List of contents and author index volume 23, 1980

List of Contents NUMBER 1

CHING-YUANWu, KHUN-NANLAI and CHUNG-YUWV: Generalized theory and realization of a voltage-controlled negative resistance MOS device (lambda MOSFET) . . . . . . . . . . . . . . . . . . . . . . W. KELLNER,N. ENDERS,D. RISTOWand H. KNIEPKAMP:Design considerations for planar Schottky barrier diodes . . . . . . . . . . . . . . ARMAND~ADAN and K,&ROLYD~BOS: New types of metal-insulator-semicon. . . . . . . . ductor switch . . . . , . . . . . . . F. M. KLAASSEN,H. J. WILTINGand W. C. J. DE GR&: A UHF MOS tetrode with polysilicon gate . . . . . . . . . . . . . . . . . . T. ENGLERT, G. ABSTREITERand J. PONTCHARRA: Determination of existing . stress in silicon films on sapphire substrate using Raman spectroscopy R. W. COEN and R. S. MULLER: Velocity of surface carriers in inversion layers on silicon . . . . . . . . . . . . . . . . . . . . P. PANAYOTATOS and H. C. CARD:Recombination in the space-charge region of Schottky barrier solar cells . . . . . . . . . . . . . . . . KARELM. VANVLIET and ALAN H. MARSHAK:The Shockley-like equations for the carrier densities and the current flows in materials with a nonuniform composition . . . . . . . . . . . . . . . . . . . . . A. MARTINEZ,D. ESTEVE,A. GUIVARC’H, P. AUVRAY,P. HENOCand G. PELOUS: . Metallurgical and electrical properties of chromium silicon interfaces G. BACCARANI, M. RUDAN,G. SPADINI,H. MAES, W. VANDERVORST and R. VAN OVERSTRAETEN: Interpretation of C-V measurements for determining the doping profile in semiconductors . . . . . . . . . . . . . . RITU SHR~VASTAVA and ALAN H. MARSHAK:Charge neutrality and the internal . . . . . . . . . . electric field produced by impurity diffusion J. P. LAVINE and B. C. BURKEY: Extensions of the Scharfetter-Gummel: approach to charge transfer . . . . . . . . . . . . . . . . E. KAMIENIECKI,R. NITECKIand A. &IATEK: Optically active interface states in MOS structures . . . . . . . . . . . . . . . . . . . S. E. D. HABIB and J. G. SIMMONS:Analytical expressions for tunnel currents in metal-insulator-metal (MIM) and metal-insulator-semi-conductor (MIS) structures in a two-band model . . . . . . . . . . . . . . . K. R. MURALIand D. R. RAO: Radiation induced traps of zinc phosphate and phosphide . . . . . . . . . . . . . . . . .. . . . . . Note A. K. DATTA, K. GHOSH, R. N. MITRA and A. N. DAW: Characteristics of . . metal-semiconductor diodes made by a chemical reduction process

1 9 17 23 31 35 41

49 55

65 73 75 79

87 93

99

NUMBER 2 J. KOLK and E. L. HEASELL: A study of charge trapping in the Al-A1203-Si MIS system . . . . . . . . . . . . . . . . . . . . . .

101

K. H. NICHOLS, CAMELLIAM. L. YEE and C. M. WOLFE: High-temperature carrier transport in n-type epitaxial GaAs . . . . . . . . . . .

109

M. N. YODER:Ohmic contacts in GaAs

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117

CORNELISD. HARTGRING,W. G. OLDHAMand TSU-YIN CHIU: A MESFET model for circuit analysis . . . . . . . . . . . . . . . . .

121

D. RAY CHOUDHURY, C. K. SARKARand D. CHA~TOPADHYAY: Harmonic generation due to hot electrons in surface inversion layers . . . . . . . .

127

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Contents

D. H. PAXMANand K. R. WHIGHT: Observation bination centres in silicon power devices

of lifetime controlling

recom-

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129

D. A. TJAPKINand M. M. JEVTI~ On the small-signal equivalent circuit of p-n junctions in the condition of finite carriers multiplication . . . .

133

B. L. SOPORI, R. W. GURTLERand I. A. LESK: Effects of optical beam size on . . . diffusion length measured by the surface photo-voltage method

139

LAILA R. RAZOUKand GEROLD W. NEUDECK: The p+n-n+ diode pulsed at extreme current densities-I. Numerical techniques and reverse pulsed case

143

GEROLD W. NEUDECKand LAILA R. RAZO~~K:The p+n-rz+ pulsed diode at extreme current densities-II. The forward pulsed case and its anomalous voltage response . , . . . . . . . . . . . . . . . .

lS1

H. L. GRUBIN;D. K. FERRYand K. R. GLEASON:Spontaneous gallium arsenide field effect transistors . . . . .

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I57

L. A. AKERS: The effect of field dependent mobility on the threshold voltage of a small geometry MOSFET . . . . . . . . . . . . .

173

OLDWIGVON Roos: The determination of transport parameters of minority carriers in n-p junctions by means of an electron microscope. Critique of recent developments . . . . . . . . . . . . . . . .

177

Notes E. L. HEASELL: On the role of degeneracy

183

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oscillations .

in the “heavy-doping”

in

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phenomenon

B. S. POLSKY and J. S. RIMSHANS:Comparison of different methods for numerical simulation of transient processes in bipolar semiconductor devices . . . . . . . . . . . . . . . . . . . . .

I83

H. L. KWOK and KWOK-FOON LEE: Investigation . . . properties of a bipolar transistor

I85

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NUMBER 3 M. W. HILLEN and R. B. M. GIRISCH: The influence of surface states on a pulsed . . . MOS capacitor recombination lifetime measurement J.-C. MANIFACIER, J. JIMENEZ,J. P. FILLARDand H. K. HENISCH:Low field study of . . P+NN’ or P’PN’ structures in the foward direction DAVIDScorr and DAVIDROULSTON:&.--V,., characteristics of double diffused . . . . . . . . . bipolar transistors under low level injection CHING-YUAN WV and WEN-ZEN SHEN: The open-circuit voltage of back. surface-field (BSF) p-n junction solar cells in concentrated sunlight RICHARDA. KIEHL: Dynamic minority-carrier storage in TRAPATT diodes J. KOI.K and E. L. HEASELL: Charge injection from a surface depletion region-the Alz03-silicon systems . . . . . . J. KOLK and E. HEASELL: An experimental technique for the study of non-avalanche charge injection or trapping in MIS structures F. M. KLAASSENand W.‘C. J. DE GROOT: Modelling of scalded-ddwn MOS transistors . . . . . . . . . . . . . . . . J. P. BIGORGNE,M. FAVRE,G. SALACEand J. DESPUJOLS:An investigation of the . interface state density in metal-silicon nitride-silicon structures CHRISTOSTSIRONIS:Microplasma effects in gallium arsenide epilayers and FETs M. FINETTI,P. OSTOJA,S. SOLMIand G. SONCINI:Aluminum-silicon ohmic contact on “shallow” n ‘Ip junctions _ . . . . . . . . . . JUH TZENG LUE: The barrier height change and current transport phenomena with the presence of interfacial layer in MIS Schottky barrier solar cells

I89 197 201 209 217 233 229 237 243 249 255 263

Contents

Y. ISHII, S. NOJIMA, M. IDA and K. KURUMADA: A new approach to fabrication of GaAs JFETs . . . . . . . . . . . . . . . . . . . . .

BHASKARMANTHAand H. THURMANHENDERSON:Post-breakdown bulk oscillations in gold-doped silicon p’-i-n’ double-injection diodes . . . . TUNG H. WENG: On the shift of threshold voltage of nonuniformly doped MOS transistors . . . . . . . . . . . . . . . . . . . . . . OLDWIG VON Roos: The influence of a voltage ramp on the measurement of I-V characteristics of a solar cell . . . . . . . . . . . . . . . . NICOL MCGRUERand D. K. REINHARD:The effect of photogenerated carriers on the mean time delay for avalanche breakdown in p-n junctions . . .

... 111

269 275 283 285 289

Note N. K. D. CHOWDHURY,K. GHOSH and T. B.BISWAS: The effect

distribution

of dopant and built-in electric field on the transit time of a transistor .

J. MARTINEZand J. PIQUERAS:On the mobility of polycrystalline semiconductors . . . . . . . . . . . . . . . . . . . . . . . . ALLEN P. I. Ho and C. T. SAH: A quasi-three-dimensional large-signal circuit model for lateral transient analysis of MOS device . . . . . . . . L. K. J. VANDAMME:Model for l/f noise in MOS transistors biased in the linear region . . . . . . . . . . . . . . . . . . . . . L. K. J. VANDAMME and H. M. M. DE WERD: l/f noise for MOSTs biased in nonohmic region . . . . . . . . . . . . . . . . . . . . E. M. BUTURLAand P. E. CO-I-~RELL:Simulation of semiconductor transport using coupled and decoupled solution techniques . . . . . . . . . A. TOUBOUL,D. SODINI,D. RIGAUDand G. LECOY: Analysis of channel noise and threshold voltage in SOS-MOS transistors in the temperature range of 77-300 K . . . . . . . . . . . . . . . . . . . . . . . C. L. WILSON: Scanning electron microscope measurements on short channel MOS transistors . . . . . . . . . . . . . . . . . . . . H. ALBRECHTand L. LERACH: Normalized representation of the avalanche breakdown behavior in one-sided abrupt junctions . . . . . . . . PAUL D. ESQUEDAand MUKUNDAB. DAS: Characterization of surface states in HCl-grown oxides using MOS transient currents . . . . . . . . . D. N. DANA and B. B. PAL: High frequency noise properties of a double avalanche region (DAR) IMPATT diode . . . . . . . . . . . . L. F. EASTMAN,S. TIWARIand M. S. SHUR: Design criteria for GaAs MESFETs related to stationary high field domains . . . . . . . . . . R. K. COOK, J. P. KASOLDand K. A. JONES: Using the C-V curve of an MIS diode to examine the trapping levels in a semiconductor containing many discrete traps . . . . . . . . . . . . . . . . . . . . . P. KORLXXand G. L. PEARSON:Grown junction GaAs solar cells with a thin graded band-gap A&Gal_, As surface layer . . . . . . . . . . . Notes I. L. ZAITSEVSKIJ,R. V. KONAKOVA,V. I. SHAKHOVTSOV and Yu. A. TKHORIK: Study of microplasma breakdown in Schottky barrier diodes by means of a modulation method . . . . . . . . . . . . . . . . . . . UMESH KUMAR: Accurate two-port model for the MOS transistor in the pre-pinchoff region . . . . . . . . . . . . . . . . . . . SSE Vol. 23,h’o.12-F

293

297 305 317 325 331

335 345 357 365 377 383

391 399

401

403

iv

Contents NUMBER 5

JENNIFER A. ROBINSON,YOUSSEF A. EL MANSY and A. ROY BOOTHROYD:A general four-terminal charging-current model for the insulated-gate fieldeffect transistor-I . . . . . . . . . . . . . . . . . . Y. A. EL-MANSY and A. R. BOOTHROYD:A general formulation of the parameters of the equivalent circuit model of the IGFET-II . . . A. ROHATGI,J. R. DAVIS,R. H. HOPKINS,P. RAI-CHOUDHURY, P. G. MCMULLIN and J. R. MCCORMICK:Effect of titanium, copper and iron on silicon solar cells . . . . . . . . . . . . . . . . . . . . . . . . G. BLASQUEZ,J. CAMINADEand K. M. VAN VLIET: An accurate analysis of noise in rectangular bipolar transistors including current crowding . . . . . GIORA Y ARON and Dov FROHMAN-BENTCHKOWSKY: Capacitance voltage characterization of poly Si-SiOZ-Si structures . . . . . . . . . PHILLIP RUTTER:Avalanche injection in MNOS gate controlled diodes . . M. ITOH, S. SUZUKI, T. ITOH, Y. YAMAMOTOand K. G. STEPHENS: Low resistance ohmic contacts containing Sb to GaP . . . . . . . . ARMAND~ADAN and IMRE ZOLOMY: A proposed model of MISS composed of two active devices . . . . . . . . . . . . . . . . . BERNARDL. MORRIS:The effects of phosphorus diffusion cooling rate on 12L gain . . . . _ . . . . . . . . . . . . . . . . . SEL COLAK and EDWARDH. STUPP: Reverse avalanche breakdown in gated diodes . . . . . . . . . . . . . . . . . . . . . A. Rusu, 0. PIETRAREANUand C. BULUCEA: Reversible breakdown voltage collapse in silicon gate-controlled diodes . . . . . . . . . . . G. M. VON STASZEWSKIand N. E. WALS~E DE RECA: Electromigration mechanism in aluminium conductors . . . . . . . . . . . . G. K. REEVES: Specific contact resistance using a circular transmission line model . . . . . . . . . . . . . . . . . . . . . ANTHONYC. HILL, WILLIAM G. ALLEN and ROY BRADLEY: An automatic smoothing algorithm for the calculation of impurity concentration from sheet resistivity and sheet Hall coefficient data . . . . . , . . . S. E-D. HABIB and J. G. SIMMONS: Theory of switching in p-n-insulator (tunnel)-metal devices-II: Avalanche mode . . . . . . . . . . Notes W. C. LEIPOLDand T. E. FEUCHTWANG: Resonant tunneling in MIM structures G. LUBBERTSand C. R. VISWANATHAN: Generation and external current in MOS capacitors . . . . . . . . . . . . . . . . . . . DAVIDT. Y. WEI: The negative differential resistance and the slope equation of a thyristor . . . . . . . . . . . . . . . . . . . . G. KAPLAN:Determination of minority carrier lifetime and surface generation velocity by hysteresis pulsed C-V method . . . . . . . . . . . A. ADAN, A. SARMIENTO,R. HERRERAand J. A. ECHEVERRIA:Multiplication effects in polysilicon MIS diodes . . . . . . . . . . . . . . AMITABHCHANDRA:Calculation of the free carrier density profile in a semiconductor near an ohmic contact . . . . . . . . . . . . .

405 411

415 423 433 441 447 449 457 467 473 481 487

491 497

507 507 509 513 515 516

NUMBER 6

J. R. BARKER and D. K. FERRY: On semiconductor devices-I . . . J. R. BARKER and D. K. FERRY: On semiconductor devices-II. The very

the physics .

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the physics small device

and modeling .

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of small .

and modeling .

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519

of small .

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531

D. K. FERRY and J. R. BARKER: On the physics and modeling of small semiconductor devices-III. Transient response in the finite collision-duration regime L. MESSICK:A d:c. to ;6 GHz indium phosphide’M&ET . : : : : : : . . W. VERSNEL:Analysis of Hall-plate shaped Van der Pauw structures K. LEHOVECand A. FEWTOWSKY:Scanning light spot analysis of faulty solar cells . . . . . . . . . . . . . , . . . . . . . . . . Uoo LIENEWEG: Frequency response of charge transfer in MOS inversion layers . , . . . . . . . . . . . . . . . . . . . . . . K. HESS, B. A. VOJAK, N. HOLONYAK,JR., R. CHIN and P. D. DAPKUS: Temperature dependence of threshold current for a quantum-well heterostructure laser . . . . . . . . . . . . . . . . . . . . . E. CALLEJA,J. GARRIDO,J. PIQUERASand A. MARTINEZ:Thermal degeneration of MO and Pt silicon Schottky diodes . . . . . . , . . . . . . AMITABHCHANDRAand LESTER F. EASTMAN: A study of the conduction , . . . properties of a rectifying nGaAs-n(Ga, Al)As heterojunction RICHARDJ. MCPARTLANDand ANANTG. SABNIS:A low-high-junction solar-cell model developed for use in tandem cell analysis . . . . . . . . . B. W. THOMAS,G. J. REES and D. R. WIGHT: Light generation in diffused GaP light emitting diodes (LEDs) . . . . . . . . . . . . . . . . MAU-CHUNGCHANGand MAO-CHIEHCHEN: Power losses and optimum opera. . . . . . . . . . tion conditions of silicon quasi-Read diodes T. H. GLISSON, R. A. SADLER,J. R. HAUSERand M. A. LITTLEJOHN:Circuit effects in time-of-flight diffusivity measurements . . . . . . . . . T. D. MOK and C. A. T. SALAMA:The characteristics of an enhancement mode VFET . . . . . . . . . . . . . . . . . . . . . . . . A. JAKUBOWICZ: Theory of lifetime measurements in thin semiconductor layers with the scanning electron microscope; transient analysis . . . . . . CHING-YUANWu: On the forward current-voltage characteristics of p+-nn+(n+-p-p+) epitaxial diodes . . . . . . . . . . . . . . . . ABHAIMANSINGH, RAMADHAR SINGHand S. B. KRUPANIDHI: Electrical switching in . . . . . . . . . . . single crystal VOz K. LEE and A. NUSSBAUM:The influences of traps on the generatidn-recombination current in silicon diodes . . . . . . . . . . . . . . J. L. PAUTRAT: Electric field and impurity concentration effects on the . . . ionization energy of impurities. Application to acceptors in ZnTe M. J. LEE, S. W. WRIGHTand C. P. JUDGE:Electrical and structural properties . . . . . . . . . . . of cadmium selenide thin film transistors HENK KOERSELMAN and TEUNIS POORTER:Excess concentration, electron and . . . . . . . . . . . . . hole currents in an epitaxial emitter DAVIDA. SMITHand C. A. T. SALAMA:A UMOS power field effect transistor

54.5 551 557 565 577

585 591 599 605 611 621 627 631 635 641 649 655 661 671 681 687

NUMBER 7

PIOTR PEOTKA and BOGDANWILAMOWSKI:Interpretation of exponential type drain characteristics of the static induction transistor . . . . . . . TH. G. VAN DE ROER: l/f noise and velocity saturation in punch-through diodes F. LAU, H. POTH and P. BALK: Isothermal and non-isothermal C-V trap measurements-a critical comparison . . . . . . . . . . . . A. J. STECKL and S. P. SHEU: The a.c. admittance of the p-n PbS-Si heterojunction . . . . . . . . . . . . . . . . . . . . . KOZIRONARITAand KEN YAMAGUCHI: IGFET hot electron emission model . K. F. KNOTT: Anomalous I-V and burst noise characteristics associated with surface channels in an NPN integrated transistor . . . . . . . .

693 695 703 715 721 727

vi

Contents

M. S. ADLER and B. J. BALIGA: A simple method for predicting the forward blocking gain of gridded field effect devices with rectangular grids PAUL D. ESQUEDAand MUKIJNDAB. DAS: Dependence of minority carrier bulk generation in silicon MOS structures on HCI concentration in an oxidizing ambient . . . . . . . . . . . . . . . S. N. CHAKRAVARTIand P. DAS: Multiple buried channel charge-coupled device

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735

741 747

JANUSZ M. PAWLIKOWSKI,NELLA MIROWSKA,PIOTR BECL.Aand FRANCISZEK 755 KROLICKI:Photoelectric properties of Zn7Pz . . . . . . . . EIJI OHTA and MAKOTOSAKATA:Thermal emission rates and capture cross 759 sections of majority carriers at vanadium centers in silicon . . TEUNISP~ORTERand JOHANNESH. SAGER: A d.c. model for an MOS-transistor 765 in the saturation region . . . . . . . . . . . . . B. T. DEBNEYand P. R. JAY: The influence of Cr on the mobility of electrons 773 in GaAs FETs . . . . . . . . . . . . . . . 783 F. BERZ: Ramp recovery in p-i-n diodes . . . . . . . Notes R. N. MITRA, S. B. ROY, K. GHOSH and A. N. DAW: Electrochemically deposited Schottky contacts of In, Cd and In-Cd alloy . . . K. F. KNOTT: L.F. noise related to burst noise . . . . . . . A. DILIGENTI, B. PELLEGRINI, G. SALARDI, P. E. BAGNOLIand C. FI.ORES: Ga,.,AI,As band structure from I-V, C-V measurements on Schottky diodes . . . . . . . . . . . . . . . . . . Communications G. C. JAIN, A. PRASADand B. C. CHAKRAVARTY: Origin of high electronic density

in anodic

oxidation

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of Si

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current .

799

801

I. GOLECKIand M-A. NICOLET:Improvement

silicon-on-sapphire

by ion implantation

of crystalline quality of epitaxial and furnace regrowth . . . .

793 795

803

NUMBER 8 YASUHITOZOHTA: Admittance-voltage characteristic of an MOS capacitor formed over p-on-n semiconductor structure . . . . K. B. COOK, W. YEH and V. W. RUWE: Burst noise in phototransistor optical isolators . . . . . . . . . . . . . . . . . . H. SHICHIJO, K. HESS and B. G. STREETMAN:Real-space electron transfer by thermionic emission in GaAs-AI,Ga, .,As heterostructures: analytical model for large layer widths . . . . . . . . . . . . . . W. J. DEVLIN, C. E. C. WOOD, R. STALL and L. F. EASTMAN:A molybdenum source, gate and drain metallization system for GaAs MESFET layers grown by molecular beam epitaxy . . . . . . . . . . . . . S. S. KULAR, B. J. SEALY, K. G. STEPHENS,D. SADANAand G. R. BOOKER: Electrical, Rutherford backscattering and transmission electron microscopy studies of furnace annealed zinc implanted GaAs . . . . S. B. PHATAK, S. M. BEDAIR and SHIGEO FUJITA: Electrical properties of manganese doped Ga,_,In,As grown by liquid phase epitaxy . . MICHAELS. ADLER: A method for terminating mesh lines in finite difference formulations of the semiconductor device equations . . . . . . K. HABERLE and E. FR~SCHLE: MOS device fabrication using sputterdeposited gate oxide and polycrystalline silicon layers . . . . . R. L. STREEVER,J. T. BRESLIN and E. H. AHLSTROM:Surface states at the n-GaAs-Si02 interface from conductance and capacitance measurements N. C. SHARMAand K. L. CHOPRA: Electronic properties of Pb,_,Hg,S-Si heterojunctions . . . . . . . . . . . . , .

807 811

817

823

831 839 845 855 863 869

Contents . . S. S. KULARand B. J. SEALY: Laser annealing of ainc implanted GaAs CHUNG-WHEI KAO and C. R. CROWELL:Impact ionization by electrons and holes in InP . . . . . . . . . . . . . . . . . . . . . &MU YARON, LAVERNE D. HESS and S. A. KOKOROWSKI:Laser annealing . . . . . effects on the electrical characteristics of SOS transistors A. K. DATTA,K. GHOSH,N. K. D. CHOWDHURY and A. N. DAW: Characteristics of metal-semiconductor contacts fabricated by the electroless deposition method . . . . . . . . . . . . . . . . . . . . . . .

vii 875 881 893

905

Note L. M. RUCKERand A. VAN DER ZIEL: The appearance of a negative conduc. . tance at the substrate of a MOSFET exhibiting channel avalanching

909

Communication C. FLORESand D. PASSONI:Beryllium and zinc behaviour in GaAs and GaAlAs for high concentration solar cells . . . . . . . . . . . . . .

911

NUMRER 9

J. ZIMMERMANN and E. CONSTANT:Application of Monte Carlo techniques to hot carrier diffusion noise calculation in unipolar semiconducting components J. POBELAand A. REKLAITIS:Electron transport properties in GaAs at high electric fields . . . . . . . . . . . . . . . . . . . . . G. C. LIM and K. D. LEAVER:The electrical characteristics of cermet-silicon contacts . . . . . . . . . . . . . . . . . . . . . . . J. P. DONNELLYand C. E. HURWITZ:The effect of implant temperature on the electrical characteristics of ion implanted indium phosphide . . . . . S. B. ROY and A. N. DAW: Effect of non-uniformly doped surface layer on the barrier height of a Schottky contact . . . . . . . . . . . . . C. J. BULL, P. ASHBURNand J. P. GOWERS: A study of diffused bipolar transistors by electron microscopy . . . . . . . . . . . . . . F. A. LINDHOLM,J. A. MAZER,J. R. DAVISand J. I. ARREOLA:Degradation of solar cell performance by areal inhomogeneity . . . . . . . . . H. R. GRINOLDSand G. Y. ROBINSON:Pd/Ge contacts to n-type GaAs . . W. A. HILL and C. C. COLEMAN: A single-frequency approximation for interface-state density determination . . . . . . . . . . . . . Notes M. D. GILL: A Simple technique for monitoring undercutting in plasma etching . . . . . . . . . . . . . . . . . . . . . . . J. E. PARROTT:Comments on “A note on photocurrents in extrinsic semiconductors” . . . . . . . . . . . . . . . . . . . . . . . A. VAN DER ZIEL: The diffusion potential of p--n- junctions . . . . . . P. RUT~ER:The annealing of thin oxides prior to silicon nitrite deposition . AWATARSINGH: Improved SERMOSFET process . . . . . . . . . M. SRIDHARANand S. K. ROY: Effect of mobile space-charge on the small. . signal admittance of DDR silicon IMPATTs at high current densities YOSHIKAZU TAKEDA,NAOTOSHIKAGAWA and AKIO SASAKI:Transferred-electron oscillation in n-Im,,s3Gao.47As . . . . . . . . . . . . . . . . M. H. LEE and S. M. SZE: Orientation dependence of break-down voltage in GaAs . . . . . . . . . . . . . . . . . . . . . . . Announcement Twelfth Annual Pittsburgh Conference on Modeling and Simulation, Pittsburgh, 30 April-1May 1981 . . . . . . . . . . . . . . . . . . .

915 927 935 943 949 953 %7 973 987

995 996 997 998 1000 1001 1003 1007

i

Contents

VIII

NUMBER 10 RAVENDRA K. GUPTA: Mechanism of operation of field-effect devices L. MANCHANDA, J. VASI and A. B. BHATTACHARYYA: The effect

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I01 1

of high near the

temperature annealing on the spatial variation of bulk lifetime . Si-SiOz interface . . . . . . . . . . . . . . AMITAAGARWALA, V. K. TEWARY,S. K. AGARWAL. and S. C. JAIN: Temperature effects in silicon solar cells . . . . . . . . . . . . . J. K. RODMANand J. T. BOYD: Examination of CCDs using voltage contrast with a scanning electron microscope . . . . . . . . . . A. VANDERZIEL: Equivalent temperature of hot electrons . . . . T. I. KAMINS, K. F. LEE and J. F. GIBBONS: Interface charges beneath laser-annealed insulators on silicon . . . . . . . . . J. Ruzu~~o, K. KUCHARSKIand A. JAKUBOWSKI:Effect of minority carrier injection on lateral current in MIS tunnel structures . . . . . . . MASATADAHORIKJCHIand HISAO KATTO: Operation model of floating-Si-gate channel-corner-avalanche-transition (FCAT) nonvolatile memory devices . Zs. J. HORVATH:Memory hysteresis measurements on silicon oxynitride films GEORGY M. SMIRNOV and JOHN E. MAHAN: Distributed series resistance in photovoltaic devices; intensity and loading effects . . . . . . . R. D. LARRABEEand D. L. BLACKBURN:Theory and application of a nondestructuve photovoltaic tehcnique for the measurement of resistivity variations in circular semiconductor slices . . . . . . . . . OLDWIGVON Ross: Theory of extrinsic and intrinsic heterojunctions in thermal equilibrium . . . . . . . . . . . . . . . . . . . . SEIJI YASUDAand MAMORUKURATA:Two-dimensional field distribution analysis of reverse biased p-n junction devices . . . . . , .

101s 1021 029 035 037 041 1047 1053 1055

1059 I069 1077

Notes

A. D. SUTHERLAND:An algorithm for treating interface surface charge in the two-dimensional discretization of Poisson’s equation for the numerical analysis of semiconductor devices such as MOSFETs . . . . . . M. J. LEE, C. P. JUDGE and S. W. WRIGHT: Properties of CdSe thin film transistors prepared by photolithography . . . . . . . . . . . T. ASANO and P. L. F. HEMMENT:Carrier compensation in 0’ implanted n-type GaAs . . . . . . . . . . . . . . R. E. BRAITHWAITE, C. G. SCOTTand J. B. MULLIN: Formation and stability of In contacts to n-type CdTe . . . . . . . . . . . . . KUNIAKI TANAKA, HIROMASATAKAHASHI,SHIGEKAZUKUNIYOSHIand HAJIME OHKI: Electrical properties of CVD A&03-GaAs MIS capacitors . . A. B. BHAT~ACHARYYA and P. RATNAM: Fabrication and characteristics of “Autodoped depletion VMOSTs” . . . . . . . . . . .

1094

Erratum

1099

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1085 1087 1089 1091 1093

NUMBER 11

J. HOMOLAand A. G. MILNES:Turn-off-type field-controlled thyristor. Concepts for high power operation . . . . . . . . . . . _ . . . . . EUGENER. WORLEY:Theory of the fully depleted SOSlMOS transistor . . CHUNG-YU Wu and CHING-YUANWV: Theoretical and experimental characterization of the Dual-BAse transistor (DUBAT) . . . . . . . . A. ZEMELand D. EGER: Tunnelling current in PbTe-Pbo.BSn,,zTe heterojunctions J. G. FOSSUM,A. NEUGROSCHELand F. A. LINDHOLM:A unifying study of tandem-junction, front-surface-field, and interdigitated-back-contact solar cells . . . . . . . . . . . . . . . . . . . . . . . .

1101 1107 1113 1123

1127

ix

Contents

P.T. LANDSBERGand C. M. KLIMPKE: Surface recombination effects in an improved theory of a p-type MIS solar cell . . . . . . . . . . M. STOISIEKand D. WOLF: Effect of phosphorus gettering on l/f noise in bipolar transistors . . . . . . . . . . . . . . . . . . . . . . J. P. DONNELLYand G. A. FERRANTE:The electrical characteristics of InP implanted with the column IV elements . . . . . . . . . . . . C. L. GARDNERand A. VANDERZIEL: Transistor noise theory in the Middlebrook limit of high injection . . . . . . . . . . . . . . . . . . J. L. PAUTRAT,B. KATIRCI~GLU,N. MAGNEA,D. BENSAHEL,J. C. PFISTERand L. REVOIL:Admittance spectroscopy: a powerful characterization technique for semiconductor crystals-application to ZnTe . . . . . . . . . . T. J. TREDWELLand C. R. VISWANATHAN: Determination of interface-state parameters in a MOS capacitor by DLTS . . . . . . . . . . . W. S. LINDENBERGER, A. R. TRETOLA,W. D. POWELLand A. K. SINHA:Silicon-gate CMOS devices with 300 8, gate oxides . . . . . . . . . . . . BRUNO STUDER: Barrier height control of Pd$i/Si Schottky diodes using diffusion from doped Pd . . . . . . . . . . . . . . . . . A. ROHATGI,R. H. HOPKINS,J. R. DAVIS,R. B. CAMPBELLand H. C. MOLLENKOPF: The impact of molybdenum on silicon and silicon solar cell performance

1139 1147 1151 1155

1159 1171 1179 1181 1185

NUMBER 12

C. M. HORWITZand R. M. SWANSON:The optical (free-carrier) hole-electron plasma in silicon . . . . . . . . .

absorption

of a

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1191

S. T. LIU, 0. N. TUFTE, A. VAN DER ZIEL, S. Y. PAI and W. LARSON:Noise in phosphorus-implanted buried channel MOS transistors . . . . . . .

1195

JOHN ALBERS:. Comparison of spreading resistance correction factor algorithms using model data . . . . . . . . . . . . . . . .

1197

GI?RARDMERCKEL: A simple model of the threshold voltage of short and narrow channel MOSFETs . . . . . . . . . . . . . . . .

1207

CHING-YUANWV: Current gain of high-low junction emitter bipolar transistor structure with uniformly doped profiles . . . . . . . . . . . .

1215

ALAN H. MARSHAKand KAREL M. VAN VLIET: On the separation of quasiFermi levels and the boundary conditions for junction devices . . . .

1223

A. Z. INCECIKand H. W. P~TZL: Electric measurement of impurity concentration in p-type epitaxially grown and ion-implanted base regions . .

1229

J. A. G. SLATHERand J. P. WHELAN:p-i-n

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1235

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1243

B. GOLJA and A. G. NASSIBIAN:Annealing of Si-Si02 interface states using Ar-ion-implant-damage-gettering . . . . . . . . . . . . . .

1249

K. B. COOK, W. YEH and V. W. RUWE: Noise in phototransistor isolators . . . . . . . . . . . . . . . . . . . .

.

1255

K. P. FROHMADERand L. BAUMBAUER:Comparison of Thai’s theory with experimental boron doping profiles in silicon, diffused from boron nitride sources . . . . . . . . . . . . . . . . . . . . . . .

1263

Diode recovery

S. M. ABU NAILAH: Study of the TRIM transistor

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AUTHOR INDEX Abstreiter, G., 31 Abu Nailah, S. M., 1243 Adln. A.. 449.515 Adler; M: S., 735,845 Agarwala, A., 1021 Ahlstrom, E, H., 863 Akers. L. A., 173 Albrecht, H., 357 Albers, .I., 1197 Allen, W. G., 491 Armando, A., 17 Arreola, J. I., 967 Asano, T., 1089 Ashburn, P., 953 Auvray, P., 55 Baccarani, G., 65 Bedair, S. M., 839 Bagnoli, P. E., 799 Baliga, B. J., 735 Balk, P., 703 Barker, J. R., 519,531, 545 Baumbauer, L., 2063 Becla, P., 755 Bensahel. D.. 1159 Berz, F., ‘783’ Bhattacharyya, A. B., 1051, 1094 Bigorgne, J. P., 243 Biswar, T. B., 293 Blackburn, D. L., 1059 Blasquez G., 423 Booker, G. R., 831 Boothroyd, A. R., 405,411 Boyd, J. T., 1029 Bradley, R., 491 Braithwaite, R. E., 1091 Breslin, J. T., 863 Bull, C. J., 953 Bulucea, C., 473 Burkey, B. C., 75 Buturla, E. M., 331 Calleja, E., 591 Campbell, R. B., 1185 Caminade, J., 423 Card. H. C.. 41 Chakravarti; S. N., 747 Chakravarty, B. C., 801 Chandra. A.. 516.599 Chang, M-C:, 621 Chattopadhyay, D., 127 Chen. M-C.. 621 Chin,‘R., 585 Chiu, T-Y., 121 Choudhury, D. R., 127 Chowdhury, N. K. D., 293,905 Coen, R. W., 35 Colak. S.. 467 Coleman,‘C. C., 987 Constant, E., 915 Cook, K. B., 811,2055 Cook, R. K., 391 Cottrell, P. E., 331 Crowell, C. R., 875 Dapkus, P. D., 585 Das, M. B., 365 Datta, A. K., 99, 905 Datta, D. N., 377 Davis, J. R., 415, 967, 1185 Das, M. B., 741 Das. P., 747 Daw, A. N., 793,905,949 Debney, B. T., 773

De Groot, W. C. J., 23,237 De Reca, N. E. W., 481 Despujols, J., 243 Devlin, W. J., 823 De Werd, H. M. M., 325 Diligenti, A., 799 Donnelly, J. P., 943, 1151 Eastman, L. F., 383,599,823 Echeverria, J. A., 515 Eger, D., 1123 El Mansy, Y. A., 405,411 Enders, N., 9 Enelert. T.. 31 Es&reds, P. D., 365,741 Esteve, D., 55 Favre, M., 243 Fedotowsky, A., 565 Ferrante, G. A., 1151 Ferry, D. K., 157,519,531,545 Feuchtwang, T. E., 507 Fillard, J. P., 197 Finetti, M., 255 Flores, C., 799,911 Fossum, J. G., 1127 Frohmader, K. P., 1263 Frohman-Bentchkowskv. 433 Friischle, E., 855 Fujita, S., 839 Gardner, C. L., 1155 Garrido, J., 591 Ghosh, K., 99,293,793,905 Gibbons, J. F., 1037 Gill, M. D., 995 Girisch, R:B. M., 189 Gleason. K. R.. 157 Glisson,‘T. H.,‘627 Golecki, I., 803 Golja, B., 1249 Gowers. J. P., 953 Grinolds, H. R., 973 Grubin. H. L.. 157 Guivarch, A.,‘55 Gupta, R. K., 1011 Gurtler, R. W., 139 Haberle, K., 855 Habib, S. E-D., 87,497 Hartgring, C. D., 117 Hausser, J. R., 627 Heasell, E., 101, 183, 229 Hemment, P. L. F., 1089 Henderson, H. T., 275 Henisch, H. K., 197 Henoc, P., 55 Herrera, R., 515 Hess, K., 585, 817 Hess, La V. D., 893 Hill, A. C., 491 Hill, W. A., 987 Hillen. M. W.. 189 Ho, A: P. I;, 305 Holonyak, Jr. N., 585 Homola, J., 1101 Hopkins, R. H., 415, 1185 Horiuchi. M.. 1047 Horvath,‘Zs.‘J., 1053 Horwitz, C. M., 1191 Hurwitz, C. E., 943 xi

Ida, M., 269 Incecik, A. Z., 1229 Ishii, Y., 269 Itoh. M.447 Itoh; T.;447 Jain, G. C., 801 Jain, S. C., 1021 Jakubowicz, A., 635 Jakubowski. A.. 1041 Judge, C. P:, 1687 Jay;P. R., 773 JevtiC. M. M.. 133 Jimendez, J., ‘197 Jones, K. A., 391 Judge, C. P., 655 Kamieniecki,E., 79 Kamins, T. I., 1037 Kaplan, G., 513 Kao, C-W., 881 Karoly, D., 17 Kasold, J. P., 391 Katircioglu, B., 1159 Katto, H., 1047 Kellner, W., 9 Kiehl, R. A., 217 Klaassen, F. M., 23, 237 Klimpke, C. M., 1139 Kniepkamp, H., 9 Knott, K. F., 795 Koerselman, H., 681 Kokorowski, S. A., 893 Kolk, J. 101, 229 Konakova, R. V., 401 Kordos, P., 399 Krolicki, F., 755 Krupanidhi, S. B., 649 Kucharski, K., 1041 Kular, S. S., 831 Kumar, U., 403 Kuniyoshi, S., 1093 Kurata, M.. 1077 Kurumada,‘K., 269 Kwok, H. L., 185 Lai, K-N., 1 Landsberg, P. T., 1139 Larrabee, R. D., 1059 Larson, W., 1195 Lau, F., 703 Lavine, J. P., 75 Leaver, K. D., 935 Lecoy, G., 335 Lee, K., 655 Lee, K. F., 185, 1037 Lee. M. H.. 1007 Lee; M. J.,‘lO87 Lehovec, K., 565 Leipold, W. C., 507 Lerach, L., 357 Lesk, I. A., 139 Lim, G. C., 935 Lindenberger, W. S., 1179 Lindholm, F. A., 967, 1127 Littlejohn, M. A., 627 Lieneweg, V., 577 Liu, S. T., 1195 Lubberts, G., 507 Lue, J. T., 263 Maes, H., 65 Magnea, N., 1159 Mahan, J. E., 1055

Author Index

xii Manchanda, L., 1015 Manifacier, J.-C., 197 Mansingh, A., 649 Mantha, B., 275 Marshak, A. H., 49, 73, 1223 Martinez, A., 55, 591 Martinez, J., 297 Mazer, J. A.. 967 Merckel, G., 1207 McCormick, J. R., 415 McCruer, N., 289 McMullin, P. G., 415 McPartland. R. J.. 605 Messick, L., 551 Milines, A. G., 1101 Mitra, R. N., 99, 793 Mirowska, N., 755 Mollenkopf, H. C., 1185 Morris. B. L.. 457 Mok, T. D., 631 Muller, R. S., 35 Mullin. J. B.. 1091 Murali, K. R., 93

Ratnam, P., 1094 Razouk, L. R., 143, 151 Rees, G. J., 611 Reeves, G. K., 487 Reinhard, D. K., 289 Reklaitis, A., 927 Revoil, L., 1159 Rigaud, D., 335 Rimshans, J. S., 183 Ristow. D.. 9 Robinson, G. Y., 973 Robinson, J. A., 405 Rodman, J. K., 1029 Rohatgi, A., 415, 1I85 Roulston, D., 201 Roy, S. B.. 793, 949 Roy, S. K., 1001 Rucker, L. M., 909 Rudan, M., 65 Rusu, A., 473 Rutter, P., 441. 998 Ruwe, V. W., 811, 2055 RueyXXo, J., 1041

Narita. K., 721 Nassibian, A. G., 2049 Neudeck, G. W., 143, 151 Neumoschel. A.. 1127 Nichols, K. H., 109 Nicolet, M-A., 803 Nitecki, R., 79 Nojima, S., 269 Nussbaum, A., 655

Sabnis, A. G., 605 Sadana, D., 831 Sadler, R. A., 627 Sah, C. T., 305 Sakata, M., 759 Salace, G., 243 Salama, C. A. T., 631, 687 Salardi, G., 799 Sarkar, C. K., 127 Sarmento, A., 515 Sasaki, A., 1003 Satter. J. H.. 765 Scott, C. G., 1091 Scott, D., 201 Sealy, B. J., 831, 875 Shakhovtsov, V. I., 401 Sharma, N. C., 875 Shen. W.-Z., 209 Sheu, S. P., 715 Shichijo, H., 817 Shikagawa, N., 1003 Shrivastava, R., 73 Shur, M. S., 383 Simmons, J. G., 87, 497 Singh, A., 1000 Singh, R., 649 Sinha, A. K., 1179 Slatter, J. A. G., 1235 Smirnov, G. M., 1055 Smith, D. A., 687 Sodini, D., 335 Solmi, S., 255 Soncini, G., 255 Sopori, B. L., 139 Spadini, G., 65 Sridharan, M., 1001 Stall, R., 823 Steckl. A. J.. 715 Stephens, K. G., 447, 831 Stoisiek. M.. 1147 Streetman, B. G., 817 Streever, R. L., 863 Studer, B., 1181

Ohki, H., 1093 Oldham, W. G., I17 Ostoja, P., 255 Ohta, E., 759 Pai, S. Y., 1195 Pal, B. B., 377 Panayotatos, P., 41 Parrott. J. E., 996 Passoni, D., 91 I Pautrat. J. L.. 1159 Pawlikowski, J. M., 755 Paxman, D. H., 129 Pearson. G. L.. 399 Pellegrini, B., 799 Pelous, G., 55 Pfister, J. C., 1159 Phatak, S. B., 839 Pietrareanu, O., 473 Piqueras. A., 591 Pi&eras, J., 297 PXotka. P., 693 Piitzl, H. W., 2029 Polsky, B. S., 183 Pontcharra, J., 3 1 Poorter, T., 681, 765 Poth, H., 703 Powell, W. D., 1179 Poiela. J., 927 Prasad, A., 801 Rai-Choudhury, Rao, D. R., 93

P., 415

Stupp. E. H., 467 Sutherland, A. D., 1085 Suzuki, S., 447 Swanson. R. M.. 1191 Swiatek, A., 79 Sze, S. M., 1007

Takahashi, H., 1093 Takeda. Y.. 1003 Tanaka; K., 1093 Tewary, V. K., 1021 Thomas, B. W., 611 Tiwari, S., 383 Tjapkin, D. A., 133 Tkhorik. Y. A.. 401 Touboul, A., 335 Tredwell. T. J.. 1171 Tretola. A. R.. I179 Tsironis, C., 249 Tufte, 0. N.. 1195 Vandamme, L. K. J., 317, 325 Van de Roer. Th. G.. 695 Vandervorst, W., 65 Van der Ziel, A., 909,997, 1195,1035, 1155 Van Overstraeten, R., 65 Van Vliet. K. M.. 49. 423. 2023 Vasi, J., I015 Versnel, W., 557 Viswanathan, C. R., 507, 1171 Vojak, B. A., 585 Von Roos, O., 177, 285, 1069 Von Staszewski, G. M., 481 Wei, D. T. Y., 509 Weng. T. H.. 283 WheTan, J. Pl, 2035 Whight, K. R., 129 Wight, D. R., 611 Wilamowski. B., 693 Wilson, C. L., 345 Wilting, H. J., 23 Wolf, D., 1147 Wolfe, C. M., 109 Wood. C. E. C.. 823 Worley, E. R., i 107 Wright, S. W., 1087 Wu, C-Y., 1, 209, 641, II 13, 1215 wu, C-Y., I Yamaguchi, K., 721 Yamamoto, Y., 447 Yaron, G., 433, 893 Yasuda, S., 1077 Yee, C. M. L., 109 Yeh, W., 811, 2055 Yoder, M. N., 117 Zaitsevskij, I. L., 401 Zemel, A., 1123 Zimmermann, J., 915 Zohta, Y., 807 Zolomy, I., 449