LETTERS
TO
THE
1399
EDITOR
The significance of this picture is not only that it shows the shortest period ever resolved for alloys with “long period stacking order”, but that the stripe patterns can be observed in martensites containing high densities of imperfections. It thus definitely proves the view that the long period stacking order which appears in martensites of non-ferrous alloys is that of a genuine c~stallographic nature and not that caused by a quasi-periodic assembly of ordinary stacking faults. The authors would like to thank L. Cicotte for preparing the alloys and R. Benoit and J. Sprys for their assistance in the electron microscopy.
about 35” of (001) planes responded to etch pitting by this reagent. Etch pits were symmetrical on (001) planes and became asymmetric as the etching plane varied from (001). All observations in this study refer to {OOl) type planes. The etch pit density as a function of strain at 295°K is shown in Fig. 1. Figure 2 illustrates the appearance of the etched surfaces at different strain levels. The dislocation density after varying amounts of strain at 295°K as measured in the electron microscope from thin films of the specimens is shown in Fig. 3. Figure 4 illustrates typical dislocation structures. The dislocation density was determined by counting the number of dislocation intersections with the foil ~c~e~t~~c~oruto~ R. S. TOTH surface, i.e. counting the number of dislocation “ends”. Ford Motor Co. H. SATO Since it was not always possible to distinguish interDearborn, Michiyan 48121 sections with each surface, the total number of “ends” was counted and this number divided by two to yield References 1. For the definitionof terms deding with stackingvariants, the dislocation density. Dislocation densities measured refer to anv of the arevious publications of the 1 uresent by this technique are directly comparable to measureauthors which appearbelow. * 2. R. S. TOTH and H. SATO, Structure of martensites in p ments by the etch pit technique. The more general Au-Cd alloys, to be published. method of measuring dislocation densities in thin 3. IX. SATO, R. S. TOTR and G. HONJO, Remarks on the structure of martensites in &-Al allovs. Acta Met.. 15. 1381 films is to determine the total dislocation line length (1967). [Preceding paper.] in a unit volume of the material. The dislocation 4. P. R. SWANN and H. WARLIMONT,Acta Met. 11,511(1963). 5. Z. NISHIYAMA and S. KAJIWARA, Jcq. J&. oppl. Php. 2, density measured by the surface intersection technique 475 (1963). is approximately one-half the density measured by the 6. M. WILKENS and H. WARLIDPONT. Acta Met. 11.1099 (1963) and H. WARLIMQNTand M. W&KENS, 2. Me&k. Sb,38i line length technique.(5*6) (1964); 56, 850 (1965). The results show that the dislocation multiplication 7. Il. SATO, R. S. TOTR and G. HONJO,J. Phys. Chem. Xolids, 28, 137 (1967). rate determined by the two methods, as well as the 8. R. S. TOTH end Il. SATO, A&. Phys. Lett. 9, 101 (1966). actual dislocation density as a function of strain at 9. H. SATOand R. 8. TOTH, J. a&. P&s. 21,3367 (1966). 295”K, depends on the technique used (see Figs. 1 * Received Januery 20, 1967. and 3). It should also be noted that different etch pit solutions can give different results.(r) In the present work the dislocation density N as measured by etch Dislocation densities in tungsten* pits is approximately linearly dependent on strain E (Fig. 1) and the multiplication rate 8N/& w 5 x lO8/ As part of an investigation of the deformation and unit strain. From thin films, the dislocation density fracture of tungsten single crystals, dislocation is a linear function of strain up to a strain of about densities have been measured by both etch pitting 7% (Fig. 3), and in this region aN/& M 2.5 x lO’i/ and electron microscopy. The inter-relation between the two different measurements has recently been a unit strain. The dislocation densities determined by the two methods differ by more than two orders of matter for discussion.(1*2) Sheet tensile specimens of orientation [OlO] were magnitude. Thus, the dislocation density for the low strain values can be expressed as: prepared with the surface parallel to an {OOl) plane. After electropolishing in a 2% NaOH solution at an applied voltage of 10 V, the specimens were deformed N =N 0 E a/ 2 various amounts at 295°K. A solution of CuSO, in ammonia@**) was used for theetch pitting experiments. where No and N, are the dislocation densities at zero Etching was always carried out on a freshly eIe&rostrain and a strain e respectively. A direct relation polished surface. Thin films were produced by between the dislocation density measured by electron electropolishing and examined in a 100 kV AEI EM6 microscopy N,, and by etch pits N,, can be derived electron microsoope . using this equation and yields: A preliminary experiment contirmed the result of Wolff@) a,nd Sohadler(4) that only planes within N,, = (5 x lo2 N,,) + (1.5 x IO*) 1
”
6
+az
1400
ACTA
METALLURGICA,
m f
a
VOL.
15,
1967
5
RASTIC STRAIN ‘
%.
G-J
(b)
FIG. 4. Electron micrographs of the dislocation structure at strains of (a) 1.9% (b) 6.5% (c) 16%. Plane of foil (001).
(4
FIU. 3. The dislocation density 8s measured by trctnsmission electron microscopy a65k3function of strain at 295°K.
0
.
.
x 60,000
ACTA
1402
Consequently, the
provided
dislocation
deformed
METALLURGICA,
only low strains are involved,
density
for [OlO] tungsten
from
the etch pit density on (001) faces. These results support
the contention
determine
the
significant
error
dislocation
dislocation
properties.
if the dislocation microscopy allow
It is interesting
densities)
change of resistivity resistivity about
data
by electron
are used to calculate
of Shukovsky
0.75 x lo-l2 @&cm3
of
to note that by 2 to
of describing
with dislocation
a
values
in the present work (multiplied methods
to
can produce
absolute
densities as determined
for the different
location
density
in determining
dis-
the rate of
density from the the value
et d.(l)
differs
from
that
are grateful
work
Materials Division, through (O.A.R.),
has
been
Laboratory, A.F.S.C.,
supported Research
under
the European
by and
contract
Air
Since it was considered to be unusual that
the gold and silver films had such different deformation characters, vacuum
careful tensile tests were undertaken
deposited
the previous
single crystal
results,
show orientation silver films.
characters
for
Force
Technology Research,
United States Air Force.
References B. SHUKOVSEY, R. M. ROSE and J. WULFF, Acta Met. 14, 821(1966); ibid. 15, 391 (1967). A. S. WRONSKI and A. A. JOHNSON, Acla Met. 15,389 (1967). U. E. WOLFF, Acta Met. 6, 559 (1958). H. W. SOHADLER, ONR Contract Report No. Nom--2614(00) (April 1962). J. D. LIVINGSTON, Acta Met. 10, 229 (1962). P. B. HIRSCH. A. HOWIE, R. B. NICHOLSON. D. W. PASHLEY and M. J. W&ELAN, Elekm Microscopy df Thin Cy&zl~, p. 422. Butterworths (1965). Z. S. BASINSKI, J. S. DUGDALE and A. HOWIE, Phil. Mag. 8, 1989 (1963).
* t $ P.O.
Received February 24, 1967. Now at: Stuttgart, Germany. Now at: Ford Motor Company, 20000 Box 2053, Dearborn, Michigan, U.S.A.
Rotunda
films, (001) and
while
Drive,
2,~.
the (111)
(iii),on
mica-silver
deposition,
the substrates
evaporation
(Iii)
of gold
films, their
the deposited
being
During
the
By chemical
microanalysis
analysis
the purity of
films were found to be 99.7 wt. % and
impurities
to be zinc and silicon.
was measured
in the
contained twins.
The film
with a multiple-beam
examinations
ferometer. produced films had a well developed texture
surface
were kept at 300°C in a
of 2 x low5 mm Hg.
vacuum
major
The (001) films, their
substrates.(2)
and electron probe X-ray
thickness
1.H.
7.
below together with
by vacuum
of about
to
of
BARBARA WARLIMONT-MEIER~ P. BEARDMORES D. HULL Deportment of Metallurgy University of Livercpool
5. 6.
films were found
observed.
Two kinds of single crystal films, were prepared
for
Unlike
similar to that of the
These are described
other deformation
X-ray
2. 3. 4.
the gold
dependence
gold films.
to a thickness
AF 61(052)-689
Office of Aerospace
single
surface being (OOl), were formed on cleaved rock salt
assistance with the electron microscopy. This
On the
deposited
crystal silver films of O.P8 ,u in thickness showed a clear orientation dependence in their stress-strain
surfaces,
to Mr. D. C. Wynne
has not been found.
of
Baskinski et ~1.“) by a factor of only 2.5. The authors
properties
other hand, tensile tests of vacuum
curves.(7)
of Wronski
and Johnson(2) that the use of etch pit techniques
1967
15,
mechanical
crystals
in tension at 295°K can be determined
VOL.
as-deposited
showed
inter-
that
the
single crystalline
state,
although
they
The amount of twins was reduced by
annealing at about 1000°C for 2 hr in nitrogen stream and,
sometimes,
the films became
free from
twins.
Therefore,
such twin free films were used as tensile
specimens
for the annealed
done in several directions size of 0.3-1.5 length
by
Tensile tests were
mm wide and of 24
using
previously.“)
films.
with specimens having the
the
same
In this device,
and the corresponding
mm long in gauge
testing
device
as used
the load was prescribed
strain
measured.
For
each
kind of film, several sheets were prepared by separate evaporations tensile
and six tensile specimens
direction)
(two for one
were cut out of each sheet.
The
films prepared separately were found to give systematically different stress-strain curves. Therefore, deformation characters were compared among stressstrain curves in various tensile directions for the specimens subjected
cut out
of the same
to simultaneous
sheet
of film
and
annealing.
Several researches have been carried out on the mechanical properties of vacuum deposited single
Figure 1 reproduces, as an example, stress-strain curves for an as-deposited (001) film of 1.77 ,u thick elongated along [llO], [210] and [loo] directions, which are denoted in the figure by A, B and C, respectively. The subscripts 1 and 2 attached to
crystal 10 I
the letters refer to two different tests. For most of the specimen films tested, the tensile strength and the
Orientation dependence of stress-strain curves in vacuum deposited single crystal gold films*
gold films in a thickness range from 0.1 to but the orientation dependence of their