The 2653 polynomial generator and checker

600

World Abstracts on Microelectronlcs and Reliability

Hard-disk based development systems with multiprocessor emulation. G BRISTOW Microelectron Rehab 21 (6), 783 (19811 An entirely new series of hard-disk based development systems is introduced, with particular reference to multiply In-circuit emulation stations for multi-user or multiprocessing configurations Phoenix 1--a low cost development system. M J WALSH Mlcroelectron Rehab 21 (6), 787 (1981) The background philosophy and technical requirements of a low cost development system with universality are &scussed The evolution of such a system which gives universal support for most microprocessors IS explained together with a discussion of the technical development of the product The 2653 polynomial generator and checker. ALEX GOLDBEGGER Mtcroelectron Rehab 21 (61, 825 (1981) The 2653 P G C device is discussed, which can provide error checking when data IS being transferred via a communications link The device can operate at speeds up to 500,000 characters per second and because It includes built-in intelligence it can detect special characters and character sequences A high-performance 16-bit bipolar microprocessor--The Am 29116. WILLIAM J HARMON, JR and WARREN K MILLER Mlcroelectron Rellab 21 (61, 851 (19811 This paper describes the architecture and design concepts of the AM29116 microprogrammable bipolar microprocessor with lOOns cycle

7. S E M I C O N D U C T O R

INTEGRATED

Alteration of diffusion profiles in semiconductors due to p-n junctions. P J ANTHONY Sohd-St Electron 25(101, 1003 (19821 Concentration profiles of diffusing species in semiconductors are calculated including the effects of the electric fields at p-n junctions The junction electric field can significantly alter diffusion behavior near the junction at the growth temperature, and thus affect dopant uniformity and junction placement for some commonly occurring epttaxlal growth conditions The junction electric field affects diffusion m the same manner as the internal electric field that results from a dopant concentration gradient The field can produce diffusion profiles with either enhanced or retarded diffusion rates at thcjunction and pde-up or depletion of the diffusing species near the junction Several experimental examples for diffusion of Mg across a p-n junction in (AI, Ga), As during growth by liquid phase epltaxy are presented Theory of concentration profiling technique for semiconductors with many deep levels. GuO-GANG QIN and C T SAH Sohd-St Electron 25(10), 1045 (1982) A gcncral theory is developed to obtain the spatial variations of the concentrations of the deep levels and free carrier from constant-capacitance voltage-transient (CCVT) measurements on semiconductor junctions containing many deep energy levels In order to measure the deep-level densities near the junction boundary, two methods of edge region correction are also analyzed the integral equation method and an experimental three-frequency capacitance-voltage method Conditions under which these methods are easily apphcable in experiments are discussed Applications of these methods are pubhshed elsewhere Semiconductor final test logistics and product disposRioning systems. ROBERT M BURGESS,KATHLEEN B KOENS and EMIL M PIGNETTI, JR I B M Jl Res Dev 26(5), 605 (19821 As product lines at the IBM East Flshkill plant have expanded in the last few years, and as the number of technologies and semiconductor wafer and module volumes have increased, more sophisticated software systems were introduced which not only drove test times downward, but also reduced the

time Systems throughput and design for tradeoffs are analysed and a typical application a high speed disc controller Is described Present and future parts for mIcroprogrammed controller design are also reviewed

A structured approach to the design of microprocessor apphcations software. F HALSALL Mtcroelectron Rehab 21 (6), 871 (19811 This paper presents a formal approach to the design and documentation of microprocessor applications software The approach adopted is known as the top-down design method This is now widely used and has been designed to overcome the major tradmonal problems of program readability and understandability These problems are very significant for manufacturers of software-based products since the need invariably arises to modify existing software, for example, to incorporate a new feature Ttus can be a very expensive and time consuming operation even if the adaptlon is to be performed by the original programmer, but more so when a different programmer IS involved Even copious comments alongside the program code, although helping readability, are not usually sufficient to provide good understandability T M S 9995 the power packed microcontroller. DAVE WOLLEN Mwroele~tron Rehab 21 (6), 793 (1981) The newest additions to the Texas 9900 family have been integrated with the central processor function thereby enabling 16 bit dedicated controller apphcations to be met with a m i n i m u m package count

CIRCUITS,

DEVICES

AND

MATERIALS

development time previously required to accommodate testing new technologies This paper discusses two such systems developed for the bipolar semiconductor line They are a final test logistics system which provides for computerlzed tracking of each device in the production line through both testing and diagnostic analysis, and an automatic product dlspositionlng system which immediately identifies shippable product batches after flow through the test sector or schedules the batches for additional diagnostic analysis

The detection of microcontaminants in semiconductor process fluids using an acoustic technology. DON L TOLLIVER,NIGEL DAVENPORT and LEIGH R ABTS Sohd St Technol, 116 (September 19821 Various methods of detecting solid particles in semiconductor process fluids are compared An acoustical technique that detects particles in clear, translucent or opaque fluids is described Calibration of the acoustic system is described, and data collected on D I water, HF, HzSO 4 and photoreslst before and after filtration are presented Oxygen incorporation and precipitation in Czochralskt-grown silicon. A MURGAI, W J PATRI(K, J COMBRONDE and J C FELIX I B M Jl Res Dev 26(5), 546 (1982) Oxygen incorporation is examined for growth of large-diameter (80-130ram) silicon single crystals by the Czochralskl method The primary gro'*th parameters affecting the oxygen conccntration in the crystals are shown to be the crystal-melt interface position within the hot zone and the rate of crucible rotation used Tight control of the oxygen concentration I-+_ 1 5 parts per million atomic (ppma) in the range of 25 4 0 p p m a (ASTM)] has been reproduclbly attained by programmed variation of these growth parameters The attainable oxygen concentrations may bc extended over a wider range (20 45 ppma) through slight modifications of the hot zones Wafers from the umform-oxygen-concenIratlon crystals are subjected to single-step and two-step annealing procedures (700-1100°C) for oxygen precipitation studies The rate of precipitation IS shown to depend on the lnlnal oxygen content and on the number of mitmlly unpopulated nucleation sites present