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392. Adsorption of nitrogen and argon on CaA zeolite modified by previous sorption of ammonia
Classified
abstracts
392-406
392. Adsorption of nitrogen and argon on CaA previous sorption of ammonia. (USSR)
zeolite moditied
16 by
Adsorption of N, and Ar at temperature 78°K on CaA zeolite modified by previous adsorption of ammonia is investigated in the pressure tange 1 x 1O-5 to 100 torr. Adsorption ability of modified zeolite is reduced due to partial filling of adsorption space by ammonia. V M Lunev and V S Kogan, Probl Atomic Sci Technol, Coil, Kharkov 1971, 95-98 (in Russian). 16 393. Dependence of sorption kinetics on the degree of black of cooling surface. (USSR)
The influence of thickness of adsorbent layer and the degree of black of surface of vessel with cooling agent on sorption kinetics and attained pressure is investigated. Blackening of surface of vessel with cooling agent lowers the attained pressure by a half of order of magnitude. V I Kupriyanov et al, Probl Atomic 98-101 (in Russian). 394. Application of ion implantation semiconductor. (Germany)
Sri Technol,
CON, Kharkov
1971,
16 for preparation of contacts metal-
It is shown that uniform and low-resistance contacts to GaAs can be prepared by implantation of Ge, Sn, Ag, Zn, Ni and Cd ions with energies of 5 to 60 keV. W Rosinski, Proc Int Work Conf on Ion Implant in Semicon, dorf 1972, 201-204 (in Russian). 395. Utilization of the method of oxidizing melting determination of carbon in metals and investigation contamination of tantalum foils. (USSR)
Rossen-
16 in vacuum for of sources of
Utilization of the method of oxidizing melting in vacuum for determination of carbon content in niobium and tantalum is investigated. K Yu Natanson et al, Scient Rep of Design Inst of Rare Metal Industry, No 47, 1973, 180-190
(in Russian).
396. Preparation of p-n junctions bombardment. (USSR)
in silicon carbide
by lithium
16 ion
Using the method of implantation of lithium ions with energy 30 keV, electron-hole junctions have been obtained in silicon carbide OJ hexagonal modification. The penetration depth of 30 keV ions in Sic is 0.5 to 0.6 pm. Characteristics of the prepared p-n junctions were investigated. Sh A Mirsagatov et al, Izv AN 1973, 374 (in Russian).
Uz SSR
Ser Fiz Mat
Nauk,
No 2, 16
Surface structure of silicon single crystals is investigated after diffusion of impurities and thermal treatment in vacuum 10m5 torr and argon ambient. Experimental results are discussed. L Kohler and B Rausch, Krist und Techn, 7 (1 l), 1972, 1219-1224 (in German). in silicon caused by ion implantation
16 and its
Influence of irradiation dose, mass and energy of ions, substrate orientation and temperature on the rate of generation of defects in silicon is investigated. Behaviour of defects of crystal lattice at thermal treatment is also studied. It is found that at Si irradiation with Sb ions the number of defects increases linearly with the dose and it reaches a saturation at about 1OL4ion/cm2. At high doses full amorphization of films occurs what results in an increase of electrical resistance by 6 orders of magnitude in comparison with nonirradiated silicon. A relation between the amorphization dose and atomic number of implanted ions is found. TKe profiles of distribution of Sb ions with energies of 50,200 and 400 keV imolanted in silicon are presented. The in&ence of channeling effects on radiation defects is considered. M Schenk, Proc Int Work Conf on Zon Implant in Semicon, 1972, 3344.
399. Backscattering Backscattering
Rossendorf
1972,111-112.
400. Calculation
16 of electronic energy losses in amorphous materials.
(Germany) Phenomena taking place at irradiation of amorphous materials by atoms and ions are considered. A semiclassical theory of energy losses of penetrating particles due to interaction with electron shells of target atoms is presented which gives results in agreement with experimental data in the whole energy range. K Gartner and K Hehl, Proc Znt Work Conf on Zon Implant in Semicon, Rossendorf 1972, 131-149 (in German). 401. Intluence of preliminary ion implantation. (Germany)
bombardment
16 on properties of silicon at
Influence of preliminary ion bombardment on distribution and electrical activity of implanted impurities is investigated. Using the activation method, it is shown that at irradiation by argon ions of silicon film with implanted phosphorus ions, the phosphorus distribution considerably changes due to radiation-stimulated diffusion. Preliminary bombardment of silicon by argon ions negatively influences electrical activity of implanted phosphorus. I Gulai et al, Proc Znt Work Conf on Ion Implant in Semicon, Rossendorf 1972, 191-196 (in Russian). 16 402. Investigation of results of implantation of p-type single silicon crystals by phosphorus ions with energy up to 50 keV. (Germany)
Using an electromagnetic mass separator, phosphorus ions with energy up to 50 keV were implanted in p-type single crystal silicon. Annealing of implanted semiconductor is necessary for stabilization of its electrical properties. V Zhuk et al, Proc Znt Work Conf on Ion Implant in Semicon, Rossendorf 1972, 197-200 (in Russian). 403. On nature of surface states on atomically silicon surfaces. (USSR)
clean germanium
16 and
Using the method of electron paramagnetic resonance and the adsorption method, atomically clean Ge and Si surfaces are investigated. Conditions of formation of radicals on these surfaces are found. Nature of surface states on atomically clean Ge and Si surfaces is discussed. G B Demidovich and V F Kiselev, Vestn Mosk Univers Fiz Astronom, 14 (2), 1973, 158-165
(in Russian). 16
397. Surface effects on silicon single crystals. (Germany)
398. Radiation damage annealing. (Germany)
surface is determined. No traces of nitrogen on silicon surface have been found. L Keszthelyi et al, Proc Znt Work Conf on Zon Implant in Semicon,
Rossendorf
16
investigations on silicon. (Germany) of 3 MeV alpha-particles from single crystal silicon
surface is investigated. A surface-barrier detector is used for measurement of backscattered particles. The quantity of oxygen on silicon
404. On charging of thermally oxidized germanium surface. (USSR)
The influence of adsorption of para-benzoquinone and water vapours at pressures of 10-l torr on thermally oxidized germanium surface on electro-physical properties of surface is investigated. I K Kashkarov et al, Fiz Tekh Polup, 7 (7), 1973, 1443-1445 (in Russian). 405. On regularities into solids. (USSR)
of penetration
16 of medium energy electron beams
The results of investigation of integral characteristics of transmission, reflection and absorption of electrons with initial energies of 0.5 to 4 keV in thin films of Al, Be, Ge, Cu and Ag are presented. The experiments were carried out in vacuum of 5 x 10m8 to lo-’ torr at conditions of oil-free pumping. Empirical regularities of transmission and reflection of electrons as functions of film thickness and electron initial energy are given. Transversal ranges of electrons are determined. A correlation between transmission and reflection is found. A Ya Vyatskin et al, Radiotekh Elektron, 18 (8), 1973, 1701-1705 (in Russian). 406.
Displacement
mechanisms
in electron-irradiated
16 molybdenum.
(Germany) The displacement mechanisms in 0.8 to 1.7 MeV electron-irradiated molybdenum are investigated. The MO specimens were annealed for 10 h in a vacuum of 5 x lo-* torr at temperatures above 2000°C before irradiation. (France) R Rizk et al, Phys Stat Sol (a), 18 (I), 1973, 241-246. 221
abstracts
392-406
392. Adsorption of nitrogen and argon on CaA previous sorption of ammonia. (USSR)
zeolite moditied
16 by
Adsorption of N, and Ar at temperature 78°K on CaA zeolite modified by previous adsorption of ammonia is investigated in the pressure tange 1 x 1O-5 to 100 torr. Adsorption ability of modified zeolite is reduced due to partial filling of adsorption space by ammonia. V M Lunev and V S Kogan, Probl Atomic Sci Technol, Coil, Kharkov 1971, 95-98 (in Russian). 16 393. Dependence of sorption kinetics on the degree of black of cooling surface. (USSR)
The influence of thickness of adsorbent layer and the degree of black of surface of vessel with cooling agent on sorption kinetics and attained pressure is investigated. Blackening of surface of vessel with cooling agent lowers the attained pressure by a half of order of magnitude. V I Kupriyanov et al, Probl Atomic 98-101 (in Russian). 394. Application of ion implantation semiconductor. (Germany)
Sri Technol,
CON, Kharkov
1971,
16 for preparation of contacts metal-
It is shown that uniform and low-resistance contacts to GaAs can be prepared by implantation of Ge, Sn, Ag, Zn, Ni and Cd ions with energies of 5 to 60 keV. W Rosinski, Proc Int Work Conf on Ion Implant in Semicon, dorf 1972, 201-204 (in Russian). 395. Utilization of the method of oxidizing melting determination of carbon in metals and investigation contamination of tantalum foils. (USSR)
Rossen-
16 in vacuum for of sources of
Utilization of the method of oxidizing melting in vacuum for determination of carbon content in niobium and tantalum is investigated. K Yu Natanson et al, Scient Rep of Design Inst of Rare Metal Industry, No 47, 1973, 180-190
(in Russian).
396. Preparation of p-n junctions bombardment. (USSR)
in silicon carbide
by lithium
16 ion
Using the method of implantation of lithium ions with energy 30 keV, electron-hole junctions have been obtained in silicon carbide OJ hexagonal modification. The penetration depth of 30 keV ions in Sic is 0.5 to 0.6 pm. Characteristics of the prepared p-n junctions were investigated. Sh A Mirsagatov et al, Izv AN 1973, 374 (in Russian).
Uz SSR
Ser Fiz Mat
Nauk,
No 2, 16
Surface structure of silicon single crystals is investigated after diffusion of impurities and thermal treatment in vacuum 10m5 torr and argon ambient. Experimental results are discussed. L Kohler and B Rausch, Krist und Techn, 7 (1 l), 1972, 1219-1224 (in German). in silicon caused by ion implantation
16 and its
Influence of irradiation dose, mass and energy of ions, substrate orientation and temperature on the rate of generation of defects in silicon is investigated. Behaviour of defects of crystal lattice at thermal treatment is also studied. It is found that at Si irradiation with Sb ions the number of defects increases linearly with the dose and it reaches a saturation at about 1OL4ion/cm2. At high doses full amorphization of films occurs what results in an increase of electrical resistance by 6 orders of magnitude in comparison with nonirradiated silicon. A relation between the amorphization dose and atomic number of implanted ions is found. TKe profiles of distribution of Sb ions with energies of 50,200 and 400 keV imolanted in silicon are presented. The in&ence of channeling effects on radiation defects is considered. M Schenk, Proc Int Work Conf on Zon Implant in Semicon, 1972, 3344.
399. Backscattering Backscattering
Rossendorf
1972,111-112.
400. Calculation
16 of electronic energy losses in amorphous materials.
(Germany) Phenomena taking place at irradiation of amorphous materials by atoms and ions are considered. A semiclassical theory of energy losses of penetrating particles due to interaction with electron shells of target atoms is presented which gives results in agreement with experimental data in the whole energy range. K Gartner and K Hehl, Proc Znt Work Conf on Zon Implant in Semicon, Rossendorf 1972, 131-149 (in German). 401. Intluence of preliminary ion implantation. (Germany)
bombardment
16 on properties of silicon at
Influence of preliminary ion bombardment on distribution and electrical activity of implanted impurities is investigated. Using the activation method, it is shown that at irradiation by argon ions of silicon film with implanted phosphorus ions, the phosphorus distribution considerably changes due to radiation-stimulated diffusion. Preliminary bombardment of silicon by argon ions negatively influences electrical activity of implanted phosphorus. I Gulai et al, Proc Znt Work Conf on Ion Implant in Semicon, Rossendorf 1972, 191-196 (in Russian). 16 402. Investigation of results of implantation of p-type single silicon crystals by phosphorus ions with energy up to 50 keV. (Germany)
Using an electromagnetic mass separator, phosphorus ions with energy up to 50 keV were implanted in p-type single crystal silicon. Annealing of implanted semiconductor is necessary for stabilization of its electrical properties. V Zhuk et al, Proc Znt Work Conf on Ion Implant in Semicon, Rossendorf 1972, 197-200 (in Russian). 403. On nature of surface states on atomically silicon surfaces. (USSR)
clean germanium
16 and
Using the method of electron paramagnetic resonance and the adsorption method, atomically clean Ge and Si surfaces are investigated. Conditions of formation of radicals on these surfaces are found. Nature of surface states on atomically clean Ge and Si surfaces is discussed. G B Demidovich and V F Kiselev, Vestn Mosk Univers Fiz Astronom, 14 (2), 1973, 158-165
(in Russian). 16
397. Surface effects on silicon single crystals. (Germany)
398. Radiation damage annealing. (Germany)
surface is determined. No traces of nitrogen on silicon surface have been found. L Keszthelyi et al, Proc Znt Work Conf on Zon Implant in Semicon,
Rossendorf
16
investigations on silicon. (Germany) of 3 MeV alpha-particles from single crystal silicon
surface is investigated. A surface-barrier detector is used for measurement of backscattered particles. The quantity of oxygen on silicon
404. On charging of thermally oxidized germanium surface. (USSR)
The influence of adsorption of para-benzoquinone and water vapours at pressures of 10-l torr on thermally oxidized germanium surface on electro-physical properties of surface is investigated. I K Kashkarov et al, Fiz Tekh Polup, 7 (7), 1973, 1443-1445 (in Russian). 405. On regularities into solids. (USSR)
of penetration
16 of medium energy electron beams
The results of investigation of integral characteristics of transmission, reflection and absorption of electrons with initial energies of 0.5 to 4 keV in thin films of Al, Be, Ge, Cu and Ag are presented. The experiments were carried out in vacuum of 5 x 10m8 to lo-’ torr at conditions of oil-free pumping. Empirical regularities of transmission and reflection of electrons as functions of film thickness and electron initial energy are given. Transversal ranges of electrons are determined. A correlation between transmission and reflection is found. A Ya Vyatskin et al, Radiotekh Elektron, 18 (8), 1973, 1701-1705 (in Russian). 406.
Displacement
mechanisms
in electron-irradiated
16 molybdenum.
(Germany) The displacement mechanisms in 0.8 to 1.7 MeV electron-irradiated molybdenum are investigated. The MO specimens were annealed for 10 h in a vacuum of 5 x lo-* torr at temperatures above 2000°C before irradiation. (France) R Rizk et al, Phys Stat Sol (a), 18 (I), 1973, 241-246. 221