Dissociation ionization of CO by ion impact

Dissociation ionization of CO by ion impact

Classified Abstracts 1187--1198 493 Materials and Techniques used in Vacuum Technology 40. Gases and Vapours 40 1187. On the vapor-liquid equilibr...

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Classified Abstracts 1187--1198

493

Materials and Techniques used in Vacuum Technology 40.

Gases and Vapours

40 1187. On the vapor-liquid equilibrium for the helium-hydrogen system. (U.S.A.) C. A. Eckert and J. M. Prausnitz, J. Chem. Phys., 39 (1), 1 July 1963, 246-247. 40 1188. Dissociation ionization of CO by ion impact. (U.S.A.) C. F. Giese and W. B. Maier II, J. Chem. Phys., 39 (1), 1 July 1963, 197-200. 40 1189. On the optimum use of ionization. Efficiency data. (U.S.A.) J. D. Morrison, J. Chem. Phys., 39 (1), 1 July 1963, 200-207. 40 1190. Thermodynamic properties of a monatomic hydrogen gas at high temperatures. (U.S.A.) I. Oppenheim and D. R. Hafemann, J. Chem. Phys., 39 (1), 1 July 1963, 101-109. 40 1191. Equilibrium composition of sulfur vapor. (U.S.A.) J. R. Marquart, J. Chem. Phys., 39 (2), 15 July 1963, 275-283.

41.

41 : 30 : 19 Preparation and optical properties of thin layers of gallium arsenide and cadmium telluride. See Abstr. No. 1176.

45.

41 : 19 : 30 Ellipsometric investigations of oxide films on GaAs. See Abstr. No. 1118. 4 1 : 1 9 : 30 Relation between the optical absorption spectrum of silver film and its film structure. See Abstr. No. 1119. 41 : 19 : 30 Optical properties of thin palladium film. See Abstr. No. 1120. 41 : 19 : 30 Optical Faraday effect in ferrite films. See Abstr. No. 1122. Tantalum high resistance film produced by sputtering. No. 1155.

41 : 30 See Abstr.

41 : 30 See Abstr. No.

Diffusion of light by thin layers of granulated silver. No. 1160. Study of the recrystallization of thin layers of gold. No. 1161.

Soldering, Welding, Brazing,

47. Outgassing Data, Vapour Pressure Data, Gettering Data, Residual Gases in Vacuum Systems, Residual Gas Analysis 47:41 1192. Gas sorption properties of barium getters for T.V. picture tubes. (Japan) H. Kuroda, et al., N.E.C. Research & Devel., April 1963, 6-64.

Miscellaneous Materials and Techniques

49 1193. Dissociation energies of some metal sufides. (U.S.A.) J. R. Marquart and J. Berkowitz, J. Chem. Phys., 39 (2), 15 July 1963, 283-285. 49 1194. Gaseous metaborates. I. Mass-spectrometric study of the vaporization of lithium and sodium metaborates. (U.S.A.) A. Biichler and J. B. Berowitz-Mattuck, J. Chem. Phys., 39 (2), 15 July 1963, 286-291. 49 1195. Thermodynamics of vaporization of lithium oxide, boric oxide and lithium metaborate. (U.S.A.) D. L. Hildenbrand, et al., J. Chem. Phys., 39 (2), 15 July 1963, 296-301. 49 1196. Work function change on mololayer adsorption. (U.S.A.) J. R. Macdonald and C. A. Barlow, Jr., 3. Chem. Phys., 39 (2), 15 July 1963, 412-422.

41 : 30 : 19 See Abstr.

49 1197. Vapor-phase equilibrium of

41 : 30 See Abstr.

41:40 Epitaxial growth of gold on mica in an ultra-high vacuum. See Abstr. No. 1162. 41 : 47 Gas sorption properties of barium getters for T.V. picture tubes. See Abstr. No. 1192. 41 : 30 : 19 Some observations on the evaporating properties of two component alloys. See Abstr. No. 1171.

Solders

45 : 10 Ultra-high vacuum and high temperature friction and self welding facilities. See Abstr. No. 1099.

49.

Metals and Alloys

Study of the elastic stresses in thin gold layers. 1159.

41 : 30 : 19 Improved dielectric films for multilayer coatings and mirror protection. See Abstr. No. 1177.

NO, NO2, H20 and HNO2.

(U.S.A.) D. M. Waldorf, and A. L. Babb, J. Chem. Phys., 39 (2), 15 July 1963, 432-435. 49 : 30 1198. Quartz crystal microbalance for measuring ultra-thin films.

(U.S.A.) The instrument evolved by the Scientific Equipment Department of Westinghouse, Pittsburgh, U.S.A., measures changes in mass deposited on a crystal surface by recording the corresponding change in resonant frequency of the crystal. In practice, two electrically excited quartz crystals are used, one of which is placed close to the substrate being coated whilst the other is for reference purposes. The frequency of the exposed crystal,