Classified abstracts 105-123 materials and electrical properties of thin film TiO2 capacitors. F Z Keister, IEEETrans on Componentparts, CP-12, 1965, 16-20.
installed in a vacuum chamber. G Hoke, AIAA Journal, 3, 1965, 947-951.
3O 105. Some problems associated with the procedure of producing and studying thin metallic films. (USSR) M V Belous et al, Fizika, 8 (2), 1965, 34-39, (in Russian). 3O 106. Thermal cycling and heat damage tests of thin-film cadmium sulphide solar cells. (USA) J G Ewashinka and G K Stephenson Jr, NASA, TN/D3038, 1965,
30 : 49 112. Gold-plating procedure for a thin window on germanium y-ray spectrometers. (USA) F J Janarek et al, Rev Scient [nstrum, 36 (10), Oct 1965, 1501-1502. 30 : 49 113. Silver plating as a lubricant in ultra-high vacuum systems (USA) A Contaldo, Rev Scient Instrum, 36 (10), Oct 1965, 1510-1511. 30 114. Ionic plasma spraying. (Germany) J W Nickerson and R Moseson, Vakuum-Technik, 14 (6), Sept 1965,
pages 1-18. 30 : 41 107. The resistivity of evaporated permalloy films. (Great Britain) The variations of the resistivity of evaporated permalloy films with growth rate, substrate temperature, composition and pressure during deposition in a particular vacuum system are described together with some experiments on the resistivity of films during growth. It is shown that resistivity at the deposition temperature increases with growth rate, substrate temperature and pressure during deposition. These resistivity variations can be qualitatively explained in terms of the variation of grain size and gas content. ( Great Britain) (Authors) J C Brice and U Pick, Vacuum, 15 (8), Aug 1965, 409-412. 30 : 41 108. Structure and orientation of barium oxide films deposited on tungsten. ( USSR) A method employing electron diffraction was used to examine the structure and orientation of monomolecular and thicker (5 to 20 molecular layers) barium oxide films on tungsten. The barium oxide was produced and deposited from barium carbonate contained in a platinum tube. After pumping and degassing, the pressure in the apparatus, which was equipped with molybdenum and titanium getters, was about 10 -9 torr. The results showed that, after heat treatment, the molecules in the monomolecular layer were uniformly distributed. The thicker barium oxide layers had a crystal structure, the orientation being parallel to the tungsten surface. A change of crystal orientation was observed when a thick layer was deposited on a uniform monomolecular structure. Features that relate to the structure of the films and the diffraction patterns obtained are discussed, a diagram of the apparatus is depicted, and photographs of the diffraction patterns together with various experimental data are presented. D A Gorodetskii et al, Fiz Tver Tela, 7 (9), 1965, 2780, (in
Russian). 30 : 41 109. Formation of thin films of intermetallic compounds by a sputtering method. (USSR) The possibility of obtaining thin monocrystallinc films of InSb and CdS by cathode sputtering was investigated. A specially adapted glass tube was used as a container for the ion bombardment process, the tube being first pumped down to 10 -5 torr and then charged with neon up to a pressure of 10 -3 to 10 -~ torr. The substrates, which were heated to not less than 300 °C for InSb and to not less than 500°C for CdS, consisted of monocrystals of rock-salt, pyrophillite and mica. An electron microscope was used to investigate the structure of the films obtained. It was found that InSb and CdS films deposited on rock-salt had basically a cubic structure, various kinds of orientation being observed, of which particulars are given. Dependent on the sputtering conditions, the InSb films obtained were either n or p types, the values of specific resistance and photosensitivity being close to those applicable to bulk samples. (USSR) V E Yurasova et al, Fiz Tver Tela, 7 (9), 1965, 2875, (in Russian). 30 : 49 110. Thin film thermoelectrics. (USA) Description is given of thin films of thermoelectric alloys formed by vacuum evaporation technique. G Abowitz et al, Semiconductor Products and Solid State Tech, 8,
1965, 18-22. 30 : 49 111. A thermal vacuum technique for measuring the solar ahsorptance of satellite coatings as a function of angle of incidence. (USA) Development of an experimental technique for measuring the solar absorptance of a satellite coating as a function of angle of incidence is described. A thermal vacuum method is used to measure the equilibrium temperature of a coated sample as the sample is turned with respect to the incident beam by means of a rotational apparatus 50
173-176. 30 : 49 115. Preparation of Pb Te semiconductor films by the variable composition sample method. (USSR) L S Palatnik and V K Sorokin, Fizika, 8 (3), 1965, 48-52, (in
Russian).
31. Evacuation and sealing 31 : 17
116. Determination of losses when helium evaporates in a Dewar container without nitrogen cooling. (USSR) Liquid helium is usually conveyed and stored in vacuum-insulated vessels provided with a shield cooled with liquid nitrogen or liquid hydrogen. An alternative method now proposed uses the cooling effect of the evaporating helium by joining the cooling shield to the neck of the vessel through which the ascending helium vapour passes. The space that acts as insulation is evacuated down to a pressure not greater than 1 × 10 -4 torr and no additional nitrogen cooling is needed. The theoretical heat losses of the system are considered and it is stated that helium loss by evaporation in the type of container now proposed is only slightly higher than when nitrogen cooling is used. (USSR) O P Anashkin, Inzhen -Fiz Zh, 9 (1), 1965, 91, (in Russian). 31:48 117. The use of vacuum in thermal insulation. (France) Depending on whether the insulating material is compact, homogeneous, granular or even complex, heat can be transferred in different ways. The gases in the insulating material play a part in the thermal transfer, by gaseous conduction or by convection processes. When the technical requirements demand a high degree of insulation, it is shown that by evacuating the considered insulation one can decrease the rate of heat transfer. (France) J P Debbane, Le Vide, 119, Sept-Oct 1965, 323-327, (in French). 31 118. Small-signal model of the parallel-plane vacuum diode. (USA) J S Linder, Electronics Letters, 1, 1965, 141-142.
32. Nucleonics 32 119. Generation and characteristics of plasma wind-tunnel streams.
(usA) D F Hall et al, AIAA Journal, 3 (8), Aug 1965, 1490-1497. 32 120. High current steady state coaxial plasma accelerators. T F Stratton, AIAA Journal, 3 (10), Oct 1965, 1961-1963.
(USA)
32 121. Device for cementing accelerator vacuum chambers. (USSR) S P Bugaev and V P Ponomarev, Pribory i Tekh Eksper, 3, 1964, 215,
(in Russian). 122. A betatron vacuum chamber for experimental work.
32
(Czecho-
slovakia) Anon, Pribory i Tekh Eksper, 10 (3), 1965, 1735, (in Russian). 32 123. The Stanford two-mile accelerator vacuum system. S R Conviser, Trans Nucl Sci, 12 (3), 1965, 699-704.
(USA)
33. General physics and electronics 33 : 18 Source for propagation of hydrogen ions at low gas pressures. See abstract number 32.