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Chemical vapor deposition, trends and equipment
398
World Abstracts on Microelectronics and Reliability
Vibration-thermal screening reliability prediction. H. B. CH~NOWETH. IEEE Proc. Reliab., 91 (1982). The method developed by Coffin-Manson and extended by Lambert for predicting low-level fatigue failure for electronic assemblies is utilized to determine the expected reliability. The reliability is determined for small damping, inelastic Iow-cycle fatigue
with a catastrophic failure mode with a thermal cycling failure mode (correlated). These are integrated into a model to produce a method of characterizing the reliability benefit of screening methodology in terms of material parameters, thermal characteristics, and dynamic variables. An example is developed and a prediction generated.
4. M I C R O E L E C T R O N 1 C S - G E N E R A L VHSIC's industry impact. DAVID H. MOORE and WILLIAMJ. TDWLE. IEEE Trans. Components Hybrids mfg Technol. CHMT-5 (2), 241 (1982). The very high speed integrated circuit (VHSIC) program is affecting the military integrated circuits market significantly by accelerating: ( l ) the development of military-relevant very large scale integrated circuits technology; and (2)the application of advanced circuit technology in operational systems by focusing the attention of military electronics producers upon integrating the design, development, and production of components, software, and systems. The VHSIC program has less impact on the non-
5. M I C R O E L E C T R O N I C S
military portion of the industry because it does not generate large transfers of resources away from other markets to the military market, nor are the probabilities high that it will generate independent process, product, or organizational outputs likely to have a major effect on other markets.
Advances in GaAs ICs highlighted. Micrm~ave SysI. News, 45 (June 1982). SOS, CMOS, silicon bipolar fabrications, and other technologies continue meriting consideration from designers for the foreseeable future.
DESIGN AND CONSTRUCTION
Analysis of N 2 plasma to characterize plasma etching systems. WILLIAM R. HARSHBARGER. Solid St. Technol., 126 (April 1982). The optical emission of an N2 plasma gives information about plasma etching systems. Analysis of the spectra from these discharges indicates excitation mechanisms, electron energies and gas temperatures. Plasma parameters obtained from this analysis can be used to interpret the effect that reactor or process conditions such as discharge frequency, electrode material, pressure and gas mixture, have on processing semiconductor materials. Counting and identifying particles in high purity water. MARJORIE K. BALAZS and SUSAN WALKER. Semiconductor Int., t01 (April 1982). Seemingly pure water can contain objectionable particulates. Understanding the nature of the particles and knowing how to count and measure them is important to avoiding potential process line problems. Endpoint detection in a batch loaded planar etcher. C. S. KOrMAr< Solid St. Technol., 115 (April 1982). Mass spectrometric and optical emission techniques have been applied to the control of aluminum and polysilicon etching in carbon tetrachloride based-plasmas. An analysis made of the plasma discharge during aluminum and polysilicon etching has indicated several emission bands and mass spectral lines suitable for endpoint detection. In particular, the intensities of the optical emission bands at 309.8 nm (AI), 287.1 nm (SiCI), 199.1 nm (HC1), 308.9 nm (CI) and the mass spectral line at m/e = 64 (SiCI + ) are related to etch rate and completion of etch. Data are presented which illustrate the practical utilization of spectroscopic techniques for the control of etching and process development in a production batch loaded planar reactor. Emphasis is placed on such difficulties as partially filled batches and overetch factors. RFI prevention in RF plasma systems. H. D. ALCAIDE. Solid St. Technol., 171 (April 1982). Modern semiconductor processing equipment, in order to produce high, hence profitable yields, requires precision control of its variables. Unfortunately, high precision equipment must have high resolution, and so it is inherently more susceptible to interference from rf sources. While a tremendous body of pertinent literature exists accurately describing the theory of RFI prevention in exorbitant detail, the depth of most presentations makes application difficult. This paper is an attempt to summarize in a practical and useful way those techniques that have proven desirable or necessary in order to use
sensitive electronic equipment effective)y with rf plasma systems.
Single wafer plasma etching. I. AI and AI/Si alloys. R. F. RE1CHELDERFER. Solid St. Technol., 160 (April 1982). The current and future demands on wafer size and handling coupled with linewidth control have brought about great interest in the concept of single-wafer plasma etching. This paper discusses the development of AI or AI/Si alloy etching in the single-wafer concept. Various reagent mixtures were studied and the results evaluated in terms of key factors such as etch rate, anisotropy, seleetivities and photoresist integrity and erosion rate. Avoiding post-etch corrosion of the etched wafers is also discussed. Online wafer analysis with spectrometers. Semiconductor Ira., 40 (March 1982). X-ray and infrared spectrometers have become important instruments for on-the-production-line wafer analysis. They are used to build quality into semiconductor products by assuring a manufacturer that incoming wafers and thin-film deposition processes are under control. Chemical vapor deposition of inorganic glass films. WERNER KERN. Semiconductor Int., 89 (March 1982). Chemical vapor deposition is a powerful method for synthesizing a variety of inorganic glasses at temperatures as low as 300°C. Several of these glasses, including oxides, binary and ternary silicates, nitrides, and oxynitrides, have important applications in semiconductor electronics, especially films deposited for dielectric isolation, device passivation, and impurity gettering. The basics of glass formation by CVD methods and the important properties of the CVD glass films are reviewed. Chemical vapor deposition, trends and equipment. TLD C. BETTES.Semiconductor Int., 59 (March 1982). New techniques and equipment and the high reliability of older procedures places increased emphasis on CVD processing methods. Many available systems are very flexible in their processing capabilities. Tolerance effects in submicroampere current generator design. B. L. HART and R. W. J. BARKER.Microelectron. J. 13 (2), 22 (1982). It is shown that recently proposed monolithic low current generators employing the principle of "power-law current division" require some form of on-chip trimming if a close definition of output current is required.
World Abstracts on Microelectronics and Reliability
Vibration-thermal screening reliability prediction. H. B. CH~NOWETH. IEEE Proc. Reliab., 91 (1982). The method developed by Coffin-Manson and extended by Lambert for predicting low-level fatigue failure for electronic assemblies is utilized to determine the expected reliability. The reliability is determined for small damping, inelastic Iow-cycle fatigue
with a catastrophic failure mode with a thermal cycling failure mode (correlated). These are integrated into a model to produce a method of characterizing the reliability benefit of screening methodology in terms of material parameters, thermal characteristics, and dynamic variables. An example is developed and a prediction generated.
4. M I C R O E L E C T R O N 1 C S - G E N E R A L VHSIC's industry impact. DAVID H. MOORE and WILLIAMJ. TDWLE. IEEE Trans. Components Hybrids mfg Technol. CHMT-5 (2), 241 (1982). The very high speed integrated circuit (VHSIC) program is affecting the military integrated circuits market significantly by accelerating: ( l ) the development of military-relevant very large scale integrated circuits technology; and (2)the application of advanced circuit technology in operational systems by focusing the attention of military electronics producers upon integrating the design, development, and production of components, software, and systems. The VHSIC program has less impact on the non-
5. M I C R O E L E C T R O N I C S
military portion of the industry because it does not generate large transfers of resources away from other markets to the military market, nor are the probabilities high that it will generate independent process, product, or organizational outputs likely to have a major effect on other markets.
Advances in GaAs ICs highlighted. Micrm~ave SysI. News, 45 (June 1982). SOS, CMOS, silicon bipolar fabrications, and other technologies continue meriting consideration from designers for the foreseeable future.
DESIGN AND CONSTRUCTION
Analysis of N 2 plasma to characterize plasma etching systems. WILLIAM R. HARSHBARGER. Solid St. Technol., 126 (April 1982). The optical emission of an N2 plasma gives information about plasma etching systems. Analysis of the spectra from these discharges indicates excitation mechanisms, electron energies and gas temperatures. Plasma parameters obtained from this analysis can be used to interpret the effect that reactor or process conditions such as discharge frequency, electrode material, pressure and gas mixture, have on processing semiconductor materials. Counting and identifying particles in high purity water. MARJORIE K. BALAZS and SUSAN WALKER. Semiconductor Int., t01 (April 1982). Seemingly pure water can contain objectionable particulates. Understanding the nature of the particles and knowing how to count and measure them is important to avoiding potential process line problems. Endpoint detection in a batch loaded planar etcher. C. S. KOrMAr< Solid St. Technol., 115 (April 1982). Mass spectrometric and optical emission techniques have been applied to the control of aluminum and polysilicon etching in carbon tetrachloride based-plasmas. An analysis made of the plasma discharge during aluminum and polysilicon etching has indicated several emission bands and mass spectral lines suitable for endpoint detection. In particular, the intensities of the optical emission bands at 309.8 nm (AI), 287.1 nm (SiCI), 199.1 nm (HC1), 308.9 nm (CI) and the mass spectral line at m/e = 64 (SiCI + ) are related to etch rate and completion of etch. Data are presented which illustrate the practical utilization of spectroscopic techniques for the control of etching and process development in a production batch loaded planar reactor. Emphasis is placed on such difficulties as partially filled batches and overetch factors. RFI prevention in RF plasma systems. H. D. ALCAIDE. Solid St. Technol., 171 (April 1982). Modern semiconductor processing equipment, in order to produce high, hence profitable yields, requires precision control of its variables. Unfortunately, high precision equipment must have high resolution, and so it is inherently more susceptible to interference from rf sources. While a tremendous body of pertinent literature exists accurately describing the theory of RFI prevention in exorbitant detail, the depth of most presentations makes application difficult. This paper is an attempt to summarize in a practical and useful way those techniques that have proven desirable or necessary in order to use
sensitive electronic equipment effective)y with rf plasma systems.
Single wafer plasma etching. I. AI and AI/Si alloys. R. F. RE1CHELDERFER. Solid St. Technol., 160 (April 1982). The current and future demands on wafer size and handling coupled with linewidth control have brought about great interest in the concept of single-wafer plasma etching. This paper discusses the development of AI or AI/Si alloy etching in the single-wafer concept. Various reagent mixtures were studied and the results evaluated in terms of key factors such as etch rate, anisotropy, seleetivities and photoresist integrity and erosion rate. Avoiding post-etch corrosion of the etched wafers is also discussed. Online wafer analysis with spectrometers. Semiconductor Ira., 40 (March 1982). X-ray and infrared spectrometers have become important instruments for on-the-production-line wafer analysis. They are used to build quality into semiconductor products by assuring a manufacturer that incoming wafers and thin-film deposition processes are under control. Chemical vapor deposition of inorganic glass films. WERNER KERN. Semiconductor Int., 89 (March 1982). Chemical vapor deposition is a powerful method for synthesizing a variety of inorganic glasses at temperatures as low as 300°C. Several of these glasses, including oxides, binary and ternary silicates, nitrides, and oxynitrides, have important applications in semiconductor electronics, especially films deposited for dielectric isolation, device passivation, and impurity gettering. The basics of glass formation by CVD methods and the important properties of the CVD glass films are reviewed. Chemical vapor deposition, trends and equipment. TLD C. BETTES.Semiconductor Int., 59 (March 1982). New techniques and equipment and the high reliability of older procedures places increased emphasis on CVD processing methods. Many available systems are very flexible in their processing capabilities. Tolerance effects in submicroampere current generator design. B. L. HART and R. W. J. BARKER.Microelectron. J. 13 (2), 22 (1982). It is shown that recently proposed monolithic low current generators employing the principle of "power-law current division" require some form of on-chip trimming if a close definition of output current is required.