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117. Technology of semiconductor and electrovacuum engineering.
Classified Classified
abstracts
abstracts
115-238
115-124 on this page
Editor’s note The label immediately following the title of each item denotes country or origin of publication, and that at the end of each abstract indicates country of origin of work (where known).
I. General vacuum 13. VACUUM
science and engineering
APPLICATIONS
115. 6th Scientific and technological metallic and nonmetallic materials.
13 conference on diffusion sealing of
(USSR) A conference on diffusion sealing of metallic and nonmetallic materials was organized in Moscow, 1969, by the Research Laboratory for Diffusion Sealing in Vacuum, on the occasion of its tenth year of successful operation. It was announced that number of materials sealed by diffusion in vacuum exceeded 400 pairs. Using diffusion in vacuum, high quality seals were obtained for ceramic-tokovar, -copper, and -titanium, molybdenum-to-niobium, quartz-togold-to-bronze, platinum-to-titanium, silver-to-stainless copper, steel etc. Dimensions of the seals range from a few microns to a few metres. A short review of the conference papers is presented including: the influence of conditions during sealing on seal properties; the mechanism of reduction of oxides by solid carbon during diffusion sealing of carbon to metals; the dependence of aluminium and copper oxidation rate on oxygen partial pressure during diffusion microsealing in vacuum; the investigation of the transition layer in vacuumtight borosilicate glass-to-kovar seals; the investigation of the properties of porous tungsten sealed by diffusion in vacuum; and the improvement of metal and alloy properties by vacuum thermal treatment based on the filling of microcavities resulting in more tensile and plastic metal. N F Kaxakov and V N Kaxakov, Mushinostroenie, Nr 1, 1970, 186-l 89 (in Russian). 13 116. Vademecum
of electronics application.
(Poland) The application of electronics in different areas is reviewed. Basic knowledge on vacuum tubes, transistors and microelectronics is given. Electronic instruments are described. B Busko, book publd by Wydawnictwo Ministerstwa Oborony Narodowej, Warszawa 1970,663 pages (in Polish). 117. Technology
of semiconductor
and
electrovacuum
13 engineering.
(USSR) The classification of machines used in electrovacuum and semiconductor manufacturing is given. Special interest is devoted to problems of technological processes for obtaining high quality surfaces. Vacuum and gas apparatus used in semiconductor technology are described. A B Kondratev, book pub/d by Vysshaya Skola, b4oseow, 1969, 328 THEORY
OF GASES
14 118. Interdiffusion
P E Smetin Russian).
et al, Zh Tekh Fiz, 40 (8), Aug
1970,
1735-1742
(in 14
119. Diffusion of inert gas metastable
atoms.
(USSR) The diffusion of inert gas metastable atoms is experimentally investigated. Collisions of metastable atoms of inert gases with the glass wall of a discharge tube are considered. V N Lisitsyn et al, Optika Spektro, 29 (2), Aug 1970, 226-231 (in Russian). 15. FLUID
DYNAMICS 15
120. Plane flow of gas at arbitrary Knudsen number.
(USSR) Using an iterative method, the plane flow of a gas at arbitrary Knudsen number is calculated. P E Suetin and S G Skakun, Izv VVZ Fir, No 8, 1970, 144-146 (in Russian).
15 121. Determination vacuum conditions.
of velocity field in an axial stage entrance under
(USSR) A method of calculating the gas velocity field in a vacuum entrance stage as dependent on the flow regime in the flowing stage of an axial compressor working under vacuum conditions is presented. Calculated values are compared with experimental data. I Ya Sukhomlinov et al, Mashinostroenie, No 1, 1970, 72-76 (in Russian).
1.5 122. On the possibility of absolute measurement of gas flow velocity. (Poland) A method of absolute measurement of gas flow velocity is proposed,
based on the thermal signal emitted by a thin wire fed with a modulated current. The thermal signal, being transported with the same velocity as the gas, arrives at the temperature detector developing an electric signal, whose phase shift is proportional to the gas flow velocity. Theoretical calculations have been tested experimentally. J Kielbasa, Bull Acad Pol Sci Ser Sci Tech, 18 (5), 1970, 199-204. 16. GASES AND SOLIDS 16 123. Oxidation kinetics of selenium.
pages (in Russian). 14. KINETIC
vacuum vessels are evacuated to 10ee torr and then the test gases are introduced to a pressure of 300-500 torr. Experimental results are compared with those obtained by other investigators using other methods. The effect of the dependence of interdiffusion on gas concentrations is considered.
of gases in He-Ar, HZ-He and H,-Ar
systems.
I.
(USSR) For improved technological processes, it is desirable to know the interdiffusion coefficients of gases at high temperatures. Interdiffusion coefficients of gases in He-Ar, HZ-He and H,-Ar systems are measured in the broad temperature range of 300 to 700°K by the two volume method. Composition of gases was analyzed by a mass spectrometer. A stainless steel experimental apparatus consisting of two vessels with volumes of 187 and 217 cm3 connected with a capillary, of length 127 mm and inner diameter 1.9 mm, is described. The vacuum vessels and capillary are placed in a thermostat maintaining the temperature with a precision of 05°C. Mercury gauges are used for pressure measurement in the diffusion chambers. The inlet system of the mass spectrometer operates in a molecular regime. The
(USSR) The oxidation kinetics of selenium were studied experimentally. Oxygen-free samples of selenium cleaned by repeated vacuum distillation at 800°C were prepared and tested in vacuum at lo-’ torr after oxidation in air at 215°C. It is found that the instability of the electrical parameters of selenium is due to oxygen diffusion in the selenium. S I Mekhtieva et al, Neorg Mater, 5 (9), 1969, 1522-1525 (in Russian). 124. Investigation of interaction method. (USSR)
16 of oxygen with rhenium by the flash
Interaction of gaseous oxygen with a polycrystalline rhenium surface was investigated with the aid of a flash method and time-of-flight mass spectrometer. The rhenium ribbon was placed in a copper chamber cooled by liquid nitrogen and coupled to the mass spectrometer ion source. Gas desorbed from the ribbon flowed through the ion source, where it was ionized by an electron beam and sorbed by the vacuum chamber walls, on which titanium was periodically 139
abstracts
abstracts
115-238
115-124 on this page
Editor’s note The label immediately following the title of each item denotes country or origin of publication, and that at the end of each abstract indicates country of origin of work (where known).
I. General vacuum 13. VACUUM
science and engineering
APPLICATIONS
115. 6th Scientific and technological metallic and nonmetallic materials.
13 conference on diffusion sealing of
(USSR) A conference on diffusion sealing of metallic and nonmetallic materials was organized in Moscow, 1969, by the Research Laboratory for Diffusion Sealing in Vacuum, on the occasion of its tenth year of successful operation. It was announced that number of materials sealed by diffusion in vacuum exceeded 400 pairs. Using diffusion in vacuum, high quality seals were obtained for ceramic-tokovar, -copper, and -titanium, molybdenum-to-niobium, quartz-togold-to-bronze, platinum-to-titanium, silver-to-stainless copper, steel etc. Dimensions of the seals range from a few microns to a few metres. A short review of the conference papers is presented including: the influence of conditions during sealing on seal properties; the mechanism of reduction of oxides by solid carbon during diffusion sealing of carbon to metals; the dependence of aluminium and copper oxidation rate on oxygen partial pressure during diffusion microsealing in vacuum; the investigation of the transition layer in vacuumtight borosilicate glass-to-kovar seals; the investigation of the properties of porous tungsten sealed by diffusion in vacuum; and the improvement of metal and alloy properties by vacuum thermal treatment based on the filling of microcavities resulting in more tensile and plastic metal. N F Kaxakov and V N Kaxakov, Mushinostroenie, Nr 1, 1970, 186-l 89 (in Russian). 13 116. Vademecum
of electronics application.
(Poland) The application of electronics in different areas is reviewed. Basic knowledge on vacuum tubes, transistors and microelectronics is given. Electronic instruments are described. B Busko, book publd by Wydawnictwo Ministerstwa Oborony Narodowej, Warszawa 1970,663 pages (in Polish). 117. Technology
of semiconductor
and
electrovacuum
13 engineering.
(USSR) The classification of machines used in electrovacuum and semiconductor manufacturing is given. Special interest is devoted to problems of technological processes for obtaining high quality surfaces. Vacuum and gas apparatus used in semiconductor technology are described. A B Kondratev, book pub/d by Vysshaya Skola, b4oseow, 1969, 328 THEORY
OF GASES
14 118. Interdiffusion
P E Smetin Russian).
et al, Zh Tekh Fiz, 40 (8), Aug
1970,
1735-1742
(in 14
119. Diffusion of inert gas metastable
atoms.
(USSR) The diffusion of inert gas metastable atoms is experimentally investigated. Collisions of metastable atoms of inert gases with the glass wall of a discharge tube are considered. V N Lisitsyn et al, Optika Spektro, 29 (2), Aug 1970, 226-231 (in Russian). 15. FLUID
DYNAMICS 15
120. Plane flow of gas at arbitrary Knudsen number.
(USSR) Using an iterative method, the plane flow of a gas at arbitrary Knudsen number is calculated. P E Suetin and S G Skakun, Izv VVZ Fir, No 8, 1970, 144-146 (in Russian).
15 121. Determination vacuum conditions.
of velocity field in an axial stage entrance under
(USSR) A method of calculating the gas velocity field in a vacuum entrance stage as dependent on the flow regime in the flowing stage of an axial compressor working under vacuum conditions is presented. Calculated values are compared with experimental data. I Ya Sukhomlinov et al, Mashinostroenie, No 1, 1970, 72-76 (in Russian).
1.5 122. On the possibility of absolute measurement of gas flow velocity. (Poland) A method of absolute measurement of gas flow velocity is proposed,
based on the thermal signal emitted by a thin wire fed with a modulated current. The thermal signal, being transported with the same velocity as the gas, arrives at the temperature detector developing an electric signal, whose phase shift is proportional to the gas flow velocity. Theoretical calculations have been tested experimentally. J Kielbasa, Bull Acad Pol Sci Ser Sci Tech, 18 (5), 1970, 199-204. 16. GASES AND SOLIDS 16 123. Oxidation kinetics of selenium.
pages (in Russian). 14. KINETIC
vacuum vessels are evacuated to 10ee torr and then the test gases are introduced to a pressure of 300-500 torr. Experimental results are compared with those obtained by other investigators using other methods. The effect of the dependence of interdiffusion on gas concentrations is considered.
of gases in He-Ar, HZ-He and H,-Ar
systems.
I.
(USSR) For improved technological processes, it is desirable to know the interdiffusion coefficients of gases at high temperatures. Interdiffusion coefficients of gases in He-Ar, HZ-He and H,-Ar systems are measured in the broad temperature range of 300 to 700°K by the two volume method. Composition of gases was analyzed by a mass spectrometer. A stainless steel experimental apparatus consisting of two vessels with volumes of 187 and 217 cm3 connected with a capillary, of length 127 mm and inner diameter 1.9 mm, is described. The vacuum vessels and capillary are placed in a thermostat maintaining the temperature with a precision of 05°C. Mercury gauges are used for pressure measurement in the diffusion chambers. The inlet system of the mass spectrometer operates in a molecular regime. The
(USSR) The oxidation kinetics of selenium were studied experimentally. Oxygen-free samples of selenium cleaned by repeated vacuum distillation at 800°C were prepared and tested in vacuum at lo-’ torr after oxidation in air at 215°C. It is found that the instability of the electrical parameters of selenium is due to oxygen diffusion in the selenium. S I Mekhtieva et al, Neorg Mater, 5 (9), 1969, 1522-1525 (in Russian). 124. Investigation of interaction method. (USSR)
16 of oxygen with rhenium by the flash
Interaction of gaseous oxygen with a polycrystalline rhenium surface was investigated with the aid of a flash method and time-of-flight mass spectrometer. The rhenium ribbon was placed in a copper chamber cooled by liquid nitrogen and coupled to the mass spectrometer ion source. Gas desorbed from the ribbon flowed through the ion source, where it was ionized by an electron beam and sorbed by the vacuum chamber walls, on which titanium was periodically 139