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Correlations between the structural and physical properties of indium tin oxide thin films and their preparation parameters
202
Thin Solid Fdms, 116(1984)202 PREPARATION AND CHARACTERIZATION
CORRELATIONS BETWEEN THE STRUCTURAL AND PHYSICAL PROPERTIES OF INDIUM TIN OXIDE THIN FILMS AND THEIR PREPARATION PARAMETERS* M. CZERMANN AND GY. V/~G0
Microelectronics Co, P.O Box 21, Budapest (Hungary) O. GESZTI AND M. MENYH,~RD
Research Institute for Techntcal Physzcs of the Hungartan Academy of Sctences, P.O. Box 76, 1325 Budapest (Hungary)
Investigations of the electrical, optical and structural properties of indium tin oxide samples prepared by reactive r.f. sputtering from an 80~In-20~oSn target are reported. The film behaviour was determined mainly by the composition of the base material and the partial pressure of reactive gases present during the deposition. Among the technical parameters, annealing after the sputtering plays an important role. To chgracterize the optical properties the transmission was measured in the visible light range. The composition and structure of films were analysed by Auger electron spectroscopy and transmission electron microscopy, while the electrical properties were investigated by in situ resistivity measurements.
* Abstract of a paper presented at the Second International Summer School on Thin Film Formation, Hajddszoboszl6, Hungary, September 18-24, 1983. 0040-6090/84/$3.00
© Elsevier Sequoia/Printed in The Netherlands
Thin Solid Fdms, 116(1984)202 PREPARATION AND CHARACTERIZATION
CORRELATIONS BETWEEN THE STRUCTURAL AND PHYSICAL PROPERTIES OF INDIUM TIN OXIDE THIN FILMS AND THEIR PREPARATION PARAMETERS* M. CZERMANN AND GY. V/~G0
Microelectronics Co, P.O Box 21, Budapest (Hungary) O. GESZTI AND M. MENYH,~RD
Research Institute for Techntcal Physzcs of the Hungartan Academy of Sctences, P.O. Box 76, 1325 Budapest (Hungary)
Investigations of the electrical, optical and structural properties of indium tin oxide samples prepared by reactive r.f. sputtering from an 80~In-20~oSn target are reported. The film behaviour was determined mainly by the composition of the base material and the partial pressure of reactive gases present during the deposition. Among the technical parameters, annealing after the sputtering plays an important role. To chgracterize the optical properties the transmission was measured in the visible light range. The composition and structure of films were analysed by Auger electron spectroscopy and transmission electron microscopy, while the electrical properties were investigated by in situ resistivity measurements.
* Abstract of a paper presented at the Second International Summer School on Thin Film Formation, Hajddszoboszl6, Hungary, September 18-24, 1983. 0040-6090/84/$3.00
© Elsevier Sequoia/Printed in The Netherlands