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SAM studies on high-temperature annealing of vanadium thin films on oxidized silicon wafers
Classified abstracts 5705
as a preliminary correction in the application of semiquantitative analysis of the sulfide films. Surfaces of copper, copper sulfide and copper oxide on copper were analysed by using both dynamic (profiling) and quasi-static SIMS. Relative enhancement factors for copper ion yields were determined for both types of analysis. The ion yield increases in going from metal to sulfide to oxide. The enhancement factor for SIMS profiling of the sulfide films was found to he nearly constant for sulphur concentration between 30% and 10%. SIMS analysis has been performed on a sulfide film formed on a copper-zinc alloy. The enhancement factors were shown to correctly scale the signal from the sulfide film relative to that from the metal substrate, compared to simultaneous AES signal strengths. G E Hammer, J Vat Sci Tech&, 20 (3), 1982,403405.
426
37 5705. SAM atndieaon high-temperaturesnnealing of vanadiumthin Bhns on
oxidixad s.ilkoa wafers. (USA) Vanadium thin hlms were deposited on oxidized silicon wafers. Their solid-state reactions were studied by scanning Auger microscopy (SAM). It was found that when annealing at temperatures above looo”C, concentric ring structures were observed on the surface. These ring structures consist of circular grooves with shallow depth all the way to the substrate Si. Between the circular grooves, vanadium silicides composed mostly of VSi, were formed from the reactions between the V thin film and the oxidized Si substrate. (China) Jiann-Ruey Cben et al, J Vat Sci Tech&, M (3), 1982, 804806.
as a preliminary correction in the application of semiquantitative analysis of the sulfide films. Surfaces of copper, copper sulfide and copper oxide on copper were analysed by using both dynamic (profiling) and quasi-static SIMS. Relative enhancement factors for copper ion yields were determined for both types of analysis. The ion yield increases in going from metal to sulfide to oxide. The enhancement factor for SIMS profiling of the sulfide films was found to he nearly constant for sulphur concentration between 30% and 10%. SIMS analysis has been performed on a sulfide film formed on a copper-zinc alloy. The enhancement factors were shown to correctly scale the signal from the sulfide film relative to that from the metal substrate, compared to simultaneous AES signal strengths. G E Hammer, J Vat Sci Tech&, 20 (3), 1982,403405.
426
37 5705. SAM atndieaon high-temperaturesnnealing of vanadiumthin Bhns on
oxidixad s.ilkoa wafers. (USA) Vanadium thin hlms were deposited on oxidized silicon wafers. Their solid-state reactions were studied by scanning Auger microscopy (SAM). It was found that when annealing at temperatures above looo”C, concentric ring structures were observed on the surface. These ring structures consist of circular grooves with shallow depth all the way to the substrate Si. Between the circular grooves, vanadium silicides composed mostly of VSi, were formed from the reactions between the V thin film and the oxidized Si substrate. (China) Jiann-Ruey Cben et al, J Vat Sci Tech&, M (3), 1982, 804806.