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HMOS II static RAMs overtake bipolar competition
MICROELECTRON|CS World Abstracts Papers published in 1975-1980 which are considered to be of technical merit will be abstracted by Charles E. Jowett and published in this, and subsequent issues of MicroelectronicsJournal. Abstracts in this issue comprise papers published in 1978. They are classified under the following headings: Integrated Circuit Technology Memories Microprocessors Optoelectronics Hybrids Discrete Devices Charged Coupled Devices Materials Production and Processing Testing Applications It is the intention, in successive issues of the Journal, to bring the paper abstracts up-to-date, presenting the reader with an easy reference to many of the important papers which have been published in journals throughout the world.
1.
Integrated Circuit Technology 1.1
MOS
MNOS technology -will it survive? W. D. BROWN SolidSt. TechnoL p.77 (July 1979). MNOS technology has been around for more than ten years. At the present time there is concern within the industry regarding the survival of the technology. The MNOS device structure and theory of operation are reviewed and problem areas are discussed. Some possible reasons for the survival question are raised and suggestions for rescuing the technology are presented. Digital phase-locked loop finds clock signal in bit stream J O H N SNYDER Electronics p. 126 (30 August 1979). A new MOS chip can extract the original data rate even from a demodulated or encoded input. HMOS I1 static RANis overtake bipolar competition R. M. JECMEN, C. 11. HUI, A. V. EBEL, V. KYNETI" and R. J. SMITH Electronics p. 124 (13 September 1979). Shrinking process comes up with improved access times, new production remains compatible with lIMOS fabrication. 36
Nonequilibrium response of m.o.s, devices to a linear voltage ramp in the presence of illumination P. G. C. ALLMAN and K. B O A R D Solid-St. electron Devices 3, (5) 117 (September 1979). The response of m.o.s, devices to a fast linear voltage ramp, when under illumination, is analysed. The presence of traps in the semiconductor bulk generation and photogeneration are similar, but not identical, effects. The devices exhibit a photoresponse up to a maximum value of light intensity, when saturation occurs, and no further light sensitivity is observed. Experimental data is presented for conditions when bulk generation is significant and insignificant, and good agreement is found in each case between theory and experiment.
1.2
LSI
ECL accelerates to new system speeds with high-density byte-slice parts P A U L CHU Electonics p. 120 (2 August 1979). LSI reduces interconnect delays that have throttled ECL, allowing it to overtake available mainframe TI'L.
1.3
General
One-chip data-encryption unit accesses memory directly JOHN BEASTON Electronics p. 126 (2 August 1979). 5-V peripheral circuit implements National Bureau of Standards' dataencryption algorithm at 640 bits per second.
MICROELECTRONICS JOURNAL Vol. 11 No. 6 © 1980 Mackintosh Publications Ltd., Luton.
1.
Integrated Circuit Technology 1.1
MOS
MNOS technology -will it survive? W. D. BROWN SolidSt. TechnoL p.77 (July 1979). MNOS technology has been around for more than ten years. At the present time there is concern within the industry regarding the survival of the technology. The MNOS device structure and theory of operation are reviewed and problem areas are discussed. Some possible reasons for the survival question are raised and suggestions for rescuing the technology are presented. Digital phase-locked loop finds clock signal in bit stream J O H N SNYDER Electronics p. 126 (30 August 1979). A new MOS chip can extract the original data rate even from a demodulated or encoded input. HMOS I1 static RANis overtake bipolar competition R. M. JECMEN, C. 11. HUI, A. V. EBEL, V. KYNETI" and R. J. SMITH Electronics p. 124 (13 September 1979). Shrinking process comes up with improved access times, new production remains compatible with lIMOS fabrication. 36
Nonequilibrium response of m.o.s, devices to a linear voltage ramp in the presence of illumination P. G. C. ALLMAN and K. B O A R D Solid-St. electron Devices 3, (5) 117 (September 1979). The response of m.o.s, devices to a fast linear voltage ramp, when under illumination, is analysed. The presence of traps in the semiconductor bulk generation and photogeneration are similar, but not identical, effects. The devices exhibit a photoresponse up to a maximum value of light intensity, when saturation occurs, and no further light sensitivity is observed. Experimental data is presented for conditions when bulk generation is significant and insignificant, and good agreement is found in each case between theory and experiment.
1.2
LSI
ECL accelerates to new system speeds with high-density byte-slice parts P A U L CHU Electonics p. 120 (2 August 1979). LSI reduces interconnect delays that have throttled ECL, allowing it to overtake available mainframe TI'L.
1.3
General
One-chip data-encryption unit accesses memory directly JOHN BEASTON Electronics p. 126 (2 August 1979). 5-V peripheral circuit implements National Bureau of Standards' dataencryption algorithm at 640 bits per second.
MICROELECTRONICS JOURNAL Vol. 11 No. 6 © 1980 Mackintosh Publications Ltd., Luton.