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10th International Conference on the Physics
Solid State Communications,
Vol.8, pp. iv—vi, 1970.
Pergamon Press. Printed in Great Britain
Calendar of Solid State Events Items for inclusion in the Calendar should state the title, date, location and sponsors of the meeting, and also the name and address of the person to whom enquiries should be directed. Announcements for publication should be mailed to ‘Editor, Solid State Communications,’ Department of Physics, University of Pennsylvania, Philadelphia, Pennsylvania, 19104. 6—10 July 1970
session chairman): H. Burte, A.V. Grosse, discussion leaders.
Gordon Research Conferences, Providence Heights College, Issaquah, Washington.
10 July 1970 Syntheses (J.L. Margrave, session chairman):
HIGH TEMPERATURE CHEMISTRY
P.J,. Tims, L. Andrews, discussion leaders.
Robert J. Thorn, Chairman, K. Douglas Carlson, Vice Chairman.
2—14 August 1970 Advanced Study Institute on Physics and Chemistry of Solids Under High Pressure, Sponsored by NATO, Deift, the Netherlands.
Order-Disorder and Meanings of High Temperature Chemistry 6 July 1970 Order-disorder in nonstoichiometric cornpounds (L. Eyring, session chairman): J.W. Cahn, A.R. Ubbelohde, discussion leaders.
Topics to be covered include high pressure studies on band structure of semiconductors, electron transfer processes, magnetic properties, phonons, equation of state, phase transitions,
7 July 1970
sound propagation, metals dielectrics, superconductors and various high pressure techniques.
Ordered clusters in liquids (alloys) (G.R.B. Elliott, session chairman): G. Borelius, L.S. Darken, discussion leaders. Correlation of entropic and enthalpic effects. Scaling laws (J. Norman, session chairman): P. Winchell, H.T. Davis, discussion leaders.
Information: Prof. S.S. Mitra. Department of Electrical Engineering, University of Rhode Island, Kings1on, Rhode Island, 02881.
8 July 1970 Transports and reactions in solids U.B. Wagner, Jr., session chairman): R.E. Hanneman, H. Schmal.zried, D.A. Stevenson, discussion leaders.
17—21 August 1970 10th International Conference on the Physics of Semiconductors, Sponsored by the International Union of Pure and Applied Physics, Massachusetts
9 July 1970
Institute of Technology, Cambridge, Massachusetts.
Gas-solid interactions, vaporization and sublimation (P.G. Wahibeck, session chairman): F.O. Goodman, J.T. Yates, Jr., discussion leaders. Directions in science and technology in high temperature chemistry (P.W. Gil les,
This is the tenth in a series of bi-annual conferences on the Physics of Semiconductors sponsored by the International Union of Pure and Applied Physics. Recent conferences were at Paris (1964), Kyoto (1966), and Moscow (1968).
iv
CALENDAR OF SOLID STATE EVENTS The general form of these conferences will be followed. As in the past, papers on devices will be excluded. The topics to be covered will limited to those that have been developing at a particularly rapid rate in recent years. Papers on many classical subjects of semiconductor physics and those appropriate to other conferences will be severely limited. Only paper of unusual irnportance will be accepted in these areas. A partial list of subjects to be stressed is: Phonon Electron Interactions, Quantum Optics, Optical Properties, Low Mobility Semiconductors—Amorphous and crystalline, and Non-linear Electron Transport including tunneling.
Vol. 8, No.13
Information M. Balkanski, Secretary, Organizing Committee, Laboratoire de Physique des Solides, Faculte des Sciences - Tour 13, 9~Quai Saint-Bernard, Paris, 5, France. 22—26 June 1970 Gordon Research Conferences, Holderness School, Plymouth, New Hampshire. Crystal Growth
The deadline for the submission of ABSTRACTS will be about 15 April 1970.
W.G. Pfann, Co-chairman, Robert L. Parker, Co-chairman. 22 June 1970
The Organizing Committee reserves the right to limit attendance at the Conference to 750 participants.
R.F.. Sekerka, ‘Phenomenological theory of growth from the melt”; S. Coriell, ‘Morphological stability of ice crystals in aqueous solutions”; D. Uhlmann, ‘Crystallization and melting in
Information: Marshall I. Nathan, Secretary, International Conference on the Physics of Semiconductors, IBM Thomas J. Watson Research Center, Box 218, Yorktown Heights, New York, 10598, U.S.A.
glass-forming systems”; H. Gatos, ‘Crystal growth from the melt with emphasis on aspects of the growth interface.” 23 June 1970 (K~A.Jackson, discussion leader): A,A. Chernov, “Theory of crystal growth from solutions and in the presence of impurities”; J. Verhoeven, ‘Controlled solidification and melting experiments in concentrated alloys”; W.A. Tiller, “Crystallizati on interfaces —their energetics, kinetics and topography.”
19—23 July 1971 International Conference on Light Scattering in Solids Paris, France The purpose of this Conference is to bring together specialists interested in the field of condensed matter, its phase transformations, elementary excitations and the methods and problems of studying the fundamental behaviour of interacting systems via light scattering. The programme is planned for the following subjects: light (Rayleigh, Brillouin, Raman) scattering b~’ elementary excitations in solids such as plasmons, phonons, single particle electron excitations, and magnons; mechanism of light scattering; critical phenomena, phase transitions iii solids; lattice defects and disordered systems; metals and heavily doped systems; stimulated Raman scattering; new experimental methods,
24 June 1970 L.G, Van Uitert, “Growth of crystals for magnetic and optical applications”; H. Reiss, “Mobilities of nulcei and islands oi outgrowth during formation of hetero-epitaxial films from the vapour”; R.S. Wagner and R.J.H. Voorhoeve, “Nucleation and growth of cadmium from the vapor.” 25 June 1970
J•J~Tietjen, “Vapor phase growth of 3—5 compounds”; B.W. Batterman, “Assessment of crystal perfection”; R.E. Hanneman, “Diamonds, meteorites and the moon.” v
Vol.8, pp. iv—vi, 1970.
Pergamon Press. Printed in Great Britain
Calendar of Solid State Events Items for inclusion in the Calendar should state the title, date, location and sponsors of the meeting, and also the name and address of the person to whom enquiries should be directed. Announcements for publication should be mailed to ‘Editor, Solid State Communications,’ Department of Physics, University of Pennsylvania, Philadelphia, Pennsylvania, 19104. 6—10 July 1970
session chairman): H. Burte, A.V. Grosse, discussion leaders.
Gordon Research Conferences, Providence Heights College, Issaquah, Washington.
10 July 1970 Syntheses (J.L. Margrave, session chairman):
HIGH TEMPERATURE CHEMISTRY
P.J,. Tims, L. Andrews, discussion leaders.
Robert J. Thorn, Chairman, K. Douglas Carlson, Vice Chairman.
2—14 August 1970 Advanced Study Institute on Physics and Chemistry of Solids Under High Pressure, Sponsored by NATO, Deift, the Netherlands.
Order-Disorder and Meanings of High Temperature Chemistry 6 July 1970 Order-disorder in nonstoichiometric cornpounds (L. Eyring, session chairman): J.W. Cahn, A.R. Ubbelohde, discussion leaders.
Topics to be covered include high pressure studies on band structure of semiconductors, electron transfer processes, magnetic properties, phonons, equation of state, phase transitions,
7 July 1970
sound propagation, metals dielectrics, superconductors and various high pressure techniques.
Ordered clusters in liquids (alloys) (G.R.B. Elliott, session chairman): G. Borelius, L.S. Darken, discussion leaders. Correlation of entropic and enthalpic effects. Scaling laws (J. Norman, session chairman): P. Winchell, H.T. Davis, discussion leaders.
Information: Prof. S.S. Mitra. Department of Electrical Engineering, University of Rhode Island, Kings1on, Rhode Island, 02881.
8 July 1970 Transports and reactions in solids U.B. Wagner, Jr., session chairman): R.E. Hanneman, H. Schmal.zried, D.A. Stevenson, discussion leaders.
17—21 August 1970 10th International Conference on the Physics of Semiconductors, Sponsored by the International Union of Pure and Applied Physics, Massachusetts
9 July 1970
Institute of Technology, Cambridge, Massachusetts.
Gas-solid interactions, vaporization and sublimation (P.G. Wahibeck, session chairman): F.O. Goodman, J.T. Yates, Jr., discussion leaders. Directions in science and technology in high temperature chemistry (P.W. Gil les,
This is the tenth in a series of bi-annual conferences on the Physics of Semiconductors sponsored by the International Union of Pure and Applied Physics. Recent conferences were at Paris (1964), Kyoto (1966), and Moscow (1968).
iv
CALENDAR OF SOLID STATE EVENTS The general form of these conferences will be followed. As in the past, papers on devices will be excluded. The topics to be covered will limited to those that have been developing at a particularly rapid rate in recent years. Papers on many classical subjects of semiconductor physics and those appropriate to other conferences will be severely limited. Only paper of unusual irnportance will be accepted in these areas. A partial list of subjects to be stressed is: Phonon Electron Interactions, Quantum Optics, Optical Properties, Low Mobility Semiconductors—Amorphous and crystalline, and Non-linear Electron Transport including tunneling.
Vol. 8, No.13
Information M. Balkanski, Secretary, Organizing Committee, Laboratoire de Physique des Solides, Faculte des Sciences - Tour 13, 9~Quai Saint-Bernard, Paris, 5, France. 22—26 June 1970 Gordon Research Conferences, Holderness School, Plymouth, New Hampshire. Crystal Growth
The deadline for the submission of ABSTRACTS will be about 15 April 1970.
W.G. Pfann, Co-chairman, Robert L. Parker, Co-chairman. 22 June 1970
The Organizing Committee reserves the right to limit attendance at the Conference to 750 participants.
R.F.. Sekerka, ‘Phenomenological theory of growth from the melt”; S. Coriell, ‘Morphological stability of ice crystals in aqueous solutions”; D. Uhlmann, ‘Crystallization and melting in
Information: Marshall I. Nathan, Secretary, International Conference on the Physics of Semiconductors, IBM Thomas J. Watson Research Center, Box 218, Yorktown Heights, New York, 10598, U.S.A.
glass-forming systems”; H. Gatos, ‘Crystal growth from the melt with emphasis on aspects of the growth interface.” 23 June 1970 (K~A.Jackson, discussion leader): A,A. Chernov, “Theory of crystal growth from solutions and in the presence of impurities”; J. Verhoeven, ‘Controlled solidification and melting experiments in concentrated alloys”; W.A. Tiller, “Crystallizati on interfaces —their energetics, kinetics and topography.”
19—23 July 1971 International Conference on Light Scattering in Solids Paris, France The purpose of this Conference is to bring together specialists interested in the field of condensed matter, its phase transformations, elementary excitations and the methods and problems of studying the fundamental behaviour of interacting systems via light scattering. The programme is planned for the following subjects: light (Rayleigh, Brillouin, Raman) scattering b~’ elementary excitations in solids such as plasmons, phonons, single particle electron excitations, and magnons; mechanism of light scattering; critical phenomena, phase transitions iii solids; lattice defects and disordered systems; metals and heavily doped systems; stimulated Raman scattering; new experimental methods,
24 June 1970 L.G, Van Uitert, “Growth of crystals for magnetic and optical applications”; H. Reiss, “Mobilities of nulcei and islands oi outgrowth during formation of hetero-epitaxial films from the vapour”; R.S. Wagner and R.J.H. Voorhoeve, “Nucleation and growth of cadmium from the vapor.” 25 June 1970
J•J~Tietjen, “Vapor phase growth of 3—5 compounds”; B.W. Batterman, “Assessment of crystal perfection”; R.E. Hanneman, “Diamonds, meteorites and the moon.” v