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531. Synthesis of CdTe epitaxial films
Classified
abstracts
523-535
pared by evaporation of chromium in vacuum of 2 x lo-’ to 7 x 1O-6 torr on synthetic mica substrates kept at 300°C. V M Abrosimov et al, Radiotekh Elektron, 18 (8), 1973, 17541955 (in Russian). 30 523. On mechanical stability of film field emission cathode in the ultrahigh frequency range. (USSR)
Elastic vibrations of film field emission cathode due to ponderomotoric forces in the ultrahigh frequency range are considered. Formulas for determination of both resonance and operating frequencies of the cathodes have been obtained. Application of the obtained formulas is shown on an example of chromium film cathode. B V Bondarenko and L A Kirichenko, Radiotekh Elektron, 18 (8), 1973, 1698-1700 (in Russian). 30 524. Temperature dependences of kinetic coefficients of bismuth films. (USSR) Temperature dependences of the coefficients of thermal and electrical conductivity, thermal emf of Bi films with various thickness are investigated in a broad temperature interval of 90 to 510°K. The Bi films have been prepared by thermal evaporation of Bi in vacuum of low6 torr on polymer substrates kept at 106°C. The deposition rate was 22 A/s. V M Abrosimov et al, Radiotekh Elektron, 18 (7), 1973, 1449-1458 (in Russian). 30 525. A device for measurement of Hall mobility in thin films during the
evaporation process. (USSR) A small-size magnetic device for generating of magnetic field and which can be placed in the vacuum chamber of an evaporation apparatus, is described. The device enables one to measure Hall mobility of charge carriers in thin films during the process of their preparation in vacuum. V A Labunov and B S Kolosnitsyn, Zavod Lab, 39 (6), 1973, 760-762 (in Russian). 30 526. Dielectric breakdown in AI-BO,-AI sandwich fdms. (Germany) Sandwich films of Al-SiO,-Al, prepared by evauoration in vacuum, were investigated to test current theories of dielectric breakdown of films. The experiments showed an increase of the breakdown field with increasing oxygen content of the SiO, layer. H Hoffmann and J ReflIe, Phys Stat Sol (a), 18 (l), 1973,197-202. 30 527. V-V,O,-Pb Josephson tunnel junctions of high stability. (Germany) Problems of producing and properties of V-V,O,-Pb Josephson tunnel junctions are described. Superconductive vanadium films with thickness between 250 and 5000 A are evaporated on glass substrates at temperatures of 25 to 300°C in vacuum of 5 x lo-’ to 5 x 10m6 torr using a 2 kW electron beam evaporating source. Evaporation of a lower V-stripe conductor of the Josephson tunnel junction happened at a substrate temperature 150°C and an evaporation rate 15 to 20 A/s. Film thickness is 2500 A. During V-evaporation at a total pressure 5.5 x lo-’ torr the partial pressures of the disturbing residual gas components O2 and Nz are reduced to values 4 x lo-* and 5 x lo-* torr, respectively, by additional application of a Meissner cooling trap and a Ti-getter pump. Tunnel barriers with thickness below 30 A were produced by surface oxidation of the Vstripe conductor in an oxygen plasma at oxygen partial pressure of 0.05 to 0.1 torr. H Seifarth and W Rentsch, Phys Srat Sol (a), 18 (l), 1973, 135-146. 30 528. Superconducting transition of strong-coupling thin films. (Germany) The transition fields of Pb-Bi thin films, placed in a transverse field. have been measured. The films were prepared by evaporation under vacuum lo-’ torr of the alloys placed in a Joule-heated crucible. The films were deposited in glass substrates at room temperature at a relatively slow rate of 40 A/s. J Pine1 and C Lebeau, Phys Stat Sol (a), 18 (l), 1973, 183-187 (in
were condensed in vacuum of lo-’ torr using both subsequent and simultaneous evaporation of the components from two sources. It is found that a mixture of monoclinic and tetragonal phases is formed at preparation of Ag,S films by both subsequent deposition of the components and evaporation of synthesized compound. R B Shatlzade et al, Neorg Mater, 9 (7), 1973, 10941097 (in Russian). 30 530. On thermodynamics of the process of preparation of CJS films
by the method of gas transport reactions. (USSR) Methods for calculations of the composition of gas phase and supersaturation in the crystallization zone at preparation of CdS compound films in hydrogen flow are considered. The dependences of supersaturation on partial pressure of introduced cadmium vapour are given. A I Volkov and I M Kotelyanskiy, Neorg Mater, 9 (7), 1973, 11091111 (in Russian). 30 531. Synthesis of CdTe epitaxial films. (USSR)
The influence of degree of vapour supersaturation above substrate, epitaxy temperature and evaporation temperature is investigated on morphology, phase composition and perfectness degree of CdTe films, prepared in vacuum of 10e5 torr by condensation on mica in a quasi-closed volume. It is shown that highly oriented CdTe films can be synthetized at relatively low temperatures of epitaxy of 150°C. The described method of evaporation of powder CdTe enables one to prepare epitaxial films of CdTe of cubic and hexagonal modifications. Single crystal CdTe tilms, grown at temperature of evaporation of 550 to 580°C and temperature difference of 30”, consist of grains of crystallites with size above 100 pm. Yu K Ezhovskiy et al, Neorg Mater, 9 (7), 1973, 1115-1120 (in Russian). 30 532. Composition and electric properties of amorphous Sb&
films.
(USSR) Uniformity of chemical composition and electric properties in thickness of condensed Sb& films with thickness of 1 to 2 pm is investigated. The starting material was prepared by alloying at 700°C of Sb and S in quartz ampoules evacuated to 10e3 torr. The Sb& films have been deposited on glass substrates by thermal evaporation of the starting material from tantalum boats or quartz crucibles. It is found that amorphous Sb& films, prepared by total evaporation of the charge, are enriched by antimony in comparison with the starting material. The excess of Sb may reach 4.3% and it is enhanced in the film region near substrate. Due to variations in chemical composition in the films with thickness also electric properties and the type of conductivity change. Presence of p-n junction in the films results in appearance of photodiode characteristics. D A Sakseev and L G Timofeeva, Neorg Mater, 9 (7), 1973, 11211125 (in Russian). 30 533. Photoconductivity and optical properties of crystals and films of
SbSeI-BiSeI. (USSR) Electrical conductivity, optical and photoelectric properties of polycrystals and films of solid solutions SbSeI-BiSeI are investigated in a broad temperature interval. The films have been prepared by evaporation of polycrystals in vacuum 5 x 10v5 torr on glass substrates kept at 150°C. Evaporation of the starting materials was performed from quartz ampoules heated by tungsten heaters to 850 to 900°C. Thickness of the prepared films was 0.3 to 1.5 pm. The films of all compositions were uniform and they do not differ in optical, photoelectric and electric properties from the starting materials. D P Belotskiy et al, Neorg Mater, 9 (7), 1973, 1142-l 145 (in Russian). 30 534. Determination of resonance ultrahigh frequency permeability of
Russian).
conducting ferromagnetic 8lms. (USSR) Resonance ultrahigh frequency permeability is measured in thin permalloy films prepared by thermal evaporation in vacuum 5 x 10m5 torr on mica substrates. Yu V Komev et al, Izo VUZ Fiz, No 6,1973, 147-149 (in Russian).
30 529. Electron diffraction investigation of formation of phases in the
30 535. Properties of aluminium nitride lilms prepared by reactive evapora-
Ag-S system. (USSR) Using the method of electron diffraction, formation of phases in the thin-film Ag-S system is investigated. Thin films of the system Ag-S
tion. (USSR) The influence of substrate temperature and film thickness on structural and electric properties of aluminium nitride films, prepared by 231
abstracts
523-535
pared by evaporation of chromium in vacuum of 2 x lo-’ to 7 x 1O-6 torr on synthetic mica substrates kept at 300°C. V M Abrosimov et al, Radiotekh Elektron, 18 (8), 1973, 17541955 (in Russian). 30 523. On mechanical stability of film field emission cathode in the ultrahigh frequency range. (USSR)
Elastic vibrations of film field emission cathode due to ponderomotoric forces in the ultrahigh frequency range are considered. Formulas for determination of both resonance and operating frequencies of the cathodes have been obtained. Application of the obtained formulas is shown on an example of chromium film cathode. B V Bondarenko and L A Kirichenko, Radiotekh Elektron, 18 (8), 1973, 1698-1700 (in Russian). 30 524. Temperature dependences of kinetic coefficients of bismuth films. (USSR) Temperature dependences of the coefficients of thermal and electrical conductivity, thermal emf of Bi films with various thickness are investigated in a broad temperature interval of 90 to 510°K. The Bi films have been prepared by thermal evaporation of Bi in vacuum of low6 torr on polymer substrates kept at 106°C. The deposition rate was 22 A/s. V M Abrosimov et al, Radiotekh Elektron, 18 (7), 1973, 1449-1458 (in Russian). 30 525. A device for measurement of Hall mobility in thin films during the
evaporation process. (USSR) A small-size magnetic device for generating of magnetic field and which can be placed in the vacuum chamber of an evaporation apparatus, is described. The device enables one to measure Hall mobility of charge carriers in thin films during the process of their preparation in vacuum. V A Labunov and B S Kolosnitsyn, Zavod Lab, 39 (6), 1973, 760-762 (in Russian). 30 526. Dielectric breakdown in AI-BO,-AI sandwich fdms. (Germany) Sandwich films of Al-SiO,-Al, prepared by evauoration in vacuum, were investigated to test current theories of dielectric breakdown of films. The experiments showed an increase of the breakdown field with increasing oxygen content of the SiO, layer. H Hoffmann and J ReflIe, Phys Stat Sol (a), 18 (l), 1973,197-202. 30 527. V-V,O,-Pb Josephson tunnel junctions of high stability. (Germany) Problems of producing and properties of V-V,O,-Pb Josephson tunnel junctions are described. Superconductive vanadium films with thickness between 250 and 5000 A are evaporated on glass substrates at temperatures of 25 to 300°C in vacuum of 5 x lo-’ to 5 x 10m6 torr using a 2 kW electron beam evaporating source. Evaporation of a lower V-stripe conductor of the Josephson tunnel junction happened at a substrate temperature 150°C and an evaporation rate 15 to 20 A/s. Film thickness is 2500 A. During V-evaporation at a total pressure 5.5 x lo-’ torr the partial pressures of the disturbing residual gas components O2 and Nz are reduced to values 4 x lo-* and 5 x lo-* torr, respectively, by additional application of a Meissner cooling trap and a Ti-getter pump. Tunnel barriers with thickness below 30 A were produced by surface oxidation of the Vstripe conductor in an oxygen plasma at oxygen partial pressure of 0.05 to 0.1 torr. H Seifarth and W Rentsch, Phys Srat Sol (a), 18 (l), 1973, 135-146. 30 528. Superconducting transition of strong-coupling thin films. (Germany) The transition fields of Pb-Bi thin films, placed in a transverse field. have been measured. The films were prepared by evaporation under vacuum lo-’ torr of the alloys placed in a Joule-heated crucible. The films were deposited in glass substrates at room temperature at a relatively slow rate of 40 A/s. J Pine1 and C Lebeau, Phys Stat Sol (a), 18 (l), 1973, 183-187 (in
were condensed in vacuum of lo-’ torr using both subsequent and simultaneous evaporation of the components from two sources. It is found that a mixture of monoclinic and tetragonal phases is formed at preparation of Ag,S films by both subsequent deposition of the components and evaporation of synthesized compound. R B Shatlzade et al, Neorg Mater, 9 (7), 1973, 10941097 (in Russian). 30 530. On thermodynamics of the process of preparation of CJS films
by the method of gas transport reactions. (USSR) Methods for calculations of the composition of gas phase and supersaturation in the crystallization zone at preparation of CdS compound films in hydrogen flow are considered. The dependences of supersaturation on partial pressure of introduced cadmium vapour are given. A I Volkov and I M Kotelyanskiy, Neorg Mater, 9 (7), 1973, 11091111 (in Russian). 30 531. Synthesis of CdTe epitaxial films. (USSR)
The influence of degree of vapour supersaturation above substrate, epitaxy temperature and evaporation temperature is investigated on morphology, phase composition and perfectness degree of CdTe films, prepared in vacuum of 10e5 torr by condensation on mica in a quasi-closed volume. It is shown that highly oriented CdTe films can be synthetized at relatively low temperatures of epitaxy of 150°C. The described method of evaporation of powder CdTe enables one to prepare epitaxial films of CdTe of cubic and hexagonal modifications. Single crystal CdTe tilms, grown at temperature of evaporation of 550 to 580°C and temperature difference of 30”, consist of grains of crystallites with size above 100 pm. Yu K Ezhovskiy et al, Neorg Mater, 9 (7), 1973, 1115-1120 (in Russian). 30 532. Composition and electric properties of amorphous Sb&
films.
(USSR) Uniformity of chemical composition and electric properties in thickness of condensed Sb& films with thickness of 1 to 2 pm is investigated. The starting material was prepared by alloying at 700°C of Sb and S in quartz ampoules evacuated to 10e3 torr. The Sb& films have been deposited on glass substrates by thermal evaporation of the starting material from tantalum boats or quartz crucibles. It is found that amorphous Sb& films, prepared by total evaporation of the charge, are enriched by antimony in comparison with the starting material. The excess of Sb may reach 4.3% and it is enhanced in the film region near substrate. Due to variations in chemical composition in the films with thickness also electric properties and the type of conductivity change. Presence of p-n junction in the films results in appearance of photodiode characteristics. D A Sakseev and L G Timofeeva, Neorg Mater, 9 (7), 1973, 11211125 (in Russian). 30 533. Photoconductivity and optical properties of crystals and films of
SbSeI-BiSeI. (USSR) Electrical conductivity, optical and photoelectric properties of polycrystals and films of solid solutions SbSeI-BiSeI are investigated in a broad temperature interval. The films have been prepared by evaporation of polycrystals in vacuum 5 x 10v5 torr on glass substrates kept at 150°C. Evaporation of the starting materials was performed from quartz ampoules heated by tungsten heaters to 850 to 900°C. Thickness of the prepared films was 0.3 to 1.5 pm. The films of all compositions were uniform and they do not differ in optical, photoelectric and electric properties from the starting materials. D P Belotskiy et al, Neorg Mater, 9 (7), 1973, 1142-l 145 (in Russian). 30 534. Determination of resonance ultrahigh frequency permeability of
Russian).
conducting ferromagnetic 8lms. (USSR) Resonance ultrahigh frequency permeability is measured in thin permalloy films prepared by thermal evaporation in vacuum 5 x 10m5 torr on mica substrates. Yu V Komev et al, Izo VUZ Fiz, No 6,1973, 147-149 (in Russian).
30 529. Electron diffraction investigation of formation of phases in the
30 535. Properties of aluminium nitride lilms prepared by reactive evapora-
Ag-S system. (USSR) Using the method of electron diffraction, formation of phases in the thin-film Ag-S system is investigated. Thin films of the system Ag-S
tion. (USSR) The influence of substrate temperature and film thickness on structural and electric properties of aluminium nitride films, prepared by 231