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1459. Discharge modes in a hot-cathode discharge tube filled with argon at 500 torr
Classified
abstracts
1451-1468
30 1451. Epitaxial growth of metals on rocksalt faces cleaved in vacuum
Part II. (Japan) The orientation and structure of gold particles formed by evaporation on rocksalt cleaved in ultrahigh-vacuum were studied at various stages of the nucleation and growth process. S Ino, J Phys Sot Japan, 21, Feb 1966, 346-362. 30 1452. Further note on crystallite in obliquely evaporated lilm of CdS.
(Jwa4
The features observed in the films evaporated on Pyrex glass plate at incident angles of about 32” and 42”, the limit of the effects of both incident angle and substrate temperature, and the influence of the species of CdS source are described in this note. H Okamoto, Jap J Appl Phys, 5, Mar 1966, 251. 30 1453. Post-deposition treatments of CdS thin films. (Germany) Study of the effects of vacuum heat treatments of CdS films at various temperatures on the photocurrent and on the photocurrent to dark current ratio. CdS films were evaporated at 10-5-10-8 torr, cleaned and then placed in a second vacuum systemat 10e5 torr into which Oe was admitted to give pressures between 2 x lo+ and 5 torr; then the films are heated to temperatures between 100-4OO”C. A S Esbitt, Phys Status Solidi, 12 (I), 1965, K3S-K37. 30 1454. Optical properties and structure of thin films of lithium fluoride. (France) The following parameters were studied: temperature of the target during the deposition, pressure in the vessel, and rate of deposition. It is shown that the target temperature during formation has an important influence on the deposit structure. The optical data allow the authors to propose a structure for the deposit. N Barbaroux, et al, Le Vide, 121, Jan-Feb, 1966, 75-79, (in French). 30 1455. The preparation and properties of sputtered aluminium thin films. (USA) Sputtered Al thin films were prepared in each of two conventional bell-jar vacuum systems. One system utilized an inner “getter sputtering” enclosure, the second system was a standard diode sputtering arrangement. Consistent and repeatable film properties were obtained in both systems provided sufficient cleanup and presputtering time was allowed. The various problems associated with Al sputtering are discussed, with particular attention to the minimization of film contamination by outgassing and oxidation. H C Cook, et al, Trans Met Sot AIME, 236, (3), 1966, 314-320. 30 1456. Growth of single-crystal silicon on beryllium oxide. (USA) Single-crystal silicon films have been obtained on several natural crystal faces of Be0 using the thermal decomposition of silane and the hydrogen reduction of silicon tetrachloride. H M Manasevit et al, Trans Met Sot AIME, 236 (3), Mar 1966, 275-280. 30 1457. Properties and structure of thin silicon 6lms sputtered on fused quartz substrates. H Y Kamagai, Trans Met Sot AIME, 236 (3), 1966, 295-299. 31. Evacuation
and
sealing 31
1458. Demountable tantalum cathode electron gun.
(USSR) The design of an electron gun with a tantalum cathode heater by electron bombardment is described. The specific feature of this design is the possibility of replacing the cathodes without disturbing the electrode setting. V A Vishnyakov, Pribory Tekh Eksper, 2,1965, 145-146, (in Russian). 31 1459. Discharge modes in a hot-cathode discharge tube lilled with argon at 500 torr. (Great Britain) T Z Szel&yi, Brit J Appl Phys, I7 (jr), Mar 1966, 357-370. 31 1460. Vacuum UV radiation from plasmas formed by a laser on metal surfaces. (USA) A coherent light pulse from a Q-switched laser produces a hot dense plasma. The experimental investigation reported here was directed toward determining the temperature of this plasma by measuring the wavelength at the peak intensity of the emitted continuum radiation.
A W Ehler and G L Weissler, Appl Phys Letters, 8 (4), 15 Feb 1966, 89-91. 31 : 31 1461. Some intensity measurements in the vacuum ultra-violet. (Hawaii) Photoelectric yields of 23 untreated metals, including gold and four semiconductors were measured in the region 900-2000 A by means of a calibrated thermocouple. The yield curves showed no structure and in general conlirmed previous results for several metals. K Watanabe et al, Hawaii University, Honolulu, 65 pages. 31 1462. Investigating the load conditions of fluorescent lamp cathodes. (Hungary) The conditions of the glow discharge at the electrodes of fluorescent lamps and the energy balance of the glow discharge period were investigated. The experiments were performed on 40 W and 100 W lamps filled with argon, neon or a mixture of these gases. The voltage and current of the electrode coils were measured and the lowest voltage at which a glow discharge appears at the cathode coil was determined. The radiant energy and temperature of the cathode were also measured. It was established that the use of neon as filling gas may be practical for fluorescent lamps with heavy specific power load because of the heat conductivity of neon which is higher than AR that of argon. Gy Lakatos and J Bite, Elektrotechnika, 58 (5), 1965, 176-l 79, (in Hungarian). 31 1463. Vacuum sealing techniques for photomultiplier tubes. (USA) Some vacuum sealing techniques for photomultiplier tubes are briefly discussed. The Garlock Klozure greatly simplifies the vacuum sealing of photomultiplier tubes. J C Nyman, Rev Sci Instrum, 36, 1965, 1887-1888. 31 1464. Use of titanium in the electron tube technology. (France) The use of titanium as a material for electron tubes has been considerably extended in the last few years, owing to various interesting properties such as its efficiency as a getter and the ease of making vacuum-tight brazed joints between titanium and ceramics. At the same time, experience with the application of titanium to more varied cases has shown that peculiar kinds of trouble are liable to occur. The most common of these is a very strong sputtering observed during heating in vacuum at temperatures as low as 200400°C resulting in the deposition over the ceramic of a metal film that destroys the insulation. This paper is a summary of two years experience in the use of titanium in various types of electron tubes. C Biguenet, Le Vide, 120, Nov-Dee 1965, 426-436, (in French). 31 1465. Vacuum transfer encapsulation. Rapid evacuation of air from transfer mould cavities can aid in the production of high-quality void-free parts. A W Hunt, Modern Plastics, 43 (7), 1966, 128-130. 31 1466. Improving the reliability of transistors by automation of the vacuum-drying and hermetisation processes. The reliability of transistors and the stability of their electrical parameters may be improved by vacuum drying followed by hermetisation involving cold welding in an atmosphere of dry, dust-free air; this also avoids the need for lacquer coatings. Whereas these operations can be carried out by hand, using quite simple equipment, efficiency is increased by using a newly-developed semi-automatic plant for vacuum-drying and sealing germanium and silicon transistors. The new plant allows temperature, pressure, and drying time to be varied at will, and is capable of treating 700 transistors per hour; labour economy is improved by a factor of two and the net cost of the transistors is substantially reduced. Yu D Pervitskii, Zzv Leningradsk Elektrotekhn Inst, 56, 1966, I II, (in Russian). 31 1467. Electronic tubes as thermlonlc converters. (Germany) Observations of the thermionic emission in vacuum tubes showed very low direct conversion efficiency of the thermic energy into electricity. J Mantel, Inst fur Plastnaphysik, Garching, West Germany, 1965, (in German). 31 1468. Electronics in mass spectrometry. (USA) A review of the fundamental behaviour of the electronic circuis 465
abstracts
1451-1468
30 1451. Epitaxial growth of metals on rocksalt faces cleaved in vacuum
Part II. (Japan) The orientation and structure of gold particles formed by evaporation on rocksalt cleaved in ultrahigh-vacuum were studied at various stages of the nucleation and growth process. S Ino, J Phys Sot Japan, 21, Feb 1966, 346-362. 30 1452. Further note on crystallite in obliquely evaporated lilm of CdS.
(Jwa4
The features observed in the films evaporated on Pyrex glass plate at incident angles of about 32” and 42”, the limit of the effects of both incident angle and substrate temperature, and the influence of the species of CdS source are described in this note. H Okamoto, Jap J Appl Phys, 5, Mar 1966, 251. 30 1453. Post-deposition treatments of CdS thin films. (Germany) Study of the effects of vacuum heat treatments of CdS films at various temperatures on the photocurrent and on the photocurrent to dark current ratio. CdS films were evaporated at 10-5-10-8 torr, cleaned and then placed in a second vacuum systemat 10e5 torr into which Oe was admitted to give pressures between 2 x lo+ and 5 torr; then the films are heated to temperatures between 100-4OO”C. A S Esbitt, Phys Status Solidi, 12 (I), 1965, K3S-K37. 30 1454. Optical properties and structure of thin films of lithium fluoride. (France) The following parameters were studied: temperature of the target during the deposition, pressure in the vessel, and rate of deposition. It is shown that the target temperature during formation has an important influence on the deposit structure. The optical data allow the authors to propose a structure for the deposit. N Barbaroux, et al, Le Vide, 121, Jan-Feb, 1966, 75-79, (in French). 30 1455. The preparation and properties of sputtered aluminium thin films. (USA) Sputtered Al thin films were prepared in each of two conventional bell-jar vacuum systems. One system utilized an inner “getter sputtering” enclosure, the second system was a standard diode sputtering arrangement. Consistent and repeatable film properties were obtained in both systems provided sufficient cleanup and presputtering time was allowed. The various problems associated with Al sputtering are discussed, with particular attention to the minimization of film contamination by outgassing and oxidation. H C Cook, et al, Trans Met Sot AIME, 236, (3), 1966, 314-320. 30 1456. Growth of single-crystal silicon on beryllium oxide. (USA) Single-crystal silicon films have been obtained on several natural crystal faces of Be0 using the thermal decomposition of silane and the hydrogen reduction of silicon tetrachloride. H M Manasevit et al, Trans Met Sot AIME, 236 (3), Mar 1966, 275-280. 30 1457. Properties and structure of thin silicon 6lms sputtered on fused quartz substrates. H Y Kamagai, Trans Met Sot AIME, 236 (3), 1966, 295-299. 31. Evacuation
and
sealing 31
1458. Demountable tantalum cathode electron gun.
(USSR) The design of an electron gun with a tantalum cathode heater by electron bombardment is described. The specific feature of this design is the possibility of replacing the cathodes without disturbing the electrode setting. V A Vishnyakov, Pribory Tekh Eksper, 2,1965, 145-146, (in Russian). 31 1459. Discharge modes in a hot-cathode discharge tube lilled with argon at 500 torr. (Great Britain) T Z Szel&yi, Brit J Appl Phys, I7 (jr), Mar 1966, 357-370. 31 1460. Vacuum UV radiation from plasmas formed by a laser on metal surfaces. (USA) A coherent light pulse from a Q-switched laser produces a hot dense plasma. The experimental investigation reported here was directed toward determining the temperature of this plasma by measuring the wavelength at the peak intensity of the emitted continuum radiation.
A W Ehler and G L Weissler, Appl Phys Letters, 8 (4), 15 Feb 1966, 89-91. 31 : 31 1461. Some intensity measurements in the vacuum ultra-violet. (Hawaii) Photoelectric yields of 23 untreated metals, including gold and four semiconductors were measured in the region 900-2000 A by means of a calibrated thermocouple. The yield curves showed no structure and in general conlirmed previous results for several metals. K Watanabe et al, Hawaii University, Honolulu, 65 pages. 31 1462. Investigating the load conditions of fluorescent lamp cathodes. (Hungary) The conditions of the glow discharge at the electrodes of fluorescent lamps and the energy balance of the glow discharge period were investigated. The experiments were performed on 40 W and 100 W lamps filled with argon, neon or a mixture of these gases. The voltage and current of the electrode coils were measured and the lowest voltage at which a glow discharge appears at the cathode coil was determined. The radiant energy and temperature of the cathode were also measured. It was established that the use of neon as filling gas may be practical for fluorescent lamps with heavy specific power load because of the heat conductivity of neon which is higher than AR that of argon. Gy Lakatos and J Bite, Elektrotechnika, 58 (5), 1965, 176-l 79, (in Hungarian). 31 1463. Vacuum sealing techniques for photomultiplier tubes. (USA) Some vacuum sealing techniques for photomultiplier tubes are briefly discussed. The Garlock Klozure greatly simplifies the vacuum sealing of photomultiplier tubes. J C Nyman, Rev Sci Instrum, 36, 1965, 1887-1888. 31 1464. Use of titanium in the electron tube technology. (France) The use of titanium as a material for electron tubes has been considerably extended in the last few years, owing to various interesting properties such as its efficiency as a getter and the ease of making vacuum-tight brazed joints between titanium and ceramics. At the same time, experience with the application of titanium to more varied cases has shown that peculiar kinds of trouble are liable to occur. The most common of these is a very strong sputtering observed during heating in vacuum at temperatures as low as 200400°C resulting in the deposition over the ceramic of a metal film that destroys the insulation. This paper is a summary of two years experience in the use of titanium in various types of electron tubes. C Biguenet, Le Vide, 120, Nov-Dee 1965, 426-436, (in French). 31 1465. Vacuum transfer encapsulation. Rapid evacuation of air from transfer mould cavities can aid in the production of high-quality void-free parts. A W Hunt, Modern Plastics, 43 (7), 1966, 128-130. 31 1466. Improving the reliability of transistors by automation of the vacuum-drying and hermetisation processes. The reliability of transistors and the stability of their electrical parameters may be improved by vacuum drying followed by hermetisation involving cold welding in an atmosphere of dry, dust-free air; this also avoids the need for lacquer coatings. Whereas these operations can be carried out by hand, using quite simple equipment, efficiency is increased by using a newly-developed semi-automatic plant for vacuum-drying and sealing germanium and silicon transistors. The new plant allows temperature, pressure, and drying time to be varied at will, and is capable of treating 700 transistors per hour; labour economy is improved by a factor of two and the net cost of the transistors is substantially reduced. Yu D Pervitskii, Zzv Leningradsk Elektrotekhn Inst, 56, 1966, I II, (in Russian). 31 1467. Electronic tubes as thermlonlc converters. (Germany) Observations of the thermionic emission in vacuum tubes showed very low direct conversion efficiency of the thermic energy into electricity. J Mantel, Inst fur Plastnaphysik, Garching, West Germany, 1965, (in German). 31 1468. Electronics in mass spectrometry. (USA) A review of the fundamental behaviour of the electronic circuis 465