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373. Low temperature proton irradiation of single crystals of pure and impurity bismuth
Classified abstracts
362-376
time the fundamental photoconductivity is negative. Staying in an oxygen ambient this behaviour is found to become gradually normalized through a temperature activated process. Such normalized surfaces show a very stable (d3 x 43) superstructure of oxygen, while cleaved polar surfaces as well as real (0001) surfaces always give a (1 x 1) structure. An interpretation is given, based on the interaction between oxygen and a set of surface states. R Leysen et al, P@s Stat Sol (a), 18 (2), 1973, 613-621.
16
362. Irradiation
softening in pure iron single crystals. (Germany)
The effect of 1.3 MeV electron irradiation on the plastic deformation of iron single crystals has been investigated in the temperature range from 4.2 to 100°K. The high energy electron beam was directed to the specimen through a thin stainless steel window which separated the vacuum chamber of the accelerator from the specimen chamber. (USA) A Sato et al, Phys Star Sol (a), 18 (2), 1973, 699-709. 363. Auger electron spectroscopy
16 of silicon surfaces. (Czechoslovakia)
The results of measurement of spectra of Auger electrons from silicon surfaces preformed at pressure of 2 to 5 x lo-’ torr are reported. A four-grid retarding field analyzer of a LEED apparatus was used in experiments. In this pressure range rapid oxidation and carbonization of the uppermost layers take place. The changes of characteristic energies in Auger and loss spectra related to the change of chemical composition of the surface are found. It is shown that the combination of the characteristic loss spectroscopy with Auger electron spectroscopy makes possible the determination of chemical shifts. The measurements of chemical shifts of the individual energy levels of silicon atoms in both pure and contaminated silicon surfaces, in SiO, and Fe-Si alloy are described. Possibilities and limitations of the heating for silicon surface cleaning are examined. B Vlachova,
Czech J Phys, B23 (9), 1973, 931-946.
364. Chemical
equilibria in heterogeneous
16 systems gas-solid. (Czecho-
slovakia) The methods used in studying chemical hetelbgeneous gas-solid equilibria in various pressure ranges are reviewed and a critical analysis of factors playing an important role in equilibria measurements of such type is given. Statical, effusion, flow and circulation methods are considered. L Bartovska and C Cemy, Cyem L&y, 67 (9), 1973, 938-951 (in Czech).
16 365. Concentration profile of phosphorus implanted in silicon. (Czechoslovakia) Using the activation analysis with taking off of thin layers by anodic oxidation, the concentration profile of phosphorus implanted in silicon is determined. 30 keV phosphorus ions were implanted with a dose 3 x 1OL5cm-Z in silicon at 450°C. Annealing of implanted silicon was carried out at 600°C. P Kotas and F Cerny, Chem Listy, 67 (9), 1973, 977-981 (in Czech). 16 366. Utilization
of electron metallic insertions. (USSR)
irradiation
for local separation
of non-
It is found that irradiation of metal by electrons in a vacuum chamber increases the rate of ‘separation of nonmetallic insertions at application of the technique of local electrolytic separation of non-metallic insertions from surace of polished steel specimens. The metallic insertions are not irradiated to avoid their decomposition. V P Pirozhkova
et al, Zuuod Lab, 38 (9), 1972, 1111 (in Russian).
367. Electra-physical method of determination cients of gases in metallic films. (USSR)
16:30 of the diffusion coeffi-
Using the method of measurement of electrical resistance, the diffusion at room temperature of hydrogen from gas phase at pressure 2.5 x lo-“ torr into thin titanium films with thickness of 40 to 50 pm, deposited in vacuum less than 10m9 torr on glass substrates, is investigated. V S Batalov, Zuuod Lab, 38 (9), 1972, 11l&l 117 (in Russian). 16 368. Investigation of the process of generation of defects at ion implantation. (Germany) Using the methods of electron paramagnetic resonance and reflection
high-energy electron diffraction, generation of defects is investigated in Si at irradiation by Ne+, Ar+, Xe+, O+, P+ and B+ ions with energies of 40 to 280 keV. N N Gerasimenko et al, Proc Znt Work Conf on Ion Implant in Semicon, Rossendorf 1972, 45-52 (in Russian). 369. Investigation of distribution uniformity of surface distribution
16 of concentration and evaluation of of phosphorus implanted in silicon.
(Germany) Using the methods of activation analysis and measurement of electrical resistance at gradual removing of thin Si films, distribution of concentration and uniformity of surface distribution of phosphorus is investigated in Si single crystals irradiated by P ions with energy of 30 to 60 keV up to doses of 1Ol5 cme2. A Golauski et al, Proc Znt Work Conf on Ion Implant in Semieon, Rossendorf
1972, 165-l 72 (in Russian).
370. Investigation of distribution of concentrations boron implanted in silicon. (USSR)
of phosphorus
16 and
The influence of temperature and time of annealing on distribution of concentrations of P and B, introduced into single crystal silicon by 35 keV ion implantation, is investigated. Ya Krylov et al, Proc Znt Work Conf on Ion Implant Rossendorf 1972, 157-l 63 (in Russian). 371. Structural transformations and formation implantation in diamond. (Germany)
in Semicon,
of compounds
16 at ion
Using the methods of measurement of electrical conductivity and electron diffraction, structural changes and formation of compounds at implantation of 19B, “C, 14N, Z”Ne, **Si, 31P, “OAr and 13’Xe with energy up to 40 keV in diamonds are investigated. 1 P Akimchenko et al Proc Znt Work Conf on Ion Implant in Semicon, Rossendorf
1972, 53-63 (in Russian). 16
Determination
of implantation
profiles
in silicon.
(Germany) Various methods for measurement of film thickness and determination of concentration of implanted impurity in silicon are considered. The activation methods using neutrons and charged aparticles and the method of ion implantation of radioactive impurity are treated in detail.
372.
R Ross et al, Proc Znt Work Conf on Ion Implant in Semicon, dorf 1972, 151-156 (in German).
Rossen-
16 of single crystals of pure and
373. Low temperature proton irradiation impurity bismuth. (Germany)
Single crystal samples of pure Bi and 170°K by 6.5 MeV protons. Electrical investigated in dependence on irradiation G Goetz et al, Proc Znt Work Conf on Ion
alloys Bi-Pb irradiated at conductivity of crystals is dose and Pb concentration. Implant in Semicon,
Rossen-
dorf 1972, 79-82 (in Russian).
16 374. The influence of ion bombardment on the optical properties of alkali halide crystals. (Germany) The influence of proton and He+, Li+ and Na+ ion bombardment with energy of 300 keV to 1.6 MeV on optical properties of alkali halide crystals is investigated. Experimental results are discussed. H Karge et al, Proc Znt Work Conf on Ion Implant in Semicon, Rossendorf
1972, 215-218.
375. X-ray (Germany)
investigation
of structure
of iondoped
silicon
16 crystals.
Using the X-ray methods, structure of silicon single crystals doped by boron ion implantation is investigated. An increase in lattice parameter is observed in surface layers after implantation. Yu Auleitner et al, Proc Znt Work Conf on Ion Implant in Semicon, Rossendorf
1972, 65-77 (in Russian).
376. Investigation of properties of doped semiconductors of ion-backscattering. (Germany)
16 by the method
An equipment for investigation of properties of doped semiconductors by the method of proton back-scattering is described. The channeling effect of protons in Si has been observed. A Fiderkevich and A Golanski, Proc Znt Work Conf on Ion Implant in Semicon, Rossendorf 1972, 101-104 (in Russian). 219
362-376
time the fundamental photoconductivity is negative. Staying in an oxygen ambient this behaviour is found to become gradually normalized through a temperature activated process. Such normalized surfaces show a very stable (d3 x 43) superstructure of oxygen, while cleaved polar surfaces as well as real (0001) surfaces always give a (1 x 1) structure. An interpretation is given, based on the interaction between oxygen and a set of surface states. R Leysen et al, P@s Stat Sol (a), 18 (2), 1973, 613-621.
16
362. Irradiation
softening in pure iron single crystals. (Germany)
The effect of 1.3 MeV electron irradiation on the plastic deformation of iron single crystals has been investigated in the temperature range from 4.2 to 100°K. The high energy electron beam was directed to the specimen through a thin stainless steel window which separated the vacuum chamber of the accelerator from the specimen chamber. (USA) A Sato et al, Phys Star Sol (a), 18 (2), 1973, 699-709. 363. Auger electron spectroscopy
16 of silicon surfaces. (Czechoslovakia)
The results of measurement of spectra of Auger electrons from silicon surfaces preformed at pressure of 2 to 5 x lo-’ torr are reported. A four-grid retarding field analyzer of a LEED apparatus was used in experiments. In this pressure range rapid oxidation and carbonization of the uppermost layers take place. The changes of characteristic energies in Auger and loss spectra related to the change of chemical composition of the surface are found. It is shown that the combination of the characteristic loss spectroscopy with Auger electron spectroscopy makes possible the determination of chemical shifts. The measurements of chemical shifts of the individual energy levels of silicon atoms in both pure and contaminated silicon surfaces, in SiO, and Fe-Si alloy are described. Possibilities and limitations of the heating for silicon surface cleaning are examined. B Vlachova,
Czech J Phys, B23 (9), 1973, 931-946.
364. Chemical
equilibria in heterogeneous
16 systems gas-solid. (Czecho-
slovakia) The methods used in studying chemical hetelbgeneous gas-solid equilibria in various pressure ranges are reviewed and a critical analysis of factors playing an important role in equilibria measurements of such type is given. Statical, effusion, flow and circulation methods are considered. L Bartovska and C Cemy, Cyem L&y, 67 (9), 1973, 938-951 (in Czech).
16 365. Concentration profile of phosphorus implanted in silicon. (Czechoslovakia) Using the activation analysis with taking off of thin layers by anodic oxidation, the concentration profile of phosphorus implanted in silicon is determined. 30 keV phosphorus ions were implanted with a dose 3 x 1OL5cm-Z in silicon at 450°C. Annealing of implanted silicon was carried out at 600°C. P Kotas and F Cerny, Chem Listy, 67 (9), 1973, 977-981 (in Czech). 16 366. Utilization
of electron metallic insertions. (USSR)
irradiation
for local separation
of non-
It is found that irradiation of metal by electrons in a vacuum chamber increases the rate of ‘separation of nonmetallic insertions at application of the technique of local electrolytic separation of non-metallic insertions from surace of polished steel specimens. The metallic insertions are not irradiated to avoid their decomposition. V P Pirozhkova
et al, Zuuod Lab, 38 (9), 1972, 1111 (in Russian).
367. Electra-physical method of determination cients of gases in metallic films. (USSR)
16:30 of the diffusion coeffi-
Using the method of measurement of electrical resistance, the diffusion at room temperature of hydrogen from gas phase at pressure 2.5 x lo-“ torr into thin titanium films with thickness of 40 to 50 pm, deposited in vacuum less than 10m9 torr on glass substrates, is investigated. V S Batalov, Zuuod Lab, 38 (9), 1972, 11l&l 117 (in Russian). 16 368. Investigation of the process of generation of defects at ion implantation. (Germany) Using the methods of electron paramagnetic resonance and reflection
high-energy electron diffraction, generation of defects is investigated in Si at irradiation by Ne+, Ar+, Xe+, O+, P+ and B+ ions with energies of 40 to 280 keV. N N Gerasimenko et al, Proc Znt Work Conf on Ion Implant in Semicon, Rossendorf 1972, 45-52 (in Russian). 369. Investigation of distribution uniformity of surface distribution
16 of concentration and evaluation of of phosphorus implanted in silicon.
(Germany) Using the methods of activation analysis and measurement of electrical resistance at gradual removing of thin Si films, distribution of concentration and uniformity of surface distribution of phosphorus is investigated in Si single crystals irradiated by P ions with energy of 30 to 60 keV up to doses of 1Ol5 cme2. A Golauski et al, Proc Znt Work Conf on Ion Implant in Semieon, Rossendorf
1972, 165-l 72 (in Russian).
370. Investigation of distribution of concentrations boron implanted in silicon. (USSR)
of phosphorus
16 and
The influence of temperature and time of annealing on distribution of concentrations of P and B, introduced into single crystal silicon by 35 keV ion implantation, is investigated. Ya Krylov et al, Proc Znt Work Conf on Ion Implant Rossendorf 1972, 157-l 63 (in Russian). 371. Structural transformations and formation implantation in diamond. (Germany)
in Semicon,
of compounds
16 at ion
Using the methods of measurement of electrical conductivity and electron diffraction, structural changes and formation of compounds at implantation of 19B, “C, 14N, Z”Ne, **Si, 31P, “OAr and 13’Xe with energy up to 40 keV in diamonds are investigated. 1 P Akimchenko et al Proc Znt Work Conf on Ion Implant in Semicon, Rossendorf
1972, 53-63 (in Russian). 16
Determination
of implantation
profiles
in silicon.
(Germany) Various methods for measurement of film thickness and determination of concentration of implanted impurity in silicon are considered. The activation methods using neutrons and charged aparticles and the method of ion implantation of radioactive impurity are treated in detail.
372.
R Ross et al, Proc Znt Work Conf on Ion Implant in Semicon, dorf 1972, 151-156 (in German).
Rossen-
16 of single crystals of pure and
373. Low temperature proton irradiation impurity bismuth. (Germany)
Single crystal samples of pure Bi and 170°K by 6.5 MeV protons. Electrical investigated in dependence on irradiation G Goetz et al, Proc Znt Work Conf on Ion
alloys Bi-Pb irradiated at conductivity of crystals is dose and Pb concentration. Implant in Semicon,
Rossen-
dorf 1972, 79-82 (in Russian).
16 374. The influence of ion bombardment on the optical properties of alkali halide crystals. (Germany) The influence of proton and He+, Li+ and Na+ ion bombardment with energy of 300 keV to 1.6 MeV on optical properties of alkali halide crystals is investigated. Experimental results are discussed. H Karge et al, Proc Znt Work Conf on Ion Implant in Semicon, Rossendorf
1972, 215-218.
375. X-ray (Germany)
investigation
of structure
of iondoped
silicon
16 crystals.
Using the X-ray methods, structure of silicon single crystals doped by boron ion implantation is investigated. An increase in lattice parameter is observed in surface layers after implantation. Yu Auleitner et al, Proc Znt Work Conf on Ion Implant in Semicon, Rossendorf
1972, 65-77 (in Russian).
376. Investigation of properties of doped semiconductors of ion-backscattering. (Germany)
16 by the method
An equipment for investigation of properties of doped semiconductors by the method of proton back-scattering is described. The channeling effect of protons in Si has been observed. A Fiderkevich and A Golanski, Proc Znt Work Conf on Ion Implant in Semicon, Rossendorf 1972, 101-104 (in Russian). 219