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1495. Vacuum cement instead of expensive solders
Classified abstracts 1493-1506 22 1493. Calculation of the non-linearity of a diaphragm tensometrie pressure transducer. (USSR) The non-linearity of a diaphragm tensometric pressure transducer with tensoresistors is calculated. A N Grishin and Yu F Kabatov, lzmerit Tekh, No 5, 1971, 31-33 (in
Russian). 22 1494. Theoretical investigation of the limiting characteristics of a quadrupole mass spectrometer. (USSR) Some physical principles are considered which limit improvement of the basic parameters of quadrupole mass spectrometers. The limiting resolving power, mass range, maximum working pressure and dynamic range of the quadrupole mass spectrometer are numerically evaluated. It is shown that the maximum possible resolving power is limited by instabilities in supply voltages and it can be made as high as 75000. The maximum mass range is limited by the electrical strength of vacuum and the accuracy of the mechanical dimensions; it can be as high as 1500 amu. The maximum scanning speed is limited by the time-of-flight of ions with the heaviest mass through the analyzer. A maximum scanning speed of 40,000 amu/sec can be reached. The minimum detectable partial pressure is determined by the sensitivity of ion current measurement and can be as low as 5 × 10 17 torr with a current measuring sensitivity of 10-16 A. The maximum working pressure of 10 -4 torr is determined by ion scattering on residual gas molecules and atoms. The dynamic range of the quadrupole mass spectrometer can be as high as 106. G I SIobodenyuk, Zh Tekh Fiz, 41 (5), 1971, 1016-1022 (in Russian). 23. P L U M B I N G 23 1495. Vacuum cement instead of expensive solders. (USSR) Advantages of the application of vacuum cement instead of expensive solders and brazes in the electro-vacuum industry are discussed. V E Mukhin and V F Poppy, Elektron Prom, No 1, 1971, 107-108 (in
Russian). 25. BAFFLES, TRAPS AND REFRIGERATION E Q U I P M E N T 25 1496. Cooled sorption trap. (USSR) Construction and performance of a cooled sorption trap intended for use in vacuum systems for evacuation of electro-vacuum devices are described. S I Gonikberg and B A Popovich, Elektron Tekh Elektron SVCh, 4, 1971, 134-137 (in Russian). 28. HEATING E Q U I P M E N T AND T H E R M O M E T E R S 28 1497. Laboratory electron-beam melting apparatus. (USSR) A laboratory electron-beam melting apparatus with power of 50 kW, accelerating voltage of 15 to 30 kV and an axial electron gun with lanthanum hexaboride cathode, is described. An ultimate pressure of 10 -6 torr is reached in the working chamber. Using this system, melting, refining, and evaporation of different metals may be performed and ingots with diameter of 60 mm and weight of 6 kg can be obtained. N I Dybovitskiy and D A Noskov, Sb Rab Aspir Tomsk lnst Radio Elektron Tekh, 1, 1969, 231-238 (in Russian).
III. V a c u u m applications 30. EVAPORATION AND SPUTTERING 30 1498. Instrumentation for monitoring and control of vacuum depositions. (Germany) Recent developments in instrumentation for monitoring deposition conditions, particularly film thickness and deposition rate, are reviewed. Methods based on deposited mass, electrical and optical properties, and ionization are included. A n example is given of a programmed control system recently developed to obtain precise and accurately reproducible film system characteristics. W Steckelmacher, Vakuum-Technik, 20 (5), July 1971, 139-150 (in
English). 30 1499. A new ion source for the vacuum sputtering of thin films. (Japan) A n ion source has been developed which includes an electrostatic
deflector; ions emitted from the source are deflected by a set of electrodes one of which is at the anode potential and the other at the accelerating potential. The ion beam has been used to sputter conducting and insulating targets and the data indicate that the deposition rate for a given material is approximately proportional to the primary ion current for a given accelerating voltage. Typical rate of deposition of nickel at 7 cm from the target with a 500/~A, 5 kV ion beam of 3 m m diameter, is about 40 A/min. As a practical application, the Ni40Cu50 per cent alloy film for a strain gauge was deposited by two separate ion guns simultaneously. Composition was regulated by the primary ion beam current. H Tamura, J Vac Soe Japan, 14 (6), 1971, 224-230 (in Japanese.) 30 1500. Growth of amorphous titanium oxide films prepared by cathodic sputtering. (France) Condensation and growth kinetics are investigated for amorphous titanium dioxide films obtained by cold plasma condensation (diode reactive sputtering). The condensation kinetic is expressed as a linear homogeneous function while the growth kinetic could not be described by a continuous linear function. A theoretical model of the nucleation and growth process is presented which explains the anisotropic effect and the hyperdensity of the film. B Laville Saint-Martin et al, Le Vide, 26 (152), March-April 1971, 58-62 (in French). 30 1501. Deposition of highly-reactive metal coatings by a high temperatare technique. (USSR) The possible application of the technique of crucible-less melting in vacuum for the deposition of highly-rcactive metal coatings at high temperature, is examined. The results of investigations on the deposition of titanium alloy films on wires of refractory metals, are presented. A S Kuzmenko, Elektron Tekh Radiokomp, 1, 1970, 101-105 (in
Russian). 30 1502. Prospects of extension of vacuum processing to the mass production of the thin-film elements of integrated circuits. (USSR) The prospects of extending the application of vacuum evaporation processing to the mass production of thin film elements of integrated circuits are discussed. I G Blinov et al, Elektron Tekh Mikroelektron, 2, 1970, 122-130 (in
Russian). 30 1503. Emission current stabilization of two-electrode electron beam evaporators and heaters. (USSR) An emission current stabilizer for medium power two-electrode beam evaporators and heaters is described. S A Dunskiy and A A Pakhuchiy, Prim Sovr Tekhn Sredstv System A vtomat Mekhaniz Liteyn Proc, Skkts 3, Kiev 1969, 29-32 (in Russian). 3O 1504. Non-symmetrical strip lines in thin-film microwave devices. (Poland) Thin film transmission lines for microwave devices are prepared by evaporation of copper and chromium layers on ceramic substrates in vacuum at pressure of 5 × 10-~ torr. E Obuchowicz et al, Prace PIE, 11 (2), 1970, 107-111 (in Polish). 30 1505. Influence of texture on piezoelectric properties of selenium thin films. (USSR) The piezoelectric properties of selenium thin films prepared in vacuum at 10-4 torr are investigated. The dependence of the piezoelectric effect on the texture of the thin selenium films is determined. A V Shlbaeva et al, Izv VUZ Fiz, No 7, 1970, 23-27 (in Russian). 30 1506. The mechanism of formation of the ion component in the cathodic sputtering of metals. (USSR) The features of physical systems for the cathodic sputtering of metals are discussed to elucidate the mechanism of formation of the ion component of the process. The energy spectra of sputtered molybdenum atoms produced by bombardment of a polycrystalline molybdenum target by mercury ions from a plasma impinging in the normal direction to the surface, are investigated. The sputtered atoms of target material were ionized by electron impact in low-pressure plasma. The energy of these ions was analyzed with the aid of a plane retarding field with subsequent separation according to masses in a 619
Russian). 22 1494. Theoretical investigation of the limiting characteristics of a quadrupole mass spectrometer. (USSR) Some physical principles are considered which limit improvement of the basic parameters of quadrupole mass spectrometers. The limiting resolving power, mass range, maximum working pressure and dynamic range of the quadrupole mass spectrometer are numerically evaluated. It is shown that the maximum possible resolving power is limited by instabilities in supply voltages and it can be made as high as 75000. The maximum mass range is limited by the electrical strength of vacuum and the accuracy of the mechanical dimensions; it can be as high as 1500 amu. The maximum scanning speed is limited by the time-of-flight of ions with the heaviest mass through the analyzer. A maximum scanning speed of 40,000 amu/sec can be reached. The minimum detectable partial pressure is determined by the sensitivity of ion current measurement and can be as low as 5 × 10 17 torr with a current measuring sensitivity of 10-16 A. The maximum working pressure of 10 -4 torr is determined by ion scattering on residual gas molecules and atoms. The dynamic range of the quadrupole mass spectrometer can be as high as 106. G I SIobodenyuk, Zh Tekh Fiz, 41 (5), 1971, 1016-1022 (in Russian). 23. P L U M B I N G 23 1495. Vacuum cement instead of expensive solders. (USSR) Advantages of the application of vacuum cement instead of expensive solders and brazes in the electro-vacuum industry are discussed. V E Mukhin and V F Poppy, Elektron Prom, No 1, 1971, 107-108 (in
Russian). 25. BAFFLES, TRAPS AND REFRIGERATION E Q U I P M E N T 25 1496. Cooled sorption trap. (USSR) Construction and performance of a cooled sorption trap intended for use in vacuum systems for evacuation of electro-vacuum devices are described. S I Gonikberg and B A Popovich, Elektron Tekh Elektron SVCh, 4, 1971, 134-137 (in Russian). 28. HEATING E Q U I P M E N T AND T H E R M O M E T E R S 28 1497. Laboratory electron-beam melting apparatus. (USSR) A laboratory electron-beam melting apparatus with power of 50 kW, accelerating voltage of 15 to 30 kV and an axial electron gun with lanthanum hexaboride cathode, is described. An ultimate pressure of 10 -6 torr is reached in the working chamber. Using this system, melting, refining, and evaporation of different metals may be performed and ingots with diameter of 60 mm and weight of 6 kg can be obtained. N I Dybovitskiy and D A Noskov, Sb Rab Aspir Tomsk lnst Radio Elektron Tekh, 1, 1969, 231-238 (in Russian).
III. V a c u u m applications 30. EVAPORATION AND SPUTTERING 30 1498. Instrumentation for monitoring and control of vacuum depositions. (Germany) Recent developments in instrumentation for monitoring deposition conditions, particularly film thickness and deposition rate, are reviewed. Methods based on deposited mass, electrical and optical properties, and ionization are included. A n example is given of a programmed control system recently developed to obtain precise and accurately reproducible film system characteristics. W Steckelmacher, Vakuum-Technik, 20 (5), July 1971, 139-150 (in
English). 30 1499. A new ion source for the vacuum sputtering of thin films. (Japan) A n ion source has been developed which includes an electrostatic
deflector; ions emitted from the source are deflected by a set of electrodes one of which is at the anode potential and the other at the accelerating potential. The ion beam has been used to sputter conducting and insulating targets and the data indicate that the deposition rate for a given material is approximately proportional to the primary ion current for a given accelerating voltage. Typical rate of deposition of nickel at 7 cm from the target with a 500/~A, 5 kV ion beam of 3 m m diameter, is about 40 A/min. As a practical application, the Ni40Cu50 per cent alloy film for a strain gauge was deposited by two separate ion guns simultaneously. Composition was regulated by the primary ion beam current. H Tamura, J Vac Soe Japan, 14 (6), 1971, 224-230 (in Japanese.) 30 1500. Growth of amorphous titanium oxide films prepared by cathodic sputtering. (France) Condensation and growth kinetics are investigated for amorphous titanium dioxide films obtained by cold plasma condensation (diode reactive sputtering). The condensation kinetic is expressed as a linear homogeneous function while the growth kinetic could not be described by a continuous linear function. A theoretical model of the nucleation and growth process is presented which explains the anisotropic effect and the hyperdensity of the film. B Laville Saint-Martin et al, Le Vide, 26 (152), March-April 1971, 58-62 (in French). 30 1501. Deposition of highly-reactive metal coatings by a high temperatare technique. (USSR) The possible application of the technique of crucible-less melting in vacuum for the deposition of highly-rcactive metal coatings at high temperature, is examined. The results of investigations on the deposition of titanium alloy films on wires of refractory metals, are presented. A S Kuzmenko, Elektron Tekh Radiokomp, 1, 1970, 101-105 (in
Russian). 30 1502. Prospects of extension of vacuum processing to the mass production of the thin-film elements of integrated circuits. (USSR) The prospects of extending the application of vacuum evaporation processing to the mass production of thin film elements of integrated circuits are discussed. I G Blinov et al, Elektron Tekh Mikroelektron, 2, 1970, 122-130 (in
Russian). 30 1503. Emission current stabilization of two-electrode electron beam evaporators and heaters. (USSR) An emission current stabilizer for medium power two-electrode beam evaporators and heaters is described. S A Dunskiy and A A Pakhuchiy, Prim Sovr Tekhn Sredstv System A vtomat Mekhaniz Liteyn Proc, Skkts 3, Kiev 1969, 29-32 (in Russian). 3O 1504. Non-symmetrical strip lines in thin-film microwave devices. (Poland) Thin film transmission lines for microwave devices are prepared by evaporation of copper and chromium layers on ceramic substrates in vacuum at pressure of 5 × 10-~ torr. E Obuchowicz et al, Prace PIE, 11 (2), 1970, 107-111 (in Polish). 30 1505. Influence of texture on piezoelectric properties of selenium thin films. (USSR) The piezoelectric properties of selenium thin films prepared in vacuum at 10-4 torr are investigated. The dependence of the piezoelectric effect on the texture of the thin selenium films is determined. A V Shlbaeva et al, Izv VUZ Fiz, No 7, 1970, 23-27 (in Russian). 30 1506. The mechanism of formation of the ion component in the cathodic sputtering of metals. (USSR) The features of physical systems for the cathodic sputtering of metals are discussed to elucidate the mechanism of formation of the ion component of the process. The energy spectra of sputtered molybdenum atoms produced by bombardment of a polycrystalline molybdenum target by mercury ions from a plasma impinging in the normal direction to the surface, are investigated. The sputtered atoms of target material were ionized by electron impact in low-pressure plasma. The energy of these ions was analyzed with the aid of a plane retarding field with subsequent separation according to masses in a 619