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1027. Piezoresistance in n-type silicon inversion layers at low temperatures
Classified abstracts
1021-I 035
2: 1: 3 at a total pressure of 210 torr is described. The dependence of pulse energy on pressure of the working mixture in the range of 20 to 300 torr is given. V Yu Baranov Russian).
et al, Prib
Tekh Eksper,
No 5, 1973,
188-190
(in 31
1021. Infrared-optical
transducer.
(USSR) A device for visualization of infrared two-dimensional images is described. The sensitive element of the device is formed by a layer of liquid crystal. The device is evacuated to lo- 1 torr for elimination of heat convection and for obtaining uniform temperature field on the absorbing chromium film. G M Zharkova et al, Prib Tekh Eksper, No 5, 1973, 208-210 (in Russian).
31 1022. Controlled discharger with magnetic field. (USSR) It is shown that a controlled discharger with cold cathode. mercury filling and steady magnetic field can be used for switching currenis up to 25 kA. A I Soklatenko et al, Prib Tekh Eksper, No 5,1973,177-l 79 (in Russian).
of
32. NUCLEONICS
32 of various modes of operation
1023. Energy characteristics
of pulsed
coaxial plasma accelerator.
(USSR) Basic discharge characteristics are measured for two modes of operation of coaxial plasma accelerators. The plasma accelerator was connected to a vacuum chamber in which pressure less than lo-” torr was maintained. It is found that the fast mode, at which highenergy ions are generated, is related with turbulent heating of plasma by transversal current. A A Kalmykov et al, Zh Tekh Fiz, 43 (l2), 1973, 2547-2552 (in Russian).
32 1024. Investigation of the ionization closed drift of electrons. (USSR)
zone in two-lens accelerator
with
Using the probe and optical methods, the zone of ionization is investigated in a high-current two-lens accelerator with closed drift of electrons at voltage 2.1 kV, current 880 A, magnetic field 720 Oe and hydrogen admission 6 x 10Z1 particles/set. V A Abramov et al, Zh Tekh Fiz, 43 (12), 1973,2562-2567 (in Russian). 1025. Ions bombarding cathode of pulsed plasma accelerator participation in generation of heat-flows. (USSR)
32 and their
The distribution of flow of power due to ion bombardment of cathode of coaxial pulsed plasma accelerator with erosion of electrodes is measured. Mass composition of the ion current is analyzed. The experiments were performed in a vacuum chamber at pressure 1 to 5 x 10m5 torr. N V Belan et al, Zh Tekh Fiz, 43 (8), 1973, 1667-1671 (in Russian). 32 1026. Acceleration
of ions by relativistic electron beam. (USSR)
The effect of acceleration of ions to energy 6 to 7 MeV by a relativistic electron beam with energy 1 MeV is investigated in a high-current resonator electron accelerator with an electron beam formed of plasma of vacuum discharge in a spark source. Energy and mass composition of the accelerated ion beam is analyzed. A A Plyutto et al, Zh Tekh Fir, 43 (8), 1973, 1627-1631 (in Russian). 33. GENERAL
PHYSICS
AND ELECTRONICS 33
1027. Piezoresistance
in n-type silicon inversion layers at low tempera-
tures. (Germany) Piezoresistance is investigated
in n-type silicon inversion layers on (100) and (110) Si surfaces at low temperatures in a cryostat chamber evacuated to lo-* bar. G Dorda and I Eisele, Phys Stat Sol (a), 20 (l), 1973, 263-273. 33 1028. Investigation of the anisotropy of surface conductance in n-type germanium. (Germany) The anisotropy of the surface mobility for oriented, nearly intrinsic n-type germanium samples was investigated at different temperatures (77 to 300°K) and different states of surface in vacuum 10m5 torr. (USSR) Yu I Gorkun et al, Phys Srat So/ (a), 20 (l), 1973,275-283. 326
33 1029. Combined hopping and tunnelling mechanism of electron transport and doping effects in chloranil-trimethylamine
charge-transfer
complex.
(Germany) A conduction mode1 is proposed to account for the doping effect (diminution of appraent resistivity and activation energy, overohmic current voltage characteristics) experimentally observed in chloranil-trimethylamine charge complex when exposed to trimethylamine vapour in the pressure range 675 to 10e3 torr. (Poland) H Chojnacki et al, Phys Stat Sol (a), 20 (l), 1973, 211-216. 33 1030. Ion implantation doping of compound semiconductors. (Germany) Advantages of ion implantation doping of semiconductor materials as compared with diffusion techniques are discussed. The essential elements of an implantation machine are considered. The ion source should be capable of producing adequate numbers of ions of any element likely to be of interest as a dopant. The desired ions must be selected from the variety of ions which are inevitably produced. This requires an isotope selector. There must be provision for focusing and defocusing of the beam, or scanning of a fine beam over the area to be irradiated. Provision is often made for maintaining the target at high temperature, or rather less commonly at temperatures down to that of liquid nitrogen. A vacuum of 10m6 torr is usually adequate, preferably in a clean system (i.e. one in which contamination by pump fluids cannot occur, due to the use of ion pumps). Range of implanted ions in amorphous material, channeling and radiation damage are treated. Techniques of implantation profile measurement are described. (England) P L Degen, Phys Star Sol (a), 16 (l), 1973, 9-42. 33 1031. Field emission studies of clean and contaminated silver tips. (Germany) Clean (111) oriented silver field emitting tips have been prepared from etched wire by repeated field evaporation and heat treatment. A field emission microscope pumped by sorption, sputter-ion and sublimation pumps down to pressure of 10e9 torr was used. The electron or ion current from the tip was multiplied by a factor above 1000 by a channel plate before it was incident on a phosphor screen. The thermal end-form of the clean surface shows(lllj, (100) and (1101 faces if the tin radii are greater than 1000 .& The clean surface hoei not absorb residual gases(H,, CO, CH,) under UHV conditions (lo-” torr region) if its temperature is above 0°C. On heating after field evaporation, the tips exhibit contamination as brightly emitting agglomerates randomly distributed over the surface. The brightly emitting impurities decrease the work function. The cleaning procedure and the nature of the surface contaminants are discussed. W A Schmidt et al, Phys Sfat Sol (a), 16 (l), 1973, 127-13 I. 33 1032. Effect of heat treatment on the 0.93, 1.0 and 1.28 eV luminescence bands in n-GaAs. (Germany) The influence of heat treatment of n-GaAs in the temperature interval of 250 to 750°C in vacuum, As atmosphere, at copper diffusion and
GaAs evaporation due to temperature gradient, on the 0.93, 1.O and I .28 eV luminescence bands is investigated. (USSR) F M Vorohkalo et al, Phys Star Sol (a), 15 (l), 1973, 287-293. 33 1033. Cathode-ray excited luminescence and thermoluminescence of a synthetic calcite monocrystal. (Germany) Cathodoluminescence and thermoluminescence of synthetic calcite single crystals is investigated at electron energies of 8 to 15 keV. Experimental results are discussed. (France) R Visocekas et al, Phys Stat Sol (a), 15 (I), 1973, 61-66. 33 1034. Investigation of pn junctions with and without oxide layer with the aid of electron mirror microscopy at shadow imaging. (Germany)
Silicon p-n junctions with and without SiOr and B203 layers are investigated in a mirror electron microscope operated in the shadow imaging mode. G Becherer et al, Krist und Techn, 8 (l-3), 1973, 287-298 (in German). 1035. Electron microscopical of carbon filaments. (USSR)
technique for investigation
33 of structure
A technique for preparation of two-stage replicas of carbon filaments for investigation in transmission electron microscopes is described.
1021-I 035
2: 1: 3 at a total pressure of 210 torr is described. The dependence of pulse energy on pressure of the working mixture in the range of 20 to 300 torr is given. V Yu Baranov Russian).
et al, Prib
Tekh Eksper,
No 5, 1973,
188-190
(in 31
1021. Infrared-optical
transducer.
(USSR) A device for visualization of infrared two-dimensional images is described. The sensitive element of the device is formed by a layer of liquid crystal. The device is evacuated to lo- 1 torr for elimination of heat convection and for obtaining uniform temperature field on the absorbing chromium film. G M Zharkova et al, Prib Tekh Eksper, No 5, 1973, 208-210 (in Russian).
31 1022. Controlled discharger with magnetic field. (USSR) It is shown that a controlled discharger with cold cathode. mercury filling and steady magnetic field can be used for switching currenis up to 25 kA. A I Soklatenko et al, Prib Tekh Eksper, No 5,1973,177-l 79 (in Russian).
of
32. NUCLEONICS
32 of various modes of operation
1023. Energy characteristics
of pulsed
coaxial plasma accelerator.
(USSR) Basic discharge characteristics are measured for two modes of operation of coaxial plasma accelerators. The plasma accelerator was connected to a vacuum chamber in which pressure less than lo-” torr was maintained. It is found that the fast mode, at which highenergy ions are generated, is related with turbulent heating of plasma by transversal current. A A Kalmykov et al, Zh Tekh Fiz, 43 (l2), 1973, 2547-2552 (in Russian).
32 1024. Investigation of the ionization closed drift of electrons. (USSR)
zone in two-lens accelerator
with
Using the probe and optical methods, the zone of ionization is investigated in a high-current two-lens accelerator with closed drift of electrons at voltage 2.1 kV, current 880 A, magnetic field 720 Oe and hydrogen admission 6 x 10Z1 particles/set. V A Abramov et al, Zh Tekh Fiz, 43 (12), 1973,2562-2567 (in Russian). 1025. Ions bombarding cathode of pulsed plasma accelerator participation in generation of heat-flows. (USSR)
32 and their
The distribution of flow of power due to ion bombardment of cathode of coaxial pulsed plasma accelerator with erosion of electrodes is measured. Mass composition of the ion current is analyzed. The experiments were performed in a vacuum chamber at pressure 1 to 5 x 10m5 torr. N V Belan et al, Zh Tekh Fiz, 43 (8), 1973, 1667-1671 (in Russian). 32 1026. Acceleration
of ions by relativistic electron beam. (USSR)
The effect of acceleration of ions to energy 6 to 7 MeV by a relativistic electron beam with energy 1 MeV is investigated in a high-current resonator electron accelerator with an electron beam formed of plasma of vacuum discharge in a spark source. Energy and mass composition of the accelerated ion beam is analyzed. A A Plyutto et al, Zh Tekh Fir, 43 (8), 1973, 1627-1631 (in Russian). 33. GENERAL
PHYSICS
AND ELECTRONICS 33
1027. Piezoresistance
in n-type silicon inversion layers at low tempera-
tures. (Germany) Piezoresistance is investigated
in n-type silicon inversion layers on (100) and (110) Si surfaces at low temperatures in a cryostat chamber evacuated to lo-* bar. G Dorda and I Eisele, Phys Stat Sol (a), 20 (l), 1973, 263-273. 33 1028. Investigation of the anisotropy of surface conductance in n-type germanium. (Germany) The anisotropy of the surface mobility for oriented, nearly intrinsic n-type germanium samples was investigated at different temperatures (77 to 300°K) and different states of surface in vacuum 10m5 torr. (USSR) Yu I Gorkun et al, Phys Srat So/ (a), 20 (l), 1973,275-283. 326
33 1029. Combined hopping and tunnelling mechanism of electron transport and doping effects in chloranil-trimethylamine
charge-transfer
complex.
(Germany) A conduction mode1 is proposed to account for the doping effect (diminution of appraent resistivity and activation energy, overohmic current voltage characteristics) experimentally observed in chloranil-trimethylamine charge complex when exposed to trimethylamine vapour in the pressure range 675 to 10e3 torr. (Poland) H Chojnacki et al, Phys Stat Sol (a), 20 (l), 1973, 211-216. 33 1030. Ion implantation doping of compound semiconductors. (Germany) Advantages of ion implantation doping of semiconductor materials as compared with diffusion techniques are discussed. The essential elements of an implantation machine are considered. The ion source should be capable of producing adequate numbers of ions of any element likely to be of interest as a dopant. The desired ions must be selected from the variety of ions which are inevitably produced. This requires an isotope selector. There must be provision for focusing and defocusing of the beam, or scanning of a fine beam over the area to be irradiated. Provision is often made for maintaining the target at high temperature, or rather less commonly at temperatures down to that of liquid nitrogen. A vacuum of 10m6 torr is usually adequate, preferably in a clean system (i.e. one in which contamination by pump fluids cannot occur, due to the use of ion pumps). Range of implanted ions in amorphous material, channeling and radiation damage are treated. Techniques of implantation profile measurement are described. (England) P L Degen, Phys Star Sol (a), 16 (l), 1973, 9-42. 33 1031. Field emission studies of clean and contaminated silver tips. (Germany) Clean (111) oriented silver field emitting tips have been prepared from etched wire by repeated field evaporation and heat treatment. A field emission microscope pumped by sorption, sputter-ion and sublimation pumps down to pressure of 10e9 torr was used. The electron or ion current from the tip was multiplied by a factor above 1000 by a channel plate before it was incident on a phosphor screen. The thermal end-form of the clean surface shows(lllj, (100) and (1101 faces if the tin radii are greater than 1000 .& The clean surface hoei not absorb residual gases(H,, CO, CH,) under UHV conditions (lo-” torr region) if its temperature is above 0°C. On heating after field evaporation, the tips exhibit contamination as brightly emitting agglomerates randomly distributed over the surface. The brightly emitting impurities decrease the work function. The cleaning procedure and the nature of the surface contaminants are discussed. W A Schmidt et al, Phys Sfat Sol (a), 16 (l), 1973, 127-13 I. 33 1032. Effect of heat treatment on the 0.93, 1.0 and 1.28 eV luminescence bands in n-GaAs. (Germany) The influence of heat treatment of n-GaAs in the temperature interval of 250 to 750°C in vacuum, As atmosphere, at copper diffusion and
GaAs evaporation due to temperature gradient, on the 0.93, 1.O and I .28 eV luminescence bands is investigated. (USSR) F M Vorohkalo et al, Phys Star Sol (a), 15 (l), 1973, 287-293. 33 1033. Cathode-ray excited luminescence and thermoluminescence of a synthetic calcite monocrystal. (Germany) Cathodoluminescence and thermoluminescence of synthetic calcite single crystals is investigated at electron energies of 8 to 15 keV. Experimental results are discussed. (France) R Visocekas et al, Phys Stat Sol (a), 15 (I), 1973, 61-66. 33 1034. Investigation of pn junctions with and without oxide layer with the aid of electron mirror microscopy at shadow imaging. (Germany)
Silicon p-n junctions with and without SiOr and B203 layers are investigated in a mirror electron microscope operated in the shadow imaging mode. G Becherer et al, Krist und Techn, 8 (l-3), 1973, 287-298 (in German). 1035. Electron microscopical of carbon filaments. (USSR)
technique for investigation
33 of structure
A technique for preparation of two-stage replicas of carbon filaments for investigation in transmission electron microscopes is described.