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Ultrasharp interfaces grown with Van Der Waals epitaxy
A459 548
Surface Science 174 (1986) 548-549 North-Holland, Amsterdam
GROWTH OF ZnS/ZnTe AND ZnSe/ZnTe SUPERLATTICES BY MOLECULAR BEAM EPITAXY AND ATOMIC LAYER EPITAXY T. TAKEDA,
T. K U R O S U
and M. LIDA
Electrotechnical Laboratory, Sakura-mura, Ibaraki 305, Japan and T. Y A O
Tokai University, Kitakaname, H'~ratsuka, Kanagawa, Japan Received 1 August 1985; accepted for publication 10 January 1986
550
Surface Science 174 (1986) 550-555 North-Holland, Amsterdam
ZnSe-ZnTe STRAINED LAYER SUPERLATFICE ON InP SUBSTRATE BY MOLECULAR BEAM EPITAXY Masakazu KOBAYASHI, Naoki MINO, and Kiyoshi TAKAHASHI
Makoto KONAGAI
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-10hokayama Meguro-k~ Tokyo, Japan Received 4 August 1985: accepted for publication 12 September 1985 A ZnSe-ZnTe strained layer superlattice (SLS) was grown by molecular beam epitaxy with a 7% lattice mismatch between the components of SLS. InP was used as a substrate material and there was a mismatch of only 3.5% between the components of the SLS and InP. ZnSe was expanded and ZnTe was compressed. Thus the strain was accommodated by the SLS structure and a high-quality superlattice was prepared. Reflective high-energy electron diffraction and X-ray measurements indicated that a high-quality SLS was successfully grown. The superlattice structure was also confirmed by photohiminescence (PL) measurements. Moreover, an interesting phenomenon was observed from the temperature dependence of PL intensity. Strong luminescence was obtained only at a temperature of around 60 K from several samples.
556
Surface Science 174 (1986) 556-560 North-Holland, Amsterdam
ULTRASHARP INTERFACES GROWN WITH VAN DER WAALS EPITAXY Atsushi KOMA
and Kazuki YOSHIMURA
Institute of Materials Science, University of Tsukuba, Ibaraki 305, Japan Received 30 July 1985; accepted for publication 15 November 1985 Van der Waals epitaxy, which we have recently developed, has opened a new way to fabricate many kinds of ultrathin heterostructures consisting of metals, semiconductors and insulators by using various transition metal dichalcogenide materials. It also has the advantage that a very sharp and defect-free interface is grown because of the non-existence of dangling bonds at the interface.
Surface Science 174 (1986) 548-549 North-Holland, Amsterdam
GROWTH OF ZnS/ZnTe AND ZnSe/ZnTe SUPERLATTICES BY MOLECULAR BEAM EPITAXY AND ATOMIC LAYER EPITAXY T. TAKEDA,
T. K U R O S U
and M. LIDA
Electrotechnical Laboratory, Sakura-mura, Ibaraki 305, Japan and T. Y A O
Tokai University, Kitakaname, H'~ratsuka, Kanagawa, Japan Received 1 August 1985; accepted for publication 10 January 1986
550
Surface Science 174 (1986) 550-555 North-Holland, Amsterdam
ZnSe-ZnTe STRAINED LAYER SUPERLATFICE ON InP SUBSTRATE BY MOLECULAR BEAM EPITAXY Masakazu KOBAYASHI, Naoki MINO, and Kiyoshi TAKAHASHI
Makoto KONAGAI
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-10hokayama Meguro-k~ Tokyo, Japan Received 4 August 1985: accepted for publication 12 September 1985 A ZnSe-ZnTe strained layer superlattice (SLS) was grown by molecular beam epitaxy with a 7% lattice mismatch between the components of SLS. InP was used as a substrate material and there was a mismatch of only 3.5% between the components of the SLS and InP. ZnSe was expanded and ZnTe was compressed. Thus the strain was accommodated by the SLS structure and a high-quality superlattice was prepared. Reflective high-energy electron diffraction and X-ray measurements indicated that a high-quality SLS was successfully grown. The superlattice structure was also confirmed by photohiminescence (PL) measurements. Moreover, an interesting phenomenon was observed from the temperature dependence of PL intensity. Strong luminescence was obtained only at a temperature of around 60 K from several samples.
556
Surface Science 174 (1986) 556-560 North-Holland, Amsterdam
ULTRASHARP INTERFACES GROWN WITH VAN DER WAALS EPITAXY Atsushi KOMA
and Kazuki YOSHIMURA
Institute of Materials Science, University of Tsukuba, Ibaraki 305, Japan Received 30 July 1985; accepted for publication 15 November 1985 Van der Waals epitaxy, which we have recently developed, has opened a new way to fabricate many kinds of ultrathin heterostructures consisting of metals, semiconductors and insulators by using various transition metal dichalcogenide materials. It also has the advantage that a very sharp and defect-free interface is grown because of the non-existence of dangling bonds at the interface.