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1142. Nucleation, growth and texture of luminescent thin films of cadmium tungstate prepared by vacuum evaporation
Classified abstracts 1138--1152 30 1138. Molecular composition of vapours of elements in silicon epitaxial processes. (USSR) The thermodynamic analysis of the composition of vapours of elements in the temperature range of 800 to 1250°C and the partial pressure range of 2 x 10-3 to 2 x 10-11 torr is carried out. V I Shaebnev, Elektron Tekh Materialy, 5, 1970, 139-140 (in Russian). 30 1139. Preparation of silicon n-type films by sublimation in vacuum. (USSR) The structure and electrical characteristics of silicon films, doped with P and Sb, are investigated. The layers were prepared in oil-free vacuum at pressures below 10 -7 torr in the temperature range 1300 to 500°C on silicon discs oriented in the direction of the (111) axis. V A Tolomasov et al, Kristalogr, 15 (6), 1970, 1233-1238 (in Russian). 30 1140. TSEE spectra of differently produced SiO2 films. (Germany) Thermally stimulated electron emission of thermally grown and reactively sputtered SiO2 films is investigated in vacuum at 3 x 10-7 torr with an open multiplier as detector. It is found that films produced in oxygen by reactive sputtering at a pressure of 3 x 10-5 torr show very different behaviour. W Wild and H Glaefeke, Phys Stat Sol (a), 5 (I), April 1971, K27-K29. 30 1141. Reflection high energy electron diffraction patterns of twinned foe films. (Germany) Twinning in face-centred cubic nickel and cobalt films epitaxially grown on NaCI is studied using high energy electron diffraction. The evaporation was performed at pressure of 5 x 10 -3 torr by electron bombardment of a suspended drop of metal. R Zimmermnn ct al, Phys Stat Sol(a), 5 (I), April 1971, K5-K9. 30 1142. Nucleation, growth and texture of luminescent thin films of cadmium tungstate prepared by vacuum evaporation. (Germany) The intensity of luminescence of CdWO4 thin films prepared by vacuum evaporation at I0 8 torr is measured in relation to the annealing time. The results show that the process of film recrystallization may be related to the well-known theory of vapour-solid nucleation and growth. From this relationship, the successive steps of the film formation and the fibre texture are explained by applying the theory of adsorption and surface diffusion. (France) B Henriot et al, Phys Stat Sol (a), 5 (I), April 1971, 219-230 (in
French). 30 1143. The effect of antimony in magneto-optic films on manganese bismuth base. II. Measurement of some magnetic and magneto-optic properties. (Germany) Magnetic and magneto-optic properties of MnBil-~Sbx thin films prepared by vacuum evaporation are investigated. H R Muller, Phys Star Sol(a), 5 (1), April 1971, 177-181. 30 1144. The effect of antimony in magneto-optic thin films on manganese bismuth base. I. Film preparation and studies on the formation process. (Germany) The technique for preparing MnBi films for magneto-optic information storage is described. By adding antimony the system Mn-Bi is extended to a three-component one. The film components were deposited as single layers of bismuth, antimony, and manganese by thermal evaporation from tungsten boats in a vacuum of 1 to 3 x 10 -5 torr. A final coating of SiO was performed either before or after the thermal annealing. The film substrates were freshly cleaved mica foils and chemically cleaned glasses of various types. The thicknesses of the partial layers were checked by a film thickness monitor after calibrating by the multiple beam interference method and by polarography. The total film thickness, without surface protection layers, amounted to 800 ~,. Using Sb concentrations not exceeding critical value, conditions for the preparation of magneto-optic thin films are improved. A number of advantages could be obtained, for example, relatively low formation temperatures and short formation times, excellent film homogeneity and use of amorphous substrates instead of epitaxial materials. Films with surface protective layers of good quality show no significant difference whether the thermal formation of the vacuum-deposited three-layer-systems Bi-Sb-Mn takes place in vacuum or in air. H Sehroder et al, Phys Stat Sol (a), 5 (1), April 1971, 169-175.
30 1145. Deposition of high-ohmic films in a three-electrode system. (Germany) The construction and performance of a sputtering apparatus, Sputron II, coupled to a high-vacuum evaporation apparatus, B55, are described. The combined system is used for the coating of resistor cores. Some properties of tantalum films on glass and ceramic substrates are described. J Zweiniger et al, Feingeratetechn, 20 (1), 1971,45~6 (in German). 30 1146. Measuring and analytical methods for ferromagnetic films. (Czechoslovakia) The metallic ferromagnetic films appear as very promising for use in the field of recording techniques, replacing conventional media based on the magnetic properties of ferric oxide. Measuring and analytical methods for evaluation of thickness, magnetic and mechanical parameters, composition and structure of ferromagnetic films prepared by vacuum evaporation and plasma sputtering, are described. Z Piskaeek and J Vavra, Jemna Mech Optika, 16 (3), March 1971, 64-68 (in Czech). 30 1147. Investigation of processes of manufacture and application of dielectric films on the basis of aluminium nitride in MIS transistors. (USSR) Properties of dielectric films prepared by evaporation of aluminium nitride in vacuum and gaseous ambient of nitrogen and oxygen are described. Phase composition and features of film structure are investigated with the aid of optical, x-ray and electron diffraction methods. It is shown that the application of aluminium nitride in field effect transistors results in improvement of their parameters. I V Stepanov et ai, Elektron Tekh Upr Kachest Standart, 5, 1970, 51-60
(in Russian). 30 1148. Complex investigation of silicon nitride films deposited on silicon by pyrolysis in vacuum. (USSR) Electro-physical properties of silicon nitride films are investigated, which were prepared by pyrolysis of mixture of Sill4 and NH3 in vacuum at 8 x 10-3 torr and at 850 to 1050°C. V S Tulobchikov et al, Elektron Tekh Upr Kachest Standart, 5, 1970, 67-73 (in Russian). 30 1149. Evaluation of molecular weight of thin layers polymerized in the gas phase. (USSR) The dependence of the molecular weight of thin polymer layers condensed on a substrate, on the physical parameters of the polymerization process is presented. The radical mechanism of polymerization in the gaseous phase is considered. I G Domakhin and A G Sanoyan, Elektron Tekh Upr Kachest Standart, 5, 1970, 89-92 (in Russian). 30 1150. On the maximum evaporation rate from metal surfaces. (USSR) The maximum limiting evaporation rate from metal surfaces is evaluated on the basis of results of experiments on the destruction of thin metallic films by a laser beam. The ionization degree of evaporation products is measured in a vacuum chamber. V A Komotskiy, Zh Tekh Fiz, 41 (1), Jan 1971, 220-221 (in Russian). 30 1151. Some problems of performance in thin film deposition by evaporation and condensation in vacuum. (USSR) Criteria are presented which enable comparison of different systems for the vacuum deposition of thin films and selection of the optimum equipment for each practical requirement. An analysis of the more commonly used deposition systems shows that the most efficient system contains three substrate holders with planetary motion with respect to the evaporator. A S Valecv and V L Evdokimov, Elektron Tekh Mikroelektron, 4, 1970, 40-48 (in Russian). 30 1152. Utilization of thin silicon polymer films in the manufacture of cryotron circuits. (USSR) The production of thin polymer films by polymerization or organic compounds by means of electron or ion bombardment is considered. The films obtained by this method are uniform, have good adhesion to the surface, chemical stability, enhanced thermal stability, stability at low temperatures, absence of pores, and high dielectric characteristics. Thin polymer films are investigated which have been pro-
499
French). 30 1143. The effect of antimony in magneto-optic films on manganese bismuth base. II. Measurement of some magnetic and magneto-optic properties. (Germany) Magnetic and magneto-optic properties of MnBil-~Sbx thin films prepared by vacuum evaporation are investigated. H R Muller, Phys Star Sol(a), 5 (1), April 1971, 177-181. 30 1144. The effect of antimony in magneto-optic thin films on manganese bismuth base. I. Film preparation and studies on the formation process. (Germany) The technique for preparing MnBi films for magneto-optic information storage is described. By adding antimony the system Mn-Bi is extended to a three-component one. The film components were deposited as single layers of bismuth, antimony, and manganese by thermal evaporation from tungsten boats in a vacuum of 1 to 3 x 10 -5 torr. A final coating of SiO was performed either before or after the thermal annealing. The film substrates were freshly cleaved mica foils and chemically cleaned glasses of various types. The thicknesses of the partial layers were checked by a film thickness monitor after calibrating by the multiple beam interference method and by polarography. The total film thickness, without surface protection layers, amounted to 800 ~,. Using Sb concentrations not exceeding critical value, conditions for the preparation of magneto-optic thin films are improved. A number of advantages could be obtained, for example, relatively low formation temperatures and short formation times, excellent film homogeneity and use of amorphous substrates instead of epitaxial materials. Films with surface protective layers of good quality show no significant difference whether the thermal formation of the vacuum-deposited three-layer-systems Bi-Sb-Mn takes place in vacuum or in air. H Sehroder et al, Phys Stat Sol (a), 5 (1), April 1971, 169-175.
30 1145. Deposition of high-ohmic films in a three-electrode system. (Germany) The construction and performance of a sputtering apparatus, Sputron II, coupled to a high-vacuum evaporation apparatus, B55, are described. The combined system is used for the coating of resistor cores. Some properties of tantalum films on glass and ceramic substrates are described. J Zweiniger et al, Feingeratetechn, 20 (1), 1971,45~6 (in German). 30 1146. Measuring and analytical methods for ferromagnetic films. (Czechoslovakia) The metallic ferromagnetic films appear as very promising for use in the field of recording techniques, replacing conventional media based on the magnetic properties of ferric oxide. Measuring and analytical methods for evaluation of thickness, magnetic and mechanical parameters, composition and structure of ferromagnetic films prepared by vacuum evaporation and plasma sputtering, are described. Z Piskaeek and J Vavra, Jemna Mech Optika, 16 (3), March 1971, 64-68 (in Czech). 30 1147. Investigation of processes of manufacture and application of dielectric films on the basis of aluminium nitride in MIS transistors. (USSR) Properties of dielectric films prepared by evaporation of aluminium nitride in vacuum and gaseous ambient of nitrogen and oxygen are described. Phase composition and features of film structure are investigated with the aid of optical, x-ray and electron diffraction methods. It is shown that the application of aluminium nitride in field effect transistors results in improvement of their parameters. I V Stepanov et ai, Elektron Tekh Upr Kachest Standart, 5, 1970, 51-60
(in Russian). 30 1148. Complex investigation of silicon nitride films deposited on silicon by pyrolysis in vacuum. (USSR) Electro-physical properties of silicon nitride films are investigated, which were prepared by pyrolysis of mixture of Sill4 and NH3 in vacuum at 8 x 10-3 torr and at 850 to 1050°C. V S Tulobchikov et al, Elektron Tekh Upr Kachest Standart, 5, 1970, 67-73 (in Russian). 30 1149. Evaluation of molecular weight of thin layers polymerized in the gas phase. (USSR) The dependence of the molecular weight of thin polymer layers condensed on a substrate, on the physical parameters of the polymerization process is presented. The radical mechanism of polymerization in the gaseous phase is considered. I G Domakhin and A G Sanoyan, Elektron Tekh Upr Kachest Standart, 5, 1970, 89-92 (in Russian). 30 1150. On the maximum evaporation rate from metal surfaces. (USSR) The maximum limiting evaporation rate from metal surfaces is evaluated on the basis of results of experiments on the destruction of thin metallic films by a laser beam. The ionization degree of evaporation products is measured in a vacuum chamber. V A Komotskiy, Zh Tekh Fiz, 41 (1), Jan 1971, 220-221 (in Russian). 30 1151. Some problems of performance in thin film deposition by evaporation and condensation in vacuum. (USSR) Criteria are presented which enable comparison of different systems for the vacuum deposition of thin films and selection of the optimum equipment for each practical requirement. An analysis of the more commonly used deposition systems shows that the most efficient system contains three substrate holders with planetary motion with respect to the evaporator. A S Valecv and V L Evdokimov, Elektron Tekh Mikroelektron, 4, 1970, 40-48 (in Russian). 30 1152. Utilization of thin silicon polymer films in the manufacture of cryotron circuits. (USSR) The production of thin polymer films by polymerization or organic compounds by means of electron or ion bombardment is considered. The films obtained by this method are uniform, have good adhesion to the surface, chemical stability, enhanced thermal stability, stability at low temperatures, absence of pores, and high dielectric characteristics. Thin polymer films are investigated which have been pro-
499