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GIDEP can improve productivity through information exchange
MicroelectronReliab..Vol.22,No. l. pp. 131-143 Printedin Great Britain
0026-2714/82/010131-13$02.00/0 © 1982PergamonPress Ltd.
WORLD ABSTRACTS ON MICROELECTRONICS AND RELIABILITY The abstracts below are given in reasonable detail where necessary so that an appreciation can be made of the coverage of the article. They are probably the most comprehensive detailed abstracts published in these two fields and in general are all of articles published within the last 12 months. They are classified into the following sections.
Subjects 1. Reliability--General. 2. Reliability of Components, Tubes, Transistors and ICs. 3. Circuit and Systems Reliability, Maintenance and Redundancy. 4. Microelectronics-- General. 5. Microelectronics--Design and Construction. 6. Microelectronics--Components, Systems and Equipments. 7. Semiconductor Integrated Circuits, Devices and Materials. 8. Thick- and Thin-Film Components, Hybrid Circuits and Materials. 9. Electron, Ion and Laser Beam Techniques.
1. R E L I A B I L I T Y - - G E N E R A L GIDEP can improve productivity through information Exchange. WILLIAM E. ARNITZ. 1981 Proceedings Annual Reliabili O, and Maintainability Symposium, Philadelphia, Pennsylvania, p. 128 (27-29 January 1981). This paper deals with the organization, content, philosophy, and operation of the Government-Industry Data Exchange Program (GIDEP). It is meant to provide the uninitiated with a basic understanding of the program. It is also meant to provide
2. R E L I A B I L I T Y
OF COMPONENTS,
Soldering without shorts--joints are auto N D tested. JOE KELLER. 1981 Proceedings Annual Reliability and Maintainability Symposium, Philadelphia, Pennsylvania, p. 283 (27-29 January 1981 ). With present trends toward highdensity printed wiring boards (PWB's), reliability at the solder joint level has an increasing impact on production cost, life cycle cost, and MTBF (mean time between failures). When state of the art wave soldering equipment proved incapable of reliable operation in newer high-density applications, the author and Motorola investigated the defining properties of solder and the solder joint. These investigations established new solder knowledge which led to development and implementation of the first hot air solder shaping technique, which dramatically reduced solder shorts, lowered printed wiring board (PWB) costs, and provided the first automatic, non-destructive stress test for improved PWB reliability. Investigation of the molecular processes controlling corrosion failure mechanisms in plastic encapsulated semiconductor devices. R. M. LUMand L. G. FEINSTE1N.Microelectron. Reliab. 21 (I), 15 i1981). Corrosion related failures of plastic encapsulated semiconductor devices have been observed during accelerated aging tests, with some indication of increased failure rates in flame-retarded moiding compounds. Dynamic pyrolytic-mass spectrometry, thermogravimetric analysis and differential scanning calorimetry, combined with aqueous extraction and X-ray fluorescence analyses, are used to study the detailed chemistry involveci in the decomposition of novolac-epoxy resins during thermal aging. The data obtained reveal that extensive outgassing occurs from several sources in different temperature ranges. In particular, methyl chloride, released
insight into the utilization of the Program to enhance productivity through the application of technology transfer to the assurance sciences. In other words, to apply knowledge obtained from existing information to improve the various in-house "ilities" which in turn will enhance the information user's productivity. Don't re-invent the wheel, however, be sure the wheel, invented by someone else, is round enough to roll ! TUBES, TRANSISTORS
AND ICs
from residual chlorine-containing species used in the polymerization process, is identified as a dominant product at device testing temperatures (200°C). Inclusion of a brominated flame retardant in the epoxy formulation, however, results in only minor differences in the volatile product composition at temperatures ~200°C. The major release of bromine products is observed at higher temperatures (> 300°C). A detailed discussion of the molecular processes governing polymer outgassing in the different temperature ranges is presented. Special emphasis is placed on the comparison of a flame retarded and nonflame retarded novolac-epoxy formulation. Finally, the mechanisms in semiconductor devices are discussed. Field effect transistor microwave characterization: noise figure, gain, power measurements on microwave bench. M. BINET and P. BAUDET.Acta Electronica 23 (2), 127 (1980) (in German). In this article are described the techniques of measurement of the characteristics of field effect transistors on microwave bench. The general design of the set-up is first exposed, especially with an analysis of the influence of the losses and with a description of the impedance tuners. Then, the method of measurement of the noise figure and the gain is described, with all the necessary corrections. Finally, the setup for power measurement is described with all the associated apparatus.
A numerical analysis of avalanche breakdown in short-channel MOSFETs. N. KOTANI and S. KAWAZU. Solid-St. Electron. 24, 681 (1981). Recently, the electrical characteristics for the short channel MOSFETs (Metal-Oxide-Semiconductor field effect transistor) have become important because of the increasing density of LSIs (Large Scale Integrated Circuits). 131
0026-2714/82/010131-13$02.00/0 © 1982PergamonPress Ltd.
WORLD ABSTRACTS ON MICROELECTRONICS AND RELIABILITY The abstracts below are given in reasonable detail where necessary so that an appreciation can be made of the coverage of the article. They are probably the most comprehensive detailed abstracts published in these two fields and in general are all of articles published within the last 12 months. They are classified into the following sections.
Subjects 1. Reliability--General. 2. Reliability of Components, Tubes, Transistors and ICs. 3. Circuit and Systems Reliability, Maintenance and Redundancy. 4. Microelectronics-- General. 5. Microelectronics--Design and Construction. 6. Microelectronics--Components, Systems and Equipments. 7. Semiconductor Integrated Circuits, Devices and Materials. 8. Thick- and Thin-Film Components, Hybrid Circuits and Materials. 9. Electron, Ion and Laser Beam Techniques.
1. R E L I A B I L I T Y - - G E N E R A L GIDEP can improve productivity through information Exchange. WILLIAM E. ARNITZ. 1981 Proceedings Annual Reliabili O, and Maintainability Symposium, Philadelphia, Pennsylvania, p. 128 (27-29 January 1981). This paper deals with the organization, content, philosophy, and operation of the Government-Industry Data Exchange Program (GIDEP). It is meant to provide the uninitiated with a basic understanding of the program. It is also meant to provide
2. R E L I A B I L I T Y
OF COMPONENTS,
Soldering without shorts--joints are auto N D tested. JOE KELLER. 1981 Proceedings Annual Reliability and Maintainability Symposium, Philadelphia, Pennsylvania, p. 283 (27-29 January 1981 ). With present trends toward highdensity printed wiring boards (PWB's), reliability at the solder joint level has an increasing impact on production cost, life cycle cost, and MTBF (mean time between failures). When state of the art wave soldering equipment proved incapable of reliable operation in newer high-density applications, the author and Motorola investigated the defining properties of solder and the solder joint. These investigations established new solder knowledge which led to development and implementation of the first hot air solder shaping technique, which dramatically reduced solder shorts, lowered printed wiring board (PWB) costs, and provided the first automatic, non-destructive stress test for improved PWB reliability. Investigation of the molecular processes controlling corrosion failure mechanisms in plastic encapsulated semiconductor devices. R. M. LUMand L. G. FEINSTE1N.Microelectron. Reliab. 21 (I), 15 i1981). Corrosion related failures of plastic encapsulated semiconductor devices have been observed during accelerated aging tests, with some indication of increased failure rates in flame-retarded moiding compounds. Dynamic pyrolytic-mass spectrometry, thermogravimetric analysis and differential scanning calorimetry, combined with aqueous extraction and X-ray fluorescence analyses, are used to study the detailed chemistry involveci in the decomposition of novolac-epoxy resins during thermal aging. The data obtained reveal that extensive outgassing occurs from several sources in different temperature ranges. In particular, methyl chloride, released
insight into the utilization of the Program to enhance productivity through the application of technology transfer to the assurance sciences. In other words, to apply knowledge obtained from existing information to improve the various in-house "ilities" which in turn will enhance the information user's productivity. Don't re-invent the wheel, however, be sure the wheel, invented by someone else, is round enough to roll ! TUBES, TRANSISTORS
AND ICs
from residual chlorine-containing species used in the polymerization process, is identified as a dominant product at device testing temperatures (200°C). Inclusion of a brominated flame retardant in the epoxy formulation, however, results in only minor differences in the volatile product composition at temperatures ~200°C. The major release of bromine products is observed at higher temperatures (> 300°C). A detailed discussion of the molecular processes governing polymer outgassing in the different temperature ranges is presented. Special emphasis is placed on the comparison of a flame retarded and nonflame retarded novolac-epoxy formulation. Finally, the mechanisms in semiconductor devices are discussed. Field effect transistor microwave characterization: noise figure, gain, power measurements on microwave bench. M. BINET and P. BAUDET.Acta Electronica 23 (2), 127 (1980) (in German). In this article are described the techniques of measurement of the characteristics of field effect transistors on microwave bench. The general design of the set-up is first exposed, especially with an analysis of the influence of the losses and with a description of the impedance tuners. Then, the method of measurement of the noise figure and the gain is described, with all the necessary corrections. Finally, the setup for power measurement is described with all the associated apparatus.
A numerical analysis of avalanche breakdown in short-channel MOSFETs. N. KOTANI and S. KAWAZU. Solid-St. Electron. 24, 681 (1981). Recently, the electrical characteristics for the short channel MOSFETs (Metal-Oxide-Semiconductor field effect transistor) have become important because of the increasing density of LSIs (Large Scale Integrated Circuits). 131