CdxHg1−xTe epitaxial layers as infrared detectors

486

AUTHORS

Cd,Hg,_,Te

E. IGKAS, InStitI.ite

(Paper

of

ABSTRACTS

epitaxial layers as infrared detectors

T. PERSAK

Quantum

AND J. PIOTROWSKI

Electronics,

01489

Warsaw (Poland)

1 Z-04)

Cd,Hg,_,Te graded gap epitaxial layers were fabricated by the isothermal deposition of HgTe onto CdTe wafers. The layers were used for the construction of infrared detectors working in the photovoltaic mode. In contrast to the technology described previously’ a new technique for the preparation of p-n junctions with a p-type surface layer is given. The spectral and current-voltage characteristics of the junctions were measured. The main advantages of photovoltaic detectors using these p-n junctions are discussed. 1 G. Cohen-Solal

and Y. Riant,Appl.

PIzys. Letf.,

I Y (1971)

435.