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Oxidation of silicon carbide in the temperature range 1200 to 1500°C.
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Abstract 195
atmospheres. At this pressure the conductivity is a minimum. This effect is increased as the iron content is increased and is almost absent in the purest samples. The conductivity is electronic rather than ionic and the number o f charge carriers is controlled by the number of lattice vacancies. The dependence of conductivity on oxygen pressure may be satisfactorily explained by changes in stoichiometry and thus lattice defects in magnesium oxide. These changes in stoichio-
metry are larger when the magnesium oxide is contaminated with a variable valence impurity like iron than when it is pure. (Author) S. P. Mitoff, J. Chem. Phys., 31, 1261-1269, Nov. 1959. 49 • 37 Oxidation of Silicon Carbide in the Temperature Range 1200 to 1500% See Abstract No. 145.
Abstract 195
atmospheres. At this pressure the conductivity is a minimum. This effect is increased as the iron content is increased and is almost absent in the purest samples. The conductivity is electronic rather than ionic and the number o f charge carriers is controlled by the number of lattice vacancies. The dependence of conductivity on oxygen pressure may be satisfactorily explained by changes in stoichiometry and thus lattice defects in magnesium oxide. These changes in stoichio-
metry are larger when the magnesium oxide is contaminated with a variable valence impurity like iron than when it is pure. (Author) S. P. Mitoff, J. Chem. Phys., 31, 1261-1269, Nov. 1959. 49 • 37 Oxidation of Silicon Carbide in the Temperature Range 1200 to 1500% See Abstract No. 145.