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500. The Kondo effect in surface-doped thin CuFe films
Classified abstracts
493-505
30 493. rf sputtered luminescent rare-earth oxysulfide films. (USA) Thin luminescent films of lanthanum and gadolinium oxvsulfide (REIOIS) were prepared by radio-frequency-sputtering in in ArH2S mixture. Small additions of Eu, Tb, or Tm produced red, green, or blue emissions, respectively. A luminance of 40,000 ftL from a La202S:Tb film was observed. The composition of the sputtered films was found to be very dependent upon the H,S pressure in the sputtering chamber. The film composition as a function of H,S pressure was determined and described. In order to achieve maximum luminescence, the films were treated in an H2-SO2 atmosphere at lOOO”C,and X-ray diffraction and luminous emission linewidths were observed to have decreased after treatment. Crystalline growth within the film and improved oxygen sulphur stoichiometry resulting from the treatment process are believed to be primarily responsible for the increase in luminous efficiency. The maximum luminous efficiency of the films was measured to be approximately l/l0 that of corresponding powder screens. Attempts to increase the film luminance by reducing the internal trapping of the radiation are discussed. T G Maple and R A Buchanan, J Yac Sci Tech&, 10 (5), 1973, 616 620. 30 494. Superconductivity of transition metal thin films deposited by noble gas ion beam sputtering. (USA)
Nobel gas ion beam sputtering techniques have been used to prepare thin films of several transition metals. Thin films of MO, Ti, W, and Zr metals have been found to be superconducting with transition temperatures substantially higher than those observed for the respective bulk metals. Cr thin films have been found to be superconducting for the first time. Ion beam sputtered thin films of Nb, Ru, Ta, and V metals were similarly deposited, resulting in decreases in r, compared with bulk values. In each case the transition temperatures were seen to depend on the noble gas used for deposition. The highest transition temperatures were obtained for those films deposited with xenon gas. Superconducting transition temperatures are correlated with the kind of gas used for deposition, the apparent particle size, and with changes in the size of the metal lattice. P H Schmidt, J Vuc Sci Technol, 10 (S), 1973, 611-615. 30 495. Tunneling studies of the formation of intermetallic compounds in gold-lead films. (USA) The possibility of forming the gold-lead intermetallic compounds AuZPb, AuPb2 and AuPbs in tunnel structures using thin films of aluminium, aluminium oxide, lead, and finally gold is being studied. The room temperature diffusion of gold into lead films with thickness in the range lOQ&3600 8, is found to be rapid, with indications of compound formation taking place within a few hours. Variation of the thickness ratio of the lead and gold films is used to preferentially form a given intermetallic. Each intermetallic is characterized by its transition temperature T,, energy gap d,, and by a unique phonon spectrum which is reflected in the derivatives of the tunneling characteristics. A F Hebard, J Yuc Sri Techno/, 10 (5), 1973, 606-610. 30 496. Superconductivity and metastable phases in thin films. (USA) Results on quenched condensed films of Bi, Sb, Sb + nobel metals, Ge, Ge + noble metals, and Sn + Cu are discussed in order to demonstrate the importance of the short-range order for the properties of such films. Two kinds of amorphous films can be clearly distinguished: (a) crystallinelike and (b) liquidlike amorphous films. This classification is important for materials which are oartiallv covalently bonded. The results also show than an interesting relation exists between metastable phases in quenched condensed films and high pressure modifications of the same material. (Germany) W Buckel, J Vuc Sri Techno/, 10 (5), 1973, 599-602.
30 498. Crystallization in aluminimn-silicon dioxide films. (Germany) Diffusion of aluminium from an aluminium film into SiO, at annealing is investigated in a vacuum furnace. The Al-SiO, double films have been prepared by electron-beam evaporation in vacuum lo-’ torr on NaCI cleavages. (France) J P Gauthier, Phys Stnt Sol (a), 18 (2), 1973, K61-K63 (in German). 30 499. Influence of X-ray irradiation on a phase transition in CsCl thin fdms. (Germany) Using the methods of differential thermal analysis and X-ray diffraction, the influence of X-ray irradiation on a phase transition is investigated in CsCl thin films prepared by vacuum evaporation on glass substrates. R P Forier et al, Phys Srur Sol (a), 18 (2), 1973, K69-K72. 30 500. The Kondo effect in surface-doped thin CuFe films. (Germany) Low-temperature resistance of thin copper films, prepared by vacuum condensation onto glass slide at room temperature, and surface doped with iron is studied. (USSR) V Yu Tarenkov et al, Phys Stat Sol (a), 18 (2), 1973, 439-442. 30 501. Electron microscopy of amorphous Gd-Co thin films. (Germany) Transmission electron microscopy and electron diffraction were used to study the structural changes in amorphous Gd-Co films with temperature while Lorentz microscopy was employed to reveal the related magnetic changes. The films were prepared by sputtering onto rocksalt substrates from which they were floated off onto conventional electron microscope support grids. Amorphous Gd-Co films in the composition range of 75 to 85 atomic per cent Co precipitate small face centered cubic Co crystals in an amorphous matrix after heating at 400°C. As deposited these films were found to contain stripe as well as in-plane domain structures. Magnetic bubbles as small as 800 A could be generated in as deposited amorphous as well as partially crystallized films. In films with less than 79 atomic per cent Co the magnetic compensation point was demonstrated by a reversible reversal of domain contrast with temperature. (USA) S R Herd and P Chaudbari, Phys Stat Sol (a), 18 (2), 1973, 603-611. 30 502. Investigations
on determination of charge carrier concentration and mobility in implanted films. (Germany)
Using the measurements of resistivity and Hall coefficient concentration and mobility of charge carriers in silicon films with implanted P and B ions are investiaged. F Burkbardt et al. Proc Int Work Conf on Ion ImPlant in Semicon, Rossendorf 1972, i73-181 (in German).s 503. Iop diffraction (Germany)
investigations
of silicon and gold epitaxial
30 films.
Using the methods of diffraction and back-scattering of protons and helium ions with energy 1.4 MeV the perfectness degree of structure of epitaxial Si films on Si and Au films on NaCl is investigated. G Gotz et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 972, 1105-l 10 (in German). 504. Distribution of phosphorus chloride method. (USSR)
in epitaxial
30 silicon films grown by
Distribution of phosphorus is investigated in epitaxial silicon films, grown from gas flow of hydrogen-silicon tetrachloride-phosphorus trichlolide. It is found that phosphorus is uniformly trapped in growing Si. I B Sladkov et al, Mikroelektronika,
2 (3), 1973, 273-275
(in Russian).
30 of ionized states of adenine in the solid
30 505. Conditions leading to the appearance of the new modification (delta-Cr) in thin vacuum evaporated chromium films. I. (Roumania)
The quantum yield of photoemission and the relative Quantum efficiency of photoconductivity of vacuum deposited films of adenine (CSNSH,) and permittivity of adenine in the solid state were studied in order to determine the klectron energy structure. The thin films of adenine were prepared by evaporation in vacuum 10m6 torr. E Subertova et al, Phys Stat SoI (a), 18 (2), 1973, 741-747.
Using the method of electron diffraction, a new cubic modification of chromium (delta-Cr) has been found in thin chromium films evaporated in vacuum on freshly cleaved NaCl and KCI. The influence of film thickness on formation of the new Cr phase is studied. M I Birjega et al, Rev Romu P&s, 18 (2), 1973, 211-217.
497. Energy level structure state. (Germany)
229
493-505
30 493. rf sputtered luminescent rare-earth oxysulfide films. (USA) Thin luminescent films of lanthanum and gadolinium oxvsulfide (REIOIS) were prepared by radio-frequency-sputtering in in ArH2S mixture. Small additions of Eu, Tb, or Tm produced red, green, or blue emissions, respectively. A luminance of 40,000 ftL from a La202S:Tb film was observed. The composition of the sputtered films was found to be very dependent upon the H,S pressure in the sputtering chamber. The film composition as a function of H,S pressure was determined and described. In order to achieve maximum luminescence, the films were treated in an H2-SO2 atmosphere at lOOO”C,and X-ray diffraction and luminous emission linewidths were observed to have decreased after treatment. Crystalline growth within the film and improved oxygen sulphur stoichiometry resulting from the treatment process are believed to be primarily responsible for the increase in luminous efficiency. The maximum luminous efficiency of the films was measured to be approximately l/l0 that of corresponding powder screens. Attempts to increase the film luminance by reducing the internal trapping of the radiation are discussed. T G Maple and R A Buchanan, J Yac Sci Tech&, 10 (5), 1973, 616 620. 30 494. Superconductivity of transition metal thin films deposited by noble gas ion beam sputtering. (USA)
Nobel gas ion beam sputtering techniques have been used to prepare thin films of several transition metals. Thin films of MO, Ti, W, and Zr metals have been found to be superconducting with transition temperatures substantially higher than those observed for the respective bulk metals. Cr thin films have been found to be superconducting for the first time. Ion beam sputtered thin films of Nb, Ru, Ta, and V metals were similarly deposited, resulting in decreases in r, compared with bulk values. In each case the transition temperatures were seen to depend on the noble gas used for deposition. The highest transition temperatures were obtained for those films deposited with xenon gas. Superconducting transition temperatures are correlated with the kind of gas used for deposition, the apparent particle size, and with changes in the size of the metal lattice. P H Schmidt, J Vuc Sci Technol, 10 (S), 1973, 611-615. 30 495. Tunneling studies of the formation of intermetallic compounds in gold-lead films. (USA) The possibility of forming the gold-lead intermetallic compounds AuZPb, AuPb2 and AuPbs in tunnel structures using thin films of aluminium, aluminium oxide, lead, and finally gold is being studied. The room temperature diffusion of gold into lead films with thickness in the range lOQ&3600 8, is found to be rapid, with indications of compound formation taking place within a few hours. Variation of the thickness ratio of the lead and gold films is used to preferentially form a given intermetallic. Each intermetallic is characterized by its transition temperature T,, energy gap d,, and by a unique phonon spectrum which is reflected in the derivatives of the tunneling characteristics. A F Hebard, J Yuc Sri Techno/, 10 (5), 1973, 606-610. 30 496. Superconductivity and metastable phases in thin films. (USA) Results on quenched condensed films of Bi, Sb, Sb + nobel metals, Ge, Ge + noble metals, and Sn + Cu are discussed in order to demonstrate the importance of the short-range order for the properties of such films. Two kinds of amorphous films can be clearly distinguished: (a) crystallinelike and (b) liquidlike amorphous films. This classification is important for materials which are oartiallv covalently bonded. The results also show than an interesting relation exists between metastable phases in quenched condensed films and high pressure modifications of the same material. (Germany) W Buckel, J Vuc Sri Techno/, 10 (5), 1973, 599-602.
30 498. Crystallization in aluminimn-silicon dioxide films. (Germany) Diffusion of aluminium from an aluminium film into SiO, at annealing is investigated in a vacuum furnace. The Al-SiO, double films have been prepared by electron-beam evaporation in vacuum lo-’ torr on NaCI cleavages. (France) J P Gauthier, Phys Stnt Sol (a), 18 (2), 1973, K61-K63 (in German). 30 499. Influence of X-ray irradiation on a phase transition in CsCl thin fdms. (Germany) Using the methods of differential thermal analysis and X-ray diffraction, the influence of X-ray irradiation on a phase transition is investigated in CsCl thin films prepared by vacuum evaporation on glass substrates. R P Forier et al, Phys Srur Sol (a), 18 (2), 1973, K69-K72. 30 500. The Kondo effect in surface-doped thin CuFe films. (Germany) Low-temperature resistance of thin copper films, prepared by vacuum condensation onto glass slide at room temperature, and surface doped with iron is studied. (USSR) V Yu Tarenkov et al, Phys Stat Sol (a), 18 (2), 1973, 439-442. 30 501. Electron microscopy of amorphous Gd-Co thin films. (Germany) Transmission electron microscopy and electron diffraction were used to study the structural changes in amorphous Gd-Co films with temperature while Lorentz microscopy was employed to reveal the related magnetic changes. The films were prepared by sputtering onto rocksalt substrates from which they were floated off onto conventional electron microscope support grids. Amorphous Gd-Co films in the composition range of 75 to 85 atomic per cent Co precipitate small face centered cubic Co crystals in an amorphous matrix after heating at 400°C. As deposited these films were found to contain stripe as well as in-plane domain structures. Magnetic bubbles as small as 800 A could be generated in as deposited amorphous as well as partially crystallized films. In films with less than 79 atomic per cent Co the magnetic compensation point was demonstrated by a reversible reversal of domain contrast with temperature. (USA) S R Herd and P Chaudbari, Phys Stat Sol (a), 18 (2), 1973, 603-611. 30 502. Investigations
on determination of charge carrier concentration and mobility in implanted films. (Germany)
Using the measurements of resistivity and Hall coefficient concentration and mobility of charge carriers in silicon films with implanted P and B ions are investiaged. F Burkbardt et al. Proc Int Work Conf on Ion ImPlant in Semicon, Rossendorf 1972, i73-181 (in German).s 503. Iop diffraction (Germany)
investigations
of silicon and gold epitaxial
30 films.
Using the methods of diffraction and back-scattering of protons and helium ions with energy 1.4 MeV the perfectness degree of structure of epitaxial Si films on Si and Au films on NaCl is investigated. G Gotz et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 972, 1105-l 10 (in German). 504. Distribution of phosphorus chloride method. (USSR)
in epitaxial
30 silicon films grown by
Distribution of phosphorus is investigated in epitaxial silicon films, grown from gas flow of hydrogen-silicon tetrachloride-phosphorus trichlolide. It is found that phosphorus is uniformly trapped in growing Si. I B Sladkov et al, Mikroelektronika,
2 (3), 1973, 273-275
(in Russian).
30 of ionized states of adenine in the solid
30 505. Conditions leading to the appearance of the new modification (delta-Cr) in thin vacuum evaporated chromium films. I. (Roumania)
The quantum yield of photoemission and the relative Quantum efficiency of photoconductivity of vacuum deposited films of adenine (CSNSH,) and permittivity of adenine in the solid state were studied in order to determine the klectron energy structure. The thin films of adenine were prepared by evaporation in vacuum 10m6 torr. E Subertova et al, Phys Stat SoI (a), 18 (2), 1973, 741-747.
Using the method of electron diffraction, a new cubic modification of chromium (delta-Cr) has been found in thin chromium films evaporated in vacuum on freshly cleaved NaCl and KCI. The influence of film thickness on formation of the new Cr phase is studied. M I Birjega et al, Rev Romu P&s, 18 (2), 1973, 211-217.
497. Energy level structure state. (Germany)
229