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337. Precision ends for fused silica tubes
251
Abstracts 336--345
Investigation of Breakdown in Vaccuum.
45.
43 • 18 : 42 Abstr. No. 164.
Soldering, Welding and Brazing
45 336. The Technique of Soldering in Vacuum. The technology and selection of suitable solders and soldering alloys including detailed description of a vacuum soldering plant. Bernhard F. und H. Bumm, Vakuum-Technik 7, 153-158, 1958.
46.
Glass
Blowing, Glass-to-metal and metal Sealing Techniques
Ceramic-to46
337. Precision Ends for Fused Silica Tubes. Note by J. Conaboy, J. Sci. lnstrum. 36, 148, March 1959. 46 338. Contribution to the Question of Electrolysis of Glass in Electronic Valves. F. Engel, Vakuum-Technik 8, 44-47, 1959. 46 339. Vacuum Tight Seals between Molybdenum and Glass. Methods for the production of glass seals to molybdenum rods up to 10 m m din. and ring seals up to 75 m m din. without the need for a special protective hydrogen atmosphere are discussed. H. Adam, Vakuum-Technik 8, 59-62, 1959. 46:33 Mica as Constructional Material for use in High Vacuum. Abstr. No. 284.
47.
Outgassing
data, Vapour Pressure G e t t e r i n g data
data
and
47 339. Vapor Pressure, Mass and Infrared Spectra of Hexaborane. Sidney G. Gibbins and I. Shapiro, J. Chem. Phys. 30, 1483-1485, June 1959.
49.
Miscellaneous Meterials and Techniques
49 340. Vaporization of Beryllium Oxide and its Reaction with Tungsten. W. A. Chupka, Joseph Berkowitz and Clayton F. Giese, J. Chem. Phys. 30, 827-834, March 1959. 49 341. Free Evaporation of Alkali Halide Crystals. G. M. Rothberg, M. Eisenstadt and P. Kush, J. Chem. Phys. 30, 517-527, Feb. 1959. 49 342. Structure and Adsorption Characteristics of Clean Surfaces of Germanium and Silicon. A vacuum system designed for minimum contamination is briefly described. It has been found that the rate of absorption of oxygen on silicon and germanium surfaces is proportional to the pressure, at least for pressures below 10 -e Torr. Methods of regenerating the clean surfaces are described. A.G. R. E. Schlier and H. E. Farnsworth, J. Chem. Phys. 30, 917-926, April 1959. 49 343. Adsorption of Hydrogen on Silicon. The adsorption of both atomic and molecular hydrogen on silicon films and single crystals has been studied. The kinetics of the processes as a function of coverage and gas pressures are discussed, and it is shown that in the case of adsorption of atoms, two types of adsorbed species exist. Data obtained for the areas of silicon films as a function of the n u m b e r of silicon atoms evaporated are in good agreement with previous work. (Author) J. T. Law, J. Chem. Phys. 30, 1568-1576, June 1959. 49 344. Adsorption of Carbon Dioxide on Tungsten, Note by D. O. Hayward and R. Gomer, J. Chem. Phys. 30, 1617, June 1959. 49 345. Evaporation of Aluminium Oxide. Note by Gerold W. Sears and Louis Nuvias, J. Chem. Phys. 30, 1111-1112, April 1959.
Abstracts 336--345
Investigation of Breakdown in Vaccuum.
45.
43 • 18 : 42 Abstr. No. 164.
Soldering, Welding and Brazing
45 336. The Technique of Soldering in Vacuum. The technology and selection of suitable solders and soldering alloys including detailed description of a vacuum soldering plant. Bernhard F. und H. Bumm, Vakuum-Technik 7, 153-158, 1958.
46.
Glass
Blowing, Glass-to-metal and metal Sealing Techniques
Ceramic-to46
337. Precision Ends for Fused Silica Tubes. Note by J. Conaboy, J. Sci. lnstrum. 36, 148, March 1959. 46 338. Contribution to the Question of Electrolysis of Glass in Electronic Valves. F. Engel, Vakuum-Technik 8, 44-47, 1959. 46 339. Vacuum Tight Seals between Molybdenum and Glass. Methods for the production of glass seals to molybdenum rods up to 10 m m din. and ring seals up to 75 m m din. without the need for a special protective hydrogen atmosphere are discussed. H. Adam, Vakuum-Technik 8, 59-62, 1959. 46:33 Mica as Constructional Material for use in High Vacuum. Abstr. No. 284.
47.
Outgassing
data, Vapour Pressure G e t t e r i n g data
data
and
47 339. Vapor Pressure, Mass and Infrared Spectra of Hexaborane. Sidney G. Gibbins and I. Shapiro, J. Chem. Phys. 30, 1483-1485, June 1959.
49.
Miscellaneous Meterials and Techniques
49 340. Vaporization of Beryllium Oxide and its Reaction with Tungsten. W. A. Chupka, Joseph Berkowitz and Clayton F. Giese, J. Chem. Phys. 30, 827-834, March 1959. 49 341. Free Evaporation of Alkali Halide Crystals. G. M. Rothberg, M. Eisenstadt and P. Kush, J. Chem. Phys. 30, 517-527, Feb. 1959. 49 342. Structure and Adsorption Characteristics of Clean Surfaces of Germanium and Silicon. A vacuum system designed for minimum contamination is briefly described. It has been found that the rate of absorption of oxygen on silicon and germanium surfaces is proportional to the pressure, at least for pressures below 10 -e Torr. Methods of regenerating the clean surfaces are described. A.G. R. E. Schlier and H. E. Farnsworth, J. Chem. Phys. 30, 917-926, April 1959. 49 343. Adsorption of Hydrogen on Silicon. The adsorption of both atomic and molecular hydrogen on silicon films and single crystals has been studied. The kinetics of the processes as a function of coverage and gas pressures are discussed, and it is shown that in the case of adsorption of atoms, two types of adsorbed species exist. Data obtained for the areas of silicon films as a function of the n u m b e r of silicon atoms evaporated are in good agreement with previous work. (Author) J. T. Law, J. Chem. Phys. 30, 1568-1576, June 1959. 49 344. Adsorption of Carbon Dioxide on Tungsten, Note by D. O. Hayward and R. Gomer, J. Chem. Phys. 30, 1617, June 1959. 49 345. Evaporation of Aluminium Oxide. Note by Gerold W. Sears and Louis Nuvias, J. Chem. Phys. 30, 1111-1112, April 1959.