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4378260 Process for producing a semiconductor device
1190
New Patents
ergy which is provided at output terminals of the protective circuit may be advantageously returned to the voltage supply so as to reduce to a minimum the electrical energy dissipated in the protective circuit, or alternatively, such energy may be available for any desired use, illustratively, as an auxiliary power supply.
4378383
M E T H O D OF MAKING CONDUCTIVE PATHS T H R O U G H A LAMINA IN A S E M I C O N D U C T O R DEVICE Holge Moritz assigned to International Business Machines Corporation +2
~12
On the layer 12 a mask 3 corresponding to the desired pattern of holes 15 is provided with via openings 14 having overhanging walls. The layer 12 is selectively etched with a method where the etching attack takes place vertically to the layer surface, and wherein the mask 3 is thinned simultaneously, so that holes 15 are obtained having a cross-section increasing toward the mask 3. If subsequently material 16 for filling the holes 15 is applied in a blanket deposition these holes are completely filled when the material 16 has the same thickness as the layer 12 although the openings over the holes are decreasing with increasing thickness of the material 16. The layer 12 consists preferably of an insulation material, the mask 3 of positive photoresist, and the material 16 of a metal. 4378260 PROCESS FOR P R O D U C I N G A S E M I C O N D U C T O R DEVICE Takeshi Fukuda; Yoshita Ichinose assigned to Fujitsu Limited PCT No. PCT/JP80/00107 Sec. 371 Date Jan. 18, 1981 Sec. 102(e)Date Jan. 12,
1981 P C T Filed May 17, 1980 PCT Pub. No. WO80/02623 P C T Pub. Date Nov. 27, 1980. A process for producing a semiconductor device and for minimizing the effects of implanted boron on a silicon dioxide insulator layer is presented. The process includes the using of a silicon nitride film having windows to define the regions of a semiconductor device, such as a bipolar transistor and isolation regions wherein the isolatoin region and the semiconductor regions are formed by thermal diffusion of boron using a selfalignment production process. A first mask of the silicon nitride film is formed by patterning its in the form of an endless stripe so that the influence of the reaction between the boron and silicon nitride upon the silicon nitride film is considerably reduced as compared with the conventional process. As a result, the problem of low production yield and low reliability of the semiconductor device is solved.
4378255 M E T H O D FOR P R O D U C I N G INTEGRATED SEMICONDUCTOR LIGHT EMITTER Nick Holonyak; Wyn D Laidig assigned to University of Illinois Foundation
A multilayer, III-V semiconductive structure can be disordered and shifted up in energy gap into a single crystalline form by a Zinc diffusion. More specifically, all or selected portions of a multilayer of either gallium arsenide/aluminum arsenide or gallium arsenide/aluminum gallium arsenide can be converted into single crystal aluminum gallium arsenide having a higher energy gap than that of the original structure by the process of a Zinc diffusion at low temperature. Other active devices can then be constructed in the higher energy gap material using established semiconductor processing steps.
New Patents
ergy which is provided at output terminals of the protective circuit may be advantageously returned to the voltage supply so as to reduce to a minimum the electrical energy dissipated in the protective circuit, or alternatively, such energy may be available for any desired use, illustratively, as an auxiliary power supply.
4378383
M E T H O D OF MAKING CONDUCTIVE PATHS T H R O U G H A LAMINA IN A S E M I C O N D U C T O R DEVICE Holge Moritz assigned to International Business Machines Corporation +2
~12
On the layer 12 a mask 3 corresponding to the desired pattern of holes 15 is provided with via openings 14 having overhanging walls. The layer 12 is selectively etched with a method where the etching attack takes place vertically to the layer surface, and wherein the mask 3 is thinned simultaneously, so that holes 15 are obtained having a cross-section increasing toward the mask 3. If subsequently material 16 for filling the holes 15 is applied in a blanket deposition these holes are completely filled when the material 16 has the same thickness as the layer 12 although the openings over the holes are decreasing with increasing thickness of the material 16. The layer 12 consists preferably of an insulation material, the mask 3 of positive photoresist, and the material 16 of a metal. 4378260 PROCESS FOR P R O D U C I N G A S E M I C O N D U C T O R DEVICE Takeshi Fukuda; Yoshita Ichinose assigned to Fujitsu Limited PCT No. PCT/JP80/00107 Sec. 371 Date Jan. 18, 1981 Sec. 102(e)Date Jan. 12,
1981 P C T Filed May 17, 1980 PCT Pub. No. WO80/02623 P C T Pub. Date Nov. 27, 1980. A process for producing a semiconductor device and for minimizing the effects of implanted boron on a silicon dioxide insulator layer is presented. The process includes the using of a silicon nitride film having windows to define the regions of a semiconductor device, such as a bipolar transistor and isolation regions wherein the isolatoin region and the semiconductor regions are formed by thermal diffusion of boron using a selfalignment production process. A first mask of the silicon nitride film is formed by patterning its in the form of an endless stripe so that the influence of the reaction between the boron and silicon nitride upon the silicon nitride film is considerably reduced as compared with the conventional process. As a result, the problem of low production yield and low reliability of the semiconductor device is solved.
4378255 M E T H O D FOR P R O D U C I N G INTEGRATED SEMICONDUCTOR LIGHT EMITTER Nick Holonyak; Wyn D Laidig assigned to University of Illinois Foundation
A multilayer, III-V semiconductive structure can be disordered and shifted up in energy gap into a single crystalline form by a Zinc diffusion. More specifically, all or selected portions of a multilayer of either gallium arsenide/aluminum arsenide or gallium arsenide/aluminum gallium arsenide can be converted into single crystal aluminum gallium arsenide having a higher energy gap than that of the original structure by the process of a Zinc diffusion at low temperature. Other active devices can then be constructed in the higher energy gap material using established semiconductor processing steps.