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Resonant Brillouin scattering by acoustoelectrically amplifield phonons in CdSe
Vol 17.No 7
ABSTRACTS OF PAPERS TO APPEAR IN J PHYS CHEM. SOLIDS
V
* 8
ISOTOPE EFFECTS IN RAMAN SPECTRA OF CRYSTALLINE ALKALI-METAL CHLORATES AND BROMATES
RESONANT BRILLOUIN SCATTERING BY ACOUSTOELECTRICALLY AMPLIFIED PHONONS IN CdSe
10
J B. Bates and H.D Stldham, Sohd State DIMsion, Oak hdge National Laboratory, Oak &dge, TN 37830, U.S A Halogen and oxygen atom Isotope effects have been observed m Raman spectra of smgle crystal NaC103, KCIOJ, NaBrOB, and KBr03 Onentatlonal sphttmg of 35Cl‘602 lsO- ion vlbratlonal modes was observed m KC103 Sphttmg of the v1 mode of %r and ” Br isotopes of smgly substituted “0 and ‘80 bromate ions 111NaBr03 and KBr031s on the order of 1 5 cm-’ m agreement with a calculation of isotopic frequencies However, the predicted sphttmg between vl of the major isotopes, 79Br160; and 81Br’60;, was not observed, and the results of a band contour analysis suggest that a smgle k = 0 phonon 1s denved from the totally symmetnc stretchmg mode of both species Recewed
9
K Yamamoto, K Mlsawa, H Shlmlzu and K Abe, Department of Electronic Engneermg, Kobe Uruverslty, Rokko, Nada, Kobe, Japan The dispersion of Bnlloum scattering efficiency from the acoustoelectrlcally amplified phonon flux m CdSe has been measured m the range 1 37-l 65 eV The dispersion curve shows enhancement and cancellation slmdar to those of GaAs, CdS and ZnO, and 1s m a good agreement with molfied Loudon theory mcludmg exclton effects Recerved 21 Apnl 1975
11 l
D C Look and J.C Manthuruthll, Phystcs Department, University of Dayton, Dayton, OH 45469, U S A
24 Apnll975
ELECTRONIC POLARIZABILITIES AND SIZED OF IONS IN ANBleN TYPE SEMICONDUCTORS Jai Shanker and S K Agarwal, Department of Physics, Agra College, Agra-282002, In&a.
Electronic polanzabtitles and sizes of ions m type semiconductors (PbS, PbSe, PbTe and SnTe) have been deduced m the present study The free ion polarizabtities of Sn2+and Pb2*ions are estimated approxtmately followmg the procedure of Pauhng The effect of crystalhne potential is then estunated on free cation polanzabhtles An empmcal relation between loruc radu and polanzabllrtles has been apphed to deduce the ~omc sizes and amon polanzabtitles The calculated molecular electromc polamablimes agree well with the expenmental values The vatlatlon of dielectric constant wth stram has also been estunated 111each crystal and the results are explamed m terms of the optical amsotropy parameter
ANBleN
Recewed 10 December Rewed 5 May 1975
ELECTRON AND HOLE CONDUCTIVITY IN CuInS2
1974
Single crystals of CuInS2 have been grown from the melt and annealed m In or S to produce good nor p-type conductlvlty, respectively, Two donor levels, one shallow and one deep (0 35 eV), and one acceptor level at 0 15 eV are identified. The hole-mobdity data are best fitted with an effective mass rn3:= 1 3 m,, which can be explamed by simple, two band k-p theory if the valence band has appreciable d character Above 300”K, the hole mobhty falls rapidly, evldently due to multxband conduction and/or mterband scattenng between the nondegenerate and degenerate valence bands The conduction band moblhty appears to be dommated, m many samples, by large concentrations (> 1018cm-‘) of native donors and acceptors, which are closely compensated Recerved 11 June 1975
12
A STATISTICAL MECHANICAL MODEL FOR SOLID SOLUTIONS OF HYDROGEN IN THE METALS NIOBIUM, VANADIUM AND TANTALUM Rex B McLellan, Department of Mechanical
ABSTRACTS OF PAPERS TO APPEAR IN J PHYS CHEM. SOLIDS
V
* 8
ISOTOPE EFFECTS IN RAMAN SPECTRA OF CRYSTALLINE ALKALI-METAL CHLORATES AND BROMATES
RESONANT BRILLOUIN SCATTERING BY ACOUSTOELECTRICALLY AMPLIFIED PHONONS IN CdSe
10
J B. Bates and H.D Stldham, Sohd State DIMsion, Oak hdge National Laboratory, Oak &dge, TN 37830, U.S A Halogen and oxygen atom Isotope effects have been observed m Raman spectra of smgle crystal NaC103, KCIOJ, NaBrOB, and KBr03 Onentatlonal sphttmg of 35Cl‘602 lsO- ion vlbratlonal modes was observed m KC103 Sphttmg of the v1 mode of %r and ” Br isotopes of smgly substituted “0 and ‘80 bromate ions 111NaBr03 and KBr031s on the order of 1 5 cm-’ m agreement with a calculation of isotopic frequencies However, the predicted sphttmg between vl of the major isotopes, 79Br160; and 81Br’60;, was not observed, and the results of a band contour analysis suggest that a smgle k = 0 phonon 1s denved from the totally symmetnc stretchmg mode of both species Recewed
9
K Yamamoto, K Mlsawa, H Shlmlzu and K Abe, Department of Electronic Engneermg, Kobe Uruverslty, Rokko, Nada, Kobe, Japan The dispersion of Bnlloum scattering efficiency from the acoustoelectrlcally amplified phonon flux m CdSe has been measured m the range 1 37-l 65 eV The dispersion curve shows enhancement and cancellation slmdar to those of GaAs, CdS and ZnO, and 1s m a good agreement with molfied Loudon theory mcludmg exclton effects Recerved 21 Apnl 1975
11 l
D C Look and J.C Manthuruthll, Phystcs Department, University of Dayton, Dayton, OH 45469, U S A
24 Apnll975
ELECTRONIC POLARIZABILITIES AND SIZED OF IONS IN ANBleN TYPE SEMICONDUCTORS Jai Shanker and S K Agarwal, Department of Physics, Agra College, Agra-282002, In&a.
Electronic polanzabtitles and sizes of ions m type semiconductors (PbS, PbSe, PbTe and SnTe) have been deduced m the present study The free ion polarizabtities of Sn2+and Pb2*ions are estimated approxtmately followmg the procedure of Pauhng The effect of crystalhne potential is then estunated on free cation polanzabhtles An empmcal relation between loruc radu and polanzabllrtles has been apphed to deduce the ~omc sizes and amon polanzabtitles The calculated molecular electromc polamablimes agree well with the expenmental values The vatlatlon of dielectric constant wth stram has also been estunated 111each crystal and the results are explamed m terms of the optical amsotropy parameter
ANBleN
Recewed 10 December Rewed 5 May 1975
ELECTRON AND HOLE CONDUCTIVITY IN CuInS2
1974
Single crystals of CuInS2 have been grown from the melt and annealed m In or S to produce good nor p-type conductlvlty, respectively, Two donor levels, one shallow and one deep (0 35 eV), and one acceptor level at 0 15 eV are identified. The hole-mobdity data are best fitted with an effective mass rn3:= 1 3 m,, which can be explamed by simple, two band k-p theory if the valence band has appreciable d character Above 300”K, the hole mobhty falls rapidly, evldently due to multxband conduction and/or mterband scattenng between the nondegenerate and degenerate valence bands The conduction band moblhty appears to be dommated, m many samples, by large concentrations (> 1018cm-‘) of native donors and acceptors, which are closely compensated Recerved 11 June 1975
12
A STATISTICAL MECHANICAL MODEL FOR SOLID SOLUTIONS OF HYDROGEN IN THE METALS NIOBIUM, VANADIUM AND TANTALUM Rex B McLellan, Department of Mechanical