antimonide substrates. The perfection of the epitaxial layers depends critically upon the method used for preparation of the substrate surface. Best results were obtained after the substrates had been ion-bombarded and annealed. H Holloway et al, J Appl Phys, 37, 1966, 4694-4699. 3O 955. Yield and angular distribution of caesium-sputtered molybdenum. (USA) A radioactive tracer technique has been adapted to the measurement of the yield (atom/ion) and angular distribution (atom/ion/sr) of Mo (100) crystallographic faces. The energy of the ions was varied from 1 to 7.5 keV and the target temperature was varied from 77 to 47YK. A schematic diagram of the ion source and target apparatus is given. The importance of ion channelling and the effects of thermal annealing on ion-induced damage are emphasized. J B Green et al, J Appl Phys, 37, 1966, 4699-4702. 3O 956. Growth of thin gold films on rocksalt from 80 to 475°K. (USA) The thin gold films are evaporated in an ultrahigh vacuum system on to clean and air-contaminated rocksalt crystals at liquid N~ temperature. The structure and orientation of the deposits arc investigated with an electron microscope. Changes in structure and orientation of the gold films with varying substrate temperature arc investigated over a wide temperature range. The results are discussed with respect to the work in the epitaxial temperature region. E F Wasserman and R L Hines, J Appl Phys, 38, 1967, 197-201. 30 957. Metastable evaporated thin films of Cu-Ag and Co-Au alloys. Parts 1 and 2. (USA) Metastable solid solutions of the Cu-Ag and Co-Au systems have been prepared by vapour quenching ie simultaneous vacuum evaporation of the two components onto a substrate held at liquid N2 temperature. The films so obtained are studied by resistivity measurements and by transmission electron microscopy and diffraction. S Mader et al, Acta Metallurgica, 15, 1967, 203 223. 30 958. A summary of thin film deposition techniques. (USA) Some practical methods of thin film deposition and their respective advantages and disadvantages are considered. It is pointed out that selection of a particular method for thin film deposition should be governed by the characteristics desired in the film. The vacuum evaporation and sputtering techniques are outlined. The application of electron beam heating to the vacuum evaporation technique is also discussed. D Anderson, Semiconductor Products Solid State Techn, 9, 1966, 27-29. 30 959. Theory and practice of RF sputtering. (USA) The basic principles of rf sputtering of insulator and their properties are reviewed and an rf sputtering system is described. The effect of various process parameters on deposition rate and film properties is also given. RF sputtering of metals can be achieved by capacity coupling the power supply to the metal electrode. With this technique, it is possible to deposit insulator films through rf reactive sputtering at rates significantly higher than those obtained through dc methods. P D Davidse, Semiconductor Products Solid State Technology, 9, 1966, 30-35, 30 960. High vacuum systems for thin film applications. (USA) The importance of low pressure environment on thin film deposition is discussed. Pressure measurement is shown to be both critical and complex. The location of the gauge in the system and of the connecting tubulation are important considerations. Contamination of thin film deposition systems are grouped into six categories. Three are characteristic of the vacuum system while the other three are associated with the material being processed. Diffusion pump backstreaming is shown to contribute only 1/100 of a monolayer per hour in a well baffled system. M H Hablanian and H A Steinherz, Semiconductor Products Solid State Technol. 9, 1966, 37-43.
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3O 954. Oriented growth of semiconductors. IV. Vacuum deposition of epitaxial indium antimonide. (USA) Using flash vaporization, indium antimonide has been grown epitaxially on indium antimonide substrates. The perfection of the epitaxial layers depends critically upon the method used for preparation of the substrate surface. Best results were obtained after the substrates had been ion-bombarded and annealed. H Holloway et al, J Appl Phys, 37, 1966, 4694-4699. 3O 955. Yield and angular distribution of caesium-sputtered molybdenum. (USA) A radioactive tracer technique has been adapted to the measurement of the yield (atom/ion) and angular distribution (atom/ion/sr) of Mo (100) crystallographic faces. The energy of the ions was varied from 1 to 7.5 keV and the target temperature was varied from 77 to 47YK. A schematic diagram of the ion source and target apparatus is given. The importance of ion channelling and the effects of thermal annealing on ion-induced damage are emphasized. J B Green et al, J Appl Phys, 37, 1966, 4699-4702. 3O 956. Growth of thin gold films on rocksalt from 80 to 475°K. (USA) The thin gold films are evaporated in an ultrahigh vacuum system on to clean and air-contaminated rocksalt crystals at liquid N~ temperature. The structure and orientation of the deposits arc investigated with an electron microscope. Changes in structure and orientation of the gold films with varying substrate temperature arc investigated over a wide temperature range. The results are discussed with respect to the work in the epitaxial temperature region. E F Wasserman and R L Hines, J Appl Phys, 38, 1967, 197-201. 30 957. Metastable evaporated thin films of Cu-Ag and Co-Au alloys. Parts 1 and 2. (USA) Metastable solid solutions of the Cu-Ag and Co-Au systems have been prepared by vapour quenching ie simultaneous vacuum evaporation of the two components onto a substrate held at liquid N2 temperature. The films so obtained are studied by resistivity measurements and by transmission electron microscopy and diffraction. S Mader et al, Acta Metallurgica, 15, 1967, 203 223. 30 958. A summary of thin film deposition techniques. (USA) Some practical methods of thin film deposition and their respective advantages and disadvantages are considered. It is pointed out that selection of a particular method for thin film deposition should be governed by the characteristics desired in the film. The vacuum evaporation and sputtering techniques are outlined. The application of electron beam heating to the vacuum evaporation technique is also discussed. D Anderson, Semiconductor Products Solid State Techn, 9, 1966, 27-29. 30 959. Theory and practice of RF sputtering. (USA) The basic principles of rf sputtering of insulator and their properties are reviewed and an rf sputtering system is described. The effect of various process parameters on deposition rate and film properties is also given. RF sputtering of metals can be achieved by capacity coupling the power supply to the metal electrode. With this technique, it is possible to deposit insulator films through rf reactive sputtering at rates significantly higher than those obtained through dc methods. P D Davidse, Semiconductor Products Solid State Technology, 9, 1966, 30-35, 30 960. High vacuum systems for thin film applications. (USA) The importance of low pressure environment on thin film deposition is discussed. Pressure measurement is shown to be both critical and complex. The location of the gauge in the system and of the connecting tubulation are important considerations. Contamination of thin film deposition systems are grouped into six categories. Three are characteristic of the vacuum system while the other three are associated with the material being processed. Diffusion pump backstreaming is shown to contribute only 1/100 of a monolayer per hour in a well baffled system. M H Hablanian and H A Steinherz, Semiconductor Products Solid State Technol. 9, 1966, 37-43.