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New microwave techniques in surface recombination and lifetime studies
258
ABSTRACTS ON ELECTRONICS RELIABILITY AND MICROMIN[ATURIZATION
Diffusion length measurement by means of ionizing radiation. W. ROSENWEIG, Bell Syst. Tech. 97., Sept. 1962. Minority carrier diffusion lengths in junction containing semiconductor material may be determined by measuring the penetrating-radiation-induced short circuit current. A note on silicon oxide film thickness. H. M. ROBERTSON,J. E. MCNAMARAand R. M. WARNER,Jr., 97. AppL Phys., Sept. 1962. Standard interferometric techniques can be used to measure thickness of an unmetallized silicon oxide film by employing the expression Y ~ a/(n-- l ) where a is the apparent step height and n the index of refraction of the film.
Future trends in professional component development. D. H. ROBERTS, B. L. H. WILSON, H. CRYSTALand J. R. ACTON, Brit. Commun. Electron., June 1963, p. 434-. The general tendency is for all electronic components to lean heavily upon techniques of solid state physics. Probably the most striking example is the silicon solid circuit. N e w microwave techniques in surface recombination and lifetime studies. H. JACOBS, F. A. BRAND, J. D. MEINDL, S. WEITZ, R. BENJAMINand D. A. HOLMES, Proc. I.E.E.E., April 1963, p. 581. A new method of measurement of recombination effects in semiconductors is described. Germanium and silicon slabs are prepared to fill the cross section of a waveguide and changes in microwave transmission as a function of conductivity of the semiconductoi" provide a direct measurement of lifetime. It is shown that under specific conditions of thickness of the sample a linear relationship exists between the transmitted power and the conductivity, even when the conductivity approaches the value of the product of angular frequency and permittivity. Furthermore, the new technique of lifetime measurement is simpler than previously described microwave and conventional d.c. methods and can be used to cover a broader range of conductivities. Experimental data are given to illustrate the principles. Designing diffused integrated circuit resistors. H. DICKEN, Electron. Ind., 21, No. 10, 88 (1962). Brief technological information is given on design of integrated resistors by diffusing a very thin layer of p- or n-impurity into silicon substrate of opposite polarity. Formulae are quoted for resistivity in terms of charges, concentrations and mobilities. Non-linear features are indicated, requiring precautions in circuit atiplications; two typical examples of these are briefly described and illustrated. Compatible techniques for integrated circuits. Components & Materials, May 3, 1963, p. 82. Describes a programme to develop compatible techniques for fabrication of complete integrated circuit functions utilizing semiconductor thin film and other solid-state technologies as required. A unified treatment of semiconductor boundary value problems. D. L. SCHARFETTER,R. W. LADE and A. G. JORDAN, Proc. I.E.E.E., ED-10, No. 1, Jan. 1963, p. 35. A unified approach to the solution of semiconductor boundary value problems is presented. The terminal voltage (including bulk drops) is derived by taking the total current as the independent variable. At semiconductor interfaces relationships between potential drops and carrier concentrations in the neutral regions are reviewed in terms of both the electrostatic and electrochemical potentials. The terminal voltage is expressed in terms of either the electrostatic or electrochemical potentials. Examples are presented to illustrate the techniques presented in this paper in terms of the familiar R P - N R and not so familiar RvNR diodes. On multiplication and avalanche breakdown in exponentially retrograded silicon P - N junctions. H. C. NATHANSON,Proc. I.E.E.E., ED-10, No. 1, Jan. 1963, p. 44-. An analysis of avalanche breakdown in exponentially retrograded p-n junctions results in simple criteria for avoiding breakdown in such structures. Breakdown voltages are shown to be extremely dependent on the surface concentration and grading constant of the retrograded region. The effect of background resistivity on breakdown is also analysed. Unusual saturation effects in the multiplication voltage curves of retrograded p-n diodes aie predicted theoretically. Experimental results point towards a confirmation of this theory.
Junction capacitance switches. G. ADAM, Proc. I.E.E.E., ED-10, No. 1, Jan. 1963, p. 51. The design of junction capacitance switches consisting of a combination of abrupt junctions is considered. Theoretical characteristics are calculated for ideal, abrupt junctions. The possibilities of fabrication by alloying and epitaxial growth are briefly discussed.
ABSTRACTS ON ELECTRONICS RELIABILITY AND MICROMIN[ATURIZATION
Diffusion length measurement by means of ionizing radiation. W. ROSENWEIG, Bell Syst. Tech. 97., Sept. 1962. Minority carrier diffusion lengths in junction containing semiconductor material may be determined by measuring the penetrating-radiation-induced short circuit current. A note on silicon oxide film thickness. H. M. ROBERTSON,J. E. MCNAMARAand R. M. WARNER,Jr., 97. AppL Phys., Sept. 1962. Standard interferometric techniques can be used to measure thickness of an unmetallized silicon oxide film by employing the expression Y ~ a/(n-- l ) where a is the apparent step height and n the index of refraction of the film.
Future trends in professional component development. D. H. ROBERTS, B. L. H. WILSON, H. CRYSTALand J. R. ACTON, Brit. Commun. Electron., June 1963, p. 434-. The general tendency is for all electronic components to lean heavily upon techniques of solid state physics. Probably the most striking example is the silicon solid circuit. N e w microwave techniques in surface recombination and lifetime studies. H. JACOBS, F. A. BRAND, J. D. MEINDL, S. WEITZ, R. BENJAMINand D. A. HOLMES, Proc. I.E.E.E., April 1963, p. 581. A new method of measurement of recombination effects in semiconductors is described. Germanium and silicon slabs are prepared to fill the cross section of a waveguide and changes in microwave transmission as a function of conductivity of the semiconductoi" provide a direct measurement of lifetime. It is shown that under specific conditions of thickness of the sample a linear relationship exists between the transmitted power and the conductivity, even when the conductivity approaches the value of the product of angular frequency and permittivity. Furthermore, the new technique of lifetime measurement is simpler than previously described microwave and conventional d.c. methods and can be used to cover a broader range of conductivities. Experimental data are given to illustrate the principles. Designing diffused integrated circuit resistors. H. DICKEN, Electron. Ind., 21, No. 10, 88 (1962). Brief technological information is given on design of integrated resistors by diffusing a very thin layer of p- or n-impurity into silicon substrate of opposite polarity. Formulae are quoted for resistivity in terms of charges, concentrations and mobilities. Non-linear features are indicated, requiring precautions in circuit atiplications; two typical examples of these are briefly described and illustrated. Compatible techniques for integrated circuits. Components & Materials, May 3, 1963, p. 82. Describes a programme to develop compatible techniques for fabrication of complete integrated circuit functions utilizing semiconductor thin film and other solid-state technologies as required. A unified treatment of semiconductor boundary value problems. D. L. SCHARFETTER,R. W. LADE and A. G. JORDAN, Proc. I.E.E.E., ED-10, No. 1, Jan. 1963, p. 35. A unified approach to the solution of semiconductor boundary value problems is presented. The terminal voltage (including bulk drops) is derived by taking the total current as the independent variable. At semiconductor interfaces relationships between potential drops and carrier concentrations in the neutral regions are reviewed in terms of both the electrostatic and electrochemical potentials. The terminal voltage is expressed in terms of either the electrostatic or electrochemical potentials. Examples are presented to illustrate the techniques presented in this paper in terms of the familiar R P - N R and not so familiar RvNR diodes. On multiplication and avalanche breakdown in exponentially retrograded silicon P - N junctions. H. C. NATHANSON,Proc. I.E.E.E., ED-10, No. 1, Jan. 1963, p. 44-. An analysis of avalanche breakdown in exponentially retrograded p-n junctions results in simple criteria for avoiding breakdown in such structures. Breakdown voltages are shown to be extremely dependent on the surface concentration and grading constant of the retrograded region. The effect of background resistivity on breakdown is also analysed. Unusual saturation effects in the multiplication voltage curves of retrograded p-n diodes aie predicted theoretically. Experimental results point towards a confirmation of this theory.
Junction capacitance switches. G. ADAM, Proc. I.E.E.E., ED-10, No. 1, Jan. 1963, p. 51. The design of junction capacitance switches consisting of a combination of abrupt junctions is considered. Theoretical characteristics are calculated for ideal, abrupt junctions. The possibilities of fabrication by alloying and epitaxial growth are briefly discussed.