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1411. Fluctuations of electric current in gallium arsenide
Classified
abstracts
1408-1428 30
1408. Evaluation of the oxygen content in germanium obtained by spraying in vacua. (USSR)
and silicon films
Equations were derived for the calculation of the oxygen content in films of Ge and Si and compared with available data. V P Orlov, et al, Zh Fiz Khim, 39 (IO), 1965, 2573-2576, (in
vapours to form silicon carbide which may grow epitaxially. Growth of evaporated silicon layers commences in etch pits produced during the annealing pretreatment. Deposition continues until the etch become filled, when the layer becomes continuous by lateral spreading from the initial islands. B J D Thomas, Phys Status Solidi, 13 (2), Feb 1966,
Russian). 1409. Growth and electrical gallium phosphide. (USSR)
properties
of epitaxial
30 of p-type
layers
Epitaxial films of p-type gallium phosphide were grown on singlecrystal substrates of gallium arsenide by the vapour transport technique. Zh I Alferov, et al, Fiz Tverdogo Russian).
Tela, 7, (8), 1965,
2370-2374,
(in
1420. GaAs
Vapour-growth parameters films grown on n+-GaAs
359-372.
30 and impurity profiles on n-type by the hydrogen-vapour process.
(USA) Controlled growth of very smooth n-type films of GaAs on n +-GaAs substrates was achieved with the hydrogen-vapour transport process. These films are grown at 1000 and 1050” at growth rates from 0.08 to 1.5 p/min with partial pressures from 300 to 600 ml/min. K L Lawley, J Electrochem Sot, 113 (3), Mar 1966, 240-245.
30 1410. Deformation
and strength of thin films.
(USSR)
Mechanical properties as function of thickness of Al, Ag, Ge, Cu, Ni, Fe, vacuum deposited films of thickness 100-700 A have been investigated using electron diffraction. B Ya Pines and N S T-van. _ Fiz Metallov i Metallovedenie. ,,19. 1965. 899-90
7, (in Russian). 30
1411. Fluctuations
of electric current in gallium arsenide.
(USSR)
On deposition of Cu on n-GaAs with a low ohmic resistance and heating of the samples in vacua for 16 hrs, at 650-750”, n-GaAs with a high ohmic resistance was obtained with a resistivity of about 10” ohm-cm. V A Brodovii and S G Sokur, Ukr Fiz Zh, 10, (I I), 1965,1265-1267, (in Russian). 30 1412. Coating cold mirrors.
1421. Epitaxial GeI,. (Japan)
growth of germanium
by the hydrogen
reduction
Epitaxial vapour growth of Ge from GeI, with hydrogen and argon atmosphere was studied. Growth occurred only in hydrogen atmospheres. Vapour etching of substrate was observed at relatively large GeI, mole fraction in the case of hydrogen and in all cases in argon. Growth conditions were investigated with various growth parameters. S Iida, Japan J Appl Phys, 5 (2), Feb 1966, 138-144, (in English). 30 1422. Epitaxial
growth of iron on alkali halides.
(Great Britain)
Studies of the epitaxial growth of Fe on various alkali metal halides reveal that single-orientation (100) Fe films may be grown on KCI and KI. 0 S Heavens, et al, Acta Cryst, 20 (2), Feb 1966, 288-292.
(USA)
A suitable technique is designed and set up for the deposition of near-uniform thin-film coatings on steep-curvature blanks at high volumes. R Ball and T Putner, Vat Technology,
R/D Magazine,
Feb 1966,55-59. 30
1413. Agitated thin-film evaporators. (USA) A B Mutzenburg, et al, Chem Eng, 72, (19), 1965,
175-190.
30 of
1423. Materials and processes for passive thin-film components.
30 (USA)
Vacuum evaporation and sputtering processes of materials in use or under investigation for passive thin-film components in integrated circuits are reviewed. MO, Ag, Au, and the platinum metals have been considered to replace Al contacts and interconnections. However, silicide formation at low temperatures and lack of the required contact properties limit their usefulness.
30 1414. Gallium arsenide whisker crystals containing germanium core. (USA) S Iida and Y Sugita, Appl Phys Letters, 8 (4), 15th Feb 1966, 77-78. 30 1415. The preparation of large single crystals of cadmium sulphide. (Great Britain)
R Glang, J Vat Sci Tech, 3 (2), MarlApr
Single crystals of CdS, some 3 cm long and 1 cm in diam have been grown by a variety of vapour phase techniques. The methods of growth and the electrical properties of the resulting crystals are described in detail. It is shown that good results are obtained by vacuum sublimation from a stoichiometric charge.
The atomic suuttering - by_ fast neutrons incident upon a thin gold foil target was determined by measuring the activity bf radioactive gold atoms collected during continuous exposure of the target to a known fast neutron flux.
L Clark and J Woods, Brit J AppI Phys, 17 (3), Mar 1966, 1416. Structure and semiconducting properties of selenide on alkali halide single crystals. (Germany)
H Gobrecht,
et al, Z Physik,
187 (3),
1965,
37-48. 30
(USA) 1424. Sputtering of single-crystal copper. T W Snouse and L C Haughney, J Appl Phys, 37 (2), 700-704.
Feb 1966,
1425. Sputtering
(USA)
30 of polycrystalliue
gold by fast neutrons.
D W Noreross, et al, J Appl Phys, 37 (2), Feb 1966, 621-623.
319-325.
epitaxial
Epitaxial PbSe films were grown by vacuum evaporation crystalline substrates of NaCl, KC1 and KBr.
1966,
30 lead
on single
232-242,
(in German) 30 1417. Single crystal silicon epitaxy on foreign substrates. (USA)
Single crystal silicon has been grown epitaxially on a number of single crystal oxide substrates by chemical vapour deposition techniques. Such growth has been obtained in large area single crystal form on a-alumina, spine1 and beryllia. The distinct orientation relationship between the Si deposits and a multiplicity of crystallographic planes of the various insulating substrates are indicated. A Miller and H M Manasevit, J Vat Sci Tech, 3 (2), Mar/Apr 68- 78.
1966,
30 1426. Dielectric thin films through rf sputtering.
(USA)
Insulators cannot be sputtered with standard dc glow discharge techniques, because the accelerating potential cannot be directly applied and because the positive charge which accumulates on the surface during ion bombardment cannot be neutralized. Direct sputtering of insulators can be achieved by applying a high frequency potential to a metal electrode behind the dielectric target. This technique was used to deposit thin insulating films. P D Davidse and L I Maissel, JApplPhys, 1427. Thickness measurements a vacuum. (France)
37 (2), Feb 1966,574-579.
of tbln flbns obtained by evaporation
30 in
Thin-films have been developed scientifically and technically. Their application in the fields of optics, electronics and nucleonics continues to increase. J P Thomas and B Sandreau, Onde Elec, 44, 1965, 1308-1314, (in French).
30 of lead-
1418. Effect of the substrate on the structure and properties tellurium films. (USSR) L S Palatnik, et al, Fiz Tverd Tela, 7, 1965, 1699-1705, (in Russian). 30 1419. Growth and structure of evaporated silicon layers.
Silicon, on heating in vacua at lo+ torr, reacts with residual organic
30 1428. Pyrolytic materials.
(USA)
The properties of pyrolytic materials are described. These materials are made by vapour deposition on suitable substrates and basic concepts involved in this fabrication procedure are reviewed. W C Riley, “Modern Ceramics - Some Principles and Concepts” Edited by J E Hove and WC Riley, John Wiley, 1965, 235-260. 463
abstracts
1408-1428 30
1408. Evaluation of the oxygen content in germanium obtained by spraying in vacua. (USSR)
and silicon films
Equations were derived for the calculation of the oxygen content in films of Ge and Si and compared with available data. V P Orlov, et al, Zh Fiz Khim, 39 (IO), 1965, 2573-2576, (in
vapours to form silicon carbide which may grow epitaxially. Growth of evaporated silicon layers commences in etch pits produced during the annealing pretreatment. Deposition continues until the etch become filled, when the layer becomes continuous by lateral spreading from the initial islands. B J D Thomas, Phys Status Solidi, 13 (2), Feb 1966,
Russian). 1409. Growth and electrical gallium phosphide. (USSR)
properties
of epitaxial
30 of p-type
layers
Epitaxial films of p-type gallium phosphide were grown on singlecrystal substrates of gallium arsenide by the vapour transport technique. Zh I Alferov, et al, Fiz Tverdogo Russian).
Tela, 7, (8), 1965,
2370-2374,
(in
1420. GaAs
Vapour-growth parameters films grown on n+-GaAs
359-372.
30 and impurity profiles on n-type by the hydrogen-vapour process.
(USA) Controlled growth of very smooth n-type films of GaAs on n +-GaAs substrates was achieved with the hydrogen-vapour transport process. These films are grown at 1000 and 1050” at growth rates from 0.08 to 1.5 p/min with partial pressures from 300 to 600 ml/min. K L Lawley, J Electrochem Sot, 113 (3), Mar 1966, 240-245.
30 1410. Deformation
and strength of thin films.
(USSR)
Mechanical properties as function of thickness of Al, Ag, Ge, Cu, Ni, Fe, vacuum deposited films of thickness 100-700 A have been investigated using electron diffraction. B Ya Pines and N S T-van. _ Fiz Metallov i Metallovedenie. ,,19. 1965. 899-90
7, (in Russian). 30
1411. Fluctuations
of electric current in gallium arsenide.
(USSR)
On deposition of Cu on n-GaAs with a low ohmic resistance and heating of the samples in vacua for 16 hrs, at 650-750”, n-GaAs with a high ohmic resistance was obtained with a resistivity of about 10” ohm-cm. V A Brodovii and S G Sokur, Ukr Fiz Zh, 10, (I I), 1965,1265-1267, (in Russian). 30 1412. Coating cold mirrors.
1421. Epitaxial GeI,. (Japan)
growth of germanium
by the hydrogen
reduction
Epitaxial vapour growth of Ge from GeI, with hydrogen and argon atmosphere was studied. Growth occurred only in hydrogen atmospheres. Vapour etching of substrate was observed at relatively large GeI, mole fraction in the case of hydrogen and in all cases in argon. Growth conditions were investigated with various growth parameters. S Iida, Japan J Appl Phys, 5 (2), Feb 1966, 138-144, (in English). 30 1422. Epitaxial
growth of iron on alkali halides.
(Great Britain)
Studies of the epitaxial growth of Fe on various alkali metal halides reveal that single-orientation (100) Fe films may be grown on KCI and KI. 0 S Heavens, et al, Acta Cryst, 20 (2), Feb 1966, 288-292.
(USA)
A suitable technique is designed and set up for the deposition of near-uniform thin-film coatings on steep-curvature blanks at high volumes. R Ball and T Putner, Vat Technology,
R/D Magazine,
Feb 1966,55-59. 30
1413. Agitated thin-film evaporators. (USA) A B Mutzenburg, et al, Chem Eng, 72, (19), 1965,
175-190.
30 of
1423. Materials and processes for passive thin-film components.
30 (USA)
Vacuum evaporation and sputtering processes of materials in use or under investigation for passive thin-film components in integrated circuits are reviewed. MO, Ag, Au, and the platinum metals have been considered to replace Al contacts and interconnections. However, silicide formation at low temperatures and lack of the required contact properties limit their usefulness.
30 1414. Gallium arsenide whisker crystals containing germanium core. (USA) S Iida and Y Sugita, Appl Phys Letters, 8 (4), 15th Feb 1966, 77-78. 30 1415. The preparation of large single crystals of cadmium sulphide. (Great Britain)
R Glang, J Vat Sci Tech, 3 (2), MarlApr
Single crystals of CdS, some 3 cm long and 1 cm in diam have been grown by a variety of vapour phase techniques. The methods of growth and the electrical properties of the resulting crystals are described in detail. It is shown that good results are obtained by vacuum sublimation from a stoichiometric charge.
The atomic suuttering - by_ fast neutrons incident upon a thin gold foil target was determined by measuring the activity bf radioactive gold atoms collected during continuous exposure of the target to a known fast neutron flux.
L Clark and J Woods, Brit J AppI Phys, 17 (3), Mar 1966, 1416. Structure and semiconducting properties of selenide on alkali halide single crystals. (Germany)
H Gobrecht,
et al, Z Physik,
187 (3),
1965,
37-48. 30
(USA) 1424. Sputtering of single-crystal copper. T W Snouse and L C Haughney, J Appl Phys, 37 (2), 700-704.
Feb 1966,
1425. Sputtering
(USA)
30 of polycrystalliue
gold by fast neutrons.
D W Noreross, et al, J Appl Phys, 37 (2), Feb 1966, 621-623.
319-325.
epitaxial
Epitaxial PbSe films were grown by vacuum evaporation crystalline substrates of NaCl, KC1 and KBr.
1966,
30 lead
on single
232-242,
(in German) 30 1417. Single crystal silicon epitaxy on foreign substrates. (USA)
Single crystal silicon has been grown epitaxially on a number of single crystal oxide substrates by chemical vapour deposition techniques. Such growth has been obtained in large area single crystal form on a-alumina, spine1 and beryllia. The distinct orientation relationship between the Si deposits and a multiplicity of crystallographic planes of the various insulating substrates are indicated. A Miller and H M Manasevit, J Vat Sci Tech, 3 (2), Mar/Apr 68- 78.
1966,
30 1426. Dielectric thin films through rf sputtering.
(USA)
Insulators cannot be sputtered with standard dc glow discharge techniques, because the accelerating potential cannot be directly applied and because the positive charge which accumulates on the surface during ion bombardment cannot be neutralized. Direct sputtering of insulators can be achieved by applying a high frequency potential to a metal electrode behind the dielectric target. This technique was used to deposit thin insulating films. P D Davidse and L I Maissel, JApplPhys, 1427. Thickness measurements a vacuum. (France)
37 (2), Feb 1966,574-579.
of tbln flbns obtained by evaporation
30 in
Thin-films have been developed scientifically and technically. Their application in the fields of optics, electronics and nucleonics continues to increase. J P Thomas and B Sandreau, Onde Elec, 44, 1965, 1308-1314, (in French).
30 of lead-
1418. Effect of the substrate on the structure and properties tellurium films. (USSR) L S Palatnik, et al, Fiz Tverd Tela, 7, 1965, 1699-1705, (in Russian). 30 1419. Growth and structure of evaporated silicon layers.
Silicon, on heating in vacua at lo+ torr, reacts with residual organic
30 1428. Pyrolytic materials.
(USA)
The properties of pyrolytic materials are described. These materials are made by vapour deposition on suitable substrates and basic concepts involved in this fabrication procedure are reviewed. W C Riley, “Modern Ceramics - Some Principles and Concepts” Edited by J E Hove and WC Riley, John Wiley, 1965, 235-260. 463