507. Structural investigations of thermally treated uranium dioxide thin films deposited by ion beam sputtering technique

Classified

abstracts

506-522

30 506. Conditions -leading to the appearance of the new modification (delta-Cr) in thin vacuum evaporated chromium films. II. (Roumania)

It is found that formation of the new modification (delta-Cr) in thin vacuum evaporated chromium films depends on nature of substrate, defects of substrate, substrate temperature and deposition rate. .V Topa et al, Rev Roum Phys, 18 (2), 1973, 219-223. 30 507. Structural

investigations of thermally treated uranium dioxide thin films deposited by ion beam sputtering technique. (Roumania)

Thin UO, films on NaCl and KC1 substrates have been prepared by sputtering of sintered UO, by 15 keV argon ions. The prepared films were annealed in vacuum 2 x 10m6 torr. In the temperature interval 200 to 400°C the films remain amorphous, at 400 to 600°C a transformation into polycrystalline state is observed and at 700 to 800°C an orientation is formed. At 900°C single crystal films are formed. At 1000°C the modification gamma-U409 is observed. F Vasiliu and F Glodeanu, Rev Roum Phys, 18 (l), 1973, 3-7. 30 508. Investigation of radiation defects in implanted silicon films. (Germany) Using the method of back-scattering of 2 MeV protons and helium ions, radiation defects in implanted silicon films are investigated. Back-scattered particles were detected with a semiconductor detector. SiO, films with onticallv determined thickness were used for calibration of the ion scattering method. G Goetz et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 1972, 95-100 (in Russian). 30:33 509. Equipment for the preparation of thin carbon foils and replicas. (Czechoslovakia) An equipment for the preparation of thin carbon foils and replicas for electron microscopical investigations is described. The equipment is placed inside a glass bell jar evaucated to 10M5 torr. B Flajzar, Czech J Phys, A 22 (S), 1972, 468-469 (in Czech). 30 510. Modulation of conductivity piezoeffect in substrate. (USSR)

of island gold films at the inverse

Possibility of modulation of electrical conductivity is shown in island gold films, deposited by evaporation in vacuum of 10m6 torr on dielectric films covering ferroelectric crystal SbSI. The modulation is caused by electric field applied to the crystal. A S Darevskiv and A G Zbdan. Mikroelektronika. , 2 (3). ~I, 1973., 261262 (in Russia>). 30 511. Utilization

of low-voltage thin dielectric films. (USSR)

Penning discharge

for preparation

of

Utilization of low-voltage Penning discharge with cold cathodes for preparation of SiOz, Si3N4, AIN, TazOs and other dielectric films is described. Using suitable combination of electric and magnetic fields, low pressure of lo-’ to 10d3 torr of working gas can be used. Magnetic field prevents the substrate from bombardment with charge particles. High deposition rates of 50 to 250 Aimin have been attained. V A Vedernikov and T I Danilina, Mikroelektronika, 2 (3), 1973, 248-251 (in Russian). 30 512. Features of dynamics of phase transformations in conditions of rapid condensation of thin i%lms. (USSR) The processes of pulsed condensation of thin InSb films with thickness above 3000 8, are investigated in an electron diffraction apparatus at conditions of high growth rates exceeding the rate of formation of crystalline structure. It is found that formation of film structure proceeds from amorphous to crystalline state through an intermediate phase with high electrical conductivity. V I Petrosyau et al, Mikroelektronika, 2 (3), 1973, 265-267 (in Russian). -_ 30 513. On kinetics of early stages of condensation of cadmium selenide thin films. (USSR) Using a quartz film thickness monitor, kinetics of growth of cadmium selenide films, deposited from molecular beam in vacuum of 10m6 torr, is investigated. At deposition of CdSe films on amorphous (SiO) and polycrystalline under-layers (Au, Al, CdSe) the effect of 230

delayed condensation is observed at early stages of condensate formation. Yu V Nikolskiy and I B Shevchenko, Mikroelektronika, 2 (3), 1973, 270-272 (in Russian). 30 514. A new method of obtaining Cd,Hg,_,Te thin Hms. (Poland) A new method of obtaining Cd,Hg,___,Te thin films. based on denosition of HgTe on previo&ly evaporated CdTe ilms in a closed ampoule at isothermal conditions, is described. J Piotrowski, Electron Technol, 5 (2), 1972, 87-89. 30 515. Thin films of SiO, ZuS and MgFz deposited with the aid of a laser. (Roumania) Using the method of evaporation in vacuum of10M5 torr with the aid of a gas laser, very pure thin films of SiO, ZnS and MgFz have been prepared. The growth rate of 30 and 100 A/s has been attained for MgFz and SiO, respectively. V Draganescu et al, Rev Roum Phys, 18 (2), 1973,263-265 (in French). 30 516. Distribution

of impurities at film growth from gas phase. (USSR) Distribution of impurities at lYm growth from gas phase is calculated. Good agreement of results of calculations is reached with the experimental data on diffusion of P from gas phase into growing Si film. L N Aleksandrov and A N Kogan, Scient Rep of Mordovsk Univers,

No 76, 1972, 19-26 (in Russian). 30 517. Influence of substrate temperatnre on trapping of phosphorus process. (USSR)

by epitaxial

Trapping of phosphorus from PC& lization of autoepitaxial silicon films is investigated. The partial pressure 6.7 x 1O-3 to 4.7 x 10-l ton. A S Lyutovich et al, Izv AN UzSSR 60-62 (in Russian).

and partial pressure of PCIB silicon film during the growth

at various conditions of crystalin the chloride-hydrogen process of PCI, was varied in the range Ser Fiz Mat Nauk, No 2, 1973, 30

518. Structure af Se films condensed in vacuum. (USSR)

Using the methods of electron microscopy and diffraction, distribution of amorphous and crystalline phases of Se in transversal cross section of vacuum-condensed Se films is investigated. Dependknce of quantity of crystalline Se phase on substrate temperature is studied. E Montrimas et al, Liet Fiz Rinkinys, 13 (2), 1973,273-283 (in Russian). 30 519. Influence of temperature on current passage and charge accumulation in the system In-Cd!+In. (USSR) The mechanism of passage and accumulation of charge in the system In-CdS-In is investigated. Indium contacts have been -deposited in vacium better than lOA torr on CdS crvstals with thickness of 100 to 200 p& prepared from gas phase. _ B L Timan and A P Karpova, Single Crystals and Technology, Co& No 7. Kiev 1972. 60-66 (in Russian). 520. Photosensitivity of p-C@ - n-Si heterojunction. (USSR) It is shown that p-CunS - n-Si heterojunctions, prepared by thermal sublimation in vacuum 1Om6torr of powder CuzS on optically perfect (111) face of n-Si crystal, possess high photosensitivity. The photoelements based on this heterojunction reach an efficiency of 4 %. V A Drozdov and M M Melnikov, Fiz Tekh Polup, 7 (6), 1973, 119P 1196 (in Russian). 30 521. Preparation and characteristics of surface-barrier detectors of p-type silicon. (USSR) Preparation and characteristics of surface-barrier detectors of ptype silicon are described. A silicon film with thickness of 15 to 20 r_lg/cmz is evaporated from a tungsten spiral in vacuum of 5 x LOW5 -. torr on polished and etched surface of silicon crystal plates. Then aluminium film with thickness of 15 to 20 ccg/cn? is evaporated on the silicon film. V F Kushuiruk et al, Fiz Tekh Polup, 7 (7), 1973, 13961400 (in Russian). 30 522. Electric and thermal conductivlties of chromium films. (USSR) Electric and thermal conductivities of chromium films. used as film field emitters, are investigated. The chromium films h&e been pre-