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The 64-K RAM: which way to refresh?
310
World Abstracts on Microelectronics and Reliability
6. MICROELECTRONICS--COMPONENTS, SYSTEMS AND EQUIPMENTS Single-chip n-MOS microcomputer processes signals in real time. M. E. HOF~ and MATT TOWNSEND. Electronics p. 105 (I March 1979). Analog inputs and outputs surround highspeed pipelining processor: user builds filters, oscillators, other analog systems with E-PROM software.
25 300:C temperature range. Temperature and pressure monitoring instruments using these circuits have been used for down-hole measurements in geothermal wells. Methods of fabrication, circuit performance, and the scope of future work are discussed.
Use of microprocessors in multiple-processor systems. W. C1MANDER and A. TSCHELEBIEV. Nachrichtentechni,k Eh,ktronik 28, (12) 488 (1978). (In German.) Important properties of multiple microprocessor systems are investigated and explained with a view to characterizing and classifying them. Some problems and tasks of using microprocessors in such systems are mentioned. The coupling by means of multiple-gate memory and bus, respectively, is considered in greater detail.
Hot time in store for ICs. NI('OLAS MOKHI)FF. Eh'ctronics p. 8t (18 January 1979). Demand for integrated circnits that can function at 250:C to 350'C in industrial and commercial applications spurs research.
The 64-K RAM: which way to refresh? BILL JOHNSTON. E/ectronics p 145 (4 January 1979). A 256-cycle scheme halves the number of sense amplifiers, but breaks ties with the present generation of 16-K RAMs. Extreme temperature range microelectronics. DAVID W. PALMER and RICHARD C. HECKMAN. IEEE Trans. Components, Hybrids, Mf,q Techno/. Chmt.-I, (4) 333 (December 1978). Down-hole geothermal instrumentation must operate over a large temperature range. The technology and capabilities of room temperature to 300:C hybrid and printedcircuit (PC) board electronics that were developed during the last two years to meet that need are summarized. To ensure rapid widespread commercialization, this technology was developed, insofar as possible, using commercially available components, devices, and materials. Initial extensive high-temperature characterization revealed that selected thick-film passive components and silicon junction-field-effect transistors had electrical parameters sufficiently insensitive to temperature change and sufficiently constant in time at high temperatures to form the backbone of this circuitry. Attachment techniques needed to be developed, since standard methods failed at high temperatures. Similarly, circuit design innovations were needed because of the restricted list of parts. Voltage regulators, line drivers, voltage comparators, special purpose amplifiers and multiplexers were constructed and operated over the
Microelectronics on the road to VLSI technique. Part I: Procedural steps. R. PAUL. Nachrichtentechnik Elektronik 29, (2) 49 (1979). (In German.) A stepwise renunciation of chemical working methods in favour of physical ones is necessary when a change is made from the LSI technique to the VLSI one because the structural dimensions of functional elements will continue to decrease and the degree of integration will increase further. An account is given of developments in the field of film-forming and structuring as well as doping. Owing to highly reduced structural dimensions it is also necessary to change fiom optical lithography to electron and X-ray lithography. Eliipsometry--a versatile and non-destructive testing technique. D. DAvms and W. A. PoPOV. Microelectron..I. 9, (3) 27 (1979). A review of the principles ot" ellipsolnctry and an outline of its applications, especially those relevant to the microelectronics industry. High density raises sights of ECL design. WILtJAM R. BLOOD, JR. Electronics p. 99 (1 February 19791. In the realm of microprocessor, bipolar large-scale integrated circuitry has evolved very differently from the metal-oxidesemiconductor LSI technologies. Its big selling poinl is its speed, which can only be optimized for any given micro processor application if the designer has control of Ihc processor's bus structure, word size. and instructiotl set, The need ['or such control has led to the bit-slice approach in bipolar LSI circuits, which is quite unlike the more general-purpose byte orientation of slower MOS 1-nitroprocessors.
7. S E M I C O N D U C T O R I N T E G R A T E D C I R C U I T S , D E V I C E S A N D M A T E R I A L S Equilibrium and non-equilibrium response of an m.o.s. system containing interface traps to a linear voltage ramp. K. BOARD, P. G. C. ALLMAN and J. G. SIMMONS. Solid-St. Electron Devices 3, (1) 11 (January 1979). In the first part of this paper the effects of introducing specific interface trap configurations into the ideal m.o.s, system are considered while maintaining the condition for equilibrium. The theory is then used to fit an experimental curve and it is found that only three rectangular distributions placed appropriately in the energy gap are sufficient to give close agreement. In the second part the capacitance/voltage relationships are considered of an m.o.s, system biased with a linear voltage ramp of such rate as to generate the quasiequilibrium curve for part of the voltage range, and a nonequilibrium portion for the remainder. A theory is developed for the transition point and the subsequent nonequilibrium behaviour, based on the assumption that interface traps that ineract only with the conduction band are the dominating influence. Experimental data are presented which provides reasonable agreement with the theory.
Radiation effects on silicon charge-coupled devices. JOSH'H M. KILLIANY. IEEE Trans. Components, ltvhrids. M/i/ Technol. Chmt.-I, (4) 353 (December 1978). The permanent ionizing and neutron radiation-induced degradation in silicon charge-coupled devices, (CCD's), along with transient upset effects, are reviewed. The operation of a threshold voltage insensitive CCD input technique in a total dose radiation environment is evaluated. CCD structural design rules for decreasing ionizing radiation sensitivity are presented. The increased total ionizing dose tolerance of CC D's fabricated with a radiation hard oxide is described. Liquid nitrogen temperature irradiation effects in CCD's arc discussed. Silicon growth mechanisms. J. BLOEM. Acta e&ctronica 21, (2) 201 (1978). Growth mechanisms in the epitaxial growth of silicon are discussed with emphasis on the nucleation. the steady state growth process at high and low temperatures and the crystallographic quality of the grown layer as a function of growth rate and surface temperature.
World Abstracts on Microelectronics and Reliability
6. MICROELECTRONICS--COMPONENTS, SYSTEMS AND EQUIPMENTS Single-chip n-MOS microcomputer processes signals in real time. M. E. HOF~ and MATT TOWNSEND. Electronics p. 105 (I March 1979). Analog inputs and outputs surround highspeed pipelining processor: user builds filters, oscillators, other analog systems with E-PROM software.
25 300:C temperature range. Temperature and pressure monitoring instruments using these circuits have been used for down-hole measurements in geothermal wells. Methods of fabrication, circuit performance, and the scope of future work are discussed.
Use of microprocessors in multiple-processor systems. W. C1MANDER and A. TSCHELEBIEV. Nachrichtentechni,k Eh,ktronik 28, (12) 488 (1978). (In German.) Important properties of multiple microprocessor systems are investigated and explained with a view to characterizing and classifying them. Some problems and tasks of using microprocessors in such systems are mentioned. The coupling by means of multiple-gate memory and bus, respectively, is considered in greater detail.
Hot time in store for ICs. NI('OLAS MOKHI)FF. Eh'ctronics p. 8t (18 January 1979). Demand for integrated circnits that can function at 250:C to 350'C in industrial and commercial applications spurs research.
The 64-K RAM: which way to refresh? BILL JOHNSTON. E/ectronics p 145 (4 January 1979). A 256-cycle scheme halves the number of sense amplifiers, but breaks ties with the present generation of 16-K RAMs. Extreme temperature range microelectronics. DAVID W. PALMER and RICHARD C. HECKMAN. IEEE Trans. Components, Hybrids, Mf,q Techno/. Chmt.-I, (4) 333 (December 1978). Down-hole geothermal instrumentation must operate over a large temperature range. The technology and capabilities of room temperature to 300:C hybrid and printedcircuit (PC) board electronics that were developed during the last two years to meet that need are summarized. To ensure rapid widespread commercialization, this technology was developed, insofar as possible, using commercially available components, devices, and materials. Initial extensive high-temperature characterization revealed that selected thick-film passive components and silicon junction-field-effect transistors had electrical parameters sufficiently insensitive to temperature change and sufficiently constant in time at high temperatures to form the backbone of this circuitry. Attachment techniques needed to be developed, since standard methods failed at high temperatures. Similarly, circuit design innovations were needed because of the restricted list of parts. Voltage regulators, line drivers, voltage comparators, special purpose amplifiers and multiplexers were constructed and operated over the
Microelectronics on the road to VLSI technique. Part I: Procedural steps. R. PAUL. Nachrichtentechnik Elektronik 29, (2) 49 (1979). (In German.) A stepwise renunciation of chemical working methods in favour of physical ones is necessary when a change is made from the LSI technique to the VLSI one because the structural dimensions of functional elements will continue to decrease and the degree of integration will increase further. An account is given of developments in the field of film-forming and structuring as well as doping. Owing to highly reduced structural dimensions it is also necessary to change fiom optical lithography to electron and X-ray lithography. Eliipsometry--a versatile and non-destructive testing technique. D. DAvms and W. A. PoPOV. Microelectron..I. 9, (3) 27 (1979). A review of the principles ot" ellipsolnctry and an outline of its applications, especially those relevant to the microelectronics industry. High density raises sights of ECL design. WILtJAM R. BLOOD, JR. Electronics p. 99 (1 February 19791. In the realm of microprocessor, bipolar large-scale integrated circuitry has evolved very differently from the metal-oxidesemiconductor LSI technologies. Its big selling poinl is its speed, which can only be optimized for any given micro processor application if the designer has control of Ihc processor's bus structure, word size. and instructiotl set, The need ['or such control has led to the bit-slice approach in bipolar LSI circuits, which is quite unlike the more general-purpose byte orientation of slower MOS 1-nitroprocessors.
7. S E M I C O N D U C T O R I N T E G R A T E D C I R C U I T S , D E V I C E S A N D M A T E R I A L S Equilibrium and non-equilibrium response of an m.o.s. system containing interface traps to a linear voltage ramp. K. BOARD, P. G. C. ALLMAN and J. G. SIMMONS. Solid-St. Electron Devices 3, (1) 11 (January 1979). In the first part of this paper the effects of introducing specific interface trap configurations into the ideal m.o.s, system are considered while maintaining the condition for equilibrium. The theory is then used to fit an experimental curve and it is found that only three rectangular distributions placed appropriately in the energy gap are sufficient to give close agreement. In the second part the capacitance/voltage relationships are considered of an m.o.s, system biased with a linear voltage ramp of such rate as to generate the quasiequilibrium curve for part of the voltage range, and a nonequilibrium portion for the remainder. A theory is developed for the transition point and the subsequent nonequilibrium behaviour, based on the assumption that interface traps that ineract only with the conduction band are the dominating influence. Experimental data are presented which provides reasonable agreement with the theory.
Radiation effects on silicon charge-coupled devices. JOSH'H M. KILLIANY. IEEE Trans. Components, ltvhrids. M/i/ Technol. Chmt.-I, (4) 353 (December 1978). The permanent ionizing and neutron radiation-induced degradation in silicon charge-coupled devices, (CCD's), along with transient upset effects, are reviewed. The operation of a threshold voltage insensitive CCD input technique in a total dose radiation environment is evaluated. CCD structural design rules for decreasing ionizing radiation sensitivity are presented. The increased total ionizing dose tolerance of CC D's fabricated with a radiation hard oxide is described. Liquid nitrogen temperature irradiation effects in CCD's arc discussed. Silicon growth mechanisms. J. BLOEM. Acta e&ctronica 21, (2) 201 (1978). Growth mechanisms in the epitaxial growth of silicon are discussed with emphasis on the nucleation. the steady state growth process at high and low temperatures and the crystallographic quality of the grown layer as a function of growth rate and surface temperature.