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444. Characteristics of thin films of the In-Te system in the range 50–60 per cent Te
Classified
abstracts
423-444
of silicon from the solid state onto Si substrates kept at lOOO”-I 250’. The rate of growth was 3-20 p/hr.
evaporation
V V Postnikov Russian)
et al, Krictallografia,
IO (4),
1965.
585-586.
(in
30 423. Photoemission from amorphous and metallic selenium in the vacuum UV. (USA) W Pong and R A Norris, J Opt Sot Amer, 55, 1965. 118%1190, (Hawaii) 30 (USA) 424. Solid thin film research.
Survey of the present stage of development in thin film research. Some uses, both electronic and optical, for thin films are discussed. Vacuum deposition and sputtering as ways of obtaining thin films are described. Anon, In&st
Research.
7, 1965,54-j&
60,62,64,
66.
30 425. Orientation and thickness dependence of stress-strain curves in vacuum-deposited single crystal silver films. I LISAI M Fukamachi et al, Acta Metallurgica, 14 (I), Jan 1966, 62-63, (from Japan). 30 426. The adsorption of argon ions by titanium films. (USSR)
The adsorption of argon ions with energies of 600-4000 eV on Ti films was investigated. The apparatus consists of a stainless steel vacuum chamber of volume about I5 litres evacuated by oil diffusion and getter-ion pumps. It is shown that the Ti films produced by vacuum evaporation adsorb only ionized argon. G F Ivanovskii and T D Radzhabov, Z/I Tekh Fiz, 35 (7)) 1965, 13/21318. 30 427. Procedure for the measurement of thickness of transparent thin films during evaporation. (‘Germatly) K Wobek and H J Schmidt, Z Angew Phys, 19 (2)) 1965,144-146.
30 428. Surface phenomena in vacuum systems. I C;cchos/ovakia) A survey of the basic processes taking place on the inner surface of vacuum systems. L Pat?, Ce.tk0.r Catopis
F),.\, IS (4)
, 1965. 36&386A,
(in Czech).
429. Solar absorptance and thermal emittance of aluminium with surface films of evaporated aluminium oxide. (USA)
30 coated
Development of a technique for producing undecomposcd films by hi!:h vacuum evaporation with an electron gun.
AI,O,
G Hass and J B Ramsey, AIAA Mourerev, Calif, Sepf 1965, 8 paxes.
Con/;
Ther~rrop,l,ll_v.sSpecialist
of sources by vacuum evaporation.
f China)
Chinese). 30
of silicon monoxide
on an evaporated
metal surface.
f USA)
The rate of condensation of silicon monoxide molecular beam on a tin surface has been measured as a function of condensate thickness. The sticking coefficient defined as that fraction of the impinging molecules which condense on the surface was constant on surfaces freshly evaporated in ultrahigh vacuum. I Hailer and P White, Condensation and Evaporalion of Solids, Gordon and Breach,
(New
York andLondon),
1965,631-637.
30 growth of evaporated cobalt films. (USA) The characteristics of cobalt films of initial purity 99.91 and 99.999 432. Epitaxial
per cent prepared wele studied.
by vacuum evaporation
T Honma and C M Wayman,
on various substrates
J Appl Phys, 36 (9), 1965,2791-2798.
30 433. Continuous metal films.
electron (USA)
microscope
study
evaporation
by
of vacuum-evaporated
Vacuum-evaporated metal films have been prepared inside an electron microscope. A high mobility of the deposit is a characteristic feature of the growth mechanism of both crystalline films on
vacuum
30 co-
Thin films of IIB-VIA compound semiconductors have been formed by the simultaneous vacuum evaporation of the constituent elements onto a heated substrate. The apparatus and instrumentation used to obtain controlled evaporation rates of the elements is described. E R Hill, Condensation and Evaporation Breach (New York and London), 1965,707.
Gordon
of Solids,
and
30 435. Devitrification of tin oxide films prepared by reactive sputtering. (USA) W R Sinclair et al, J Elcctrochern Sot, 112 (II), 1965,1096-1100. 30 (USA) 436. Vacuum helps spin form thin skins. J Koberlein, Tool and Mannf Eng. 55, 1965.28-29. 30 (USA) 437. Growth of thin metal films under applied electric field.
The films of gold, silver and copper were prepared by evaporation of high purity 99.999 per cent from a tungsten filament at a temperature of about I IOO-1200°C in a vacuum of about lo-” torr. K L Chopra, Appl Phys Letters.
7 (5)) 1965.140-142.
30 438. Vacuum evaporator with an improved electron bombardment heating unit. (Japan) H Tamura and H Kimura, Jap J ApplPhys, 4,1965,622-623. 30 (France) 439. Resistors and capacitors in tantalum thin films.
Review of tantalum layers. M Kleefstra,
cathode sputtering
Ann de RadioPlectricitP.
and the properties
of thin
20, July 1965, 233-245,
(in
/+erich)
440. Evaporation
and nucleation
in evaporated
alloy films.
30:41 (USA)
Evaporation of a Ni-Cr-Cu-Al alloy in vacuum was investigated by an electron diffraction study of deposits formed on glass substrates. The initial vapour was found to be rich in Cr and Al as was anticipated on theoretical grounds. C W Lewis and M Schick, Condensation and Evaporation of Solids,
441. High-rate (USA)
vacuum
York and London), evaporation
1965,699-705.
by electron
beam
Some of the practical aspects of high-rate evaporation
Thin and uniform sources are always needed in B-ray soectroscoov. For this purpose an apparatus for iacuum evaporation was designed by means of which sources such as In”‘, ALI’“~and SrnlsJ have been prepared. Su Hong-yuan et al, Acta Ph.v.\ Sinica, 21 (3)) 1965, 526-530, (in
431. Nucleation
434. Compound semiconductor film (USA) evaporation of constituents.
Gordon and Breach (New
30 430. The preparation
amorphous carbon substrates and of single crystal epitaxial films deposited on molybdenum disutphide. G H Bassett, Condensa,ion and Evaporalion of Solid.s, Gordon and Breach (.Ye\l, )‘ork andlorldon) , 1965,599-617.
30 : 33 techniques.
are outlined.
H R Smith, Mater Sci Technol Appl, 2,1964,569-578. 30 442. Ion-beam deposition
of metal films.
: 33
(USA)
Description of experimental studies of ion-beam deposition of thin films. The potential of the method for maskless deposition of microelectronic circuits is considered, design of a deposition device is presented and some properties of Ag, Cu, and Cr films are examined. A R Walter, Molecular Concepts Microelectronics Symp, St Louis, Electronic Eng ZA-1 to 2A-8,1965.
in Microelectronics, Miss, May 1965,
4th Proc of Inst Elec and
30 : 41 443. Effect of the conditions of preparation of the substrates on the quality of epitaxial films of germanium in the chloride method. (USSR)
The effect of the preparatory treatment of substrates on the perfection of epitaxial germanium films subsequently grown on these was examined. Preliminary treatment of the substrates in hydrogen at 850°C had a beneficial effect on growth, the best period of treatment being 40 min. By etching the substrates in a mixture of hydrogen chloride and hydrogen under polishing conditions, mirrorsmooth films devoid of all stacking faults were obtained. V S Krvachenko et al, Symposium on rhe Synthesis and Growth of Crystals and Semiconducting Films. II-16 October 1965, Summaries of Contribarions, 1965, (in Russian). 30 : 41 444. Characteristics of thin films of the In-Te system in the range (USSR) SO-60 per cent Te.
The phase composition
of thin films in the In-Te system obtained by 155
abstracts
423-444
of silicon from the solid state onto Si substrates kept at lOOO”-I 250’. The rate of growth was 3-20 p/hr.
evaporation
V V Postnikov Russian)
et al, Krictallografia,
IO (4),
1965.
585-586.
(in
30 423. Photoemission from amorphous and metallic selenium in the vacuum UV. (USA) W Pong and R A Norris, J Opt Sot Amer, 55, 1965. 118%1190, (Hawaii) 30 (USA) 424. Solid thin film research.
Survey of the present stage of development in thin film research. Some uses, both electronic and optical, for thin films are discussed. Vacuum deposition and sputtering as ways of obtaining thin films are described. Anon, In&st
Research.
7, 1965,54-j&
60,62,64,
66.
30 425. Orientation and thickness dependence of stress-strain curves in vacuum-deposited single crystal silver films. I LISAI M Fukamachi et al, Acta Metallurgica, 14 (I), Jan 1966, 62-63, (from Japan). 30 426. The adsorption of argon ions by titanium films. (USSR)
The adsorption of argon ions with energies of 600-4000 eV on Ti films was investigated. The apparatus consists of a stainless steel vacuum chamber of volume about I5 litres evacuated by oil diffusion and getter-ion pumps. It is shown that the Ti films produced by vacuum evaporation adsorb only ionized argon. G F Ivanovskii and T D Radzhabov, Z/I Tekh Fiz, 35 (7)) 1965, 13/21318. 30 427. Procedure for the measurement of thickness of transparent thin films during evaporation. (‘Germatly) K Wobek and H J Schmidt, Z Angew Phys, 19 (2)) 1965,144-146.
30 428. Surface phenomena in vacuum systems. I C;cchos/ovakia) A survey of the basic processes taking place on the inner surface of vacuum systems. L Pat?, Ce.tk0.r Catopis
F),.\, IS (4)
, 1965. 36&386A,
(in Czech).
429. Solar absorptance and thermal emittance of aluminium with surface films of evaporated aluminium oxide. (USA)
30 coated
Development of a technique for producing undecomposcd films by hi!:h vacuum evaporation with an electron gun.
AI,O,
G Hass and J B Ramsey, AIAA Mourerev, Calif, Sepf 1965, 8 paxes.
Con/;
Ther~rrop,l,ll_v.sSpecialist
of sources by vacuum evaporation.
f China)
Chinese). 30
of silicon monoxide
on an evaporated
metal surface.
f USA)
The rate of condensation of silicon monoxide molecular beam on a tin surface has been measured as a function of condensate thickness. The sticking coefficient defined as that fraction of the impinging molecules which condense on the surface was constant on surfaces freshly evaporated in ultrahigh vacuum. I Hailer and P White, Condensation and Evaporalion of Solids, Gordon and Breach,
(New
York andLondon),
1965,631-637.
30 growth of evaporated cobalt films. (USA) The characteristics of cobalt films of initial purity 99.91 and 99.999 432. Epitaxial
per cent prepared wele studied.
by vacuum evaporation
T Honma and C M Wayman,
on various substrates
J Appl Phys, 36 (9), 1965,2791-2798.
30 433. Continuous metal films.
electron (USA)
microscope
study
evaporation
by
of vacuum-evaporated
Vacuum-evaporated metal films have been prepared inside an electron microscope. A high mobility of the deposit is a characteristic feature of the growth mechanism of both crystalline films on
vacuum
30 co-
Thin films of IIB-VIA compound semiconductors have been formed by the simultaneous vacuum evaporation of the constituent elements onto a heated substrate. The apparatus and instrumentation used to obtain controlled evaporation rates of the elements is described. E R Hill, Condensation and Evaporation Breach (New York and London), 1965,707.
Gordon
of Solids,
and
30 435. Devitrification of tin oxide films prepared by reactive sputtering. (USA) W R Sinclair et al, J Elcctrochern Sot, 112 (II), 1965,1096-1100. 30 (USA) 436. Vacuum helps spin form thin skins. J Koberlein, Tool and Mannf Eng. 55, 1965.28-29. 30 (USA) 437. Growth of thin metal films under applied electric field.
The films of gold, silver and copper were prepared by evaporation of high purity 99.999 per cent from a tungsten filament at a temperature of about I IOO-1200°C in a vacuum of about lo-” torr. K L Chopra, Appl Phys Letters.
7 (5)) 1965.140-142.
30 438. Vacuum evaporator with an improved electron bombardment heating unit. (Japan) H Tamura and H Kimura, Jap J ApplPhys, 4,1965,622-623. 30 (France) 439. Resistors and capacitors in tantalum thin films.
Review of tantalum layers. M Kleefstra,
cathode sputtering
Ann de RadioPlectricitP.
and the properties
of thin
20, July 1965, 233-245,
(in
/+erich)
440. Evaporation
and nucleation
in evaporated
alloy films.
30:41 (USA)
Evaporation of a Ni-Cr-Cu-Al alloy in vacuum was investigated by an electron diffraction study of deposits formed on glass substrates. The initial vapour was found to be rich in Cr and Al as was anticipated on theoretical grounds. C W Lewis and M Schick, Condensation and Evaporation of Solids,
441. High-rate (USA)
vacuum
York and London), evaporation
1965,699-705.
by electron
beam
Some of the practical aspects of high-rate evaporation
Thin and uniform sources are always needed in B-ray soectroscoov. For this purpose an apparatus for iacuum evaporation was designed by means of which sources such as In”‘, ALI’“~and SrnlsJ have been prepared. Su Hong-yuan et al, Acta Ph.v.\ Sinica, 21 (3)) 1965, 526-530, (in
431. Nucleation
434. Compound semiconductor film (USA) evaporation of constituents.
Gordon and Breach (New
30 430. The preparation
amorphous carbon substrates and of single crystal epitaxial films deposited on molybdenum disutphide. G H Bassett, Condensa,ion and Evaporalion of Solid.s, Gordon and Breach (.Ye\l, )‘ork andlorldon) , 1965,599-617.
30 : 33 techniques.
are outlined.
H R Smith, Mater Sci Technol Appl, 2,1964,569-578. 30 442. Ion-beam deposition
of metal films.
: 33
(USA)
Description of experimental studies of ion-beam deposition of thin films. The potential of the method for maskless deposition of microelectronic circuits is considered, design of a deposition device is presented and some properties of Ag, Cu, and Cr films are examined. A R Walter, Molecular Concepts Microelectronics Symp, St Louis, Electronic Eng ZA-1 to 2A-8,1965.
in Microelectronics, Miss, May 1965,
4th Proc of Inst Elec and
30 : 41 443. Effect of the conditions of preparation of the substrates on the quality of epitaxial films of germanium in the chloride method. (USSR)
The effect of the preparatory treatment of substrates on the perfection of epitaxial germanium films subsequently grown on these was examined. Preliminary treatment of the substrates in hydrogen at 850°C had a beneficial effect on growth, the best period of treatment being 40 min. By etching the substrates in a mixture of hydrogen chloride and hydrogen under polishing conditions, mirrorsmooth films devoid of all stacking faults were obtained. V S Krvachenko et al, Symposium on rhe Synthesis and Growth of Crystals and Semiconducting Films. II-16 October 1965, Summaries of Contribarions, 1965, (in Russian). 30 : 41 444. Characteristics of thin films of the In-Te system in the range (USSR) SO-60 per cent Te.
The phase composition
of thin films in the In-Te system obtained by 155