Planar airbridge RF terminal MEMS switch

and/or

Patents

three

response actuation.

Semiconductor capacitor Applicant:

device and Electronics

actuated

relates

for

dcvicc

of

capacitor

of

a

film

from

separation when

embodiment,

due

of

film during process.

a

The

manufacturing

includes: of

a

a lower

capacitor

of Over

device formed

substrate;

hemispherical

graincd

on an exposed

surface

stabilizing

on

to prevent

area of the HSG

having

device

includes

nonparallel

greater

a

thermal

actuation, thereof

nonparallel

electrode

of

a capacitor

semiconductor procrss the

chamber

HSG

film.

capacitor

includes

formed

over

substrate,

of

the

device and a second which

stabilizes

medial

The

resultant

underlying

a lower electrode

thermally

semiconductor

provided

a

a stabilized

HS(;

film

that of moving

layer over the stabilied

HSG

three dimensions

dielectric

clcctrode

film,

over

the

layer.

in

substrate,

such

response

to

to

suspended

beam

the beam

to

arc arrays

in-plane

and out

motion

in all

may be achieved thermal

Hill, V.R. Dhulcr

Inc., USA

An

and

structures

provide

movement

@

Smart Materials

system and arrays that in one,

Bulletin

two

presrntcd switch throws

for which

By eliminating

metallization for fabricating reduced.

throws

includes

arc KF

multiple

and can hc fabricated

optical

the

abnormal

multiple a

II

Kong,

K.U.

R.R. Stokes,

Rhorania,

clamp

element

is fitted and

the

over a bar located

clamp

mrmhcn.

Patem number: L’S 6222‘952 Inuentors:

Lammcrt

hr

of the

members

f-‘rrb/icationhe:

M.D.

The

to

the length

is guided

between

I

a

spaced

arranged

along

fihre. The sensor

Patent number: US 62 183

fihre.

has three

members

fibre

Inuemors: A.M.

unit

clamped

introduces

of the

transducer clamp

to an

loss in the transmission

characteristics

single lcvcl of mctallization.

J.l? ‘liicu,

level which

a

such

fihre or fihre capable

measurable

poles using

Publication date: 17 April 200

of

that the fihrc is bent or curved

hctwccn

24 April 200

CR.

hloran.

1 W.(:.

Actuating device with multiple stable positions Appiicarrt: Continuum

Dynamics

using

* lletln

Inc., USA A mechanical moving

actuating

an

surface

least one tlexurr in

device

condition.

member

confined

mcmhcr

deformation

the

or

are

generated

by

mcmbcr.

member

deformed.

‘snaps’

stable positions in

mcmhcrs

can be

additional

stable

can

alloy

and is held

fl cxurc

used

provide

to

positions.

In one

the actuating

as a trailing or

edge

actuated

wires

using to

device is tab

tiltrotor

manually snap

to

‘I’he device

shape the

Breaking

news

industries

Features Technical articles on projects and developments around the world

Research Trends The latest research results published

in

the key journals

for a

hladc

I /rev vibration.\. bc

another

more

clcctrically

of the

between

In

each.

In Brief Related

is always elastically

it

Industry trends

force

Since

discrete,

reduce

the the

the

Business activities Technical developments

hydrodynamic

held

month

of

by elastic deformation

flexure

flcxurc

which

thcrcforc

aerodynamic surface,

is

to move

in

and

Next

News

the force gcncrated

positions,

device,

at

deformed

The flcxure against

or

includes

elastically

an

for

aerodynamic

hydrodynamic

used

an

of

switch

also allows

and multiple

application,

a process

is

is filled to an

is greatly

the

by a sensor

unit which

multiple

the switch

Moreover,

is detected

transducer

layers, the complexity

helicopter

fabricating

of

A measurand

part

gcncrall!

plant

stahlc

Applicant: TRW

(MEMS)

the

of

forming

switch

the

Applicant: MCNC, microclcctromechanical

The

University UK

elcmcnt

single

the device into one of a plurality

Planar airbridge RF terminal MEMS switch RF switch

as the

Strathclyde,

by its elastic

Movement of MEMS actuator structures/arrays at

Applicant:

a

Jr

Optical fibre transducer

The

pads are all

is in a plant

parallel

firmly

looks

the

such that deflection

embodiment,

patent

as well

layer.

configured

Publication date: 17 April 200 1

This

opcratc

with

Patent number: US 62 18762

USA

to

beam

Patent number: US 62 14689

Inventors: LA

airbridged

electrostatically.

Publication date:

Inventors: J.K. Lim, J.S. Park

the

the

actuation.

IO April 200 I

disposed

thereby

Hybrid

selective

adjacent

arc

of

combine

that

Publication date: 24 April 200 I

pads

movable

structures

stable

Patent number: US 6220550

adjacent

respect

from

actuated

of plane,

an upper

in opposite with

substrate.

a dielectric

and

arch

to

medial

separation

over the lower electrode.

even

the

portions

capable

with by the

by

directions

the

in

In response

to the underlying altering

and

beams

d&cd

amounts.

portions

One

directions

various

Michie

portion

arched

substrate

a

lower

the

first

portions

to the plant

on

a

arched

arched

respect

for formation

film

than the

substrate.

opposed

first process chamber

is

altering

comhines

medial

of

HSG

degree

thermal

underlying

for manufacturing

semiconductor

medial

of the medial

embodiment

to

their

Inventor; R.M. McKillip,

control

configuration

the

beam

of the thermal

from the underlying

of

cleaning.

the arched

thereby

separation

second

HSG

the

to a greater

beam,

film

film

of the

subsequent

The apparatus

end portions

of the lower

to the abrasion

film during

arched

a

the decrcasc

of

respect

In response

actuation,

portion

in a

by

disposed

into

more

substrate. In

with

defined

substrate.

a

film

the HSG

plane

thermal

crossbeam

at least one

direction

the

a

a

forming (HSG)

nonparallel to

underlying a

forming

structure

the surface

to the

a the

beam ih arched

beam

an airhridge

to one or more metal traces. One or

mctallization

to

actuated.

arched

semiconductor

the

the

thermally

thermal

device

arched

a way that

suspended

fabricated

arches and alters its

another

semiconductor

in order

in such

portion

of the

cleaning

electrode;

medial

includes

metal traces and contact

One

an

mcmhcrs positions.

switch

suspended

substrate

connected

only a single layer of mctallization. The

switch

in a plane

provides

operably

crossbeam

and

two dimensions.

of the capacitor

electrode

specific

beam

graincd

structures

a lower

subsequent

capacitor

thermally

of moving

and/or

me

embodiment

of the surface

of the HSG

method

and

on

semiconductor abrasion

in

of

are operably

to the underlying

a

and method

formed

parallel

a

semiconductor

the decrease

electrode

due

and

of a hemispherical

(HSC;)

a

manufacturing

device. The apparatus

arca

an

manufacturing

semiconductor

prcvcnt

to

pairs

beams

to create

arrays capable

invention

method

arched

of

arc provided.

embodiment,

intcrconnccted

Samsung

apparatus

one

in thermal

amounts

displaccmcnt

thermal

Co., Ltd, Korea This

selective

Significant

scalable In

dimensions

to

or

Patents Recently published US and WO patents

mcmor) flcxure

July 2001