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1023. Structrure of In2O3 films prepared by reactive cathodic sputtering
Classified abstracts 1011-1024 experimental investigation of the efficiency of heat shielding in a cryogenic pump, with liquid-nitrogen cooled chevron shields, are presented. It is shown that the evaporation rate of nitrogen from a cooled cryopumping surface increases linearly with increasing heater power. A G Tkachev et al, Izv VUZ Priborostroenie, 14 (6), 1971, 121-123 (in
RusMan). 27. LEAK DETECTORS AND LEAK DETECTION 27 1011. Mass-spectrometric method of detecting leaks in vacuum apparatus. (USSR) A new mass-spectrometric method of leak detection is proposed. [n the conventional method a single liquid is employed in order to detect the positions of leaks, and readings from this liquid may continue to be observed for a long time even after the leak has been ameliorated. Rigorous testing therefore takes an even longer time. In the method here proposed a second liquid is applied after the first, and the continued presence of a leak is clearly indicated by sharp changes in the combined mass spectrum. Analysis of these changes facilitates an exact determination of the position of any residual leak. V E Skurat and G V Karpov, USSR Patent No 283669, appl 18th Dec 1968, publd 23rd April 1971.
III. V a c u u m applications 30. EVAPORATION AND SPUTTERING 30 1012. Thermal properties and ultraviolet absorption of thin Bi, Sb, Sn, Ag and Au metallic films. (Germany) Optical and thermal properties of thin metallic films of Bi, Sb, Sn, Ag and Au, prepared by thermal evaporation in vacuum at 10 r, torr on thin collodium substrates, are determined. W Zukale, Exper Tech Phys, 19 (5), 1971,313-331 (in German). 3O 1013. Observation of Cd crystal growth in thin CdSe films during an airbake. (Germany) Cd crystallite growth is observed during heat treatment of CdSe films in air. The CdSe films were deposited on glass substrates kept at 200°C in vacuum at pressure of 1~ 10-5 torr. The single-source, closed-chamber method of deposition was used. (Norway) P O Lopen, Phys Star Sol (a), 9 (I), Jan 1972, 263 266. 30 I014. Intrinsic magnetic resonance linewidth in permalloy films. (Germany) The linewidth of intrinsic magnetic resonance of a permalloy film has been studied very accurately as a function of angle between the applied dc field and the plane of the film. The investigated permalloy films were prepared at initial vacuum of 5 ~ 10-~ torr on carefully cleaned substrates. The experimental data agree with the theoretical results. (USA) C Vittoria and G C Bailey, Phys Stat Sol (a), 9 (I), Jan 1972, 283-287. 30 1015. Anisotropy of the magnetoresistance in GaAs monoerystalline films. (Germany) Anisotropy of the magnetoresistance of GaAs monocrystalline films is investigated at low temperatures. Epitaxial films of GaAs with thickness of 14 to 100 pm have been grown from the vapour phase on semi-insulating GaAs. (USSR) T N Sitenko et al, Phys Stat Sol (a), 9 (l), Jan 1972, 51 57. 30 1016. Optical constants of AgI thin films in the region of the exciton band. (USSR) Optical constants of Agl thin films with hexagonal structure are determined in the region of the exciton band. The investigated samples have been prepared by treatment in I2 vapour at room temperature of thin silver films deposited by vacuum evaporation on glass substrates. L A Ageev et al, Optika Spektroskop, 31 (6), 1971, 1034-1036 (in
Russian). 3O 1017. Optical and structural properties of thin films of amorphous antimony. (USSR) The thickness dependence of the optical constants is determined for thin films of amorphous antimony deposited at 5 • 10 :' torr on glass
424
substrates. Antimony was evaporated from a tungsten boat, Electron microscopy and electron graphical investigations indicate a granular structure in the antimony films and their transformation from the mnorphous into the crystalline state at thickness of abou l0/tm. ! N Shklyarevskiy and A I Usoskin, Optika Spektroskop, 31 (4), 1971, 623 627 (in Russian). 30 1018. Composition and temperature coefficient of evaporated nickelchromium films. (Germany) The composition and thermal dependence of the electrical resistance of nickel-chromium films is investigated. The films were prepared by sublimation of the elements from a tungsten boat at 8 10 :' torr on ceramic substrates. Good stability of the electrical resistance is obtained in films containing about 40 per cent of chromium and it enhanced with increasing substrate temperature. E Sehippel, Krist und Tech, 6 (3), 1971,439-444 (in Russian). 30 1019. Silicon dioxide films deposited by vapour-phase method. (USSR) Physical properties of SiO2 thin films prepared by vapour-phase methods (hydrolysis, oxidation and pyrolytic decomposition of Si compounds) are compared. Influence of deposition conditions and substrate material on properties of MOS structures prepared by these methods is studied. R P Kalnynya et al, Semiconductors and Their Application in I£1ectrical Engineering, No 5, Coil, Riga Zinatne 1971, 5 41 (in Russian). 30 1020. Formation of dislocation structure in germanium epitaxial films during growth from vapour phase. (USSR) Formation of dislocations in germanium autoepitaxial films grown by the closed iodide gas-transport method is investigated using the method of x-ray topography. Formation of dislocations in dependence on iodine concentration is studied in detail. L N Aleksandrov et al, Ukr Fiz Zh, 16 (9), 1971, 1543 1547 (in
Russian). 3O 1021. On the mechanism of destruction of thin films by light from impulse lamps. (USSR) The destruction of A1 films, deposited at pressures from 5 . 10-~ to 5 . 10 a torr on dielectric substrates, by light impulses, is investigated. It is found that film adhesion is improved by lowering the deposition pressure. Interaction of the light with adsorbed molecules of residual gas located in the film-substrate boundary and also in the volume of the film, plays a basic role in the destruction. R B Tagirov et al, Coil of Aspirant Works of Kazan University, Exact Sciences, Meeh Phys, Kazan 1971, 116-121 (in Ruysian). 30 1022. Monitoring the evaporation of metals in vacuum by the method of atomic absorption. (USSR) The resonance absorption of light is used to monitor the process of evaporation of metals in vacuum. For accurate measurement of the concentration of evaporating metal it is necessary to maintain a residual gas pressure below 10-~ torr. P S Semin, Coil of Aspirant Works of Kazan University, Exact Sciences, Mech Phys, Kazan 1971, 111-115 (in Russian). 30 1023. Structure of 1n203 films prepared by reactive cathodic sputtering. (USSR) Structure of ln20:~ films on glass substrates, prepared by reactive cathodic sputtering in argon-oxygen and krypton-oxygen mixtures at accelerating voltage 2.5 kV, current density 0.73 mA/cm ~, and substrate temperature of 300°C, is investigated by x-ray methods. It is found that structure of ln2Oa films depends strongly on their deposition rate. The experimental results indicate that chemical processes in the reactive cathodic sputtering of ln2Oa take place mainly in the discharge plasma. V M Vaynshteyn et al, Neorg Mater, 7 (2), 1971, 338 340 (in RussianJ. 30 1024. Photochemical transformations in the systems As2Sea Ag and (Ge-As-Se)-Ag. (USSR) Photochemical transformations in the thin-film systems semiconductor-metal are investigated. The photosensitive systems have been prepared by successive evaporation of Ag and As2Se:~ or Ge-As-Se films on dielectric substrates in vacuum at 1 ~ 10 ~ torr. M T Kostyshin et al, Neorg Mater, 7 (2), 1971, 210~-213 (in Russian).
RusMan). 27. LEAK DETECTORS AND LEAK DETECTION 27 1011. Mass-spectrometric method of detecting leaks in vacuum apparatus. (USSR) A new mass-spectrometric method of leak detection is proposed. [n the conventional method a single liquid is employed in order to detect the positions of leaks, and readings from this liquid may continue to be observed for a long time even after the leak has been ameliorated. Rigorous testing therefore takes an even longer time. In the method here proposed a second liquid is applied after the first, and the continued presence of a leak is clearly indicated by sharp changes in the combined mass spectrum. Analysis of these changes facilitates an exact determination of the position of any residual leak. V E Skurat and G V Karpov, USSR Patent No 283669, appl 18th Dec 1968, publd 23rd April 1971.
III. V a c u u m applications 30. EVAPORATION AND SPUTTERING 30 1012. Thermal properties and ultraviolet absorption of thin Bi, Sb, Sn, Ag and Au metallic films. (Germany) Optical and thermal properties of thin metallic films of Bi, Sb, Sn, Ag and Au, prepared by thermal evaporation in vacuum at 10 r, torr on thin collodium substrates, are determined. W Zukale, Exper Tech Phys, 19 (5), 1971,313-331 (in German). 3O 1013. Observation of Cd crystal growth in thin CdSe films during an airbake. (Germany) Cd crystallite growth is observed during heat treatment of CdSe films in air. The CdSe films were deposited on glass substrates kept at 200°C in vacuum at pressure of 1~ 10-5 torr. The single-source, closed-chamber method of deposition was used. (Norway) P O Lopen, Phys Star Sol (a), 9 (I), Jan 1972, 263 266. 30 I014. Intrinsic magnetic resonance linewidth in permalloy films. (Germany) The linewidth of intrinsic magnetic resonance of a permalloy film has been studied very accurately as a function of angle between the applied dc field and the plane of the film. The investigated permalloy films were prepared at initial vacuum of 5 ~ 10-~ torr on carefully cleaned substrates. The experimental data agree with the theoretical results. (USA) C Vittoria and G C Bailey, Phys Stat Sol (a), 9 (I), Jan 1972, 283-287. 30 1015. Anisotropy of the magnetoresistance in GaAs monoerystalline films. (Germany) Anisotropy of the magnetoresistance of GaAs monocrystalline films is investigated at low temperatures. Epitaxial films of GaAs with thickness of 14 to 100 pm have been grown from the vapour phase on semi-insulating GaAs. (USSR) T N Sitenko et al, Phys Stat Sol (a), 9 (l), Jan 1972, 51 57. 30 1016. Optical constants of AgI thin films in the region of the exciton band. (USSR) Optical constants of Agl thin films with hexagonal structure are determined in the region of the exciton band. The investigated samples have been prepared by treatment in I2 vapour at room temperature of thin silver films deposited by vacuum evaporation on glass substrates. L A Ageev et al, Optika Spektroskop, 31 (6), 1971, 1034-1036 (in
Russian). 3O 1017. Optical and structural properties of thin films of amorphous antimony. (USSR) The thickness dependence of the optical constants is determined for thin films of amorphous antimony deposited at 5 • 10 :' torr on glass
424
substrates. Antimony was evaporated from a tungsten boat, Electron microscopy and electron graphical investigations indicate a granular structure in the antimony films and their transformation from the mnorphous into the crystalline state at thickness of abou l0/tm. ! N Shklyarevskiy and A I Usoskin, Optika Spektroskop, 31 (4), 1971, 623 627 (in Russian). 30 1018. Composition and temperature coefficient of evaporated nickelchromium films. (Germany) The composition and thermal dependence of the electrical resistance of nickel-chromium films is investigated. The films were prepared by sublimation of the elements from a tungsten boat at 8 10 :' torr on ceramic substrates. Good stability of the electrical resistance is obtained in films containing about 40 per cent of chromium and it enhanced with increasing substrate temperature. E Sehippel, Krist und Tech, 6 (3), 1971,439-444 (in Russian). 30 1019. Silicon dioxide films deposited by vapour-phase method. (USSR) Physical properties of SiO2 thin films prepared by vapour-phase methods (hydrolysis, oxidation and pyrolytic decomposition of Si compounds) are compared. Influence of deposition conditions and substrate material on properties of MOS structures prepared by these methods is studied. R P Kalnynya et al, Semiconductors and Their Application in I£1ectrical Engineering, No 5, Coil, Riga Zinatne 1971, 5 41 (in Russian). 30 1020. Formation of dislocation structure in germanium epitaxial films during growth from vapour phase. (USSR) Formation of dislocations in germanium autoepitaxial films grown by the closed iodide gas-transport method is investigated using the method of x-ray topography. Formation of dislocations in dependence on iodine concentration is studied in detail. L N Aleksandrov et al, Ukr Fiz Zh, 16 (9), 1971, 1543 1547 (in
Russian). 3O 1021. On the mechanism of destruction of thin films by light from impulse lamps. (USSR) The destruction of A1 films, deposited at pressures from 5 . 10-~ to 5 . 10 a torr on dielectric substrates, by light impulses, is investigated. It is found that film adhesion is improved by lowering the deposition pressure. Interaction of the light with adsorbed molecules of residual gas located in the film-substrate boundary and also in the volume of the film, plays a basic role in the destruction. R B Tagirov et al, Coil of Aspirant Works of Kazan University, Exact Sciences, Meeh Phys, Kazan 1971, 116-121 (in Ruysian). 30 1022. Monitoring the evaporation of metals in vacuum by the method of atomic absorption. (USSR) The resonance absorption of light is used to monitor the process of evaporation of metals in vacuum. For accurate measurement of the concentration of evaporating metal it is necessary to maintain a residual gas pressure below 10-~ torr. P S Semin, Coil of Aspirant Works of Kazan University, Exact Sciences, Mech Phys, Kazan 1971, 111-115 (in Russian). 30 1023. Structure of 1n203 films prepared by reactive cathodic sputtering. (USSR) Structure of ln20:~ films on glass substrates, prepared by reactive cathodic sputtering in argon-oxygen and krypton-oxygen mixtures at accelerating voltage 2.5 kV, current density 0.73 mA/cm ~, and substrate temperature of 300°C, is investigated by x-ray methods. It is found that structure of ln2Oa films depends strongly on their deposition rate. The experimental results indicate that chemical processes in the reactive cathodic sputtering of ln2Oa take place mainly in the discharge plasma. V M Vaynshteyn et al, Neorg Mater, 7 (2), 1971, 338 340 (in RussianJ. 30 1024. Photochemical transformations in the systems As2Sea Ag and (Ge-As-Se)-Ag. (USSR) Photochemical transformations in the thin-film systems semiconductor-metal are investigated. The photosensitive systems have been prepared by successive evaporation of Ag and As2Se:~ or Ge-As-Se films on dielectric substrates in vacuum at 1 ~ 10 ~ torr. M T Kostyshin et al, Neorg Mater, 7 (2), 1971, 210~-213 (in Russian).