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1113. Utilization of the technique of proton backscattering and channelling for investigation of radiation damage in CsI(T1) crystals
Classified abstracts
1113-l 127
irradiation at room temperature is investigated. radiation defects at annealing is also studied. _ E Yu Brailovskiv
et al. Rad Damaae
41-42 (in Russ&.
’
in Solids. , Coll. ,
Behaviour
of
Vol 1., Kiev 1974.
16 1113. Utilization of the technique of proton backscattering and channelling for investigation of radiation damage in CsI(T1) crystals. (USSR) Radiation defects in CsI(T1) single crystal have been generated by a
100 keV nroton beam with current density of 20 MA/cm*. Analysis of the defects was performed with the aid of backscattering and-channelling of protons. V S Kulikanskas and E T Shipatov, Rep of 5th All-Union Conf of Phys Interact of Charged Part with Single Cryst, Moscow University 1974, 430-436 (in Russian). 16 1114. Proton microscopy investigation of kinetics of damage and annealing of silicon and germanium single crystals in conditions of ion bombardment. (USSR)
Si and Ge single crystals were subjected to bombardment by mixed ion beam consisting of protons with 80 keV energy and ions of residual gases with a broad energy spectrum of 5 to 70 keV with a maximum at 40 keV. Kinetics of damage of crystalline lattice was determined from relative variations in depth of axial (111) shadow protongrams. V G Zlobin et al, Radiation Damage in Solids, Coll, Vol 1, Kiev 1974, 21-22 (in Russian). 1115. Formation
16 of electrically active surface centres at irradiation of
Si by low-energy ions. (USSR) Using the method of measurement of field effect and photoconductivity, spectra of surface electron states and annealing of radiation defects are investigated in Si irradiated with doses of 10’ to 10“’ ion/cm2 by He+ and Ar+ ions with energy ranging from lo* to lo3 eV. A P Dubchak and V S Lysenko, Rad Damage in Solids, Coil, Kiev 1974, 5-6 (in Russian). 1116. Investigation silicon. (USSR)
of spectrum of optical radiation at bombardment
A A Arifov and M S Saidov. Reu of Tashkent Polvtech 1973, 59-63 (in Russian). _ _ 1122. Evaluation of sorption rate measurements
Damage in Solids, Coll,
Vol 1, Kiev 1974, 16
of neutral particles radiation on solid target. (USSR)
generated
at action
of laser
The results of investigation of characteristics of neutral hydrogen and deuterium atoms, released at action of laser single pulse on solid target of zirconium hydride and deuteride, are presented. The experiments were performed with the aid of a time-of-flight mass spectrometer at a residual gas pressure of 5 x 10e6 torr. It is noted that laser plasma can be used as an intensive source of high-energy neutral atoms. Yu A Bykovskiy et al, Zh Tekh Fiz, 44 (12), 1974, 2623-2624 (in Russian). 16 1118. Features of reflection of high-current beam of relativistic electrons from conducting surface. (USSR)
The results of exoeriments on reflection of high-current beam of relativistic electrons with energies of 0.6 to 1 MeV from conducting surface at air pressure providing beam self-focusing are presented. It is shown that at a pressure of 9 x lo-’ torr and beam incidence angle up to 30” the beam reflection occurs at low losses. AN Didenko et al, Zh Tekh Fiz, 44 (12), 1974,2613-2615 (in Russian). of silicon surface by low-energy
16 ions in air and
Kinetics of silicon sputtering is investigated in conditions of a low vacuum of lo- 1 to 10 torr. The results of investigation of removal of thin dielectric films from silicon surface, the state of which is observed in an emission microscope, are presented. A Grigonis, Scient Rep of High School of Litva SSR, Electrotech Automat, No 8, 1972, 152-166 (in Russian).
Inst. No 106.
16 by computer. (Hungary)
A method has been developed for measuring the sorption rate of simple hydrocarbons on porous materials of large surface. To eliminate the role of convection and diffusion in the intergranular space, the sorption rate versus time was measured on a single spherical adsorbent particle at an approximately constant external concentration ensured by flow of gas mixture. K Vrga and P Feies.. Magyar (in Hungarian).
Kemikusok
Lapja, 29 (3), 1974, 152-l 54
1123. The relation between compositions flows. (USSR)
of adsorbing
16 and desorbing
The relation between compositions of adsorbing and desorbing flows is investigated experimentally using a mass spectrometer. Space distribution of flows of NaCl monomers and Na2C12 dimers from effusion cells of various designs is examined. In the second series of experiments the composition of desorbing flow from a tantalum target was analysed in dependence on target temperature. Yu A Gelman et al, Zh Tekh Fiz, 44 (lo), 1974,2192-2197 (in Russian). 18. GASEOUS
V I Bendikov et al, Radiation 24-25 (in Russian).
1119. Bombardment argon. (USSR)
Using an ion-structural analysis, _ distribution of radiation defects and impurities in Si layers bombarded with Si and B ions at doses 10’3-1018 ion/cm2 is investigated A K Gnap et al, Phys Technol Probi Kybernetics, Coll, Kiev 1973,62-77 (in Russian). 16 1121. Some problems of complex diffusion doping of semiconductors from gas phase. (USSR) Equilibrium in two-phase multi-component system crystal-gas is studied with the aim to determine parameters of semiconductor doping from gas phase.
16 of
Optical radiation is investigated which is generated at bombardment of silicon by protons, deuterons and alpha particles. The character of spectrum at bombardment by 25 to 100 keV protons shows that the radiation obeys the Wien law and possesses thermal origin corresponding to temperatures 2300 to 4200 K.
1117. Investigation
16 1120. Radiation damage of silicon at ion doping. (USSR)
and
ELECTRONICS 18
1124. Measurement of velocity of movement emission from cathode flare plasma. (USSR)
of boundary of electron
The velocity of motion of boundary of electron emission from cathode flare plasma is measured in a system with point cathode and hemispherical anode of 4 mm radius. It is found that the velocity of motion of boundary of electron emission from cathode flare plasma is 2.4 x lo4 m/s and ;t does not depend on amplitude of applied voltage and time. D I Proskurovksir of Accel Electrons,
and V P Rotshtesn, Power Nanosec Pulse Sources CON, Nauka Nov%birsk 1974, 59-62 (in Russian).
1125. Distribution of concentration charged particles. (USSR)
of neutrals in plasma
18 sources of
A calculation of distribution of concentration of neutrals in plasma sources of charged particles has been made for diffusion and directflight regimes of motion. Formulas for calculation of concentration fields in axially-symmetric cases have been derived. The results of calculation agree well with the experimental data obtained with the probe method. V T Barchenko and A A Potsar, Rep of Leningrad Electrotech 140, 1974, 63-71 (in Russian). 1126. On utilization of sliding discharge electron emitter. (USSR)
in vacuum
Znst, No
18 as a controlled
Using the methods of high-voltage nanosecond pulse technique, volt-ampere characteristics of vacuum diodes are investigated, in which plasma of sparks of completed and uncompleted discharge on surface of dielectric with high dielectric permittivity is used as a cathode. It is shown that at utilization of completed discharge highe I current densities and higher rates of current rise are obtained. S P Bugaev and V G Shpak, Power Nanosec Pulse Sources of Accel Electrons, Coil, Nauka Novosibirsk 1974, 71-76 (in Russian). 1127. Physico-chemical investigation metals and alloys. (USSR)
of
thermionic
properties
18 of
Experimental data on thermionic properties of metals, alloys and compounds in polycrystalline and single crystal states are considered. 391
1113-l 127
irradiation at room temperature is investigated. radiation defects at annealing is also studied. _ E Yu Brailovskiv
et al. Rad Damaae
41-42 (in Russ&.
’
in Solids. , Coll. ,
Behaviour
of
Vol 1., Kiev 1974.
16 1113. Utilization of the technique of proton backscattering and channelling for investigation of radiation damage in CsI(T1) crystals. (USSR) Radiation defects in CsI(T1) single crystal have been generated by a
100 keV nroton beam with current density of 20 MA/cm*. Analysis of the defects was performed with the aid of backscattering and-channelling of protons. V S Kulikanskas and E T Shipatov, Rep of 5th All-Union Conf of Phys Interact of Charged Part with Single Cryst, Moscow University 1974, 430-436 (in Russian). 16 1114. Proton microscopy investigation of kinetics of damage and annealing of silicon and germanium single crystals in conditions of ion bombardment. (USSR)
Si and Ge single crystals were subjected to bombardment by mixed ion beam consisting of protons with 80 keV energy and ions of residual gases with a broad energy spectrum of 5 to 70 keV with a maximum at 40 keV. Kinetics of damage of crystalline lattice was determined from relative variations in depth of axial (111) shadow protongrams. V G Zlobin et al, Radiation Damage in Solids, Coll, Vol 1, Kiev 1974, 21-22 (in Russian). 1115. Formation
16 of electrically active surface centres at irradiation of
Si by low-energy ions. (USSR) Using the method of measurement of field effect and photoconductivity, spectra of surface electron states and annealing of radiation defects are investigated in Si irradiated with doses of 10’ to 10“’ ion/cm2 by He+ and Ar+ ions with energy ranging from lo* to lo3 eV. A P Dubchak and V S Lysenko, Rad Damage in Solids, Coil, Kiev 1974, 5-6 (in Russian). 1116. Investigation silicon. (USSR)
of spectrum of optical radiation at bombardment
A A Arifov and M S Saidov. Reu of Tashkent Polvtech 1973, 59-63 (in Russian). _ _ 1122. Evaluation of sorption rate measurements
Damage in Solids, Coll,
Vol 1, Kiev 1974, 16
of neutral particles radiation on solid target. (USSR)
generated
at action
of laser
The results of investigation of characteristics of neutral hydrogen and deuterium atoms, released at action of laser single pulse on solid target of zirconium hydride and deuteride, are presented. The experiments were performed with the aid of a time-of-flight mass spectrometer at a residual gas pressure of 5 x 10e6 torr. It is noted that laser plasma can be used as an intensive source of high-energy neutral atoms. Yu A Bykovskiy et al, Zh Tekh Fiz, 44 (12), 1974, 2623-2624 (in Russian). 16 1118. Features of reflection of high-current beam of relativistic electrons from conducting surface. (USSR)
The results of exoeriments on reflection of high-current beam of relativistic electrons with energies of 0.6 to 1 MeV from conducting surface at air pressure providing beam self-focusing are presented. It is shown that at a pressure of 9 x lo-’ torr and beam incidence angle up to 30” the beam reflection occurs at low losses. AN Didenko et al, Zh Tekh Fiz, 44 (12), 1974,2613-2615 (in Russian). of silicon surface by low-energy
16 ions in air and
Kinetics of silicon sputtering is investigated in conditions of a low vacuum of lo- 1 to 10 torr. The results of investigation of removal of thin dielectric films from silicon surface, the state of which is observed in an emission microscope, are presented. A Grigonis, Scient Rep of High School of Litva SSR, Electrotech Automat, No 8, 1972, 152-166 (in Russian).
Inst. No 106.
16 by computer. (Hungary)
A method has been developed for measuring the sorption rate of simple hydrocarbons on porous materials of large surface. To eliminate the role of convection and diffusion in the intergranular space, the sorption rate versus time was measured on a single spherical adsorbent particle at an approximately constant external concentration ensured by flow of gas mixture. K Vrga and P Feies.. Magyar (in Hungarian).
Kemikusok
Lapja, 29 (3), 1974, 152-l 54
1123. The relation between compositions flows. (USSR)
of adsorbing
16 and desorbing
The relation between compositions of adsorbing and desorbing flows is investigated experimentally using a mass spectrometer. Space distribution of flows of NaCl monomers and Na2C12 dimers from effusion cells of various designs is examined. In the second series of experiments the composition of desorbing flow from a tantalum target was analysed in dependence on target temperature. Yu A Gelman et al, Zh Tekh Fiz, 44 (lo), 1974,2192-2197 (in Russian). 18. GASEOUS
V I Bendikov et al, Radiation 24-25 (in Russian).
1119. Bombardment argon. (USSR)
Using an ion-structural analysis, _ distribution of radiation defects and impurities in Si layers bombarded with Si and B ions at doses 10’3-1018 ion/cm2 is investigated A K Gnap et al, Phys Technol Probi Kybernetics, Coll, Kiev 1973,62-77 (in Russian). 16 1121. Some problems of complex diffusion doping of semiconductors from gas phase. (USSR) Equilibrium in two-phase multi-component system crystal-gas is studied with the aim to determine parameters of semiconductor doping from gas phase.
16 of
Optical radiation is investigated which is generated at bombardment of silicon by protons, deuterons and alpha particles. The character of spectrum at bombardment by 25 to 100 keV protons shows that the radiation obeys the Wien law and possesses thermal origin corresponding to temperatures 2300 to 4200 K.
1117. Investigation
16 1120. Radiation damage of silicon at ion doping. (USSR)
and
ELECTRONICS 18
1124. Measurement of velocity of movement emission from cathode flare plasma. (USSR)
of boundary of electron
The velocity of motion of boundary of electron emission from cathode flare plasma is measured in a system with point cathode and hemispherical anode of 4 mm radius. It is found that the velocity of motion of boundary of electron emission from cathode flare plasma is 2.4 x lo4 m/s and ;t does not depend on amplitude of applied voltage and time. D I Proskurovksir of Accel Electrons,
and V P Rotshtesn, Power Nanosec Pulse Sources CON, Nauka Nov%birsk 1974, 59-62 (in Russian).
1125. Distribution of concentration charged particles. (USSR)
of neutrals in plasma
18 sources of
A calculation of distribution of concentration of neutrals in plasma sources of charged particles has been made for diffusion and directflight regimes of motion. Formulas for calculation of concentration fields in axially-symmetric cases have been derived. The results of calculation agree well with the experimental data obtained with the probe method. V T Barchenko and A A Potsar, Rep of Leningrad Electrotech 140, 1974, 63-71 (in Russian). 1126. On utilization of sliding discharge electron emitter. (USSR)
in vacuum
Znst, No
18 as a controlled
Using the methods of high-voltage nanosecond pulse technique, volt-ampere characteristics of vacuum diodes are investigated, in which plasma of sparks of completed and uncompleted discharge on surface of dielectric with high dielectric permittivity is used as a cathode. It is shown that at utilization of completed discharge highe I current densities and higher rates of current rise are obtained. S P Bugaev and V G Shpak, Power Nanosec Pulse Sources of Accel Electrons, Coil, Nauka Novosibirsk 1974, 71-76 (in Russian). 1127. Physico-chemical investigation metals and alloys. (USSR)
of
thermionic
properties
18 of
Experimental data on thermionic properties of metals, alloys and compounds in polycrystalline and single crystal states are considered. 391