Contents (Parts A and B)

Journal of Non-Crystalline Solids 299–302 (2002) vii–xix www.elsevier.com/locate/jnoncrysol

Contents Contents Part A and B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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PART A The Mott Lecture Hydrogen and semiconductors: from surface to bulk and back L. Ley . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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Section 1. Growth of amorphous and microcrystalline silicon Amorphous silicon films and solar cells deposited by HWCVD at ultra-high deposition rates (Invited paper) A.H. Mahan, Y. Xu, E. Iwaniczko, D.L. Williamson, B.P. Nelson and Q. Wang. . . . . . . . . . . . . . . . . . . . Effects of atomic hydrogen in gas phase on a-Si:H and poly-Si growth by catalytic CVD H. Umemoto, Y. Nozaki, M. Kitazoe, K. Horii, K. Ohara, D. Morita, K. Uchida, Y. Ishibashi, M. Komoda, K. Kamesaki, A. Izumi, A. Masuda and H. Matsumura . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Studies on grain boundaries in nanocrystalline silicon grown by hot-wire CVD M. Fonrodona, D. Soler, J.M. Asensi, J. Bertomeu and J. Andreu . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Effect of deuterium on the growth process of poly-silicon film by hot-wire chemical vapour deposition J.K. Rath and R.E.I. Schropp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Chemical kinetics for film growth in silicon HWCVD K. Tonokura, K. Inoue and M. Koshi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . The properties of a-Si:H films deposited on Mylar substrates by hot-wire plasma assisted technique I. Ferreira, E. Fortunato, L. Pereira, M.E.V. Costa and R. Martins . . . . . . . . . . . . . . . . . . . . . . . . . . . . Simulations of the gas flux distribution for different gas showers and filament geometries on the large-area deposition of amorphous silicon by hot-wire CVD A. Pfl€ uger and B. Schr€ oder . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Complex dynamics during the reactive scattering of Siþ ð2 PÞ and H2 N. Cha^abane, H. Vach and G.H. Peslherbe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Binding and surface diffusion of SiH3 radicals on a growing a-Si:H surface R. Dewarrat and J. Robertson . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Use of real-time ion-mass spectrometry and discharge voltage trending for analysis of a-Si DC plasma CVD processes G. Ganguly, J. Newton, D.E. Carlson and R.R. Arya . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Time-resolved layer thickness behavior of microcrystalline and amorphous silicon samples after switching on a hydrogen/silane VHF plasma R. Terasa, M. Albert, J.W. Bartha, H. Brechtel and A. Kottwitz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Ion bombardment effects on the microcrystalline silicon growth mechanisms and structure B. Kalache, A.I. Kosarev, R. Vanderhaghen and P. Roca i Cabarrocas . . . . . . . . . . . . . . . . . . . . . . . . . . Phase diagrams for Si:H film growth by plasma-enhanced chemical vapor deposition A.S. Ferlauto, R.J. Koval, C.R. Wronski and R.W. Collins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0022-3093/02/$ - see front matter Ó 2002 Elsevier Science B.V. All rights reserved. PII: S 0 0 2 2 - 3 0 9 3 ( 0 2 ) 0 1 2 2 1 - 8

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Mechanism of argon treatment on a growing surface in layer-by-layer deposition of hydrogenated amorphous silicon A.C.W. Biebericher, W.F. van der Weg, W.J. Goedheer and J.K. Rath . . . . . . . . . . . . . . . . . . . . . . . . . . Deposition of microcrystalline silicon solar cells via the pulsed PECVD technique U.K. Das, S. Morrison and A. Madan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Growth of large-grain poly-Si by FE-SMC K.H. Kim, S.J. Park, A.Y. Kim and J. Jang . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Evolution of the surface roughness with the hydrogen partial pressure for high deposition rate of nanocrystalline silicon films Y. Leconte, C. Dufour, B. Garrido and R. Rizk . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Growth of microcrystalline silicon films using deuterium dilution S. Suzuki, M. Kondo and A. Matsuda . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Fast deposition of microcrystalline silicon with an expanding thermal plasma C. Smit, E.A.G. Hamers, B.A. Korevaar, R.A.C.M.M. van Swaaij and M.C.M. van de Sanden . . . . . . . . Influence of growth temperature on the microcrystallinity and native defect structure of hydrogenated amorphous silicon M. H€arting, D.T. Britton, R. Bucher, E. Minani, A. Hempel, M. Hempel, T.P. Ntsoane, C. Arendse and D. Knoesen . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Low-temperature fabrication of microcrystalline silicon and its application to solar cells M. Kondo, Y. Nasuno, H. Mase, T. Wada and A. Matsuda . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Fluorine and hydrogen effects on the growth and transport properties of microcrystalline silicon from SiF4 precursor S. Kasouit, S. Kumar, R. Vanderhaghen, P. Roca i Cabarrocas and I. French . . . . . . . . . . . . . . . . . . . . . Direct formation of crystalline silicon films on an amorphous substrate from chlorinated materials by plasmaenhanced chemical vapor deposition H. Shirai, S. Jung, Y. Fujimura and Y. Toyoshima . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Properties of Si:H thin films deposited by rf-PECVD of silane–argon mixtures with variation of the plasma condition P.P. Ray, N. Dutta Gupta, P. Chaudhuri, D.L. Williamson, S. Vignoli and C. Longeaud . . . . . . . . . . . . . Crystalline silicon films grown by pulsed dc magnetron sputtering P. Reinig, F. Fenske, W. Fuhs and B. Selle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Structural, optical and electrical properties of lc-Si:H deposited by ECR M. Mars, M. Fathallah, E. Tresso and S. Ferrero . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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Section 2. Growth of germanium and silicon–germanium alloys Pulsed laser crystallization and structuring of a-Ge on GaAs (Invited paper) P.V. Santos, A.R. Zanatta, F. Dondeo, A. Trampert, U. Jahn, D. Comedi, M.A.A. Pudenzi and I. Chambouleyron . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Microscopic mechanisms behind the Al-induced crystallization of a-Ge:H films I. Chambouleyron, F. Fajardo and A.R. Zanatta . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Growth and characterization of microcrystalline silicon–germanium films S. Miyazaki, H. Takahashi, H. Yamashita, M. Narasaki and M. Hirose . . . . . . . . . . . . . . . . . . . . . . . . . Electronic properties of microcrystalline SiGe-thin films by Hall-experiments and photo- and dark-transport G.H. Bauer, F. Voigt, R. Carius, M. Krause, R. Br€ uggemann and T. Unold . . . . . . . . . . . . . . . . . . . . . . Structural and optoelectronic properties of microcrystalline silicon germanium M. Krause, H. Stiebig, R. Carius, U. Zastrow, H. Bay and H. Wagner . . . . . . . . . . . . . . . . . . . . . . . . . . Low temperature poly-Six Ge1x deposited by reactive thermal CVD for thin film transistor application J.J. Zhang, K. Shimizu and J. Hanna . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . The effect of substrate temperature on HW-CVD deposited a-SiGe:H films S.R. Jadkar, J.V. Sali, S.T. Kshirsagar and M.G. Takwale . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

137 143 148 153 158 163 168

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Ab initio calculations of a vacancy in a Ge nano-cluster and its passivation with atomic and molecular hydrogen F.C. Gozzo, M.N. Eberlin and I. Chambouleyron . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Temperature dependence of the photoconductivity of arsenic-doped hydrogenated amorphous germanium thin films F.T. Reis and I. Chambouleyron . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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Section 3. Hydrogen in amorphous and microcrystalline silicon Fast hydrogen diffusion in hydrogenated amorphous silicon observed by in situ ESR (Invited paper) S. Yamasaki, U.K. Das and T. Yasuda . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Fermi-level dependence of the charge state of diffusing hydrogen in amorphous silicon H.M. Branz, R. Reedy, R.S. Crandall, H. Mahan, Y. Xu and B.P. Nelson . . . . . . . . . . . . . . . . . . . . . . . Etching and hydrogen diffusion mechanisms during a hydrogen plasma treatment of silicon thin films A. Fontcuberta i Morral and P. Roca i Cabarrocas . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Energetics of the forms of hydrogen and hydrogen diffusion in realistic models of a-Si:H P.A. Fedders . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Interstitial molecular hydrogen and deuterium in PECVD and HW amorphous silicon R. Borzi, P.A. Fedders, P.H. Chan, J. Herberg, D.J. Leopold and R.E. Norberg . . . . . . . . . . . . . . . . . . . Spectral dependence of vibrational lifetime of Si–H stretching band in a-Si:H H. Oheda . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . FTIR phase-modulated ellipsometry measurements of microcrystalline silicon films deposited by hot-wire CVD E. Garcia-Caurel, C. Niikura, S.Y. Kim, B. Drevillon and J.E. Bouree . . . . . . . . . . . . . . . . . . . . . . . . . . Hydrogen related bonding structure in hydrogenated polymorphous and microcrystalline silicon S. Vignoli, A. Fontcuberta i Morral, R. Butte, R. Meaudre and M. Meaudre . . . . . . . . . . . . . . . . . . . . . . Hydrogen bonding in laser-crystallized poly-Si H. Heise and N.H. Nickel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

185 191 196 201 205 210 215 220 226

Section 4. Disorder and structure Amorphous morphology, thermal stability and electronic structure of non-crystalline transition-metal elemental and binary oxides, and chalcogenides (Invited paper) G. Lucovsky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Studies of short-range ordering in amorphous In–Se films by EXAFS A. Jablonska, A. Burian, A.M. Burian, J. Szade, O. Proux, J.L. Hazemann, A. Mosset and D. Raoux . . . . Towards the chemically specific structure of amorphous materials: anomalous X-ray scattering from a molybdenum–germanium alloy H. Ishii, S. Brennan and A. Bienenstock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Positron states in hydrogenated amorphous silicon D.T. Britton, M. H€arting, A. Hempel, G. K€ ogel, P. Sperr, W. Triftsh€ auser, M. Hempel and D. Knoesen . . Helium effusion, diffusion and precipitation as a probe of microstructure in hydrogenated amorphous silicon W. Beyer and U. Zastrow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Ab initio generation of amorphous semiconducting structures. The case of a-Si F. Alvarez and A.A. Valladares . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Are the triangles and the squares possible local atomic arrangements in the structure of amorphous silicon? Z. Varallyay and S. Kugler . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . On the structure of semiconducting amorphous systems J. Barzola-Quiquia and P. H€aussler . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Relationships between structure, spin density and electronic transport in ‘solar-grade’ microcrystalline silicon films A.L. Baia Neto, A. Lambertz, R. Carius and F. Finger . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Measurement of stress gradients in hydrogenated microcrystalline silicon thin films using Raman spectroscopy V. Paillard, P. Puech and P. Roca i Cabarrocas . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Structure of plasma-deposited polymorphous silicon A. Fontcuberta i Morral, H. Hofmeister and P. Roca i Cabarrocas . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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243 249 254 259 265 269

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Optical transitions in silicon nanocrystals near structural transition region to amorphous silicon T. Toyama, Y. Nakai, A. Asano and H. Okamoto . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Modifications of the optical parameters of silicon thin films due to light scattering t’astny . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P. Sladek, P. St’ahel and J. S Universal distribution of optically excited carriers in tetrahedral amorphous semiconductors P.C. Taylor, N.A. Schultz, B. Yan and A.L. Efros . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Charge carrier photogeneration yield in amorphous materials with long-range potential fluctuations E.V. Emelianova, V.I. Arkhipov, S.O. Kasap and G.J. Adriaenssens . . . . . . . . . . . . . . . . . . . . . . . . . . . . Measurement of the thermo-optic coefficient of a-Si:H at the wavelength of 1500 nm from room temperature to 200 °C G. Cocorullo, F.G. Della Corte, L. Moretti, I. Rendina and A. Rubino . . . . . . . . . . . . . . . . . . . . . . . . . . Linear thermal expansion coefficients of amorphous and microcrystalline silicon films K. Takimoto, A. Fukuta, Y. Yamamoto, N. Yoshida, T. Itoh and S. Nonomura . . . . . . . . . . . . . . . . . . . Study of the pinhole density in a-Ge:H and a-Ge0:9 Si0:1 :H thin films A. Champi and D. Comedi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . X-ray photoelectron spectroscopy of amorphous AlN alloys prepared by reactive rf sputtering C.T.M. Ribeiro, A.R. Zanatta and F. Alvarez . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Urbach energy parameter of flash evaporated amorphous gallium arsenide films J.H. Dias da Silva and R.R. Campomanes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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310 314 318 323 328

Section 5. Electron transport Variable range hopping revisited: the case of an exponential distribution of localized states (Invited paper) C. Godet . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Photoconductivity of macroscopically inhomogeneous amorphous semiconductors: case example for a-Si:H (Invited paper) K. Shimakawa and A. Ganjoo . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Universal frequency-dependent electronic conductivity near the mobility edge H. Okamoto, T. Toyama and K. Hattori . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . An ESR study of bandtail states in phosphorus doped microcrystalline silicon K. Lips, P. Kanschat, S. Brehme and W. Fuhs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Model of transport in microcrystalline silicon vrcek, P. Fojtık, I. Pelant and A. Fejfar . . J. Kocka, H. Stuchlıkova, J. Stuchlık, B. Rezek, T. Mates, V. S Influence of combined AFM/current measurement on local electronic properties of silicon thin films ıpek, J. Stuchlık, A. Fejfar and J. Kocka . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . B. Rezek, T. Mates, E. S Electronic transport in microcrystalline silicon controlled by trapping and intra-grain mobility R. Vanderhaghen, S. Kasouit, R. Brenot, V. Chu, J.P. Conde, F. Liu, A. de Martino and P. Roca i Cabarrocas Pump–probe pulse transient photoconductivity study in amorphous and microcrystalline Si:H P. Stradins, M. Kondo and A. Matsuda . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Features of charge carrier transport determined from carrier extraction current in lc-Si:H G. Juska, K. Arlauskas, N. Nekrasas, J. Stuchlik, X. Niquille and N. Wyrsch . . . . . . . . . . . . . . . . . . . . . Barrier-limited carrier transport in highly n-doped lc-Si:H thin films T. Weis, S. Brehme, P. Kanschat, W. Fuhs, R. Lipperheide and U. Wille . . . . . . . . . . . . . . . . . . . . . . . . Transport mechanism of microcrystalline silicon thin films F. Liu, M. Zhu, Y. Feng, Y. Han, J. Liu, S. Kasouit and R. Vanderhaghen . . . . . . . . . . . . . . . . . . . . . . Effect of the microstructure on the electronic transport in hydrogenated microcrystalline silicon N. Wyrsch, C. Droz, L. Feitknecht, P. Torres, E. Vallat-Sauvain, J. Bailat and A. Shah . . . . . . . . . . . . . . Importance of the transport isotropy in lc-Si:H thin films for solar cells deposited at low substrate temperatures vrcek, A. Fejfar, P. Fojtık, T. Mates, A. Poruba, H. Stuchlıkov V. S a, I. Pelant, J. Kocka, Y. Nasuno, M. Kondo and A. Matsuda . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by hot-wire CVD J. Puigdollers, C. Voz, A. Orpella, I. Martın, D. Soler, M. Fonrodona, J. Bertomeu, J. Andreu and R. Alcubilla . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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Modification of the tunneling barrier in a nanocrystalline silicon single-electron transistor T. Kamiya, Y.T. Tan, Z.A.K. Durrani and H. Ahmed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Investigations of the electron transport behavior in microcrystalline Si films S.K. Ram, S. Kumar, R. Vanderhaghen and P. Roca i Cabarrocas . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electronic transport in disordered organic and inorganic semiconductors S.D. Baranovskii, I.P. Zvyagin, H. Cordes, S. Yamasaki and P. Thomas . . . . . . . . . . . . . . . . . . . . . . . . . Time-of-flight photocurrents in expanding-thermal-plasma-deposited a-Si:H M. Brinza, G.J. Adriaenssens, K. Iakoubovskii, A. Stesmans, W.M.M. Kessels, A.H.M. Smets and M.C.M. van de Sanden . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Conductance fluctuations in undoped hydrogenated amorphous silicon–germanium alloy thin films M. G€ unes, R.E. Johanson, S.O. Kasap, J.C. Yang and S. Guha . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Origin of lateral photovoltage in hydrogenated amorphous silicon and silicon germanium thin films A. Srivastava, P. Agarwal and S.C. Agarwal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electronic transport in low-temperature silicon nitride P. Alpuim, P. Ferreira, V. Chu and J.P. Conde . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Simulation of transient transport in amorphous multilayers A. Picos-Vega and R. Ramırez-Bon . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Effective mass of charge carriers in amorphous semiconductors and its applications J. Singh . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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405 411 416

420 425 430 434 439 444

Section 6. Light-induced metastability Insights into the mechanisms of light-induced degradation from studies of defects in low Ge fraction a-Si,Ge:H alloys J.D. Cohen, J. Heath, K. Palinginis, J.C. Yang and S. Guha . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Light-induced defect creation under intense optical excitation in hydrogenated amorphous silicon K. Morigaki and H. Hikita . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Less-understood phenomena in the light-induced degradation and photocarrier capture in a-Si:H P. Stradins, S. Shimizu, M. Kondo and A. Matsuda . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Photocarrier capture properties in a-Si:H S. Shimizu, P. Stradins, M. Kondo and A. Matsuda . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Light-soaking and annealing kinetics of majority and minority carrier mobility–lifetime products in a-Si:H E. Morgado . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Metastability in tritiated amorphous silicon S. Zukotynski, F. Gaspari, N. Kherani, T. Kosteski, K. Law, W.T. Shmayda and C.M. Tan . . . . . . . . . . . Evolution with light-soaking of polymorphous material prepared at 423 K D. Roy, C. Longeaud, O. Saadane, M.E. Gueunier, S. Vignoli, R. Butte, R. Meaudre and M. Meaudre . . . Light-induced effects in hydrogenated amorphous silicon films grown from high hydrogen dilution of silane J.-H. Yoon and K.-T. Lee . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Defect creation kinetics in amorphous silicon thin film transistors R.B. Wehrspohn, S.C. Deane and M.J. Powell . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Study of the stability of polycrystalline silicon by means of the behavior of thin film transistors under gate bias stress T. Mohammed-Brahim, A. Rahal, G. Gautier, F. Raoult, H. Toutah, B. Tala-Ighil and J.F. Llibre . . . . . . Metastable defect kinetics in microcrystalline silicon N.H. Nickel and M. Rakel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Defect kinetics in new model of metastability in a-Si:H R. Biswas and B.C. Pan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Influence of light-soaking and annealing on the microstructure of a-Si:H deposited at 423 K D. Roy, C. Longeaud and O. Saadane . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Photoinduced volume expansion and contraction in a-Si:H films N. Yoshida, Y. Sobajima, H. Kamiguchi, T. Iida, T. Hatano, H. Mori, Y. Nakae, M. Itoh, A. Masuda, H. Matsumura and S. Nonomura . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

449 455 460 466 471 476 482 487 492

497 502 507 511

516

xii

Contents

Light induced stress in a-Si1x Gex :H alloys and its correlation with the Staebler–Wronski effect E. Spanakis, E. Stratakis, P. Tzanetakis, H. Fritzsche, S. Guha and J. Yang . . . . . . . . . . . . . . . . . . . . . .

521

Section 7. Defects, dopants and impurities Interpretation of photocurrent transients in amorphous semiconductors (Invited paper) C. Main . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Phototransport spectroscopy of a-Si:H and lc-Si:H I. Balberg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Fourier transform infrared photocurrent spectroscopy in microcrystalline silicon A. Poruba, M. Vanecek, J. Meier and A. Shah . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Probing localized states distributions in semiconductors by Laplace transform transient photocurrent spectroscopy M.J. Gueorguieva, C. Main, S. Reynolds, R. Br€ uggemann and C. Longeaud . . . . . . . . . . . . . . . . . . . . . . Tunneling-assisted thermalization and recombination of photocarriers in a-Si:H K. Hattori, Y. Musa and H. Okamoto . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Comparison of transport and defects properties in hydrogenated polymorphous and amorphous silicon W. Bronner, J.P. Kleider, R. Br€ uggemann, P. Roca i Cabarrocas, D. Mencaraglia and M. Mehring . . . . . . Nature of metastable and stable dangling bond defects in hydrogenated amorphous silicon M.J. Powell, R.B. Wehrspohn and S.C. Deane . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Anisotropic magnetic centres in hydrogenated microcrystalline and polymorphous silicon K. Morigaki, C. Niikura, J.E. Bouree and B. Equer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Time-domain measurement of spin-dependent recombination in microcrystalline silicon C. Boehme, P. Kanschat and K. Lips . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Recombination mechanism of excess carriers in hydrogenated amorphous germanium F.C. Marques, M.M. de Lima Jr. and P.C. Taylor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . In situ ESR observation of interface dangling bond formation processes during amorphous SiO2 growth on Si W. Futako, T. Umeda, M. Nishizawa, T. Yasuda, J. Isoya and S. Yamasaki . . . . . . . . . . . . . . . . . . . . . . Dependence of the doping efficiency on material composition in n-type a-SiOx :H A. Janotta, R. Janssen, M. Schmidt, T. Graf, L. G€ orgens, C. Hammerl, S. Schreiber, G. Dollinger, A. Bergmaier, B. Stritzker and M. Stutzmann . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Measurement of band tail widths in hydrogenated amorphous silicon K. Rerbal, J.-N. Chazalviel, F. Ozanam and I. Solomon . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . NMR probe of band tail states in a-Si:H T. Su, R. Plachy, P.C. Taylor and P. Hari . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . The influence of defects on response speed of high gain two-beam photogating in a-Si:H PIN structures J.-H. Zollondz, S. Reynolds, C. Main, V. Smirnov and I. Zrinscak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse bias annealing of Schottky diodes: evidence for the lower defect density and better stability of polymorphous silicon compared to amorphous silicon J.P. Kleider and P. Roca i Cabarrocas . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . On the doping mechanism of boron-doped hydrogenated amorphous silicon deposited by rf-co-sputtering M.M. de Lima Jr. and F.C. Marques . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Bulk and surface defects in a-Si:H films studied by means of the cavity ring down absorption technique A.H.M. Smets, J.H. van Helden and M.C.M. van de Sanden . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Defect-related absorption in hydrogenated silicon films T. Globus, P. Roca i Cabarrocas and B. Gelmont . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Defect transition energies and the density of electronic states in hydrogenated amorphous silicon G. Mensing, J. Gilligan, P. Hari, E. Hurt, G. L€ upke, S. Pantelides, N. Tolk and P.C. Taylor . . . . . . . . . . Density of states in hydrogenated microcrystalline silicon determined by space charge limited currents M. Meaudre, R. Meaudre, S. Vignoli and O. Marty . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Influence of electron and proton irradiation on the electronic properties of microcrystalline silicon R. Br€ uggemann, J.P. Kleider, W. Bronner and I. Zrinscak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

525 531 536

541 546 551 556 561 566 571 575

579 585 589 594

599 605 610 615 621 626 632

Contents

xiii

Section 8. Photoluminescence and recombination Lifetime and intensity of photoluminescence after light induced creation of dangling bonds in a-Si:H C. Ogihara, H. Takemura, T. Yoshimura and K. Morigaki . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Photoluminescence lifetime distribution of a-Si:H and a-Ge:H expanded to nanosecond region using wide-band frequency-resolved spectroscopy T. Aoki, S. Komedoori, S. Kobayashi, C. Fujihashi, A. Ganjoo and K. Shimakawa . . . . . . . . . . . . . . . . . Blue light emission in nc-Si/SiO2 multilayers fabricated using layer by layer plasma oxidation Z. Ma, L. Wang, K. Chen, W. Li, L. Zhang, Y. Bao, X. Wang, J. Xu, X. Huang and D. Feng . . . . . . . . . Luminescence properties of amorphous silicon-nitride-based optical microcavities F. Giorgis, V. Ballarini, S. Ferrero, P. Mandracci, C. Ricciardi and C.F. Pirri . . . . . . . . . . . . . . . . . . . . . Photoluminescence in laser-crystallized polycrystalline silicon K. Brendel, N.H. Nickel, K. Lips and W. Fuhs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Interface recombination in heterojunctions of amorphous and crystalline silicon A. Froitzheim, K. Brendel, L. Elstner, W. Fuhs, K. Kliefoth and M. Schmidt . . . . . . . . . . . . . . . . . . . . .

637

642 648 653 658 663

Section 9. Luminescence and erbium doping Time-resolved photoluminescence of erbium centers in amorphous hydrogenated silicon B.V. Kamenev, V.Yu. Timoshenko, E.A. Konstantinova, V.Kh. Kudoyarova, E.I. Terukov and P.K. Kashkarov . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 668 Erbium environment in silicon nanoparticles L.R. Tessler, J.L. Coffer, J. Ji and R.A. Senter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 673 Bright luminescence from erbium doped nc-Si=SiO2 superlattices M. Schmidt, J. Heitmann, R. Scholz and M. Zacharias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 678 Optical and transport properties of magnetron-sputtered a-Si:H films doped with erbium D. Dimova-Malinovska, R. Northcott, M. Nikolaeva, M. Sendova-Vassileva, A. Janotta, M. Schmidt and J.M. Marshall . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 683 Er3þ luminescence in a-SiOx :H A. Janotta, M. Schmidt, R. Janssen, Ch. Buchal and M. Stutzmann . . . . . . . . . . . . . . . . . . . . . . . . . . . . 688 a-Si:H/a-SiOx :H microcavities with a-Si(Er):H active layer A.A. Dukin, N.A. Feoktistov, V.G. Golubev, A.V. Medvedev, A.B. Pevtsov and A.V. Sel’kin . . . . . . . . . . 694 Improvement of 1.54 lm luminescence in erbium-doped a-SiOx :H alloys E.I. Terukov, Yu.K. Undalov, V.Kh. Kudoyarova, K.V. Koughia, J.P. Kleider, M.E. Gueunier and R. Meaudre . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 699 Donor formation in plasma-deposited amorphous silicon (a-Si:H) by erbium incorporation A.G. Kazanskii, H. Mell, G. Weiser and E.I. Terukov . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 704 Blue, green and red emission from Ce3þ , Tb3þ and Eu3þ ions in amorphous GaN and AlN thin films S.B. Aldabergenova, A. Osvet, G. Frank, H.P. Strunk, P.C. Taylor and A.A. Andreev . . . . . . . . . . . . . . . 709 Author Index Parts A and B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Subject Index Parts A and B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

xxv xlv

PART B Section 10. Crystallization and annealing Effects of selective Si ion implantation on excimer laser annealing of dehydrogenated a-Si film (Invited paper) M.-C. Lee, K.-C. Park, I.-H. Song and M.-K. Han . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Excimer laser recrystallization of selectively floating a-Si thin film C.-H. Kim, I.-H. Song, W.-J. Nam and M.-K. Han . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Properties of grain boundaries in laser-crystallized silicon thin films C. Eisele, T. Bach, C.E. Nebel and M. Stutzmann . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

715 721 726

xiv

Contents

Pulsed laser crystallization of amorphous silicon for polysilicon flat panel imagers J.B. Boyce, J.P. Lu, J. Ho, R.A. Street, K. van Schuylenbergh and Y. Wang . . . . . . . . . . . . . . . . . . . . . . Comparison between the crystallization processes by laser and furnace annealing of pure and doped a-Si:H R. Beserman, Yu.L. Khait, A. Chack, R. Weil and W. Beyer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Aluminum-induced crystallization of amorphous silicon S. Gall, M. Muske, I. Sieber, O. Nast and W. Fuhs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Rapid crystallization of silicon films using pulsed current-induced joule heating T. Sameshima, Y. Kaneko and N. Andoh . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . The effect of post-treatments on crystallization in a-Si:H=a-SiNx :H multilayers L. Wang, X. Wang, X. Huang, Z. Ma, Y. Bao, J. Shi, W. Li, J. Xu and K. Chen . . . . . . . . . . . . . . . . . . Optoelectronic characterization of microcrystalline silicon films M. Kunst, S. von Aichberger, G. Citarella and F. W€ unsch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Transition from amorphous to microcrystalline Si:H: effects of substrate temperature and hydrogen dilution S. Ray, S. Mukhopadhyay, T. Jana and R. Carius . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Role of grains in protocrystalline silicon layers grown at very low substrate temperatures and studied by atomic force microscopy T. Mates, A. Fejfar, I. Drbohlav, B. Rezek, P. Fojtık, K. Luterov a, J. Kocka, C. Koch, M.B. Schubert, M. Ito, K. Ro and H. Uyama . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Changes in electric and optical properties of intrinsic microcrystalline silicon upon variation of the structural composition O. Vetterl, A. Groß, T. Jana, S. Ray, A. Lambertz, R. Carius and F. Finger . . . . . . . . . . . . . . . . . . . . . . Stress characterization of undoped and doped laser crystallized poly-Si on different substrates using Raman spectroscopy P. Lengsfeld and N.H. Nickel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Defect formation and crystallization in a-Si:H induced by Siþ implantation O.A. Golikova, E.V. Bogdanova, A.N. Kuznetsov, E.P. Domashevskaya, V.A. Terekhov, N.R. Rahimov and Kh.Yu. Mavlyanov . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Crystallization of amorphous GaAs films prepared onto different substrates R.R. Campomanes, J.H. Dias da Silva, J. Vilcarromero and L.P. Cardoso . . . . . . . . . . . . . . . . . . . . . . . . Novel amorphization process in silicon induced by electron irradiation J. Yamasaki, Y. Ohno, H. Kohno, N. Ozaki and S. Takeda . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

731 736 741 746 751 756 761

767

772

778

783 788 793

Section 11. Non-crystalline carbon Properties and prospects for non-crystalline carbons (Invited paper) J. Robertson . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EXAFS study of noble gases implanted in highly stressed amorphous carbon films R.G. Lacerda, L.R. Tessler, M.C. dos Santos, P. Hammer, F. Alvarez and F.C. Marques . . . . . . . . . . . . . X-ray and HRTEM structural studies of bulk nanoporous carbon materials produced from carbides E. Smorgonskaya, R. Kyutt, A. Danishevskii, C. Jardin, R. Meaudre, O. Marty, S. Gordeev and A. Grechinskaya . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Study of the lithium diffusion in nanoporous carbon materials produced from carbides I.M. Kotina, V.M. Lebedev, A.G. Ilves, G.V. Patsekina, L.M. Tuhkonen, S.K. Gordeev, M.A. Yagovkina and T. Ekstr€ om . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . The phase composition of the lithiated samples of nanoporous carbon materials produced from carbides I.M. Kotina, V.M. Lebedev, A.G. Ilves, G.V. Patsekina, L.M. Tuhkonen, S.K. Gordeev, M.A. Yagovkina and T. Ekstr€ om . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Time development during growth and relaxation of amorphous carbon films. Tight-binding molecular dynamics study K. Kohary and S. Kugler . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . New preparation method of diamond like carbon – the layer-by-layer method T. Katsuno, S. Nitta and K. Ueda . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Some properties of sputtered a-C:H G. Lazar, I. Vascan, I. Lazar and M. Stamate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

798 805

810

815

820

824 830 835

Contents

Low-temperature investigation of paramagnetic centres in tetrahedral amorphous carbon deposited by S-bend FCVA G. Fanchini, A. Tagliaferro, D. Dasgupta, E. Laurenti, A.C. Ferrari, K.B.K. Teo, W.I. Milne and J. Robertson . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Paramagnetic properties and hydrogen-related structural relaxation effects in magnetron-sputtered a-C:H thin films G. Fanchini, A. Tagliaferro, B. Popescu and E.A. Davis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Composite character of the photoluminescence in hydrogenated amorphous carbon films M. Ko os, M. F€ ule, M. Veres, S. T oth and I. P ocsik . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Density of states and r–p mixing in hydrogenated amorphous carbon films G. Fanchini, V. Paret, A. Tagliaferro and M.-L. Theye . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High stability of emission current for a new carbon nanostructure film S.H. Lim, H.S. Kim, C.H. Lee, S.M. Pietruszko and J. Jang . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Carbon nanotubes and a-C films simultaneously fabricated by thermal CVD H. Yokomichi, F. Sakai, M. Ichihara and N. Kishimoto . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Incorporation of nitrogen in carbon nanotubes R. Droppa Jr., P. Hammer, A.C.M. Carvalho, M.C. dos Santos and F. Alvarez . . . . . . . . . . . . . . . . . . .

xv

840 846 852 858 864 868 874

Section 12. Amorphous carbon alloys Influence of different carbon source gases on preparation and properties of a-Si1X CX :H alloy films including lc-Si:H by hot-wire CVD T. Itoh, T. Fujiwara, Y. Katoh, K. Fukunaga and S. Nonomura . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Microstructural characterization of hard hydrogenated amorphous silicon–carbon alloys S.S. Camargo Jr. and W. Beyer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Structural characterization of a-Si:C:H alloys prepared by dc sputtering R. Saleh, L. Munisa and W. Beyer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Phase-pure a-SiC:H films prepared by closed chamber CVD S. Koynov, M. Tzolov and R. Schwarz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reversible effects in IR absorption peaks of SiC:H, measured as a function of the temperature R. Murri, N. Pinto, G. Ambrosone, U. Coscia and P. Musto . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electronic properties of amorphous carbon nitride a-C1x Nx :H films investigated using vibrational and ESR characterisations M. Lacerda, M. Lejeune, B.J. Jones, R.C. Barklie, R. Bouzerar, K. Zellama, N.M.J. Conway and C. Godet Experimental study of surface electronic properties of ECR-PECVD deposited a-C1x Nx :H films using UPS, XPS and spectroscopic ellipsometry M. Kildemo, M. Lacerda, D. Ballutaud, C. Godet and S. Raaen . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

880 885 891 896 902

907

912

Section 13. Chalcogenides Transient photodarkening in amorphous chalcogenides (Invited paper) A. Ganjoo, K. Shimakawa, K. Kitano and E.A. Davis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Relaxation of photodarkening in amorphous As–Se films doped with metals M.S. Iovu, S.D. Shutov and M. Popescu . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Anisotropic structural change induced by sub-bandgap light in As–S glasses studied by quasi-elastic light scattering K. Matsuishi, K.-i. Kagota and S. Onari . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . The temperature dependence of photoinduced fluidity in chalcogenide glasses: a Raman spectroscopic study D.Th. Kastrissios and S.N. Yannopoulos . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Formation of a transient disordered state under bias illumination in a-As2 Se3 P. Kounavis and E. Mytilineou . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Photoinduced anisotropy of photoconductivity in chalcogenide amorphous films V. Lyubin, M. Klebanov and V.K. Tikhomirov . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thickness effect of the photodarkening in amorphous chalcogenide films K. Hayashi and N. Mitsuishi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

917 924

929 935 940 945 949

xvi

Contents

XPS studies of Cu incorporation in arsenic chalcogenides A.G.-d. La Rocque, E. Belin-Ferre, M.-F. Fontaine and G.J. Adriaenssens . . . . . . . . . . . . . . . . . . . . . . . Nuclear quadrupole resonance study of the glassy Asx Se1x system E. Ahn, G.A. Williams, P.C. Taylor, D.G. Georgiev, P. Boolchand, B.E. Schwickert and R.L. Cappelletti . Evidence of nanophase separation in Ge–Se glasses Y. Wang, K. Tanaka, T. Nakaoka and K. Murase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Nanoscale electrical phase-change in GeSb2 Te4 films with scanning probe microscopes T. Gotoh, K. Sugawara and K. Tanaka . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Low frequency Raman scattering of amorphous Ge1x Sx ð0 6 x 6 0:62Þ H. Ogura, K. Matsuishi and S. Onari . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Amorphous As–S–Se semiconductor resists for holography and lithography J. Teteris . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Chalcogenide-glass microlenses for optical fibers A. Saitoh, T. Gotoh and K. Tanaka . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Progress in the science and technology of direct conversion a-Se X-ray sensors S.O. Kasap, J. Rowlands, B. Fogal, M.Z. Kabir, G. Belev, N. Sidhu, B. Polischuk and R.E. Johanson . . . X-ray induced effects in stabilized a-Se X-ray photoconductors B. Fogal, R.E. Johanson, G. Belev, S. O’Leary and S.O. Kasap . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Properties of a-Sbx Se1x photoconductors D. Tonchev, B. Fogal, G. Belev, R.E. Johanson and S.O. Kasap . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Dynamics of photo-transport in a-As2 Se3 : ac loss approach K. Shimakawa, A. Ganjoo and N. Hishikawa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Effect of Sn doping on photoconductivity in amorphous As2 Se3 and AsSe films M.S. Iovu, S.D. Shutov, V.I. Arkhipov and G.J. Adriaenssens . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thin amorphous chalcogenide films prepared by pulsed laser deposition P. Nemec, M. Frumar, J. Jedelsky, M. Jelınek, J. Lancok and I. Gregora . . . . . . . . . . . . . . . . . . . . . . . . Synthesis and properties of Pr3þ -doped Ge–Ga–Se glasses P. Nemec and M. Frumar . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Silver incorporation in Ge–Se glasses used in programmable metallization cell devices M. Mitkova and M.N. Kozicki . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . The study of photo- and thermally-induced diffusion and dissolution of Ag in As30 S70 amorphous films and its reaction products T. Wagner, A. Mackova, V. Perina, E. Rauhala, A. Sepp€ al€ a, S.O. Kasap, M. Frumar, Mir. Vlcek and Mil. Vlcek

953 958 963 968 973 978 983 988 993 998 1002 1008 1013 1018 1023

1028

Section 14. Organic semiconductors and thin films From one-dimensional organosilicon structures to polymeric semiconductors: optical and electrical (Invited paper) S. Nesp urek . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Polycrystalline pentacene thin films for large area electronic applications D. Knipp, R.A. Street, B. Krusor, R. Apte and J. Ho . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Equilibrium carrier mobility in disordered organic semiconductors V.I. Arkhipov, E.V. Emelianova, G.J. Adriaenssens and H. B€ assler . . . . . . . . . . . . . . . . . . . . . Time-resolved photoluminescence study of organic polysilane–silica hybrid thin films A. Kobayashi, H. Naito, Y. Matsuura, K. Matsukawa, S. Nihonyanagi and Y. Kanemitsu . . . . Optical properties of new aliphatic–aromatic co-polyimides B. Jarza˛bek, E. Schab-Balcerzak, T. Chamenko, D. Se˛k, J. Cisowski and A. Volozhin . . . . . . .

properties . . . . . . . . 1033 . . . . . . . . 1042 . . . . . . . . 1047 . . . . . . . . 1052 . . . . . . . . 1057

Section 15. Designed nanostructures, interfaces and heterostructures Three-dimensional ordered silicon-based nanostructures in opal matrix: preparation and photonic properties (Invited paper) V.G. Golubev, J.L. Hutchison, V.A. Kosobukin, D.A. Kurdyukov, A.V. Medvedev, A.B. Pevtsov, J. Sloan and L.M. Sorokin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1062

Contents

Fabrication of a-Si:H/nc-Si multilayer films using layer by layer technique and their properties V.P. Afanasjev, A.S. Gudovskikh, J.P. Kleider, K.V. Koughia, A.P. Sazanov, M.E. Gueunier and E.I. Terukov . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Size controlled nc-Si synthesis by SiO=SiO2 superlattices J. Heitmann, R. Scholz, M. Schmidt and M. Zacharias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Fabrication of Ge nanocrystals in SiO2 films by ion implantation: control of size and position K. Masuda, M. Yamamoto, M. Kanaya and Y. Kanemitsu . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Photoelectric properties of printed thin films of silicon nanocrystals dispersed in polymer binder M. Ando, H. Miyamoto, H. Naito and Y. Kanemitsu . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Nano-oxidation of an amorphous silicon surface with an atomic force microscope I. Umezu, T. Yoshida, K. Matsumoto, M. Inada and A. Sugimura . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Visible photoluminescence and quantum confinement effects in amorphous Si=SiO2 multilayer structures S. Nihonyanagi, K. Nishimoto and Y. Kanemitsu . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Formation of CdS nanocrystals in SiO2 by ion implantation U.V. Desnica, I.D. Desnica-Frankovic, O. Gamulin, C.W. White, E. Sonder and R.A. Zuhr . . . . . . . . . . . Quantum confinement in CdSe nanocrystallites K.E. Andersen, C.Y. Fong and W.E. Pickett . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thin-film electroluminescence device utilizing ZnS:Mn nanocrystals as emission layer T. Toyama, D. Adachi, M. Fujii, Y. Nakano and H. Okamoto . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

xvii

1070 1075 1079 1084 1090 1095 1100 1105 1111

Section 16. Solar cells Amorphous silicon solar cells deposited at high growth rate (Invited paper) T. Nishimoto, M. Takai, H. Miyahara, M. Kondo and A. Matsuda . . . . . . . . . . . . . . . . . . . . . . . . . . . . Effects of gas depletion on dc plasma deposited, a-Si single junction p–i–n solar cells with i-layers deposited /s at 10 A G. Ganguly, D.E. Carlson and R.R. Arya . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Growth and properties of low bandgap amorphous (Si,Ge) alloy materials and devices V.L. Dalal, Y. Liu, Z. Zhou and K. Han . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Improvement in the spectral response at long wavelength of a-SiGe:H solar cells by exponential band gap design of the i-layer R. Jimenez Zambrano, F.A. Rubinelli, J.K. Rath and R.E.I. Schropp . . . . . . . . . . . . . . . . . . . . . . . . . . . Mobility gap profiles in Si:H intrinsic layers prepared by H2 -dilution of SiH4 : effects on the performance of p–i–n solar cells R.J. Koval, A.S. Ferlauto, J.M. Pearce, R.W. Collins and C.R. Wronski . . . . . . . . . . . . . . . . . . . . . . . . . Collection asymmetry in a drift-driven p–i–n solar cell J.M. Asensi, D. Soler, M. Fonrodona, J. Bertomeu and J. Andreu . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Improvement of the efficiency of the silicon solar cells by silicon incorporated diamond-like carbon antireflective coatings V. Bursıkova, P. Sladek, P. St’ahel and L. Zajıckov a ....................................... Influence of substrate texture on microstructure and photovoltaic performances of thin film polycrystalline silicon solar cells T. Matsui, M. Tsukiji, H. Saika, T. Toyama and H. Okamoto . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Origins of silicon solar cell passivation by SiNx :H anneal C. Boehme and G. Lucovsky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Infrared modulation spectroscopy of interfaces in amorphous silicon solar cells K. Zhu, E.A. Schiff and G. Ganguly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Cross-section of Si:H solar cells prepared by PECVD at the edge of crystallization F. Edelman, A. Chack, P. Werner, R. Scholz, R. Weil, R. Beserman, T. Roschek, B. Rech and W. Beyer . Metastability study and optimization of polymorphous silicon solar cells: the state-of-the-art Y. Poissant, P. Chatterjee and P. Roca i Cabarrocas . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Transport properties of hot-wire CVD lc-Si:H layers for solar cells C. Niikura, Y. Poissant, M.E. Gueunier, J.P. Kleider and J.E. Bouree . . . . . . . . . . . . . . . . . . . . . . . . . . .

1116

1123 1127

1131

1136 1142

1147

1152 1157 1162 1167 1173 1179

xviii

Contents

Influence of grain environment on open circuit voltage of hot-wire chemical vapour deposited Si:H solar cells P.A.T.T. van Veenendaal, C.M.H. van der Werf, J.K. Rath and R.E.I. Schropp . . . . . . . . . . . . . . . . . . . Growth of microcrystalline nip Si solar cells: role of local epitaxy L. Houben, C. Scholten, M. Luysberg, O. Vetterl, F. Finger and R. Carius . . . . . . . . . . . . . . . . . . . . . . . a-Si:H/poly-Si tandem cells deposited by hot-wire CVD M.K. van Veen, P.A.T.T. van Veenendaal, C.H.M. van der Werf, J.K. Rath and R.E.I. Schropp . . . . . . . Amorphous silicon/crystalline silicon heterojunctions for solar cells M. Kunst, S. von Aichberger, G. Citarella and F. W€ unsch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Open circuit voltage in homojunction and heterojunction silicon solar cells grown by VHF-PECVD R. Rizzoli, E. Centurioni, J. Pla, C. Summonte, A. Migliori, A. Desalvo and F. Zignani . . . . . . . . . . . . . . Effect of rf power on the properties of ITO thin films deposited by plasma enhanced reactive thermal evaporation on unheated polymer substrates C. Nunes de Carvalho, A. Luis, O. Conde, E. Fortunato, G. Lavareda and A. Amaral . . . . . . . . . . . . . . . Study of a-SiGe:H films and n–i–p devices used in high efficiency triple junction solar cells P. Agarwal, H. Povolny, S. Han and X. Deng . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Influence of substrate on the microstructure of microcrystalline silicon layers and cells J. Bailat, E. Vallat-Sauvain, L. Feitknecht, C. Droz and A. Shah . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1184 1189 1194 1198 1203

1208 1213 1219

Section 17. Photosensors and other devices Thermal actuation of thin film microelectromechanical structures J. Gaspar, V. Chu, N. Louro, R. Cabec¸a and J.P. Conde . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Numerical and experimental study of a-Si:H based ultraviolet sensitive detectors M. Jankovec, H. Stiebig, M. Krause, J. Krc, M. Vukadinovic, F. Smole and M. Topic . . . . . . . . . . a-Si:H photodiode technology for advanced CMOS active pixel sensor imagers J.A. Theil, R. Snyder, D. Hula, K. Lindahl, H. Haddad and J. Roland . . . . . . . . . . . . . . . . . . . . . Image sensors combining an organic photoconductor with a-Si:H matrix addressing R.A. Street, J. Graham, Z.D. Popovic, A. Hor, S. Ready and J. Ho . . . . . . . . . . . . . . . . . . . . . . . Image capture devices based on p–i–n silicon carbides for biometric applications M. Vieira, M. Fernandes, P. Louro, Y. Vygranenko, A. Fantoni, R. Schwarz and M. Schubert . . . . Active pixel sensor architectures for large area medical imaging K.S. Karim, A. Nathan and J.A. Rowlands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Simulations of generation–recombination noise of n–i–n a-Si:H devices using AMPS-1D J.P.R. Bakker, B.J. van der Horst and J.I. Dijkhuis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Photocarrier response time scanner R. Schwarz, M. Fernandes, A. Fantoni, M. Vieira, P. Ferreira and P. Sanguino . . . . . . . . . . . . . . . Advances in amorphous silicon-based photonic technology C.M. Fortmann, A.H. Mahan and N. Hata . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . New insights on large area flexible position sensitive detectors  guas, V. Silva, A. Marques, L. Pereira, I. Ferreira and R. Martins . . . D. Brida, E. Fortunato, H. A Performance of a-Six :C1x :H Schottky barrier and pin diodes used as position sensitive detectors A. Cabrita, J. Figueiredo, L. Pereira, V. Silva, D. Brida, E. Fortunato and R. Martins . . . . . . . . . . 32 linear array position sensitive detector based on NIP and hetero a-Si:H microdevices  guas, F. Soares, A. Marques, I. Ferreira and E. Fortunato R. Martins, J. Figueiredo, V. Silva, H. A a-Si:H interface optimisation for thin film position sensitive detectors produced on polymeric substrates  guas, V. Silva, M.F.M. Costa, V. Teixeira and L. Pereira, D. Brida, E. Fortunato, I. Ferreira, H. A R. Martins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Examination of transient behaviour and design of dynamic SPICE model of a-Si:H PIN structure J. Krc, H. Stiebig, F. Smole and M. Topic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Low-cost chip-integrable silicon-based all-optical infrared light micromodulator F.G. Della Corte, F. Cantore, M. Iodice, I. Rendina and C. Summonte . . . . . . . . . . . . . . . . . . . . .

. . . . . 1224 . . . . . 1229 . . . . . 1234 . . . . . 1240 . . . . . 1245 . . . . . 1250 . . . . . 1256 . . . . . 1261 . . . . . 1267 . . . . . 1272 . . . . . 1277 . . . . . 1283

. . . . . 1289 . . . . . 1295 . . . . . 1300

Contents

xix

Section 18. Thin film transistors New challenges in thin film transistor (TFT) research (Invited paper) R.E.I. Schropp, B. Stannowski and J.K. Rath . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Metal-ferroelectric thin film devices  guas, I. Ferreira, V. Silva, O.A. Smirnova, M.E.V. Costa, P.M. Vilarinho, A.L. Kholkin, R. Martins, H. A E. Fortunato and J.L. Baptista . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CMOS polycrystalline silicon circuits on steel substrates M. Wu and S. Wagner . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characterization and control of defect states of polycrystalline silicon thin film transistor fabricated by laser crystallization H. Watakabe, Y. Tsunoda, N. Andoh and T. Sameshima . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Laser treatment of amorphous silicon junction field effect transistor channel D. Caputo, G. de Cesare, P. delli Veneri and M. Tucci . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Poly-Si thin film transistors fabricated by combining excimer laser annealing and metal induced lateral crystallization K.-C. Park, J.-H. Lee, I.-H. Song, S.-H. Jung and M.-K. Han . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Jet-printed fabrication of a-Si:H thin-film transistors and arrays W.S. Wong, S. Ready, R. Matusiak, S.D. White, J.-P. Lu, J. Ho and R.A. Street . . . . . . . . . . . . . . . . . . . Amorphous-silicon thin-film transistors deposited by VHF-PECVD and hot-wire CVD B. Stannowski, R.E.I. Schropp, R.B. Wehrspohn and M.J. Powell . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thin-film transistors with polymorphous silicon active layer C. Voz, J. Puigdollers, A. Orpella, R. Alcubilla, A. Fontcuberta i Morral, V. Tripathi and P. Roca i Cabarrocas . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Hydrogenated amorphous silicon thin-film transistor using APC alloy for both gate and data bus lines S.W. Lee, I.K. Woo, K.S. Cho and J. Jang . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Amorphous Si TFTs on plastically deformed spherical domes P.I. Hsu, H. Gleskova, M. Huang, Z. Suo, S. Wagner and J.C. Sturm . . . . . . . . . . . . . . . . . . . . . . . . . . . Dielectric performance of low temperature silicon nitride films in a-Si:H TFTs A. Sazonov, D. Stryahilev, A. Nathan and L.D. Bogomolova . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Design of an a-Si:H(n)/GaAs(p)/GaAs(n) high-gain heterojunction bipolar transistor with 10 GHz cut-off frequency F.G. Della Corte and F. Pezzimenti . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1304

1311 1316

1321 1326

1330 1335 1340

1345 1351 1355 1360

1365

Author Index Parts A and B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1371 Subject Index Parts A and B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1391