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Secondary ion mass spectrometry — principles & applications
The 2nd Edition is basically a reference work, t h o u g h some of its reports m a y be read as overviews of selected areas of technology. It presents a n unrivalled q u a n t i t y of GaAs (and some A1GaAs) numeric data, well tabulated a n d systematically organised. The book is fully subject-indexed a n d has a very useful list of acronyms; it is perhaps not too surprising that there are so many. Some aspects are treated in greater detail, as merits their importance, a n d certain specialist areas are made more accessible via overviews by experts. These cover fabrication a n d device types for all digital, analogue a n d opto technologies. Each report has extensive references - the book is worth its price tag for this aspect alone. Some articles are carried over from the 1st Edition a n d this is sensible because these are mainly hard data. Nevertheless, every article, including its references, has been e x a m i n e d by p r o m i n e n t experts in the field a n d updated/revised as necessary. This work is also clearly aimed at the materials scientist
Most likely, the veteran or novice will not have a SIMS i n s t r u m e n t in-house, a n d will use a contract analysis service. To get the most from t h a t you'll need to plan experiments in advance to include a SIMS analysis. This book can greatly help this procedure by explaining the t e c h n i q u e not merely t h r o u g h its physics and chemistry but best of all t h r o u g h "worked examples". After short explanations a n d history of SIMS, the book delves into the experimental parameters - sputter rate, ionisation a n d so on. It addresses directly the problems too, importantly (for those with good SI LEC samples) that of sample charging and the means to overcome this. The matrix effects and molecular emission are also dealt with before getting into the theoretical models and the i n s t r u m e n t a t i o n itself. Given the broad range of i n s t r u m e n t a t i o n and its continuing rapid development, this is perforce an overview of static, dynamic S1MS as well as laser types, etc. It compares the performance of the different mass spec types and so on but concludes that the role of the "machine-analysis interface, normally termed the operator, is still crucial". The next five chapters get to grips with the principal SIMS techniques with explanation and d e m o n s t r a t i o n t h r o u g h a wide variety of materials (not
Properties of GaAs 2nd Edition !
'JVhile the 1986 1st Edition proved to be a runaway success and became widely used by GaAs workers worldwide, in the interim, progress has made a new ,~dition essential and required some expansion of ,:overage. Herein there are some 180 specially commissioned articles by experts from the USA, Europe ,and Japan. The formidable (800 pages, weighing in at 5 I
rather t h a n the IC designer. For 1he scientist, here in one place are tabulated a n d examined the physical constants, resistivities, carrier data, mobility, diffusion, b a n d structure, optical behaviour, PL, defects and deep ]evels, interfaces and contacts of GaAs. The publisher says that about 70 completely new articles have been added, particularly in some subject areas of high current interest: het-
eroepitaxy, AIGaAs, OEICs, etc. Overall, this reviewer was impressed but has some reservations. The actual pages of text are somewhat basic, being interspersed with a profusion of tables but n o illustrations. No d o u b t this is all d o w n to economics because production of such a tome for £160 somet h i n g has to be sacrificed. This is a pity because even t h o u g h it is a work of reference, in the
Secondary Ion Mass Spectrometry Principles & Applications Edited by John C Vickerman, Alan Brown and Nicola M Reed published by Oxford Science Publications. SIMS is probably one of the most useful group of techniques to the III-V investigator; able, quite readily, to tell you much about the success, or not, of your l~rocessing. It is however, a technique which may not be as well understood as it should be; there are SIMS :scientists and there are the rest some might say! As with any analytical technique, you need expertise to get the most out of your results, indeed you need to appreciate iits limitations before you even start. This book is a very ,~seful guide to the technique and its variations which :succeeds in its premise: "This book seeks to introduce SIMS....The aim is to enable those wanting to exploit the technique themselves to approach the practical use of SIMS or its data with understanding." Oxford University Press Distr. Services, Corby, UK. Tel: 44 536 741519. Price (UK): £45. ISBN 855625X. I
u s t semiconductor). Dynamic SIMS is introduced with a thorough appreciation of the analyrical process (applied to an VIBE Si sample) and subsequent quantification of data. It t h e n 3oints out practical details iiuch as Si/GaAs m e m o r y effects and the need for careful :~cheduling - d e p t h resolution, beam and atomic mixing,
charging and multi-layer analysis (lnGaAs epi o n InP). Static SIMS merits two chapters, the first addressing a variety of metal, organic and other surfaces in terms of reactivity, oxidation a n d chemisorption. Much of the second of these deals with polymer samples, treating the issues of charging and neutralisation, compares
sections m e a n t to be read as overviews to update the novitiate, some diagrams a n d photos would have been useful. As Confucius said, o n e picture is w o r t h a t h o u s a n d words. Inevitably, t h e editor obviously h a d to draw the line somewhere o n just what he had to leave out (one o v e r w h e l m i n g impression you get from this book is just h o w m u c h data has been generated in only a few decades a n d coordinating the production is a n impressive task in itself). So whilst it catalogues m u c h excellent data for workers in etching, epitaxy, crystal growth, etc, d o n ' t expect m u c h o n device parameters, CAD, RF a n d so on. These observations aside, this is a m o n u m e n t a l work t h a t every self-respecting GaAs worker should have o n his shelf a n d at £160 it's a real bargain. It stands as a testament to the m a n y years of hard lab work by m a n y teams in the international GaAs industry. We can also look forward to an INSPEC volu m e o n InP (and related alloys) to be published later this year. This reviewer expects t h a t this will equal the success of the GaAs 2nd Edition. •
ToF vs quad systems, primary beams and spectral interpretation. More importantly for this readership, Chapter 8 deals with SIMS imaging: the use of ion microprobe/microscopy, explaining the sometimes confusion of terms a n d dealing with the issue of sensitivity vs damage. The major topic of contrast is well illustrated with beautiful images from contaminated lC structures (if they're OK, they're usually boring to look at!). Finally, SIMS-related techniques - SNMS, electron/plasma/laser post ionisation, 252Cf PDMS and laser desorption MSare highlighted. This is perforce a short, but very interesting chapter w h e t t i n g the reader's appetite for more (see the extensive references). This book is a n excellent introduction to the SIMS area a n d should find m u c h use in academia a n d industry alike. •
Most likely, the veteran or novice will not have a SIMS i n s t r u m e n t in-house, a n d will use a contract analysis service. To get the most from t h a t you'll need to plan experiments in advance to include a SIMS analysis. This book can greatly help this procedure by explaining the t e c h n i q u e not merely t h r o u g h its physics and chemistry but best of all t h r o u g h "worked examples". After short explanations a n d history of SIMS, the book delves into the experimental parameters - sputter rate, ionisation a n d so on. It addresses directly the problems too, importantly (for those with good SI LEC samples) that of sample charging and the means to overcome this. The matrix effects and molecular emission are also dealt with before getting into the theoretical models and the i n s t r u m e n t a t i o n itself. Given the broad range of i n s t r u m e n t a t i o n and its continuing rapid development, this is perforce an overview of static, dynamic S1MS as well as laser types, etc. It compares the performance of the different mass spec types and so on but concludes that the role of the "machine-analysis interface, normally termed the operator, is still crucial". The next five chapters get to grips with the principal SIMS techniques with explanation and d e m o n s t r a t i o n t h r o u g h a wide variety of materials (not
Properties of GaAs 2nd Edition !
'JVhile the 1986 1st Edition proved to be a runaway success and became widely used by GaAs workers worldwide, in the interim, progress has made a new ,~dition essential and required some expansion of ,:overage. Herein there are some 180 specially commissioned articles by experts from the USA, Europe ,and Japan. The formidable (800 pages, weighing in at 5 I
rather t h a n the IC designer. For 1he scientist, here in one place are tabulated a n d examined the physical constants, resistivities, carrier data, mobility, diffusion, b a n d structure, optical behaviour, PL, defects and deep ]evels, interfaces and contacts of GaAs. The publisher says that about 70 completely new articles have been added, particularly in some subject areas of high current interest: het-
eroepitaxy, AIGaAs, OEICs, etc. Overall, this reviewer was impressed but has some reservations. The actual pages of text are somewhat basic, being interspersed with a profusion of tables but n o illustrations. No d o u b t this is all d o w n to economics because production of such a tome for £160 somet h i n g has to be sacrificed. This is a pity because even t h o u g h it is a work of reference, in the
Secondary Ion Mass Spectrometry Principles & Applications Edited by John C Vickerman, Alan Brown and Nicola M Reed published by Oxford Science Publications. SIMS is probably one of the most useful group of techniques to the III-V investigator; able, quite readily, to tell you much about the success, or not, of your l~rocessing. It is however, a technique which may not be as well understood as it should be; there are SIMS :scientists and there are the rest some might say! As with any analytical technique, you need expertise to get the most out of your results, indeed you need to appreciate iits limitations before you even start. This book is a very ,~seful guide to the technique and its variations which :succeeds in its premise: "This book seeks to introduce SIMS....The aim is to enable those wanting to exploit the technique themselves to approach the practical use of SIMS or its data with understanding." Oxford University Press Distr. Services, Corby, UK. Tel: 44 536 741519. Price (UK): £45. ISBN 855625X. I
u s t semiconductor). Dynamic SIMS is introduced with a thorough appreciation of the analyrical process (applied to an VIBE Si sample) and subsequent quantification of data. It t h e n 3oints out practical details iiuch as Si/GaAs m e m o r y effects and the need for careful :~cheduling - d e p t h resolution, beam and atomic mixing,
charging and multi-layer analysis (lnGaAs epi o n InP). Static SIMS merits two chapters, the first addressing a variety of metal, organic and other surfaces in terms of reactivity, oxidation a n d chemisorption. Much of the second of these deals with polymer samples, treating the issues of charging and neutralisation, compares
sections m e a n t to be read as overviews to update the novitiate, some diagrams a n d photos would have been useful. As Confucius said, o n e picture is w o r t h a t h o u s a n d words. Inevitably, t h e editor obviously h a d to draw the line somewhere o n just what he had to leave out (one o v e r w h e l m i n g impression you get from this book is just h o w m u c h data has been generated in only a few decades a n d coordinating the production is a n impressive task in itself). So whilst it catalogues m u c h excellent data for workers in etching, epitaxy, crystal growth, etc, d o n ' t expect m u c h o n device parameters, CAD, RF a n d so on. These observations aside, this is a m o n u m e n t a l work t h a t every self-respecting GaAs worker should have o n his shelf a n d at £160 it's a real bargain. It stands as a testament to the m a n y years of hard lab work by m a n y teams in the international GaAs industry. We can also look forward to an INSPEC volu m e o n InP (and related alloys) to be published later this year. This reviewer expects t h a t this will equal the success of the GaAs 2nd Edition. •
ToF vs quad systems, primary beams and spectral interpretation. More importantly for this readership, Chapter 8 deals with SIMS imaging: the use of ion microprobe/microscopy, explaining the sometimes confusion of terms a n d dealing with the issue of sensitivity vs damage. The major topic of contrast is well illustrated with beautiful images from contaminated lC structures (if they're OK, they're usually boring to look at!). Finally, SIMS-related techniques - SNMS, electron/plasma/laser post ionisation, 252Cf PDMS and laser desorption MSare highlighted. This is perforce a short, but very interesting chapter w h e t t i n g the reader's appetite for more (see the extensive references). This book is a n excellent introduction to the SIMS area a n d should find m u c h use in academia a n d industry alike. •