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1372. High mobility thin films of indium antimonide vacuum deposited on to a cold substrate
Classified
abstracts
1372-1389
1372. High mobility thin films of indium antimonide (USA) on to a cold substrate.
30 vacuum deposited
A method of vacuum deposition for preparing thin films of indium antimonide having high mobility is described. The method involves evaporating the compound onto a cold substrate and heating the deposit, and it is shown that electron mobilities of 1.3 mZ/V set can be achieved in films 1 p thick. W J Williamson,
Solid State
Electronics,
9, March
1966,
213-224. 30
1373. Vapour Deposition. C F Powell, et al, John Wiley, 1374. Device for spraying vacuum. (USSR)
1966,
725 pages,
ferromagnetic
$19.95.
films on a substrate
30 in a
The object of the invention is a device for spraying ferromagnetic films on sublayers in a vacuum. N I Spin’kov and V M Krasil’nikov, USSR Patent 165,629, Appl, 2Ist Ott
1963,
(in Russian),
1375. A study of the vaporization
of europium dicarbide.
30 (Great Britain)
A pure specimen of EuC, was synthesized from the elements and its vaporization behaviour studied by means of precise Knudsen effusion measurements. R H Flowers, (VKAEA, Harweil), 1965, IO pages. 30 1376. A study of thin 6lm vacuum deposited junctions.
(USA)
Progress is reported on the theoretical research on the role of surface states in the control of the conductivity of thin films and electron tunnelling in thin oxide films. Also, experimental research on field effect transistors, electron tunnelling devices, microwave bolometers and thin film magnetometers is discussed. R L Ramey, Virginia University, Charlottesville, Dee 1965, 34 pages, 1377. Fabrication methods detectors. (USA)
30 for lithium drifted surface barrier silicon
30 1378. The question of temperature control and temperature distribution in furnaces for heat treating purposes. Part 4. Control problems in a laboratory vacuum furnace. (Germany)
A series of problems common in temperature control and the achievement and control of defined temperature distributions in heat treating furnaces is discussed for a laboratory furnace, which is rebuilt from manual to automatic control. To facilitate the control of temperature and vacuum conditions, sensors are used to convert pressure into electrical signals. W Imehnann, et al, Harterei Tech Mitt, 20 (3), 1965, 187-192, (in German). vacuum
metallized
coatings
30 on strip
Vacuum deposition of a porous material onto the substrate with subsequent rolling of the coated material to close the coating pores results in a non-porous metal coating. The process is performed in a vacuum or a non-oxidizing atmosphere. Al has been coated on steel by this method. R M Brick, US Patent
3,197,861,
1380. On the process of formation strains and stresses. (France)
3 Aug 1965,
amorphous
boron tlbns.
30 of thin films and the resulting
30 silicon thin-tilm transistors.
(USA)
The properties of vacuum-deposited thin boron films are described. The layers, formed on fused silica substrates by electron bombardment, remain amorphous in structure up to approximately 900°C. C Feldman, et al, “Boron” Vol2, Edited by G. K. Gaul& Plenum Press, New
York, 1965.
1383. Preparation etching. (USSR)
of germanium
films by vacuum evaporation
30 with gas
To bring vacuum crystallisation conditions closer to equilibrium, and improve the quality of the support surface treatment, a method is proposed for the introduction of a stream of chemically active gas directed on the support at the same time as the stream of evaporated material. It has been established experimentally that the introduction of a stream of iodine into the germanium condensation process increases the back-flow of Ge atoms, reduces the degree of nonuniformity of the process, and also improves the structure of the resulting films. L N Butorina and V A Tolomasov, 547-549, (in Russian). 1384. Structure and thermal behaviour (Germany) face centred metal layers.
Kristaliograja,
IO (4),
1965,
30 of growth twins in thin cubical
Single crystal films prepared by evaporation of Ag, Au, Cu and Ni on heated cleaved rocksalt crystals and polycrystalline films of Ag, Au, Co, Pt, Al and Ni were studied by transmission electron microscopy and electron diffraction. H Schlotterer, German).
Z
Naturforsch,
2Oa,
(9),
1965,
I2OI-1207,
(in 30
1385. Composition
and structure of thin layers. Part I. (Czechoslovakia)
In this part of the article methods and instruments for examining thin layer contaminations are described. Activation analysis, mass(Czechoslovakia) spectrometry and x-ray analysis are compared. 1386. Investigation
of ultrahigh-vacuum
108-111,
(in Czech). 30 (USA) sputtered thin llbns.
Structural and electrical characteristics of germanium films, deposited on amorphous and single crystal substrates, were determined. Work on amorphous quartz substrate has been reported in J Vat Sci Tech, 2(97), 1965, and this report presents the results for insulating single crystal substrates. Preliminary investigation of similarly deposited silicon films revealed a greater mobility of deposited silicon atoms on silicon substrates compared to deposits on sapphire substrates. G Wallis, et al, US Govt Res Develop Repts, 41 (4), 25th Feb 1966, AD-626443, 1387. The evaporation.
47 pages. photoconduction (Japan)
of
Cd(S:Se)
deposited
by
30 vacuum
Thin films of solid solution Cd(S:Se) were prepared by vacuum evaporation. When the temperature of the glass or quartz plate used as a support was raised from 300°C to 600°C with increasing Cd proportion, films with nearly constant hexagonality of about 80 per cent were obtained. The experimental results on the photocurrent are compared with those obtained previously for Cd(S:Se) single crystals and some remarkable differences were found. S Asano and N Yamashita, Jap J Appl Phys, 4 (I I), Nov 1965. 839, (in French). 1388. Preparation
of Ge-GaAs
heterojunctions
30 by vacuum evaporation.
(Japan)
4pages.
Theoretical and mathematical treatment of strains and stresses in oxide films and metal films deposited by vacuum evaporation. N Cabrera, Mem Sci Rev Met, 62, 1965, 205-210, (in French). 1381. Evaporated
deposited
J Schilder, Jemn Mech Opt, 11 (4), Apr 1966,
The vacuum diffusion of lithium onto the surface of a silicon crystal wafer is described. The lithium metal is evaporated onto the unheated crystal inside a different furnace which is subsequently heated to a temperature of 370°C. H M Murray, et al, Western Reserve University, Cleveland, Ohio.
1379. Production of non-porous material. (USA)
30 1382. Vacuum
(USA)
Some preliminary results on thin-film transistors using evaporated silicon films on sapphire are described. The transistors are completely deposited by evaporation techniques, and the electrode arrangement is identical with the coplanar electrode structure described by Weimer. C A T Salama and L Young, IEEE Proc, 53, Dee 1965, 2 156-2157.
Heterojunctions have been made by depositing Ge epitaxially on GaAs substrate by vacuum evaporation. The crystalline structures are examined by electron diffraction. The electrical and photoelectric characteristics investigated were found to be consistent with those of junctions prepared by vapour growth. The appropriate characteristics of the heterojunction can be obtained at substrate temperatures around 800°C. I Ryn and K Takahashi, Jap J Appl Phys, 4 (II), Nov 1965, 8.50853, (in English). 30 1389. Vacuum-deposited
CdS thin flhns.
(USA)
Cadmium sulphide was vacuum-deposited onto glass substrates at 2.10+ torr using electron beam heating. Initial resistivities were in the range 0.1 to 1 ohm-cm. After heating in vacuum at 360 to 370°C 461
abstracts
1372-1389
1372. High mobility thin films of indium antimonide (USA) on to a cold substrate.
30 vacuum deposited
A method of vacuum deposition for preparing thin films of indium antimonide having high mobility is described. The method involves evaporating the compound onto a cold substrate and heating the deposit, and it is shown that electron mobilities of 1.3 mZ/V set can be achieved in films 1 p thick. W J Williamson,
Solid State
Electronics,
9, March
1966,
213-224. 30
1373. Vapour Deposition. C F Powell, et al, John Wiley, 1374. Device for spraying vacuum. (USSR)
1966,
725 pages,
ferromagnetic
$19.95.
films on a substrate
30 in a
The object of the invention is a device for spraying ferromagnetic films on sublayers in a vacuum. N I Spin’kov and V M Krasil’nikov, USSR Patent 165,629, Appl, 2Ist Ott
1963,
(in Russian),
1375. A study of the vaporization
of europium dicarbide.
30 (Great Britain)
A pure specimen of EuC, was synthesized from the elements and its vaporization behaviour studied by means of precise Knudsen effusion measurements. R H Flowers, (VKAEA, Harweil), 1965, IO pages. 30 1376. A study of thin 6lm vacuum deposited junctions.
(USA)
Progress is reported on the theoretical research on the role of surface states in the control of the conductivity of thin films and electron tunnelling in thin oxide films. Also, experimental research on field effect transistors, electron tunnelling devices, microwave bolometers and thin film magnetometers is discussed. R L Ramey, Virginia University, Charlottesville, Dee 1965, 34 pages, 1377. Fabrication methods detectors. (USA)
30 for lithium drifted surface barrier silicon
30 1378. The question of temperature control and temperature distribution in furnaces for heat treating purposes. Part 4. Control problems in a laboratory vacuum furnace. (Germany)
A series of problems common in temperature control and the achievement and control of defined temperature distributions in heat treating furnaces is discussed for a laboratory furnace, which is rebuilt from manual to automatic control. To facilitate the control of temperature and vacuum conditions, sensors are used to convert pressure into electrical signals. W Imehnann, et al, Harterei Tech Mitt, 20 (3), 1965, 187-192, (in German). vacuum
metallized
coatings
30 on strip
Vacuum deposition of a porous material onto the substrate with subsequent rolling of the coated material to close the coating pores results in a non-porous metal coating. The process is performed in a vacuum or a non-oxidizing atmosphere. Al has been coated on steel by this method. R M Brick, US Patent
3,197,861,
1380. On the process of formation strains and stresses. (France)
3 Aug 1965,
amorphous
boron tlbns.
30 of thin films and the resulting
30 silicon thin-tilm transistors.
(USA)
The properties of vacuum-deposited thin boron films are described. The layers, formed on fused silica substrates by electron bombardment, remain amorphous in structure up to approximately 900°C. C Feldman, et al, “Boron” Vol2, Edited by G. K. Gaul& Plenum Press, New
York, 1965.
1383. Preparation etching. (USSR)
of germanium
films by vacuum evaporation
30 with gas
To bring vacuum crystallisation conditions closer to equilibrium, and improve the quality of the support surface treatment, a method is proposed for the introduction of a stream of chemically active gas directed on the support at the same time as the stream of evaporated material. It has been established experimentally that the introduction of a stream of iodine into the germanium condensation process increases the back-flow of Ge atoms, reduces the degree of nonuniformity of the process, and also improves the structure of the resulting films. L N Butorina and V A Tolomasov, 547-549, (in Russian). 1384. Structure and thermal behaviour (Germany) face centred metal layers.
Kristaliograja,
IO (4),
1965,
30 of growth twins in thin cubical
Single crystal films prepared by evaporation of Ag, Au, Cu and Ni on heated cleaved rocksalt crystals and polycrystalline films of Ag, Au, Co, Pt, Al and Ni were studied by transmission electron microscopy and electron diffraction. H Schlotterer, German).
Z
Naturforsch,
2Oa,
(9),
1965,
I2OI-1207,
(in 30
1385. Composition
and structure of thin layers. Part I. (Czechoslovakia)
In this part of the article methods and instruments for examining thin layer contaminations are described. Activation analysis, mass(Czechoslovakia) spectrometry and x-ray analysis are compared. 1386. Investigation
of ultrahigh-vacuum
108-111,
(in Czech). 30 (USA) sputtered thin llbns.
Structural and electrical characteristics of germanium films, deposited on amorphous and single crystal substrates, were determined. Work on amorphous quartz substrate has been reported in J Vat Sci Tech, 2(97), 1965, and this report presents the results for insulating single crystal substrates. Preliminary investigation of similarly deposited silicon films revealed a greater mobility of deposited silicon atoms on silicon substrates compared to deposits on sapphire substrates. G Wallis, et al, US Govt Res Develop Repts, 41 (4), 25th Feb 1966, AD-626443, 1387. The evaporation.
47 pages. photoconduction (Japan)
of
Cd(S:Se)
deposited
by
30 vacuum
Thin films of solid solution Cd(S:Se) were prepared by vacuum evaporation. When the temperature of the glass or quartz plate used as a support was raised from 300°C to 600°C with increasing Cd proportion, films with nearly constant hexagonality of about 80 per cent were obtained. The experimental results on the photocurrent are compared with those obtained previously for Cd(S:Se) single crystals and some remarkable differences were found. S Asano and N Yamashita, Jap J Appl Phys, 4 (I I), Nov 1965. 839, (in French). 1388. Preparation
of Ge-GaAs
heterojunctions
30 by vacuum evaporation.
(Japan)
4pages.
Theoretical and mathematical treatment of strains and stresses in oxide films and metal films deposited by vacuum evaporation. N Cabrera, Mem Sci Rev Met, 62, 1965, 205-210, (in French). 1381. Evaporated
deposited
J Schilder, Jemn Mech Opt, 11 (4), Apr 1966,
The vacuum diffusion of lithium onto the surface of a silicon crystal wafer is described. The lithium metal is evaporated onto the unheated crystal inside a different furnace which is subsequently heated to a temperature of 370°C. H M Murray, et al, Western Reserve University, Cleveland, Ohio.
1379. Production of non-porous material. (USA)
30 1382. Vacuum
(USA)
Some preliminary results on thin-film transistors using evaporated silicon films on sapphire are described. The transistors are completely deposited by evaporation techniques, and the electrode arrangement is identical with the coplanar electrode structure described by Weimer. C A T Salama and L Young, IEEE Proc, 53, Dee 1965, 2 156-2157.
Heterojunctions have been made by depositing Ge epitaxially on GaAs substrate by vacuum evaporation. The crystalline structures are examined by electron diffraction. The electrical and photoelectric characteristics investigated were found to be consistent with those of junctions prepared by vapour growth. The appropriate characteristics of the heterojunction can be obtained at substrate temperatures around 800°C. I Ryn and K Takahashi, Jap J Appl Phys, 4 (II), Nov 1965, 8.50853, (in English). 30 1389. Vacuum-deposited
CdS thin flhns.
(USA)
Cadmium sulphide was vacuum-deposited onto glass substrates at 2.10+ torr using electron beam heating. Initial resistivities were in the range 0.1 to 1 ohm-cm. After heating in vacuum at 360 to 370°C 461