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Author Index Volume 59
Microelectronic Engineering 59 (2001) 515–525 www.elsevier.com / locate / mee
Author Index Volume 59 Adriaenssens, G.J., see Afanas’ev, V.V. Adriaenssens, G.J., see Afanas’ev, V.V. Afanas’ev, V.V., G.J. Adriaenssens and A. Stesmans, Positive charging of thermal SiO 2 layers: hole trapping versus proton trapping Afanas’ev, V.V., M. Houssa, A. Stesmans, G.J. Adriaenssens and M.M. Heyns, Energy barriers between (100)Si and Al 2 O 3 and ZrO 2 -based dielectric stacks: internal electron photoemission measurements Afanas’ev, V.V., see Houssa, M. Alam, M., B. Weir, J. Bude, P. Silverman and A. Ghetti, A computational model for oxide breakdown: theory and experiments Alam, M.A., see Weir, B.E. Al-Shareef, H.N., G. Bersuker, C. Lim, R. Murto, S. Borthakur, G.A. Brown and H.R. Huff, Plasma nitridation of very thin gate dielectrics Aravamudhan, S., see Manchanda, L. Armstrong, B.M., see Hall, S. Ashburn, P., see Hall, S. Asli, N., see Vexler, M.I. Aymerich, X., see Porti, M. Bain, M., see Hall, S. Balk, P., see Rivera, A. Bandiera, L., A. Cester, A. Paccagnella, G. Ghidini and I. Bloom, Detrended fluctuation analysis of the soft breakdown current Bauza, D., see Rahmoune, F. ´ Bechu, N., see Borsoni, G. Beech, C.D., see Zhang, J.F. Bersani, M., see Polignano, M.L. Bersuker, G., see Al-Shareef, H.N. Bertin, F., see Borsoni, G. Bitzer, T., see Dittrich, Th. Bloom, I., see Bandiera, L. Bloom, I., P. Pavan and B. Eitan, NROM TM — a new non-volatile memory technology: from device to products Bongiorno, A. and A. Pasquarello, Oxygen species in SiO 2 : a first-principles investigation Elsevier Science B.V. PII: S0167-9317( 01 )00696-7
85– 88 335– 339 85–
88
335– 339 367– 371 137– 147 17– 23 317– 351– 449– 449– 161– 265–
322 359 454 454 166 269
449– 454 497– 501 49– 115– 311– 67– 379– 317– 311– 399– 49–
53 118 315 72 384 322 315 404 53
213– 223 167– 172
516
Author Index Volume 59
` N. Bechu, ´ Borsoni, G., V. Le Roux, R. Laffitte, S. Kerdiles, L. Vallier, M.L. Korwin-Pawlowski, C. Vannuffel, F. Bertin, C. Vergnaud, A. Chabli and C. Wyon, Dependence of ultra-thin SiO 2 layers formation by ultra-slow single and multicharged ions on process conditions Borthakur, S., see Al-Shareef, H.N. Bravaix, A., D. Goguenheim, N. Revil and E. Vincent, Hot-carrier reliability study of second and first impact ionization degradation in 0.15-mm channel-length NMOSFETS Breitenstein, O., see Huth, S. Brown, G.A., see Al-Shareef, H.N. Brubaker, M., see Lee, D.-O. Buchanan, D.A., see Gusev, E.P. Bude, J., see Alam, M. Bude, J.D., see Esseni, D. Burton, D., see Zhang, W.D. Burton, D., see Zhang, W.D. Busch, B., see Manchanda, L. Campardo, G. and R. Micheloni, Architecture of non volatile memory with multi-bit cells Campbell, S.A., T.Z. Ma, R. Smith, W.L. Gladfelter and F. Chen, High mobility HfO 2 n- and p-channel transistors ´ Carceller, J.E., see Gamiz, F. Carpanese, C., see Polignano, M.L. Cartier, E., see Ludeke, R. Cartier, E., see Gusev, E.P. Celler, G.K., see Mastrapasqua, M. Cester, A., see Bandiera, L. Chabli, A., see Borsoni, G. Chen, F., see Campbell, S.A. Chen, H.P., see Kuo, D.-S. Chen, T.F., see Yeh, W.K. Chen, Y.T., see Kuo, D.-S. Chih, Y.D., see Kuo, D.-S. Chimenton, A., P. Pellati and P. Olivo, Threshold voltage spread in flash memories under a constant DQ erasing scheme Chu, S., see Kuo, D.-S. Chu, W.T., see Kuo, D.-S. Chung, G.Y., see Stahlbush, R.E. Ciofi, C., see Crupi, F. Clerc, R., see Lime, F. Clerc, R., see Leroux, C. Conley Jr., J.F., see Vandooren, A. Copel, M., see Gusev, E.P.
311– 315 317– 322
101– 109– 317– 405– 341– 137– 55– 89– 95– 351–
108 113 322 408 349 147 60 94 99 359
173– 181 361– 423– 379– 259– 341– 409– 49– 311– 361– 203– 475– 203– 203–
365 427 384 263 349 416 53 315 365 211 482 211 211
197– 203– 203– 393– 43– 119– 277– 489– 341–
201 211 211 398 47 125 283 495 349
Author Index Volume 59
517
Cristoloveanu, S., see Pretet, J. Cristoloveanu, S., see Okhonin, S. Cristoloveanu, S., see Pretet, J. Cristoloveanu, S., see Vandooren, A. Crivelli, B., see Polignano, M.L. Crupi, F., C. Ciofi, G. Iannaccone, B. Neri and S. Lombardo, Current noise at the oxide hard-breakdown
443– 469– 483– 489– 379–
448 473 488 495 384
43–
47
Dantz, D., see Huth, S. Degraeve, R., see Zhang, J.F. Degraeve, R., see Zhang, W.D. Degraeve, R., see Zhang, W.D. Degraeve, R., see Kaczer, B. De Keersgieter, A., see Kaczer, B. de la Houssaye, P.R., see Lagnado, I. D’Emic, C., see Gusev, E.P. de Nijs, J.M.M., see Rivera, A. Di Lucrezia, R., see Lloyd, G. Diener, J., D. Kovalev and F. Koch, Resonant excitation of interfacial Si–O: possibility of nonthermal processing Dijkstra, J., see Scarpa, A. Dittrich, Th., T. Bitzer, T. Rada, N.V. Richardson, V.Yu. Timoshenko, J. Rappich and F. Koch, Defect transformation under growth of submonolayer oxides on silicon surfaces at low temperatures Dobrovolsky, V.N., L.V. Ishchuk and G.K. Ninidze, Reversed electron-hole pair transport in SOI structure Draper, B.L., see Schwank, J.R.
109– 67– 89– 95– 155– 155– 455– 341– 497– 323–
113 72 94 99 160 160 459 349 501 328
Ebersberger, B., see Porti, M. Eccleston, B., see Lloyd, G. Eccleston, W., Carrier generation and current flow at the interface between polysilicon and an SiO 2 gate dielectric Edelstein, M.D., see Vogel, E.M. Eitan, B., see Bloom, I. El Mubarek, H.A.W., see Hall, S. Ellis, J.N., see Zhang, J.F. Esseni, D., J.D. Bude and L. Selmi, Experimental study of low voltage anode hole injection in thin oxides Esseni, D. and L. Selmi, BipFLASH: A novel non-volatile memory cell concept for high-speed, low-power applications Esseni, D., see Mastrapasqua, M.
265– 269 323– 328
Faynot, O., see Okhonin, S. Fazan, P., see Okhonin, S. Feldman, L.C., see Stahlbush, R.E.
469– 473 469– 473 393– 398
291– 294 183– 188
399– 404 509– 513 253– 258
295– 300 73– 83 213– 223 449– 454 67– 72 55–
60
231– 236 409– 416
518
Author Index Volume 59
Fiegna, C., see Mastrapasqua, M. Fleetwood, D.M., see Schwank, J.R. Fong, T.J., see Kuo, D.-S.
409– 416 253– 258 203– 211
Gamble, H., see Hall, S. ´ ´ ´ ´ Gamiz, F., J.B. Roldan, J.A. Lopez-Villanueva, F. Jimenez-Molinos and J.E. Carceller, Electron transport in ultrathin double-gate SOI devices Gebel, T., J. Von Borany, H.-J. Thees, M. Wittmaack, K.-H. Stegemann and W. Skorupa, Non-volatile memories based on Si 1 -implanted gate oxides Ghetti, A., Characterization and modeling of the tunneling current in Si–SiO 2 –Si structures with ultra-thin oxide layer Ghetti, A., see Alam, M. Ghibaudo, G., see Lime, F. Ghibaudo, G., see Leroux, C. Ghidini, G., see Bandiera, L. Giussani, A., see Polignano, M.L. Gladfelter, W.L., see Campbell, S.A. Goguenheim, D., see Bravaix, A. Gouker, P., see Mrstik, B.J. Grant, R., see Lee, D.-O. Green, M.L., see Manchanda, L. Gribelyuk, M., see Gusev, E.P. Groeseneken, G., see Zhang, J.F. Groeseneken, G., see Zhang, W.D. Groeseneken, G., see Zhang, W.D. Groeseneken, G., see Kaczer, B. ´ Guegan, G., see Lime, F. Gusev, E.P., E. Cartier, D.A. Buchanan, M. Gribelyuk, M. Copel, H. Okorn-Schmidt and C. D’Emic, Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues
449– 454
Hall, S., A.C. Lamb, M. Bain, B.M. Armstrong, H. Gamble, H.A.W. El Mubarek and P. Ashburn, SiGe HBTs on bonded wafer substrates Harmon, D., see Wu, E. Hefyene, N., see Pretet, J. Heyns, M.M., see Afanas’ev, V.V. Heyns, M.M., see Houssa, M. Higgins, S., see Lloyd, G. Hirose, M., see Miyazaki, S. Hong, J.G., see Johnson, R.S. Horiguchi, S., see Ono, Y. Horn, M., see Lee, D.-O. Houssa, M., see Afanas’ev, V.V.
423– 427 247– 252 127– 137– 119– 277– 49– 379– 361– 101– 285– 405– 351– 341– 67– 89– 95– 155– 119–
136 147 125 283 53 384 365 108 289 408 359 349 72 94 99 160 125
341– 349
449– 25– 443– 335– 367– 323– 373– 385– 435– 405– 335–
454 31 448 339 371 328 378 391 442 408 339
Author Index Volume 59
Houssa, M., V.V. Afanas’ev, A. Stesmans and M.M. Heyns, Defect generation in ultra-thin SiO 2 gate layers and SiO 2 / ZrO 2 gate stacks and the dispersive transport model Hsieh, C.H., see Kuo, D.-S. Hsieh, C.T., see Kuo, D.-S. Hsu, C.Y., see Kuo, D.-S. Hsu, S., see Yeh, W.K. Huang, C., see Yeh, W.K. Huang, Y.C., see Kuo, D.-S. Huber, A., see Huth, S. Huff, H.R., see Al-Shareef, H.N. Hughes, H.L., see Mrstik, B.J. Huth, S., O. Breitenstein, A. Huber, D. Dantz and U. Lambert, Localization and detailed investigation of gate oxide integrity defects in silicon MOS structures Iannaccone, G., see Crupi, F. Ielmini, D., A.S. Spinelli, A.L. Lacaita and A. Modelli, A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories Ioannou, D., see Pretet, J. Ishchuk, L.V., see Dobrovolsky, V.N. ´ ´ Jimenez-Molinos, F., see Gamiz, F. Johnson, R.S., G. Lucovsky and J. Goo Hong, Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al 2 O 3 –Ta 2 O 5 alloys Kaczer, B., R. Degraeve, A. De Keersgieter, M. Rasras and G. Groeseneken, Explanation of nMOSFET substrate current after hard gate oxide breakdown Kageshima, H., M. Uematsu and K. Shiraishi, Theory of thermal Si oxide growth rate taking into account interfacial Si emission effects Kawakami, Y., see Pretet, J. ` S., see Borsoni, G. Kerdiles, Klemens, F., see Manchanda, L. Koch, F., see Diener, J. Koch, F., see Dittrich, Th. Kolawa, E., see Vandooren, A. Komiya, K. and Y. Omura, Spectroscopic analysis of stress-induced defects in thin silicon oxide films Korwin-Pawlowski, M.L., see Borsoni, G. Kovalev, D., see Diener, J. Kumar, A., R. Lal and V.R. Rao, A simple and direct technique for interface characterization of SOI MOSFETs and its application in hot carrier degradation studies in sub-100 nm JVD MNSFETs Kuo, D.-S., C. Wang, S. Chu, M.S. Liang, C.S. Tsai, H.J. Tao, Y.C. Huang, J.P. Wu, Y.T. Chen, Y.D. Chih, C.H. Hsieh, H.C. Sung, J.K. Yeh, C.J. Lin, S.C. Wong, S.H. Lin, C.T. Hsieh, W.T. Chu, H.P. Chen, C.Y. Hsu, D.S. Shyu, S.P. Peng, T.J. Fong and K.Y. Lee, A flash-based SOC technology using a split-gate cell
519
367– 203– 203– 203– 475– 475– 203– 109– 317– 285–
371 211 211 211 482 482 211 113 322 289
109– 113 43–
47
189– 195 483– 488 509– 513 423– 427 385– 391 155– 160 301– 443– 311– 351– 291– 399– 489–
309 448 315 359 294 404 495
61– 65 311– 315 291– 294
429– 433
203– 211
520
Author Index Volume 59
Kuper, F.G., see Scarpa, A.
183– 188
Lacaita, A.L., see Ielmini, D. Laffitte, R., see Borsoni, G. Lagnado, I. and P.R. De la Houssaye, Integration of Si and SiGe with Al 2 O 3 (sapphire) Lai, W., see Wu, E. Lal, R., see Kumar, A. Lalor, M., see Zhang, W.D. Lalor, M., see Zhang, W.D. Lamb, A.C., see Hall, S. Lambert, U., see Huth, S. Le Roux, V., see Borsoni, G. Lee, D.-O., P. Roman, C.-T. Wu, W. Mahoney, M. Horn, P. Mumbauer, M. Brubaker, R. Grant and J. Ruzyllo, Studies of mist deposited high-k dielectrics for MOS gates Lee, K.Y., see Kuo, D.-S. Leroux, C., G. Ghibaudo, G. Reimbold, R. Clerc and S. Mathieu, Extraction of oxide thickness in the nanometer range using C(V ) characteristics Liang, M.S., see Kuo, D.-S. Lim, C., see Al-Shareef, H.N. ´ Lime, F., R. Clerc, G. Ghibaudo, G. Pananakakis and G. Guegan, Impact of gate tunneling leakage on the operation of NMOS transistors with ultra-thin gate oxides Lin, C.J., see Kuo, D.-S. Lin, S.H., see Kuo, D.-S. Liou, F.T., see Yeh, W.K. Liu, J., see Yeh, W.K. Lloyd, G., M. Raja, I. Sellers, N. Sedghi, R. Di Lucrezia, S. Higgins and B. Eccleston, The properties of MOS structures using conjugated polymers as the semiconductor Lombardo, S., Intrinsic dielectric breakdown of ultra-thin gate oxides Lombardo, S., see Crupi, F. ´ ´ Lopez-Villanueva, J.A., see Gamiz, F. Lucovsky, G., J.L. Whitten and Yu. Zhang, A molecular orbital model for the electronic structure of transition metal atoms in silicate and aluminate alloys Lucovsky, G., see Johnson, R.S. Ludeke, R. and E. Cartier, Imaging of oxide and interface charges in SiO 2 –Si
189– 195 311– 315
Ma, T.Z., see Campbell, S.A. Macfarlane, P.J., see Stahlbush, R.E. Macfarlane, P.J. and R.E. Stahlbush, Trapping dependent H 1 motion in SIMOX buried oxides Mahoney, W., see Lee, D.-O. Majkusiak, B., see Walczak, J.
455– 25– 429– 89– 95– 449– 109– 311–
459 31 433 94 99 454 113 315
405– 408 203– 211 277– 283 203– 211 317– 322 119– 203– 203– 475– 475–
125 211 211 482 482
323– 328 33– 42 43– 47 423– 427 329– 334 385– 391 259– 263 361– 365 393– 398 503– 508 405– 408 417– 421
Author Index Volume 59
Manchanda, L., M.D. Morris, M.L. Green, R.B. Van Dover, F. Klemens, T.W. Sorsch, P.J. Silverman, G. Wilk, B. Busch and S. Aravamudhan, Multi-component high-K gate dielectrics for the silicon industry Mastrapasqua, M., D. Esseni, G.K. Celler, C. Fiegna, L. Selmi and E. Sangiorgi, Measurements of low field mobility in ultra-thin SOI n- and p-MOSFETs Maszara, W., see Pretet, J. Mathieu, S., see Leroux, C. Matsui, M., see Pretet, J. McDonald, K., see Stahlbush, R.E. McKenna, J., see Wu, E. McMarr, P.J., see Mrstik, B.J. Meinerzhagen, B., see Vexler, M.I. Meisenheimer, T.L., see Schwank, J.R. Micheloni, R., see Campardo, G. Miyazaki, S., M. Narasaki, M. Ogasawara and M. Hirose, Characterization of ultrathin zirconium oxide films on silicon using photoelectron spectroscopy Modelli, A., see Ielmini, D. Mojarradi, M., see Vandooren, A. Moriyasu, Y., see Pretet, J. Morris, M.D., see Manchanda, L. Mrstik, B.J., H.L. Hughes, P.J. McMarr and P. Gouker, Electron and hole trapping in thermal oxides that have been ion implanted Mumbauer, P., see Lee, D.-O. Murto, R., see Al-Shareef, H.N.
521
351– 359 409– 483– 277– 443– 393– 25– 285– 161– 253– 173–
416 488 283 448 398 31 289 166 258 181
373– 189– 489– 443– 351–
378 195 495 448 359
285– 289 405– 408 317– 322
´ M., see Porti, M. Nafrıa, Nagase, M., see Ono, Y. Nagoga, M., see Okhonin, S. Narasaki, M., see Miyazaki, S. Neri, B., see Crupi, F. Ninidze, G.K., see Dobrovolsky, V.N. Nowak, E., see Wu, E.
265– 435– 469– 373– 43– 509– 25–
Ogasawara, M., see Miyazaki, S. Okhonin, S., M. Nagoga, J.-M. Sallese, P. Fazan, O. Faynot, J. Pontcharra and S. Cristoloveanu, Transient effects in PD SOI NMOSFETs Okorn-Schmidt, H., see Gusev, E.P. Olbrich, A., see Porti, M. Olivo, P., see Chimenton, A. Omura, Y., see Komiya, K. Ono, Y., K. Yamazaki, M. Nagase, S. Horiguchi, K. Shiraishi and Y. Takahashi, Single-electron and quantum SOI devices
373– 378 469– 341– 265– 197– 61–
Paccagnella, A., see Bandiera, L. Pananakakis, G., see Lime, F.
49– 53 119– 125
269 442 473 378 47 513 31
473 349 269 201 65
435– 442
522
Author Index Volume 59
172 223 201 211
Pasquarello, A., see Bongiorno, A. Pavan, P., see Bloom, I. Pellati, P., see Chimenton, A. Peng, S.P., see Kuo, D.-S. Polignano, M.L., C. Carpanese, B. Crivelli, A. Giussani, R. Zonca and M. Bersani, Interface properties of annealed and nitrided HTO layers Pontcharra, J., see Okhonin, S. ´ X. Aymerich, A. Olbrich and B. Ebersberger, Propagation of Porti, M., M. Nafrıa, the SiO 2 breakdown event on MOS structures observed with conductive atomic force microscopy Pretet, J., S. Cristoloveanu, N. Hefyene, M. Matsui, Y. Moriyasu and Y. Kawakami, Electrical evaluation of innovating processes for improving SOS materials Pretet, J., N. Subba, D. Ioannou, S. Cristoloveanu, W. Maszara and C. Raynaud, Channel-width dependence of floating body effects in STI- and LOCOS-isolated MOSFETS
167– 213– 197– 203–
Rada, T., see Dittrich, Th. Rahmoune, F. and D. Bauza, Si–SiO 2 interface trap capture properties Raja, M., see Lloyd, G. Rao, V.R., see Kumar, A. Rappich, J., see Dittrich, Th. Rasras, M., see Kaczer, B. Raynaud, C., see Pretet, J. Reimbold, G., see Leroux, C. Revil, N., see Bravaix, A. Richardson, N.V., see Dittrich, Th. Rivera, A., A. van Veen, H. Schut, J.M.M. De Nijs and P. Balk, Interaction of deuterium with SIMOX buried oxide ´ J.B., see Gamiz, ´ Roldan, F. Roman, P., see Lee, D.-O. Ruzyllo, J., see Lee, D.-O.
399– 115– 323– 429– 399– 155– 483– 277– 101– 399–
404 118 328 433 404 160 488 283 108 404
497– 423– 405– 405–
501 427 408 408
Sallese, J.-M., see Okhonin, S. Sangiorgi, E., Selmi, L., Preface Sangiorgi, E., see Mastrapasqua, M. Scarpa, A., G. Tao, J. Dijkstra and F.G. Kuper, Tail bit implications in advanced 2 transistors-flash memory device reliability Schut, H., see Rivera, A. Schwank, J.R., M.R. Shaneyfelt, T.L. Meisenheimer, B.L. Draper, K. Vanhesden and D.M. Fleetwood, Silicon-on-insulator non-volatile field-effect transistor memory Sedghi, N., see Lloyd, G. Seegebrecht, P., see Vexler, M.I. Sellers, I., see Lloyd, G. Selmi, L., see Sangiorgi, E. Selmi, L., see Esseni, D.
469– 473 1 409– 416
379– 384 469– 473
265– 269 443– 448
483– 488
183– 188 497– 501 253– 323– 161– 323–
258 328 166 328 1 55– 60
Author Index Volume 59
Selmi, L., see Esseni, D. Selmi, L., see Mastrapasqua, M. Shaneyfelt, M.R., see Schwank, J.R. Shiraishi, K., see Kageshima, H. Shiraishi, K., see Ono, Y. Shulekin, A.F., see Vexler, M.I. Shyu, D.S., see Kuo, D.-S. Silverman, P., see Alam, M. Silverman, P.J., see Weir, B.E. Silverman, P.J., see Manchanda, L. Skorupa, W., see Gebel, T. Slotboom, M., see Van Schaijk, R. Smith, R., see Campbell, S.A. Sorsch, T.W., see Manchanda, L. Spinelli, A.S., see Ielmini, D. Stahlbush, R.E., P.J. Macfarlane, J.R. Williams, G.Y. Chung, L.C. Feldman and K. McDonald, Light emission from 4H SiC MOSFETs with and without NO passivation Stahlbush, R.E., see Macfarlane, P.J. Stegemann, K.-H., see Gebel, T. Stesmans, A., see Afanas’ev, V.V. Stesmans, A., see Afanas’ev, V.V. Stesmans, A., see Houssa, M. Subba, N., see Pretet, J. Suehle, J.S., see Vogel, E.M. ˜ ´ J., see Wu, E. Sune, ˜ ´ J. and E. Wu, Modeling the breakdown and breakdown statistics of ultra-thin Sune, SiO 2 gate oxides Sung, H.C., see Kuo, D.-S.
523
231– 409– 253– 301– 435– 161– 203– 137– 17– 351– 247– 225– 361– 351– 189–
236 416 258 309 442 166 211 147 23 359 252 229 365 359 195
393– 503– 247– 85– 335– 367– 483– 73– 25–
398 508 252 88 339 371 488 83 31
149– 153 203– 211
Takagi, S. and M. Takayanagi, Carrier transport properties of thin gate oxides after soft and hard breakdown Takahashi, Y., see Ono, Y. Takasu, H., Ferroelectric memories and their applications Takayanagi, M., see Takagi, S. Tao, G., see Scarpa, A. Tao, H.J., see Kuo, D.-S. Thees, H.-J., see Gebel, T. Timoshenko, V.Yu., see Dittrich, Th. Tsai, C.S., see Kuo, D.-S.
5– 435– 237– 5– 183– 203– 247– 399– 203–
Uematsu, M., see Kageshima, H. Uren, M.J., see Zhang, W.D.
301– 309 95– 99
Vallier, L., see Borsoni, G.
311– 315
15 442 246 15 188 211 252 404 211
524
Author Index Volume 59
van Dover, R.B., see Manchanda, L. Van Schaijk, R., N. Wils, M. Slotboom and F. Widdershoven, Compact poly-CMP embedded flash memory van Veen, A., see Rivera, A. Vandooren, A., J.F. Conley Jr., S. Cristoloveanu, M. Mojarradi and E. Kolawa, Degradation mechanisms in SOI n-channel LDMOSFETs Vanhesden, K., see Schwank, J.R. Vannuffel, C., see Borsoni, G. Vayshenker, A., see Wu, E. Vergnaud, C., see Borsoni, G. Vexler, M.I., N. Asli, A.F. Shulekin, B. Meinerzhagen and P. Seegebrecht, Compact quantum model for a silicon MOS tunnel diode Vincent, E., see Bravaix, A. Vogel, E.M., M.D. Edelstein and J.S. Suehle, Reliability of ultra-thin silicon dioxide under substrate hot-electron, substrate hot-hole and tunneling stress von Borany, J., see Gebel, T. Walczak, J. and B. Majkusiak, The remote roughness mobility resulting from the ultrathin SiO 2 thickness nonuniformity in the DG SOI and bulk MOS transistors Wang, C., see Kuo, D.-S. Weir, B., see Alam, M. Weir, B.E., M.A. Alam and P.J. Silverman, Soft breakdown at all positions along the N-MOSFET Whitten, J.L., see Lucovsky, G. Widdershoven, F., see Van Schaijk, R. Widdershoven, F.P., Extraction of gate oxide thickness from C–V measurements Wilk, G., see Manchanda, L. Williams, J.R., see Stahlbush, R.E. Wils, N., see Van Schaijk, R. Wittmaack, M., see Gebel, T. Wong, S.C., see Kuo, D.-S. Wu, C.-T., see Lee, D.-O. ˜ ´ W. Lai, E. Nowak, J. McKenna, A. Vayshenker and D. Harmon, Wu, E., J. Sune, Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin oxides ˜ ´ J. Wu, E., see Sune, Wu, J.P., see Kuo, D.-S. Wyon, C., see Borsoni, G. Yamazaki, K., see Ono, Y. Yeh, J.K., see Kuo, D.-S. Yeh, W.K., C. Huang, T.F. Chen, S. Hsu, J. Liu and F.T. Liou, Thermal effect of 0.1 mm partially depleted SOI CMOSFET Zhang, J.F., C.Z. Zhao, G. Groeseneken, R. Degraeve, J.N. Ellis and C.D. Beech, Relation between hole traps and non-reactive hydrogen-induced positive charges
351– 359 225– 229 497– 501 489– 253– 311– 25– 311–
495 258 315 31 315
161– 166 101– 108 73– 83 247– 252 417– 421 203– 211 137– 147 17– 329– 225– 271– 351– 393– 225– 247– 203– 405–
23 334 229 275 359 398 229 252 211 408
25– 31 149– 153 203– 211 311– 315 435– 442 203– 211 475– 482 67–
72
Author Index Volume 59
Zhang, J.F., see Zhang, W.D. Zhang, J.F., see Zhang, W.D. Zhang, W.D., J.F. Zhang, M. Lalor, D. Burton, G. Groeseneken and R. Degraeve, On the mechanism of electron trap generation in gate oxides Zhang, W.D., J.F. Zhang, M.J. Uren, G. Groeseneken, R. Degraeve, M. Lalor and D. Burton, Dependence of energy distributions of interface states on stress conditions Zhang, Yu., see Lucovsky, G. Zhao, C.Z., see Zhang, J.F. Zingg, R.P., High-voltage, double-gate devices on silicon-on-insulator Zonca, R., see Polignano, M.L.
525
89– 95–
94 99
89–
94
95– 99 329– 334 67– 72 461– 468 379– 384
Author Index Volume 59 Adriaenssens, G.J., see Afanas’ev, V.V. Adriaenssens, G.J., see Afanas’ev, V.V. Afanas’ev, V.V., G.J. Adriaenssens and A. Stesmans, Positive charging of thermal SiO 2 layers: hole trapping versus proton trapping Afanas’ev, V.V., M. Houssa, A. Stesmans, G.J. Adriaenssens and M.M. Heyns, Energy barriers between (100)Si and Al 2 O 3 and ZrO 2 -based dielectric stacks: internal electron photoemission measurements Afanas’ev, V.V., see Houssa, M. Alam, M., B. Weir, J. Bude, P. Silverman and A. Ghetti, A computational model for oxide breakdown: theory and experiments Alam, M.A., see Weir, B.E. Al-Shareef, H.N., G. Bersuker, C. Lim, R. Murto, S. Borthakur, G.A. Brown and H.R. Huff, Plasma nitridation of very thin gate dielectrics Aravamudhan, S., see Manchanda, L. Armstrong, B.M., see Hall, S. Ashburn, P., see Hall, S. Asli, N., see Vexler, M.I. Aymerich, X., see Porti, M. Bain, M., see Hall, S. Balk, P., see Rivera, A. Bandiera, L., A. Cester, A. Paccagnella, G. Ghidini and I. Bloom, Detrended fluctuation analysis of the soft breakdown current Bauza, D., see Rahmoune, F. ´ Bechu, N., see Borsoni, G. Beech, C.D., see Zhang, J.F. Bersani, M., see Polignano, M.L. Bersuker, G., see Al-Shareef, H.N. Bertin, F., see Borsoni, G. Bitzer, T., see Dittrich, Th. Bloom, I., see Bandiera, L. Bloom, I., P. Pavan and B. Eitan, NROM TM — a new non-volatile memory technology: from device to products Bongiorno, A. and A. Pasquarello, Oxygen species in SiO 2 : a first-principles investigation Elsevier Science B.V. PII: S0167-9317( 01 )00696-7
85– 88 335– 339 85–
88
335– 339 367– 371 137– 147 17– 23 317– 351– 449– 449– 161– 265–
322 359 454 454 166 269
449– 454 497– 501 49– 115– 311– 67– 379– 317– 311– 399– 49–
53 118 315 72 384 322 315 404 53
213– 223 167– 172
516
Author Index Volume 59
` N. Bechu, ´ Borsoni, G., V. Le Roux, R. Laffitte, S. Kerdiles, L. Vallier, M.L. Korwin-Pawlowski, C. Vannuffel, F. Bertin, C. Vergnaud, A. Chabli and C. Wyon, Dependence of ultra-thin SiO 2 layers formation by ultra-slow single and multicharged ions on process conditions Borthakur, S., see Al-Shareef, H.N. Bravaix, A., D. Goguenheim, N. Revil and E. Vincent, Hot-carrier reliability study of second and first impact ionization degradation in 0.15-mm channel-length NMOSFETS Breitenstein, O., see Huth, S. Brown, G.A., see Al-Shareef, H.N. Brubaker, M., see Lee, D.-O. Buchanan, D.A., see Gusev, E.P. Bude, J., see Alam, M. Bude, J.D., see Esseni, D. Burton, D., see Zhang, W.D. Burton, D., see Zhang, W.D. Busch, B., see Manchanda, L. Campardo, G. and R. Micheloni, Architecture of non volatile memory with multi-bit cells Campbell, S.A., T.Z. Ma, R. Smith, W.L. Gladfelter and F. Chen, High mobility HfO 2 n- and p-channel transistors ´ Carceller, J.E., see Gamiz, F. Carpanese, C., see Polignano, M.L. Cartier, E., see Ludeke, R. Cartier, E., see Gusev, E.P. Celler, G.K., see Mastrapasqua, M. Cester, A., see Bandiera, L. Chabli, A., see Borsoni, G. Chen, F., see Campbell, S.A. Chen, H.P., see Kuo, D.-S. Chen, T.F., see Yeh, W.K. Chen, Y.T., see Kuo, D.-S. Chih, Y.D., see Kuo, D.-S. Chimenton, A., P. Pellati and P. Olivo, Threshold voltage spread in flash memories under a constant DQ erasing scheme Chu, S., see Kuo, D.-S. Chu, W.T., see Kuo, D.-S. Chung, G.Y., see Stahlbush, R.E. Ciofi, C., see Crupi, F. Clerc, R., see Lime, F. Clerc, R., see Leroux, C. Conley Jr., J.F., see Vandooren, A. Copel, M., see Gusev, E.P.
311– 315 317– 322
101– 109– 317– 405– 341– 137– 55– 89– 95– 351–
108 113 322 408 349 147 60 94 99 359
173– 181 361– 423– 379– 259– 341– 409– 49– 311– 361– 203– 475– 203– 203–
365 427 384 263 349 416 53 315 365 211 482 211 211
197– 203– 203– 393– 43– 119– 277– 489– 341–
201 211 211 398 47 125 283 495 349
Author Index Volume 59
517
Cristoloveanu, S., see Pretet, J. Cristoloveanu, S., see Okhonin, S. Cristoloveanu, S., see Pretet, J. Cristoloveanu, S., see Vandooren, A. Crivelli, B., see Polignano, M.L. Crupi, F., C. Ciofi, G. Iannaccone, B. Neri and S. Lombardo, Current noise at the oxide hard-breakdown
443– 469– 483– 489– 379–
448 473 488 495 384
43–
47
Dantz, D., see Huth, S. Degraeve, R., see Zhang, J.F. Degraeve, R., see Zhang, W.D. Degraeve, R., see Zhang, W.D. Degraeve, R., see Kaczer, B. De Keersgieter, A., see Kaczer, B. de la Houssaye, P.R., see Lagnado, I. D’Emic, C., see Gusev, E.P. de Nijs, J.M.M., see Rivera, A. Di Lucrezia, R., see Lloyd, G. Diener, J., D. Kovalev and F. Koch, Resonant excitation of interfacial Si–O: possibility of nonthermal processing Dijkstra, J., see Scarpa, A. Dittrich, Th., T. Bitzer, T. Rada, N.V. Richardson, V.Yu. Timoshenko, J. Rappich and F. Koch, Defect transformation under growth of submonolayer oxides on silicon surfaces at low temperatures Dobrovolsky, V.N., L.V. Ishchuk and G.K. Ninidze, Reversed electron-hole pair transport in SOI structure Draper, B.L., see Schwank, J.R.
109– 67– 89– 95– 155– 155– 455– 341– 497– 323–
113 72 94 99 160 160 459 349 501 328
Ebersberger, B., see Porti, M. Eccleston, B., see Lloyd, G. Eccleston, W., Carrier generation and current flow at the interface between polysilicon and an SiO 2 gate dielectric Edelstein, M.D., see Vogel, E.M. Eitan, B., see Bloom, I. El Mubarek, H.A.W., see Hall, S. Ellis, J.N., see Zhang, J.F. Esseni, D., J.D. Bude and L. Selmi, Experimental study of low voltage anode hole injection in thin oxides Esseni, D. and L. Selmi, BipFLASH: A novel non-volatile memory cell concept for high-speed, low-power applications Esseni, D., see Mastrapasqua, M.
265– 269 323– 328
Faynot, O., see Okhonin, S. Fazan, P., see Okhonin, S. Feldman, L.C., see Stahlbush, R.E.
469– 473 469– 473 393– 398
291– 294 183– 188
399– 404 509– 513 253– 258
295– 300 73– 83 213– 223 449– 454 67– 72 55–
60
231– 236 409– 416
518
Author Index Volume 59
Fiegna, C., see Mastrapasqua, M. Fleetwood, D.M., see Schwank, J.R. Fong, T.J., see Kuo, D.-S.
409– 416 253– 258 203– 211
Gamble, H., see Hall, S. ´ ´ ´ ´ Gamiz, F., J.B. Roldan, J.A. Lopez-Villanueva, F. Jimenez-Molinos and J.E. Carceller, Electron transport in ultrathin double-gate SOI devices Gebel, T., J. Von Borany, H.-J. Thees, M. Wittmaack, K.-H. Stegemann and W. Skorupa, Non-volatile memories based on Si 1 -implanted gate oxides Ghetti, A., Characterization and modeling of the tunneling current in Si–SiO 2 –Si structures with ultra-thin oxide layer Ghetti, A., see Alam, M. Ghibaudo, G., see Lime, F. Ghibaudo, G., see Leroux, C. Ghidini, G., see Bandiera, L. Giussani, A., see Polignano, M.L. Gladfelter, W.L., see Campbell, S.A. Goguenheim, D., see Bravaix, A. Gouker, P., see Mrstik, B.J. Grant, R., see Lee, D.-O. Green, M.L., see Manchanda, L. Gribelyuk, M., see Gusev, E.P. Groeseneken, G., see Zhang, J.F. Groeseneken, G., see Zhang, W.D. Groeseneken, G., see Zhang, W.D. Groeseneken, G., see Kaczer, B. ´ Guegan, G., see Lime, F. Gusev, E.P., E. Cartier, D.A. Buchanan, M. Gribelyuk, M. Copel, H. Okorn-Schmidt and C. D’Emic, Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues
449– 454
Hall, S., A.C. Lamb, M. Bain, B.M. Armstrong, H. Gamble, H.A.W. El Mubarek and P. Ashburn, SiGe HBTs on bonded wafer substrates Harmon, D., see Wu, E. Hefyene, N., see Pretet, J. Heyns, M.M., see Afanas’ev, V.V. Heyns, M.M., see Houssa, M. Higgins, S., see Lloyd, G. Hirose, M., see Miyazaki, S. Hong, J.G., see Johnson, R.S. Horiguchi, S., see Ono, Y. Horn, M., see Lee, D.-O. Houssa, M., see Afanas’ev, V.V.
423– 427 247– 252 127– 137– 119– 277– 49– 379– 361– 101– 285– 405– 351– 341– 67– 89– 95– 155– 119–
136 147 125 283 53 384 365 108 289 408 359 349 72 94 99 160 125
341– 349
449– 25– 443– 335– 367– 323– 373– 385– 435– 405– 335–
454 31 448 339 371 328 378 391 442 408 339
Author Index Volume 59
Houssa, M., V.V. Afanas’ev, A. Stesmans and M.M. Heyns, Defect generation in ultra-thin SiO 2 gate layers and SiO 2 / ZrO 2 gate stacks and the dispersive transport model Hsieh, C.H., see Kuo, D.-S. Hsieh, C.T., see Kuo, D.-S. Hsu, C.Y., see Kuo, D.-S. Hsu, S., see Yeh, W.K. Huang, C., see Yeh, W.K. Huang, Y.C., see Kuo, D.-S. Huber, A., see Huth, S. Huff, H.R., see Al-Shareef, H.N. Hughes, H.L., see Mrstik, B.J. Huth, S., O. Breitenstein, A. Huber, D. Dantz and U. Lambert, Localization and detailed investigation of gate oxide integrity defects in silicon MOS structures Iannaccone, G., see Crupi, F. Ielmini, D., A.S. Spinelli, A.L. Lacaita and A. Modelli, A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories Ioannou, D., see Pretet, J. Ishchuk, L.V., see Dobrovolsky, V.N. ´ ´ Jimenez-Molinos, F., see Gamiz, F. Johnson, R.S., G. Lucovsky and J. Goo Hong, Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al 2 O 3 –Ta 2 O 5 alloys Kaczer, B., R. Degraeve, A. De Keersgieter, M. Rasras and G. Groeseneken, Explanation of nMOSFET substrate current after hard gate oxide breakdown Kageshima, H., M. Uematsu and K. Shiraishi, Theory of thermal Si oxide growth rate taking into account interfacial Si emission effects Kawakami, Y., see Pretet, J. ` S., see Borsoni, G. Kerdiles, Klemens, F., see Manchanda, L. Koch, F., see Diener, J. Koch, F., see Dittrich, Th. Kolawa, E., see Vandooren, A. Komiya, K. and Y. Omura, Spectroscopic analysis of stress-induced defects in thin silicon oxide films Korwin-Pawlowski, M.L., see Borsoni, G. Kovalev, D., see Diener, J. Kumar, A., R. Lal and V.R. Rao, A simple and direct technique for interface characterization of SOI MOSFETs and its application in hot carrier degradation studies in sub-100 nm JVD MNSFETs Kuo, D.-S., C. Wang, S. Chu, M.S. Liang, C.S. Tsai, H.J. Tao, Y.C. Huang, J.P. Wu, Y.T. Chen, Y.D. Chih, C.H. Hsieh, H.C. Sung, J.K. Yeh, C.J. Lin, S.C. Wong, S.H. Lin, C.T. Hsieh, W.T. Chu, H.P. Chen, C.Y. Hsu, D.S. Shyu, S.P. Peng, T.J. Fong and K.Y. Lee, A flash-based SOC technology using a split-gate cell
519
367– 203– 203– 203– 475– 475– 203– 109– 317– 285–
371 211 211 211 482 482 211 113 322 289
109– 113 43–
47
189– 195 483– 488 509– 513 423– 427 385– 391 155– 160 301– 443– 311– 351– 291– 399– 489–
309 448 315 359 294 404 495
61– 65 311– 315 291– 294
429– 433
203– 211
520
Author Index Volume 59
Kuper, F.G., see Scarpa, A.
183– 188
Lacaita, A.L., see Ielmini, D. Laffitte, R., see Borsoni, G. Lagnado, I. and P.R. De la Houssaye, Integration of Si and SiGe with Al 2 O 3 (sapphire) Lai, W., see Wu, E. Lal, R., see Kumar, A. Lalor, M., see Zhang, W.D. Lalor, M., see Zhang, W.D. Lamb, A.C., see Hall, S. Lambert, U., see Huth, S. Le Roux, V., see Borsoni, G. Lee, D.-O., P. Roman, C.-T. Wu, W. Mahoney, M. Horn, P. Mumbauer, M. Brubaker, R. Grant and J. Ruzyllo, Studies of mist deposited high-k dielectrics for MOS gates Lee, K.Y., see Kuo, D.-S. Leroux, C., G. Ghibaudo, G. Reimbold, R. Clerc and S. Mathieu, Extraction of oxide thickness in the nanometer range using C(V ) characteristics Liang, M.S., see Kuo, D.-S. Lim, C., see Al-Shareef, H.N. ´ Lime, F., R. Clerc, G. Ghibaudo, G. Pananakakis and G. Guegan, Impact of gate tunneling leakage on the operation of NMOS transistors with ultra-thin gate oxides Lin, C.J., see Kuo, D.-S. Lin, S.H., see Kuo, D.-S. Liou, F.T., see Yeh, W.K. Liu, J., see Yeh, W.K. Lloyd, G., M. Raja, I. Sellers, N. Sedghi, R. Di Lucrezia, S. Higgins and B. Eccleston, The properties of MOS structures using conjugated polymers as the semiconductor Lombardo, S., Intrinsic dielectric breakdown of ultra-thin gate oxides Lombardo, S., see Crupi, F. ´ ´ Lopez-Villanueva, J.A., see Gamiz, F. Lucovsky, G., J.L. Whitten and Yu. Zhang, A molecular orbital model for the electronic structure of transition metal atoms in silicate and aluminate alloys Lucovsky, G., see Johnson, R.S. Ludeke, R. and E. Cartier, Imaging of oxide and interface charges in SiO 2 –Si
189– 195 311– 315
Ma, T.Z., see Campbell, S.A. Macfarlane, P.J., see Stahlbush, R.E. Macfarlane, P.J. and R.E. Stahlbush, Trapping dependent H 1 motion in SIMOX buried oxides Mahoney, W., see Lee, D.-O. Majkusiak, B., see Walczak, J.
455– 25– 429– 89– 95– 449– 109– 311–
459 31 433 94 99 454 113 315
405– 408 203– 211 277– 283 203– 211 317– 322 119– 203– 203– 475– 475–
125 211 211 482 482
323– 328 33– 42 43– 47 423– 427 329– 334 385– 391 259– 263 361– 365 393– 398 503– 508 405– 408 417– 421
Author Index Volume 59
Manchanda, L., M.D. Morris, M.L. Green, R.B. Van Dover, F. Klemens, T.W. Sorsch, P.J. Silverman, G. Wilk, B. Busch and S. Aravamudhan, Multi-component high-K gate dielectrics for the silicon industry Mastrapasqua, M., D. Esseni, G.K. Celler, C. Fiegna, L. Selmi and E. Sangiorgi, Measurements of low field mobility in ultra-thin SOI n- and p-MOSFETs Maszara, W., see Pretet, J. Mathieu, S., see Leroux, C. Matsui, M., see Pretet, J. McDonald, K., see Stahlbush, R.E. McKenna, J., see Wu, E. McMarr, P.J., see Mrstik, B.J. Meinerzhagen, B., see Vexler, M.I. Meisenheimer, T.L., see Schwank, J.R. Micheloni, R., see Campardo, G. Miyazaki, S., M. Narasaki, M. Ogasawara and M. Hirose, Characterization of ultrathin zirconium oxide films on silicon using photoelectron spectroscopy Modelli, A., see Ielmini, D. Mojarradi, M., see Vandooren, A. Moriyasu, Y., see Pretet, J. Morris, M.D., see Manchanda, L. Mrstik, B.J., H.L. Hughes, P.J. McMarr and P. Gouker, Electron and hole trapping in thermal oxides that have been ion implanted Mumbauer, P., see Lee, D.-O. Murto, R., see Al-Shareef, H.N.
521
351– 359 409– 483– 277– 443– 393– 25– 285– 161– 253– 173–
416 488 283 448 398 31 289 166 258 181
373– 189– 489– 443– 351–
378 195 495 448 359
285– 289 405– 408 317– 322
´ M., see Porti, M. Nafrıa, Nagase, M., see Ono, Y. Nagoga, M., see Okhonin, S. Narasaki, M., see Miyazaki, S. Neri, B., see Crupi, F. Ninidze, G.K., see Dobrovolsky, V.N. Nowak, E., see Wu, E.
265– 435– 469– 373– 43– 509– 25–
Ogasawara, M., see Miyazaki, S. Okhonin, S., M. Nagoga, J.-M. Sallese, P. Fazan, O. Faynot, J. Pontcharra and S. Cristoloveanu, Transient effects in PD SOI NMOSFETs Okorn-Schmidt, H., see Gusev, E.P. Olbrich, A., see Porti, M. Olivo, P., see Chimenton, A. Omura, Y., see Komiya, K. Ono, Y., K. Yamazaki, M. Nagase, S. Horiguchi, K. Shiraishi and Y. Takahashi, Single-electron and quantum SOI devices
373– 378 469– 341– 265– 197– 61–
Paccagnella, A., see Bandiera, L. Pananakakis, G., see Lime, F.
49– 53 119– 125
269 442 473 378 47 513 31
473 349 269 201 65
435– 442
522
Author Index Volume 59
172 223 201 211
Pasquarello, A., see Bongiorno, A. Pavan, P., see Bloom, I. Pellati, P., see Chimenton, A. Peng, S.P., see Kuo, D.-S. Polignano, M.L., C. Carpanese, B. Crivelli, A. Giussani, R. Zonca and M. Bersani, Interface properties of annealed and nitrided HTO layers Pontcharra, J., see Okhonin, S. ´ X. Aymerich, A. Olbrich and B. Ebersberger, Propagation of Porti, M., M. Nafrıa, the SiO 2 breakdown event on MOS structures observed with conductive atomic force microscopy Pretet, J., S. Cristoloveanu, N. Hefyene, M. Matsui, Y. Moriyasu and Y. Kawakami, Electrical evaluation of innovating processes for improving SOS materials Pretet, J., N. Subba, D. Ioannou, S. Cristoloveanu, W. Maszara and C. Raynaud, Channel-width dependence of floating body effects in STI- and LOCOS-isolated MOSFETS
167– 213– 197– 203–
Rada, T., see Dittrich, Th. Rahmoune, F. and D. Bauza, Si–SiO 2 interface trap capture properties Raja, M., see Lloyd, G. Rao, V.R., see Kumar, A. Rappich, J., see Dittrich, Th. Rasras, M., see Kaczer, B. Raynaud, C., see Pretet, J. Reimbold, G., see Leroux, C. Revil, N., see Bravaix, A. Richardson, N.V., see Dittrich, Th. Rivera, A., A. van Veen, H. Schut, J.M.M. De Nijs and P. Balk, Interaction of deuterium with SIMOX buried oxide ´ J.B., see Gamiz, ´ Roldan, F. Roman, P., see Lee, D.-O. Ruzyllo, J., see Lee, D.-O.
399– 115– 323– 429– 399– 155– 483– 277– 101– 399–
404 118 328 433 404 160 488 283 108 404
497– 423– 405– 405–
501 427 408 408
Sallese, J.-M., see Okhonin, S. Sangiorgi, E., Selmi, L., Preface Sangiorgi, E., see Mastrapasqua, M. Scarpa, A., G. Tao, J. Dijkstra and F.G. Kuper, Tail bit implications in advanced 2 transistors-flash memory device reliability Schut, H., see Rivera, A. Schwank, J.R., M.R. Shaneyfelt, T.L. Meisenheimer, B.L. Draper, K. Vanhesden and D.M. Fleetwood, Silicon-on-insulator non-volatile field-effect transistor memory Sedghi, N., see Lloyd, G. Seegebrecht, P., see Vexler, M.I. Sellers, I., see Lloyd, G. Selmi, L., see Sangiorgi, E. Selmi, L., see Esseni, D.
469– 473 1 409– 416
379– 384 469– 473
265– 269 443– 448
483– 488
183– 188 497– 501 253– 323– 161– 323–
258 328 166 328 1 55– 60
Author Index Volume 59
Selmi, L., see Esseni, D. Selmi, L., see Mastrapasqua, M. Shaneyfelt, M.R., see Schwank, J.R. Shiraishi, K., see Kageshima, H. Shiraishi, K., see Ono, Y. Shulekin, A.F., see Vexler, M.I. Shyu, D.S., see Kuo, D.-S. Silverman, P., see Alam, M. Silverman, P.J., see Weir, B.E. Silverman, P.J., see Manchanda, L. Skorupa, W., see Gebel, T. Slotboom, M., see Van Schaijk, R. Smith, R., see Campbell, S.A. Sorsch, T.W., see Manchanda, L. Spinelli, A.S., see Ielmini, D. Stahlbush, R.E., P.J. Macfarlane, J.R. Williams, G.Y. Chung, L.C. Feldman and K. McDonald, Light emission from 4H SiC MOSFETs with and without NO passivation Stahlbush, R.E., see Macfarlane, P.J. Stegemann, K.-H., see Gebel, T. Stesmans, A., see Afanas’ev, V.V. Stesmans, A., see Afanas’ev, V.V. Stesmans, A., see Houssa, M. Subba, N., see Pretet, J. Suehle, J.S., see Vogel, E.M. ˜ ´ J., see Wu, E. Sune, ˜ ´ J. and E. Wu, Modeling the breakdown and breakdown statistics of ultra-thin Sune, SiO 2 gate oxides Sung, H.C., see Kuo, D.-S.
523
231– 409– 253– 301– 435– 161– 203– 137– 17– 351– 247– 225– 361– 351– 189–
236 416 258 309 442 166 211 147 23 359 252 229 365 359 195
393– 503– 247– 85– 335– 367– 483– 73– 25–
398 508 252 88 339 371 488 83 31
149– 153 203– 211
Takagi, S. and M. Takayanagi, Carrier transport properties of thin gate oxides after soft and hard breakdown Takahashi, Y., see Ono, Y. Takasu, H., Ferroelectric memories and their applications Takayanagi, M., see Takagi, S. Tao, G., see Scarpa, A. Tao, H.J., see Kuo, D.-S. Thees, H.-J., see Gebel, T. Timoshenko, V.Yu., see Dittrich, Th. Tsai, C.S., see Kuo, D.-S.
5– 435– 237– 5– 183– 203– 247– 399– 203–
Uematsu, M., see Kageshima, H. Uren, M.J., see Zhang, W.D.
301– 309 95– 99
Vallier, L., see Borsoni, G.
311– 315
15 442 246 15 188 211 252 404 211
524
Author Index Volume 59
van Dover, R.B., see Manchanda, L. Van Schaijk, R., N. Wils, M. Slotboom and F. Widdershoven, Compact poly-CMP embedded flash memory van Veen, A., see Rivera, A. Vandooren, A., J.F. Conley Jr., S. Cristoloveanu, M. Mojarradi and E. Kolawa, Degradation mechanisms in SOI n-channel LDMOSFETs Vanhesden, K., see Schwank, J.R. Vannuffel, C., see Borsoni, G. Vayshenker, A., see Wu, E. Vergnaud, C., see Borsoni, G. Vexler, M.I., N. Asli, A.F. Shulekin, B. Meinerzhagen and P. Seegebrecht, Compact quantum model for a silicon MOS tunnel diode Vincent, E., see Bravaix, A. Vogel, E.M., M.D. Edelstein and J.S. Suehle, Reliability of ultra-thin silicon dioxide under substrate hot-electron, substrate hot-hole and tunneling stress von Borany, J., see Gebel, T. Walczak, J. and B. Majkusiak, The remote roughness mobility resulting from the ultrathin SiO 2 thickness nonuniformity in the DG SOI and bulk MOS transistors Wang, C., see Kuo, D.-S. Weir, B., see Alam, M. Weir, B.E., M.A. Alam and P.J. Silverman, Soft breakdown at all positions along the N-MOSFET Whitten, J.L., see Lucovsky, G. Widdershoven, F., see Van Schaijk, R. Widdershoven, F.P., Extraction of gate oxide thickness from C–V measurements Wilk, G., see Manchanda, L. Williams, J.R., see Stahlbush, R.E. Wils, N., see Van Schaijk, R. Wittmaack, M., see Gebel, T. Wong, S.C., see Kuo, D.-S. Wu, C.-T., see Lee, D.-O. ˜ ´ W. Lai, E. Nowak, J. McKenna, A. Vayshenker and D. Harmon, Wu, E., J. Sune, Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin oxides ˜ ´ J. Wu, E., see Sune, Wu, J.P., see Kuo, D.-S. Wyon, C., see Borsoni, G. Yamazaki, K., see Ono, Y. Yeh, J.K., see Kuo, D.-S. Yeh, W.K., C. Huang, T.F. Chen, S. Hsu, J. Liu and F.T. Liou, Thermal effect of 0.1 mm partially depleted SOI CMOSFET Zhang, J.F., C.Z. Zhao, G. Groeseneken, R. Degraeve, J.N. Ellis and C.D. Beech, Relation between hole traps and non-reactive hydrogen-induced positive charges
351– 359 225– 229 497– 501 489– 253– 311– 25– 311–
495 258 315 31 315
161– 166 101– 108 73– 83 247– 252 417– 421 203– 211 137– 147 17– 329– 225– 271– 351– 393– 225– 247– 203– 405–
23 334 229 275 359 398 229 252 211 408
25– 31 149– 153 203– 211 311– 315 435– 442 203– 211 475– 482 67–
72
Author Index Volume 59
Zhang, J.F., see Zhang, W.D. Zhang, J.F., see Zhang, W.D. Zhang, W.D., J.F. Zhang, M. Lalor, D. Burton, G. Groeseneken and R. Degraeve, On the mechanism of electron trap generation in gate oxides Zhang, W.D., J.F. Zhang, M.J. Uren, G. Groeseneken, R. Degraeve, M. Lalor and D. Burton, Dependence of energy distributions of interface states on stress conditions Zhang, Yu., see Lucovsky, G. Zhao, C.Z., see Zhang, J.F. Zingg, R.P., High-voltage, double-gate devices on silicon-on-insulator Zonca, R., see Polignano, M.L.
525
89– 95–
94 99
89–
94
95– 99 329– 334 67– 72 461– 468 379– 384