165. Redistribution of secondary electrons on target surface

Classified abstracts 165-179 33 165. Redistribution of secondary electrons on target surface. (USSR) The problem of the density distribution of an electron current incident to a target under the action of an uniform electrostatic retarding field is solved for the case of plane target and plane collector, Maxwellian distribution of initial velocities of secondary electrons and cosine distribution of exit angle. G F Semenov, Radiotekh Elektron, 16 (8), 1971, 1536 (in Russian). 33 166. Optical properties of Si and Ge layers disordered by ionic bombardment. (USSR) Experimental data on the optical properties of non-annealed ionimplanted Si and Ge layers are discussed. The reflection spectra of germanium films subjected to irradiation by ions of B, C, P and Ge with energy of 40 keV and dose of 3 × 1015 cm -~ and the adsorption tails of silicon films implanted with ions of Na, Kr, Zn, Si and Ne with energy of 40 keV and dose of 6× 1015 cm -2 are explained. L N Streltsov and I B Khaybullin, Fiz Tekh Polup, 5 (12), 1971, 23722374 (in Russian). 33 167. Optical adsorption in germanium subjected to oxygen-ion bombardment. (USSR) Possibility of fabricating germanium oxide films by implantation of accelerated oxygen ions with energy of 20 keV in germanium is examined. Experimental data on infra-red adsorption show that implantation of oxygen ions in germanium at doses corresponding to stoichiometric composition GeO2 results in the formation of thin dielectric films of germanium oxide with hexagonal structure. I P Akimchenko et al, Fiz Tekh Polup, 5 (12), 1971, 2348-2350 (in

Russian). 33 168. Spectral-kinetic characteristics of radical-recombination luminescence in crystal-pbospbors activated by manganese. (USSR) Manganese-activated crystal-phosphors were investigated in atomic flows of hydrogen at pressures of 5 × 10 -1 to 6 × 10 -1 torr and nitrogen at pressures of 2 × 10 -~ to 5 × 10 -3 torr. The obtained data are analyzed from the viewpoint of the mechanism of luminescence due to adsorption, strengthening of the bond, and recombination of free atoms and radicals. Yu M Naslednikov et al, Izv VUZ Fiz, No 11, 1971, 16-21 (in Russian). 33 169. Influence of ion bombardment on the redistribution of charge carriers in a diffusion layer. (USSR) Influence of bombardment by protons with energy of 100 keV on the redistribution of charge carriers in the diffusion layer of n-type on p-type silicon is investigated. The n-Si layer was prepared by phosphorus diffusion at 1200°C. A S Baranova and A F Khokhlov, Uch Zap Gorkov Univ Ser Fiz, No 126, 1971, 21-24 (in Russian). 33 170. Investigation of interface levels in Si-SiO~ structures after ion bombardment. (USSR) Energy distribution of the density of boundary states in Si-SiO2 structures after bombardment by boron and phosphorous ions, is investigated. It is shown that ion bombardment produces in the Si-SiO2 interface energy levels with ionization energy of 0.05 to 0.25 eV, the density of which depends on the radiation dose. It is observed that passivation of the layer by phosphorus-silicate glass considerably reduces the density of interface states. Ya A Fedotov et al, Electronic Technology, Scient-tech Coil, Semiconductor Devices, No 4, 1971, 125-129 (in Russian). 33 171. Influence of boron and phosphorus ion bombardment on the etching rate of thermally grown oxide. (USSR) It is shown that bombardment by boron and phosphorus ions with energies of 80 and 100 keV produces structural defects in a thermally grown SiO2 layer and increases its etching rate. O V Sopov et al, Electronic Technology, Scient-techn Coil, Semiconductor Devices, No 4, 1971, 112-119 (in Russian). 33 172. Disturbance of oxide films by electron beams. (USSR) A simple phenomenological model of the process of disturbance of alkaline-earth metal oxide film efficient secondary emitters by electron bombardment is presented. The model is based on the assumptions that the probability of oxide dissociation depends only on the bombarding electron current density and energy and that the

probability of evaporation of oxygen and metal formed at dissociation depends on temperature. A N Andronov and V N Lepeshinskaya, Radiotekh Elektron, 16 (10), 1971, 2005-2006 (in Russian). 33 173. Influence of electrostatic field on surface diffusion in a field electron emitter. (USSR) Equations describing the effect of electrostatic field on the parameters of diffusion are presented. The relation between the parameters of surface diffusion and the energy of free surface is given. V T Borisov and V V Gal, Radiotekh Elektron, 16 (IlL 1971,

2238-2239 (in Russian). 33 174. Activation of palladium membrane by titanium hydride with the aim of reducing temperatare of hydrogen diffusion purification. (USSR) It is shown that permeation of hydrogen through an activated membrane at 60°C is 5 times lower than that through a non-activated membrane at 300°C. Coating both sides of a commercial palladium membrane with titanium hydride (obtained by free deposition with subsequent firing-in and repeated hydridation) provides, at a temperature of 17-70°C, a hydrogen permeation commensurate with that through commercial palladium at temperatures of 250-300°C. The decrease in the hydrogen permeation ability after 3 months' operation of the membrane, does not exceed 22-25 per cent of the initial value. M A Domnitskaya et al, New Semiconductor Technology, Coil, Voronezh Univ 1971, 89-93 (in Russian). 33 175. Non-contact method of checking parameters of semiconductor structures with directed electron beam. (USSR) A method of measurement of the diffusion length, reverse current of p-n junctions, life-time of minor carriers and width of the depletion layer in vacuum with the aid of scanning electron microscope is described. V I Kononov et al, New Semi-conductor Technol, Coil, Voronezh Univ 1971, 126-133 (in Russian). 33 176. Investigation of semiconductor devices with a scanning electron microscope. (USSR) Application possibilities of a vacuum scanning electron microscope for the investigation of semi-conductor devices fabricated by planar technology are described. The electron scanning microscope enables checking of the surface microgcometry and determination of the position of a p-n junction below the oxide layer or metallization. A B Volkov et al, New Semiconductor Technol, Coil, Voronezh Univ 1971, 134-139 (in Russian). 33 177. Ion current integrator. (USSR) An ion current integrator enabling determination of the dose of implanted ions with adequate accuracy is described. Its application in the ion implantation process affords reproducible results. Yu I Novikov et al, New Semiconductor Technol, Coil, Voronezh Univ 1971, 140-142 (in Russian). 33 178. Use of a medical X-ray image intensifier in Lane investigations. (Hungary). An X-ray image intensifier commonly used for medical diagnostic purposes can be successfully used for microstructure studies. The image intensifier provides a third method of recording in addition to films and counter tubes. In situ investigation of transformation processes and observation of fast processes are made possible by application of vacuum X-ray image intensifier in Laue studies. E G Fuchs and L Varga, Acta Tech Acad Sci Hung, 70 (1/2), 1971, 191-197 (in German). 37. METALLURGY, INORGANIC CHEMISTRY, ANALYTICAL CHEMISTRY 37 179. Nature of luminescence centres in an anodic oxide film on aluminium. (USSR) Photoluminescence spectra and thermal dependences of photoluminescent brightness in an anodic oxide layer on aluminium are investigated in air and in vacuum at 1 torr. It is supposed that the adsorption of H~O on luminescence ccntrcs results in photoluminescence. T Z Tseytina and M I Eydelberg, Izv VUZ Fiz, No 11, 1971, 142-144

(in Russian). 75