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521. Measurements of the thickness and refractive index of very thin films and the optical properties of surfaces by ellipsometry
216
ClassLfied Abstracts 511--532
Vacuum Applications 30.
Evaporation and Sputtering 30
16
30
33
Adhesmn of thin films. See Abstr No 469 The melting of thin AI. films. See Abstr No 533 3O 41 511. Magnetic properties of thin nickel-iron-cobalt evaporated films. (Germany) J Eckardt, Telefunkenztg, 36 (3/4), July 1963, 127-133 30 41 37 512. Electron microscopic investigations of evaporated nickel films. (I) Influence of anneahng on the external structure of the films. (Germany) R Suhrmann et al, Z Naturfor~ch, 18a (1 l), Nov 1963, 12081211 30 41 33 513. Electron microscopic investigations of evaporated mckel films. (II) Surface roughness and orientation of the films. (Germany) R Suhrmann et al, Z Naturforsch, 18a (11), Nov 1963, 12111214 30 514. Substrates for low temperatures. (U S A ) A F Hoffman, Rev Sct Instrum, 34 (12), Dec 1963, 1430-1431 30 515. Device for measuring the thickness of thin films. (U S S R ) Yu A Durasova and E N Rybak, Instrum & Exper Tech, (1), Oct 1963, 183-184, translated from the Russian m Prlbory t Tekhn Eksper, (I), J a n - F e b 1963, 195-196 30 516. Measurement of the thickness of coatings by the registration of scattered beta-radiation. (U S S R ) Yu S ZaslavskJl et al , Instrum & Exper Techn , (1), Oct 1963, 141-143, translated from the Russian m Prtbory t Tekhn Eksper, (1), J a n - F e b 1963, 149-152 30 517 Activation method of measuring thickness of thin films and foils. ( U S S R ) F P Demsov, lnstrum & Exper Techn, (1), Oct 1963, 146-148, translated from the Russian m Prtbory t Tekhn Eksper, (I), J a n - F e b 1963, 155-157 30 518. A simple procedure to determine the saturation magnetization of thin films. (Germany) O Stemme, Telefunkenztg, 36 (3/4), July, 1963, 127-133 30 519. Thermal evaporation techniques. (U S A ) H L Caswell, Semiconductor Products, 6 (12), Dec 1963, 23-28 30 520. Triple-layer anti-reflection coatings on glass for the visible and near infrared. (U S A ) J T Cox, G Hass and A Thelen J Opt Soc A m e r , 52 (9), Sept 1962, 965-969
30 521. Measurement of the thtckness and refractive index of very thin films and the optical properties of surfaces by ellipsometry. (USA) F L McCrackm et a l , J I~os Nat Bur S t a n , 67A (4), JulyAug 1963, 363-377 30 522. Thin film technologies for electronic components. (U S A ) W D Fuller, Proc Nat Electron Conf, 18, 1962,296-307 30
523. HCM-202 thin film computer. ( U S A ) M M Dalton, Proc Nat Electron Conf, 18, 1962, 536-551 30 524. Thin film dielectrics--state of the art review. (U S A ) P White, Insulatton, 9 (10), Sept 1963, 57-66 30 525. Properties of thin film and sdlcon solid state components-their effect of microcircuit performance. (Great Brttam) J A Eklss, J Roschen, and P Thomas, Electronics Rehab M i c r o m m , 2, Dec 1963, 167-178 30 526. Failure mechamsm in thin films may work as transducer. (USA) R Cushman, Electron Destgn, 11 (22), Oct 1963, 4-5, 21 30 527. A survey of methods of measuring thin film thicknesses and surface irregularities. (Great Britain) P Wright, Electtomcs Rehab Mtcromm, 2, Dec 1963, 227-233 30 528. Thin-film battery uses cerzcoxide. (U S A ) Anon, Electron Destgn, 11 (21), Oct 11, 1963, 11
33. G e n e r a l P h y s i c s a n d E l e c t r o n i c s 33 41 30 Electron microsope investigations of evaporated nickel films. (II) Surface roughenss and orientiation of the films. See Abstr No 513 33 529. Deposition by electron bombardment and weighing under vacuum of thin high purity boron layers. (U S A ) J Van Audenhove, H L Eschbach and H Motet, Nuclear I m o u m & M e t h , 24 (5), Nov 1963, 465-470 33 530. Test assembly to examine the switching behaviour of thin magnetic films. (Germany) U Eckert, Telefunkenztg, 36 (3/4), July 1963, 146-150 33 16 531. Deposition by electron bombardment and weighing under vacuum thin high purity boron layers. (Netherlands) J Van Audenhove et al, Nuclear Instrum Methods, 24 (5), Nov 1963, 465-470 33 532. The manufacture of electron microscopes. A E l Engng, 3 (6), N o v - D e c 1963, 302-309
(Great Brttam)
ClassLfied Abstracts 511--532
Vacuum Applications 30.
Evaporation and Sputtering 30
16
30
33
Adhesmn of thin films. See Abstr No 469 The melting of thin AI. films. See Abstr No 533 3O 41 511. Magnetic properties of thin nickel-iron-cobalt evaporated films. (Germany) J Eckardt, Telefunkenztg, 36 (3/4), July 1963, 127-133 30 41 37 512. Electron microscopic investigations of evaporated nickel films. (I) Influence of anneahng on the external structure of the films. (Germany) R Suhrmann et al, Z Naturfor~ch, 18a (1 l), Nov 1963, 12081211 30 41 33 513. Electron microscopic investigations of evaporated mckel films. (II) Surface roughness and orientation of the films. (Germany) R Suhrmann et al, Z Naturforsch, 18a (11), Nov 1963, 12111214 30 514. Substrates for low temperatures. (U S A ) A F Hoffman, Rev Sct Instrum, 34 (12), Dec 1963, 1430-1431 30 515. Device for measuring the thickness of thin films. (U S S R ) Yu A Durasova and E N Rybak, Instrum & Exper Tech, (1), Oct 1963, 183-184, translated from the Russian m Prlbory t Tekhn Eksper, (I), J a n - F e b 1963, 195-196 30 516. Measurement of the thickness of coatings by the registration of scattered beta-radiation. (U S S R ) Yu S ZaslavskJl et al , Instrum & Exper Techn , (1), Oct 1963, 141-143, translated from the Russian m Prtbory t Tekhn Eksper, (1), J a n - F e b 1963, 149-152 30 517 Activation method of measuring thickness of thin films and foils. ( U S S R ) F P Demsov, lnstrum & Exper Techn, (1), Oct 1963, 146-148, translated from the Russian m Prtbory t Tekhn Eksper, (I), J a n - F e b 1963, 155-157 30 518. A simple procedure to determine the saturation magnetization of thin films. (Germany) O Stemme, Telefunkenztg, 36 (3/4), July, 1963, 127-133 30 519. Thermal evaporation techniques. (U S A ) H L Caswell, Semiconductor Products, 6 (12), Dec 1963, 23-28 30 520. Triple-layer anti-reflection coatings on glass for the visible and near infrared. (U S A ) J T Cox, G Hass and A Thelen J Opt Soc A m e r , 52 (9), Sept 1962, 965-969
30 521. Measurement of the thtckness and refractive index of very thin films and the optical properties of surfaces by ellipsometry. (USA) F L McCrackm et a l , J I~os Nat Bur S t a n , 67A (4), JulyAug 1963, 363-377 30 522. Thin film technologies for electronic components. (U S A ) W D Fuller, Proc Nat Electron Conf, 18, 1962,296-307 30
523. HCM-202 thin film computer. ( U S A ) M M Dalton, Proc Nat Electron Conf, 18, 1962, 536-551 30 524. Thin film dielectrics--state of the art review. (U S A ) P White, Insulatton, 9 (10), Sept 1963, 57-66 30 525. Properties of thin film and sdlcon solid state components-their effect of microcircuit performance. (Great Brttam) J A Eklss, J Roschen, and P Thomas, Electronics Rehab M i c r o m m , 2, Dec 1963, 167-178 30 526. Failure mechamsm in thin films may work as transducer. (USA) R Cushman, Electron Destgn, 11 (22), Oct 1963, 4-5, 21 30 527. A survey of methods of measuring thin film thicknesses and surface irregularities. (Great Britain) P Wright, Electtomcs Rehab Mtcromm, 2, Dec 1963, 227-233 30 528. Thin-film battery uses cerzcoxide. (U S A ) Anon, Electron Destgn, 11 (21), Oct 11, 1963, 11
33. G e n e r a l P h y s i c s a n d E l e c t r o n i c s 33 41 30 Electron microsope investigations of evaporated nickel films. (II) Surface roughenss and orientiation of the films. See Abstr No 513 33 529. Deposition by electron bombardment and weighing under vacuum of thin high purity boron layers. (U S A ) J Van Audenhove, H L Eschbach and H Motet, Nuclear I m o u m & M e t h , 24 (5), Nov 1963, 465-470 33 530. Test assembly to examine the switching behaviour of thin magnetic films. (Germany) U Eckert, Telefunkenztg, 36 (3/4), July 1963, 146-150 33 16 531. Deposition by electron bombardment and weighing under vacuum thin high purity boron layers. (Netherlands) J Van Audenhove et al, Nuclear Instrum Methods, 24 (5), Nov 1963, 465-470 33 532. The manufacture of electron microscopes. A E l Engng, 3 (6), N o v - D e c 1963, 302-309
(Great Brttam)