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Photoluminescence and excitation spectroscopy in coupled GaAs-Ga(Al)As quantum wells
A262 492
Surface Science 142 (1984) 492-497 North-Holland, Amsterdam
INVESTIGATION 2D ELECTRON A. P I N C Z U K
OF OPTICAL
PROCESSES
IN A SEMICONDUCTOR
PLASMA
and Jagdeep SHAH
Bell Laboratories, Holmdel, New Jersey 07733, USA and H.L. STORMER,
R.C. MILLER,
A.C. GOSSARD
a n d W. W I E G M A N N
Bell Laboratories. Murray Hill, New Jersey 07974, USA Received 12 July 1983; accepted'for publication 6 September 1983 We have studied intrinsic optical emission and excitation processes associated with 2D plasmas in modulation-doped GaAs-(A1Ga)As quantum-well heterostructures. The emission spectra indicate considerable energy gap renormalizations, assigned to many-body interactions, and large breakdown of the parity selection rule for the optical matrix element in quantum-wells. In spite of the high electron density, in excitation spectra we find evidence of final state electron-hole interactions.
498
Surface Science 142 (1984) 498-503 North-Holland, Amsterdam
PHOTOLUMINESCENCE AND EXCITATION SPECTROSCOPY COUPLED GaAs-Ga(AI)As QUANTUM WELLS C.DELALANDE,
U.O. Z I E M E L I S , G. B A S T A R D
IN
a n d M. V O O S
Groupe de Physique des Solides de l'Ecole Normale Supbrieure *, 24 Rue Lhomond, F-75231 Paris Cedex 05, France and A.C. GOSSARD
a n d W. W I E G M A N N
Bell Laboratories, Murray Hill, New Jersey 07974, USA Received 3 July 1983; accepted for publication 6 September 1983 We address the subject of virtual bound states (resonances) in a coupled quantum well, GaAs-Ga(Al)As structure grown by molecular beam epitaxy. The behaviour of bound hole states and hole resonances is calculated in the envelope function approach for a double well system with well (GaAs) widths ranging from 0 to 200 ,~ and a fixed barrier (Ga0.s4A10.16As) width of 12 ,~, taking into account band non-parabolicity and the spin-orbit energies of the host materials. Experimental results based on excitation spectroscopy measurements and pertaining to the existence of a transition involving a virtual bound hole state are presented for a system consisting of 40 periods of two 45 ,~ GaAs wells separated by 12 A Ga0.84As0.16As barriers. We also discuss briefly the evolution of the photoluminescence and excitation spectra in the 2 to 40 K temperature range.
Surface Science 142 (1984) 492-497 North-Holland, Amsterdam
INVESTIGATION 2D ELECTRON A. P I N C Z U K
OF OPTICAL
PROCESSES
IN A SEMICONDUCTOR
PLASMA
and Jagdeep SHAH
Bell Laboratories, Holmdel, New Jersey 07733, USA and H.L. STORMER,
R.C. MILLER,
A.C. GOSSARD
a n d W. W I E G M A N N
Bell Laboratories. Murray Hill, New Jersey 07974, USA Received 12 July 1983; accepted'for publication 6 September 1983 We have studied intrinsic optical emission and excitation processes associated with 2D plasmas in modulation-doped GaAs-(A1Ga)As quantum-well heterostructures. The emission spectra indicate considerable energy gap renormalizations, assigned to many-body interactions, and large breakdown of the parity selection rule for the optical matrix element in quantum-wells. In spite of the high electron density, in excitation spectra we find evidence of final state electron-hole interactions.
498
Surface Science 142 (1984) 498-503 North-Holland, Amsterdam
PHOTOLUMINESCENCE AND EXCITATION SPECTROSCOPY COUPLED GaAs-Ga(AI)As QUANTUM WELLS C.DELALANDE,
U.O. Z I E M E L I S , G. B A S T A R D
IN
a n d M. V O O S
Groupe de Physique des Solides de l'Ecole Normale Supbrieure *, 24 Rue Lhomond, F-75231 Paris Cedex 05, France and A.C. GOSSARD
a n d W. W I E G M A N N
Bell Laboratories, Murray Hill, New Jersey 07974, USA Received 3 July 1983; accepted for publication 6 September 1983 We address the subject of virtual bound states (resonances) in a coupled quantum well, GaAs-Ga(Al)As structure grown by molecular beam epitaxy. The behaviour of bound hole states and hole resonances is calculated in the envelope function approach for a double well system with well (GaAs) widths ranging from 0 to 200 ,~ and a fixed barrier (Ga0.s4A10.16As) width of 12 ,~, taking into account band non-parabolicity and the spin-orbit energies of the host materials. Experimental results based on excitation spectroscopy measurements and pertaining to the existence of a transition involving a virtual bound hole state are presented for a system consisting of 40 periods of two 45 ,~ GaAs wells separated by 12 A Ga0.84As0.16As barriers. We also discuss briefly the evolution of the photoluminescence and excitation spectra in the 2 to 40 K temperature range.