133. Electrical properties of p-n junctions in n-GaP

Classified abstracts 123-139 30 123. Commercial ellipsometer and investigation of the kinetics of oxide films on silicon. (USSR) The optical schema and arrangement of a commercial ellipsomcter enabling measurement of thickness of thin films down to 10 A. are described. A gas laser and mercury quartz lamp are used as light sources. The kinetics of thermal growth of a SiO2 layer on Si is investigated with the aid of this ellipsometer. A N Sedov et al, New Semiconductor Technol Coil, Voronezh Univ 1971, 120-125 (in Russian). 30 124. Investigation of some properties of MIS structures with aluminium oxide films. (USSR) Properties of aluminium oxide films prepared by high-frequency sputtering of aluminium are investigated. High stability of surface charge in the structures with two-layer dielectric SIO2-A1203 is demonstrated. Yu S Chistov et ai, New Semiconductor Technol, Coil, Voronezh Univ 1971, 161-169 (in Russian). 30 125. Investigation of four-layer epitaxlal high-voltage silicon p+-n-p-n + structures. (USSR) Epitaxial structures of the p÷-n-p-n+ type have been prepared by sublimation of Si in vacuum. Si discs doped by phosphorus were used as n-type bases. P-type bases were obtained by evaporation of Si doped by B and p+ and n ÷ emitters were obtained from Si doped by B and P, respectively. Volt-ampere characteristics of the structures have negative-resistance regions. Reverse voltage is 2000-2400 V, the switching voltage is 1200-1500 V. V A Tolomasov et al, Electron Technol, Sci-tech Coil, Semiconductor Devices, No 4, 1971, 66-67 (in Russian). 30 126. Spectral distribution of photoconductivity of single crystals and films of TIGaSe2. (USSR) The results of an investigation of the spectral distribution of the photoconductivity of single crystals and films of T1GaSe~ are presented. The films of TIGaSe2, with thickness 0.2 to 2 ttm, were prepared by deposition in vacuum at 10 -5 torr on glass substrates heated to 200°C. After deposition the films were heated to 300°C in vacuum and then cooled down to room temperature slowly. A A Chervova, Uch Zap Gorkov Univ Ser Fiz, No 126, 1971, 29-32 (in Russian). 30 127. Investigation of semiconductor converters transparent in infra-red region of solar spectrum. (USSR) Optical and thermo-physical properties of Si solar cells are investigated. The photo-converters with the depth of p-n junctions of 0.5 to 0.7 lain were prepared by the method of ion implantation. M M Koltun and A P Landsman, Zh Prikl Spektroskop, 15 (4), 1971, 753-755 (in Russian). 30 128. A method of improving the parameters of diffusion layers in gallium arsenide. (USSR) A diffusion method with the application of multicomponent diffusants in a quartz ampoule evacuated to 5 ~.~10 -'~ torr is used for preparation of diffusion layers on n-GaAs. Parameters of the diffusion layers are studied. V P Milonov et ai, Problems Solid State Phys, Coil, Voronezh Polytekh lnst, 1969, 244-248 (in Russian). 3O 129. Ultra-high frequency transistor prepared by ion implantation. (USSR) Preparation of ultra-high frequency transistors n-p-n ÷ with ion implantation is described. The transistors were obtained by implantation of B and P ions in epitaxial Si films at room temperature. V D Antropov et al, New Semiconductor Technol, Coil, Voronezh Univ 1971, 152-157 (in Russian). 3O 130. Concentration profiles from ion implantation and their utilization for fabrication of varieaps and bipolar transistors. (USSR) Concentration profiles from ion implantation in vacuum are considered. Calculated and experimental results on the depth of p-n junction at ion implantation by P and B are presented as a function of irradiation doses and annealing temperatures. P V Pavlov et al, Izv VUZ Radioelektronika, 14 (ll), 1971, 13531364 (in Russian). 72

30 131. Thermal annealing of inversion silicon layers doped by nitrogen and characteristics ofp-n junctions. (USSR) Resistivity and charge carrier concentration were measured in p-Si bombarded by 50 keV N ÷ ions and annealed at 900 to 1200°C. Preparation of radiation detectors with 1 per cent resolution by the method of ion implantation is described. V A Smirnova and A F Khokhlov, Uch Zap Gorkov Univ Ser Fiz, No 126, 1971, 26-29 (in Russian). 30 132. Preparation methods and properties of some thermoelectrical materials. (USSR) Preparation methods of thin films of some thermoelectric materials are reviewed. Properties of thin films are considered as a function of preparation techniques. A P Pikalev et al, Thermoelectric Materials, Coil, Moscow 1971, 96109 (in Russian). 30 133. Electrical properties ofp-n junctions in n-GaP. (USSRI Electrical properties of p-n junctions prepared by Zn diffusion in GaP epitaxial experimentally investigated. The GaP films have been obtained by the method of gas-transport reaction. O Gazakov et al, lzv A N Turkm S S R Ser Fiz Tekh Khim Geol Nauk, No 6, 1971, 3-8 (in Russian). 30 134. Influence of impurities on the growth of silicon cpitaxial films at redueod temperatures. (USSR) Low-temperature growth of epitaxial silicon films from mixtures of SiCI4-H~ and SiHC13-H2 is studied in presence of impurities. I M Skvortsov and B V Orion, Electron Technol, Sci Tech Coil, Semiconductor Devices, No 4, 1971, 99-106 (in Russian). 30 135. Investigation of some electrical and recombination properties of the system Si-SiO2. (USSR) Electrical and recombination properties of the system Si-SiOz are investigated during heat treatment in different gas ambients. Si-SiO2 systems were prepared by thermal and pyrolytic methods. V G Litovchenko et al, Ukr Fiz Zh, 16 (11), 1971, 1798-1804 (in Ukrainian.) 30 136. Influence of thickness on electrical strength of dielectric films. (USSR) Dependence of the electrical strength of dielectric films on their thickness is studied experimentally for La203 and Nd203 films prepared by electron-beam evaporation in vacuum. It is shown that the character of the investigated dependence is similar to that of SiO and SiOz films. D I Chernobrovkin and V V Bakhtinov, lzv VUZ Fiz, No 11. 1971, 148-149 (in Russian). 30 137. Basic characteristics and origin of transitional layers in gallium arsenide autoepitaxy. (USSR) Some general characteristics of the formation of transitional layers in autoepitaxy are considered. Experiments on GaAs epitaxy have been performed in an open iodide system. It is shown that the concentration of electrons at the film-substrate interface depends on the pressure of iodine at the system entrance. It is found that adsorption of the components of the gas phase plays the determining role in the formation of the transitional layer. L G Lawenteva et al, Izv VUZ Fiz, No 11° 1971, 82-87 (in Russian). 30 138. Magnetic compensation in iron-gadolinium and iron-terbium thin films. (USSR) Results of investigation of some physical properties and phase composition of iron-gadolinium and iron-terbium thin films with magnetic compensation are reported. The investigated films were prepared by thermal evaporation of starting material in vacuum at 10 -6 torr on glass substrates heated to 2000°C in an orientation field of 50 Oe. V A Buravikhiu et al, Izv VUZ Fiz, No 11, 1971, 88-92 (in Russian). 30 139. Domain structure and the remagnetization process in thin ferromagnetic films of elinvar composition. (USSR) Domain structure, coercive force and quasistatic remagnetization of thin films of the F e - N i - C r system with thickness of 400 to 10000 ~ ,