Classified
abstracts
1169-I
183
1169. Regularities of structure formation and properties prepared by vacuum evaporation of copper alloys. (USSR)
30 of films
Using the methods of measurement of electrical resistance and electron microscopy with carbon replication, regularities of formation of structure of vacuum condensed films of Cu alloys are investigated which contain elements with widely differing vapour pressure as Mg, Ni, Pd, Co and Ti. A model of copper alloy condensate structure is presented which describes well the experimental data. V I Popov, Fiz Met Metalloved,
37 (3), 1974, 560-564
(in Russian).
30 1170. Investigation of structure and some physical properties of indium phosphide films deposited by vacuum evaporation. (USSR) Optical properties of polycrystalline indium phosphide films, prepared by evaporation in vacuum of individual components, are investigated. Ya A Ugay et al, Solid-state Radioelectron, Coil, Voronezh 1973, 54-62 (in Russian). 30 1171. Prospects of utilization of germanium films in microelectronics and development of methods of their preparation. (USSR)
Prospects of utilization of germanium films in integrated circuits are discussed. Chemical and vacuum methods of germanium film preparation are compared. Vacuum deposition of germanium films is most efficient at utilization of high-density molecular beams or at ionplasma sputtering. L N Aleksandrov, Mikroelektronika, 3 (3), 1973,239-253 (in Russian). 30 1172. Structural investigations of epitaxial gold films with the aid of ion-graphical method. (Germany) The gold films, deposited in a vacuum of 10e5 torr on single crystal NaCl and mica substrates with the rate of 8 to 250 A/s, have been investigated. The beam of protons or Li+ ions with energy ranging from 0.5 to 1.3 MeV was directed to the film and back scattered ions were detected with the aid of photographic plate. Film orientation, defects of packing, and misorientation of separate grains have been determined from ion-gramms of epitaxial films. G Gotz et al, Wiss Zeitsch F Schiller Univ Jena Math-Naturwiss Rer, 22 (l/2),
1973, 87-97 (in German).
1173. Preparations
30 of nitride films by ion-beam reactive sputtering.
(Hungary)
A sputtering apparatus for preparation of nitride films by utilization of two ion beams in a vacuum of 1 x 10m5 to 5 x 10e5 torr is described. The 8 keV argon ion beam is used for sputtering of a silicon target. The silcon substrate is bombarded by a-1 keV nitrogen ion beam. Electrical characteristics of the Si,N, films oreoared with the aid of two ion beams do not differ from those df the Si,N, films prepared by high-frequency sputtering. It is shown that the chemical reaction takes place on surface of substrate. H Erler and Ch Weissmantel, Finommech Microtech, 13 (l), 1974, l-4 (in Hungarian). 30 1174. An emission method for determination of thickness of free thin films. (USSR) An emission method for determination of thickness of free thin films is presented. The method is based on measurement of assymetry of electron emission from opposite sides of free thin film at its bombardment by 100 keV energy ions. A S Dolgov, Phys Electronics, 1974, 91-92 (in Russian). 1175. Nucleation silicon. (USSR)
Rep Interdiscipl
Scient-Tech
Coil, No 7,
30 of gold films from vapour phase on single crystal
Using the transmission electron microscopy, density of gold nuclei crystallizing on silicon substrates in the temperature interval of 323 to 873 K is investigated. It is found that maximum density of gold islands occurs at 673 K. L I Gurskiy et al, Izv AN BSSR Ser Fiz Tekh Nauk, No 1, 1973, 38-42 (in Russian).
1176. Improvement bromide. (USSR)
of efficiency
of accumulation
30 films of caesium
Thin films of &esium bromide, possessing high secondary electron emission, can be potentially used as accumulation targets of highspeed memory electron-beam devices. The influence of imuurities on c&ductivity &d colouring ability and also of purity degree on the coefficient of secondary electron emission is investigated. Thin films of CsBr with thickness of 3000 8, have been prepared by evaporation on glass-ceramics substrates in a vacuum of 10m5 torr. I P Antoniv et al, Radiotekh Elektron, 19 (1 l), 1974, 2384-2388 (in 1177. Field-enhanced secondary electron emission from crvolite porous films. (USSR)
Field-enhanced secondary electron emission and secondary-electron conductivity of crvolite (AIF, . 3NaF) oorous films are investigated. It is found-porous cryoiite films possess the highest coefficient (52) of transmission field-enhanced secondary electron emission of all known emitters at primary electron energy of 3.6 keV. The cryolite films have been deposited on aluminium substrate with 200 to 300 8, thickness by evaporation in argon atmosphere at a pressure of 6 torr. N S Lozhkina and N L Yasnopolskiy, Radiotekh E/ektron, 19 (ll), 1974, 2438-2440 (in Russian). 30 1178. Strontium titanate films prepared by reactive cathodic sputtering.
(USSR) Strontium titanate films with thickness of 0.25 to 0.65 pm have been parepared by reactive sputtering with the deposition rate of 15 &min. The relative dielectric permittivity increased with deposition temperature and it reached 312 in films deposited at 465°C. A G Lipchinskiy, Mikroelektronika, 3 (2), 1974, 154-l 59 (in Russian). 1179. Dependence on growth temperature doped byionized antimony flow. (USSR)
of autoeuitaxial
30 silicon films
_ Regularities of the dooing nrocess in vacuum of 1 x lo- ’ to 5 x lo- 8 torr of autoepitaxial ii films by ionized antimony flow in the interval of temperature of epitaxy of 800 to 1200°C are investigated. Energy of antimony ions was varied in the interval of 0 to 8 keV. V A Tolomasov et al, Mikroelektronika, 3 (2), 1974, 175-177 (in Russian). 1180. Utilization of low-energy insulating films. (Germany)
electron beams
for analysis
30 of thin
An electron-beam method for examination of macro- and micrononuniformities down to the atomic scale of thin insulating films is considered. The electron beam is used as barrier-less electric contact and it is scanned over the examined sample. J Fisch et al, Wiss Zeitsch Techn Hochsch Ilmenau, 19 (l), 1973, 53-63 (in German). 30 1181. Measuring principle and preliminary results of investigation of thin insulating films with the aid of low-energy electron beam in high vacuum. (Germany).
Structures MIS with 500-1500 8, thin insulating films of SiO, and Si3N4 are investigated with the aid of electron beam with electron energy less than 400 eV. Time dependences of current-voltage characteristics are measured. H Gollnitz et al, Wiss Zeits Tech Hochs Ilmenau, 19 (I), 1973, 65-79 (in German). 1182.
Investigation
of silver
(USSR) Results of investigation ZnS and CeOz coatings have been prepared by substrates. L B Panfilova and Yu F 776-778
films
cleared
by dielectric
30 coatings.
of spectral transmission of silver films with are reported. Both silver and dielectric films conventional vacuum evaporation on glass Skachkov,
Optika
Spektroskop,
37 (4), 1974,
(in Russian).
31. EVACUATION
AND SEALING
31 1183. A caesium thermionic energy converter with auxiliary discharge. (USSR) Using laboratory models of caesium thermionic energy converter with
Classified abstracts
1184-l 197
directly heated cathode, it is shown that utilization of an auxiliary discharge in the case of uncompletely compensated regime results in considerable increase of basic current and shift of the current maximum to lower temperatures. The auxiliary discharge improves energy characteristics of the converter in the cases when the cathode temperature is lower than 1800°C. A I Kulagin and V N Tikhonov, Whys Phenom at Bombard of Solids by Atomic
Part,
Coil, Vol 2, FAN Tashkent
1974, 143-151
(in Russian).
31 1184. Methods for determination
of the influence of magnetic field on the thickness of anode layer in the Knudsen regime of thermionic energy converters. (USSR)
The influence of transversal magnetic field on current and thickness of anode layer of a caesium thermionic energy converter operated in overcompensated Knudsen regime is experimentally investigated. The thickness of anode layer varied in the interval of 95 to 100 pm at examined conditions. N M Tashbaev, Phys Phenom at Bombard of Solids by Atomic Part, Coil, Vol2,
FAN Tashkent
1974, 116-121 (in Russian).
31 1185. An analytical model of arc regime and its utilization for diagnostics of thermionic energy converters. (USSR)
The problems of determination of absolute values of cathode and anode work functions from experimental arc volt-ampere characteristics of thermionic energy converters are considered. It is shown that the results obtained with the aid of an anlytical model of arc regime agree with the experimental data obtained on thermionic energy converters with cesium pressure ranging from 0.7 to 10 torr obtained with the aid of other methods. V D Bondarenko and A I Loshkarev, Zh Tekh Fiz, 44 (12), 1974, 2529-2536 (in Russian). 31 1186. Investigation of interaction of alkaline earth metal oxides with cathode nickel alloys in conditions of exploitation of electro-vacuum devices. (USSR) Character of interaction in the interface region between alkaline earth
metal oxides and cathode core of nickel alloys with silicon, tungsten, rhenium, yttrium and lanthanum is investigated during prolonged operation of electro-vacuum devices with oxide cathode. E M Savitskiy et al, Influence ofPhys-them Ambient on Heat-resistance of Metal Materials, Coil, Nauka 1974, 104-109 (in Russian).
32. NUCLEONICS 1191. The influence of electrode geometry chambers to bet&on radiation. (USSR)
on sensitivity
32 of vacuum
The results of calculations of efficiency of vacuum chambers with various electrode geometry at operation in beams of transition betatron radiation are presented and compared with experimental data. The influence of the ratio of electrode radii, their absolute values, direction of electric field between electrodes, atomic number of electrode material is studied. V V Lazarev, Rep of Leningrad Electrotech Inst, No 140, 1974, 52-56 (in Russian). 1192. A vacuum chamber tion. (USSR)
for dosimetry
of transition
32 betatron radia-
Design of a vacuum chamber, used as a detector of betatron transition radiation. is described. The sensitivity of the chamber to radiation in the range’of limiting energy of 10 to 50 MeV is given. The dependence of volt-ampere characteristics of the vacuum chamber on emitter thickness is presented. A N Ivanov and V V Lazarev, Rep of Leningrad Electrotech Inst, No 140, 56-58 (in Russian). 1193. A generator of short electron beams with in-line source of hii; voltage. (USSR)
A generator of power 15 x 10m9 s pulses of beam of accelerated electrons with &rrent amplitude of 4 x lo3 A and voltage of 5 x lo5 V is described. The generator consists of a double forming line, spark switch and a vacuum diode with point cathode ol&%iz in the mode of explosive electron emission. The accelertaed electrons are passed through titanium foil with thickness of 5 x lo-’ m. A S Elchaninov et al, Power Nanosec Pulse Sources of Accel Electrons, Coil, Nauka Novosibirsk 1974, 119-123 (in Russian). 1194. A generator
of electron beams
with inductive
32 energy storage.
(USSR) Construction and results of experimental investigations of a generator of electron beam with inductive energy storage and switching are oresented. The electron beam current of 8 x lo3 A amplitude and &ration of lo-’ s was obtained at 3 x lo5 V cathode voltage of a vacuum diode with point cathode operated in the mode of explosive electron emission.
31 field of inductive
B M Kovalchuk and Yu A Kotov, Power Nanosec Pulse Sources of Accel Electrons, Coil, Nauka Novosibirsk 1974, 130-l 33 (in Russian).
A method for calculation of nonstationary temperature field of inductive thermionic cathode is presented. Calculated curves characterizing time variations of cathode temperature and also time changes in distribution of temperature over cathode cross section are given.
32 1195. Pulse nanosecond electron accelerator with high repetition freuuency. (USSR) A hire&i-a&ion pulse electron accelerator with high repetition
L D Pisarenko, Vestn Kiev Politekh 1974, 8-9 (in Russian).
frequency is described. Energy of accelerated electrons is 3 x lo5 eV, electron beam current 1.5 x lo3 A, duration of pulses 34 x 10d9 s and repetition frequency up to 150 Hz. The electron accelerator utilizes explosive electron emission from a point cathode in a vacuum diode. V V Khmyrov and V N Churilov, Power Nanosec Pulse Sources of Accel
1187. On calculation of nonstationary thermionic cathode. (USSR)
temperature
Inst, Ser Radioelektronika,
No
11, 31
1188. Measurement
of vacuum in sealed-off electron tubes. (USSR)
Many authors note that operation of the electron tube in the manometric mode changes the pressure in the tube. An improved method for measurement of pressure in sealed-off electron tubes is presented. I A Milyukbin, Rep of Ryazan Radiotechn Inst, No 35, 1973, 135-137 (in Russian). 31 1189. A method for recording pressure changes in sealed-off diodes.
(USSR) A method for recording pressure changes in sealed-off diodes is presented. The method is based on enhancement of anode current in the space-charge limited region due to action of ions of residual gas. V A Korotchenko et al, Rep of Ryazan Radiotech Znst, No 35, 1973, 131-134
(in Russian).
1190. Experimental investigation of He-Ne of rectangular cross section. (USSR)
laser with discharge
31 gap
Distribution of intensity of glow of discharge in cross section and dependence of amplification on the width of discharge gap are experimentally investigated in a He-Ne laser with discharge gap of rectangular cross section and filled with the mixture to a pressure of 0.7 torr. V E Privalov and V A Khodovoy, Optika Spektroskop, 37 (4), 1974, 797-799 (in Russian).
Electrons,
Colt, Nauka Novosibirsk
1974, 128-130 (in Russian).
32 1196. Experimental investigation of plasma focus in erosion plasma accelerators. II. Energy characteristics of dense plasma focus. (USSR)
Enthalpy, specific heat flow of compressed plasma, energy and light coefficients of efficiency. coefficient of utilization of workine substance and energy balance in the system are determined for fluoroplastic and copper plasma focus in erosion plasma accelerators. N P Kozlov et al, Zh Tekh Fiz, 44 (12), 1974, 2519-2522 (in Russian). 1197. The influence of high-frequency
plasma
generated
by an accelerator
gas ionization on parameters of with closed drift of electrons.
(USSR) The influence of additional near-anode gas ionization on parameters of ulasma flow generated by an accelerator with closed drift of electrons is investigated. The experiments were performed at admission of hydrogen into the accelerator chamber evacuated to 5 x 1Om6torr. It is shown that additional ionization results in enhancement of ion energy and decrease of divergence of plasma heam. I I Demidenko et al, Zh Tekh Fiz, 44 (12), 1974,2523-2528 (in Russian).