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1435. Ion plating
Classified
abstracts
1429-1450
30 1429. Semiconducting copper sulpbide coatings. (USSR) Conducting copper sulphide coatings are deposited by evaporation with subsequent treatment of the deposit in sulphur vapours at 70-80°C. The method is applicable to the coating of plastic and polymer films. B P Kryshanovskii and A Ya Kuznetsov, Pribory Tekh Eksper, 2, 1965,
167-169,
(in Russian).
1430. The formation Britain)
of imperfections
in epitaxial
30 (Great
gold films.
Single-crystal films of gold were prepared by evaporation onto MoS, inside an electron microscope. This technique allowed direct and continuous observation, mainly by means of moire patterns, of the formation of lattice imperfections during film growth. M H Jacobs. et al. Phil Map.-_ 13 (121). . ,_ 1966. 129-156. 1431. Heater apparatus (USA)
for vapour deposition of semiconductor
E C Schaarschmidt, 1965, Appl21
US Patent 3,220,380 Aug 1961, 3 pages.
1432. Vacuum
coater for mass production.
(Cl
II&-48),
30 : 28 bodies.
30 Nov 30
(Great
Britain)
A large vacuum coating plant is briefly described. Anon, Ind Finishing (London),
17 (201),
1965,
31. 30
1433. Metalliiing
small parts.
(USA)
Vacuum metallizing of small parts of various types at Premier Vacuum Process Corp, Maspeth, New York is described. P A Cohen, Metal Finishing, 63 (3), 1965, 44-49. 30 1434. Ion sputtered coatings provide tailored properties.
(USA)
The low energy ion sputtering process for deposition of W, Nb, Pb, stainless steel, glass and Al,O, films on various base materials is described. Uses of the method in continuous apparatus and applications are surveyed. J M Seeman, Materials Des Eng, 62 (S), 1965, 102-104, 198. 30 1435. Ion plating.
The ion plating process developed by the US Atomic Energy Commission, Sandia Laboratory, Albuquerque, New Mexico, is described. In this process metal is evaporated thermally connected to the anode of a high voltage circuit and is deposited on the cathode in an inert gas atmosphere e.g. argon. The process can be used to deposit unusual coating combinations. Anon, Products Finishing, 29 (5), 1965, 56-60. 30 1436. Vacuum metalIizing of plastic substances.
(Italy)
Al, Ag, Zn, Cu, and Au are vacuum deposited on plastic substances to produce films for protective or decorative purposes. Mechanical, physical and electrical properties of the films are discussed. G Pedrotti and G Presti, Riv Mecc, 15, 1965, 51-62, (in Italian). 30 1437. Deposition
rate control.
(Great Britain)
Means of measuring and controlling evaporation rate in vacuum coating are described. D Fulron et al, British Patent 1,010,456, I7 Nov 1965. 30 1438. Vapour deposition on insulating substrate. (Great S G Ayling, British Patent 1,010,111, 17th Nov 1965.
Britain)
E Plockinger and H Straube, “The Fabrication Melting, Casting and Testing.” York, 1965, 648-656. 1442. Resistivity
Springer
of Specialty Steels and Verlag, Vienna and New
and structure of sputtered molybdenum films.
Films of MO have been prepared by sputtering onto oxidized silicon substrates. The resistivity lattice parameter, orientation, and grain size were studied as a function of substrate temperature and substrate bias. Under normal sputtering conditions, the resistivity of the films was found to be quite high (600 x 1Om6ohm-cm). F M d’Henrle, Trans Met Sot AIME, 236 (3), Mar 1966, 321-326. 30 1443. Corrosion protective films by vacuum metalliiing. B J Williams, Product Finishing, 18 (7), 1965, 52-58. 1444. Deposition (USA)
parameter
effects
on vapour-deposited
tile.
An oxide-ceramic tile, consisting mainly of CaO, for vacuum evaporation with induction heating has good thermal shock resistance and low partial oxygen pressure at 1500°C. J Eckardt and F Pawlek, DAS 1,207,179, Appl16 Dee 1965.
1966,
326-330.
1445. Study of the stages leading to the mucleation (France)
30 of copper sulphide.
When copper is exposed to sulphur vapour at low pressure (45 x 10m6 torr) and low temperature (100°C) the gas-metal reaction occurs slowly; under these conditions, chemical adsorption of S persists during sulphuration of Cu, S being present simultaneously in both the chemisorbed and combined states. L Plessy, et al, Mem Sci Rev Met, 62, 1965, 171-l 78, (in French). 30 1446. Vapour deposition of cobalt-tungsten alloys. (USA) J G Donaldson, US Bureau of Mines, Rept, Invest No 6713, I5 pages. 1447. Photographic material prepared layers of silver halide. (Japan)
by vacuum
deposition
1965, 30 of thin
The crystal form and photographic sensitivity of AgBr layers prepared by vacuum deposition were studied. The temperature of the vapour source was measured with a thermocouple and the pressure was kept constant at 1 x 10m4torr during evaporation. Photographic sensitivity increased to a maximum and then decreased as the thickness increased. For constant layer thickness (800 A) sensitivity increased with increasing vapour temperature (300-610”) and crystal orientation varied irregularly. A Hirata 119-123,
and Y Tsunoda, (in Japanese).
Nippon Shashin Gakkai
Kaishi,
28, 1965,
30 1448. Structure and electrical properties of thin films of p-type GaSb. (USSR)
The conditions for polycrystalline films vacuum evaporation S A Aitkhozbin and
the formation and the electric properties of of GaSb obtained by the method of discrete are described. S A Semilatov, Kristallografa, 10, 1965, 492-
1449. The layout (Great Britain)
of microcircuits,
30
and Hall, 1965.
30
1450. Crystallization vacuum evaporation.
Vacuum induction furnaces are based on the principle of the coreless induction furnace and are frequently used in the production of specialty steels. A review is given of typical furnace designs ranging in melt size from 250-2300 kg. Melting under inert gas is also possible in some units.
masking
30 and etching techniques.
Methods for producing microcircuits, from vacuum deposited thin film elements are discussed. D I Gaffe, Thin film microelectronics, Edited by L Holland, Chapman
(Italy)
1441. The vacuum induction furnace.
464
30 zinc films.
496, (in Russian).
(Germany)
1440. Painting of vacuum metallized objects. Anon, Verniciatura, 5 (2), 1965, S14-SI6.
(USA)
In this investigation, polyethylene terephthalate (Mylar) was coated with various thicknesses of a vapour-deposited silver precoat followed by a vapour-deposited zinc using several order of magnitude variation in deposition rate of both the silver and zinc. The silver and zinc deposition rates were found to have a minor effect on the characteristics of the Zn film. R M Lumley and J D Wood, Trans Met Sot AIME, 236 (3), Mar
30 1439. Vacuum evaporation
30 (USA)
of amorphous (Japan)
30 titanium dioxide Eons prepared by
An electron microscopy and electron diffraction study was made on the structure of vacuum-deposited films of TiOZ. The films were amorphous when they were deposited on rocksalt at room temperature. When irradiated by an intense electron beam, the amorphous films crystallized in anatase and rutile forms. M Shiojiri, J Phys Sot Japan, 21, Feb 1966, 335-345.
abstracts
1429-1450
30 1429. Semiconducting copper sulpbide coatings. (USSR) Conducting copper sulphide coatings are deposited by evaporation with subsequent treatment of the deposit in sulphur vapours at 70-80°C. The method is applicable to the coating of plastic and polymer films. B P Kryshanovskii and A Ya Kuznetsov, Pribory Tekh Eksper, 2, 1965,
167-169,
(in Russian).
1430. The formation Britain)
of imperfections
in epitaxial
30 (Great
gold films.
Single-crystal films of gold were prepared by evaporation onto MoS, inside an electron microscope. This technique allowed direct and continuous observation, mainly by means of moire patterns, of the formation of lattice imperfections during film growth. M H Jacobs. et al. Phil Map.-_ 13 (121). . ,_ 1966. 129-156. 1431. Heater apparatus (USA)
for vapour deposition of semiconductor
E C Schaarschmidt, 1965, Appl21
US Patent 3,220,380 Aug 1961, 3 pages.
1432. Vacuum
coater for mass production.
(Cl
II&-48),
30 : 28 bodies.
30 Nov 30
(Great
Britain)
A large vacuum coating plant is briefly described. Anon, Ind Finishing (London),
17 (201),
1965,
31. 30
1433. Metalliiing
small parts.
(USA)
Vacuum metallizing of small parts of various types at Premier Vacuum Process Corp, Maspeth, New York is described. P A Cohen, Metal Finishing, 63 (3), 1965, 44-49. 30 1434. Ion sputtered coatings provide tailored properties.
(USA)
The low energy ion sputtering process for deposition of W, Nb, Pb, stainless steel, glass and Al,O, films on various base materials is described. Uses of the method in continuous apparatus and applications are surveyed. J M Seeman, Materials Des Eng, 62 (S), 1965, 102-104, 198. 30 1435. Ion plating.
The ion plating process developed by the US Atomic Energy Commission, Sandia Laboratory, Albuquerque, New Mexico, is described. In this process metal is evaporated thermally connected to the anode of a high voltage circuit and is deposited on the cathode in an inert gas atmosphere e.g. argon. The process can be used to deposit unusual coating combinations. Anon, Products Finishing, 29 (5), 1965, 56-60. 30 1436. Vacuum metalIizing of plastic substances.
(Italy)
Al, Ag, Zn, Cu, and Au are vacuum deposited on plastic substances to produce films for protective or decorative purposes. Mechanical, physical and electrical properties of the films are discussed. G Pedrotti and G Presti, Riv Mecc, 15, 1965, 51-62, (in Italian). 30 1437. Deposition
rate control.
(Great Britain)
Means of measuring and controlling evaporation rate in vacuum coating are described. D Fulron et al, British Patent 1,010,456, I7 Nov 1965. 30 1438. Vapour deposition on insulating substrate. (Great S G Ayling, British Patent 1,010,111, 17th Nov 1965.
Britain)
E Plockinger and H Straube, “The Fabrication Melting, Casting and Testing.” York, 1965, 648-656. 1442. Resistivity
Springer
of Specialty Steels and Verlag, Vienna and New
and structure of sputtered molybdenum films.
Films of MO have been prepared by sputtering onto oxidized silicon substrates. The resistivity lattice parameter, orientation, and grain size were studied as a function of substrate temperature and substrate bias. Under normal sputtering conditions, the resistivity of the films was found to be quite high (600 x 1Om6ohm-cm). F M d’Henrle, Trans Met Sot AIME, 236 (3), Mar 1966, 321-326. 30 1443. Corrosion protective films by vacuum metalliiing. B J Williams, Product Finishing, 18 (7), 1965, 52-58. 1444. Deposition (USA)
parameter
effects
on vapour-deposited
tile.
An oxide-ceramic tile, consisting mainly of CaO, for vacuum evaporation with induction heating has good thermal shock resistance and low partial oxygen pressure at 1500°C. J Eckardt and F Pawlek, DAS 1,207,179, Appl16 Dee 1965.
1966,
326-330.
1445. Study of the stages leading to the mucleation (France)
30 of copper sulphide.
When copper is exposed to sulphur vapour at low pressure (45 x 10m6 torr) and low temperature (100°C) the gas-metal reaction occurs slowly; under these conditions, chemical adsorption of S persists during sulphuration of Cu, S being present simultaneously in both the chemisorbed and combined states. L Plessy, et al, Mem Sci Rev Met, 62, 1965, 171-l 78, (in French). 30 1446. Vapour deposition of cobalt-tungsten alloys. (USA) J G Donaldson, US Bureau of Mines, Rept, Invest No 6713, I5 pages. 1447. Photographic material prepared layers of silver halide. (Japan)
by vacuum
deposition
1965, 30 of thin
The crystal form and photographic sensitivity of AgBr layers prepared by vacuum deposition were studied. The temperature of the vapour source was measured with a thermocouple and the pressure was kept constant at 1 x 10m4torr during evaporation. Photographic sensitivity increased to a maximum and then decreased as the thickness increased. For constant layer thickness (800 A) sensitivity increased with increasing vapour temperature (300-610”) and crystal orientation varied irregularly. A Hirata 119-123,
and Y Tsunoda, (in Japanese).
Nippon Shashin Gakkai
Kaishi,
28, 1965,
30 1448. Structure and electrical properties of thin films of p-type GaSb. (USSR)
The conditions for polycrystalline films vacuum evaporation S A Aitkhozbin and
the formation and the electric properties of of GaSb obtained by the method of discrete are described. S A Semilatov, Kristallografa, 10, 1965, 492-
1449. The layout (Great Britain)
of microcircuits,
30
and Hall, 1965.
30
1450. Crystallization vacuum evaporation.
Vacuum induction furnaces are based on the principle of the coreless induction furnace and are frequently used in the production of specialty steels. A review is given of typical furnace designs ranging in melt size from 250-2300 kg. Melting under inert gas is also possible in some units.
masking
30 and etching techniques.
Methods for producing microcircuits, from vacuum deposited thin film elements are discussed. D I Gaffe, Thin film microelectronics, Edited by L Holland, Chapman
(Italy)
1441. The vacuum induction furnace.
464
30 zinc films.
496, (in Russian).
(Germany)
1440. Painting of vacuum metallized objects. Anon, Verniciatura, 5 (2), 1965, S14-SI6.
(USA)
In this investigation, polyethylene terephthalate (Mylar) was coated with various thicknesses of a vapour-deposited silver precoat followed by a vapour-deposited zinc using several order of magnitude variation in deposition rate of both the silver and zinc. The silver and zinc deposition rates were found to have a minor effect on the characteristics of the Zn film. R M Lumley and J D Wood, Trans Met Sot AIME, 236 (3), Mar
30 1439. Vacuum evaporation
30 (USA)
of amorphous (Japan)
30 titanium dioxide Eons prepared by
An electron microscopy and electron diffraction study was made on the structure of vacuum-deposited films of TiOZ. The films were amorphous when they were deposited on rocksalt at room temperature. When irradiated by an intense electron beam, the amorphous films crystallized in anatase and rutile forms. M Shiojiri, J Phys Sot Japan, 21, Feb 1966, 335-345.