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597. Field ion microscopy of tungsten after vacuum breakdown
Classified abstracts 592--604 tions of multi-charged ions of Co, Ta and W formed under the action of high power laser radiation of 2 GW at radiation flux density of 1018 W/cm 2 on the solid target, are investigated in vacuum. Experimental results are discussed. Yu A Bykovskiy et al, Zh Tekh Fiz, 40 (12), 1970, 2578-2580 (in
Russian). 33 592. Radiation damage of semiconductor crystals on ion implantation. (USSR) A survey of published data on problems connected with radiation damage in semiconducting materials is presented. Formation of inversion layers, electro-physical characteristics of surface layers in dependence on energy and dose of bombarding particles, influence of annealing temperature, formation of amorphous layers, crystallization of amorphous layers, and the distribution profiles of implanted ions, are discussed. R I Garber et al, Radiation Physics of Nonmetallic Crystals', 3 (1), Collect, Naukovaya Dumka Kiev 1971, 42-65 (in Russian). 33 593. Space distribution of radiation defects and implanted ions in crystals irradiated by fast ions. (USSR) Calculation of the profile of radiation defects and implanted ions after directed irradiation of oriented single crystal by a monoenergetic beam of fast ions is performed. The critical dose, at which channeling ceases, is calculated. M A Kumakhov, Radiation Physics of Nonmetallic Crystals, 3 (1), Collect, Naukovaya Dumka Kiev 1971, 132-142 (in Russian). 33 594. Investigation of microhardness of surface layers of silicon doped by ion implantation. (USSR) Changes in the microhardness of silicon surfaces with different crystallographic orientation due to bombardment by boron ions, with energies of 30, 40 and 100 keV, are investigated. Experimental results are discussed. I L Gverdtsiteli et al, Radiation Physics of Nonmetallic Crystals, 3 (2), Collect, Naukovaya Dumka Kiev 1971, 138-143 (in Russian). 33 595. Doping of silicon by high-energy ions of boron, nitrogen and phosphorus. (USSR) Results of investigation of the process of ion implantation of boron and nitrogen ions with energy of 0.4 to 7.5 MeV at doses of 5 × 1012 to 1 x 1015 cm -z and 1.1 MeV phosphorus ions at a dose of 4 x 1014 cm -2 in n-type silicon are presented. Annealing after ion implantation was performed in vacuum or hydrogen. The penetration depths of ions in silicon are determined. Yu V Bulgakov et al, Radiation Physics of Nonmetallic Crystals', 3 (2), Collect, Naukovaya Dumka Kiev 1971, 148-154 (in Russian). 33 596. Influence of ion implantation on density of dislocations in Si. (USSR) Influence of ion bombardment by 40 keV boron ions at doses of 10TM to 1018 cm -2 on density of dislocations in silicon is investigated. The density of dislocations on the silicon surface is determined with the aid of a microscope after silicon surface etching. It is found that after ion bombardment the density of dislocations in silicon increases. Anneal of the bombarded samples in vacuum of 10 -5 torr at 600 to 1000°C results in the generation of additional dislocations. R I Garber et al, Radiation Physics of Nonmetallic Crystals, 3 (2), Collect, Naukovaya Dumka Kiev 1971, 128-133 (in Russian). 33 597. Field ion microscopy of tungsten after vacuum breakdown. (USSR) Surface of a tungsten emitter formed at vacuum breakdown is investigated in a field ion microscope. Structure of the microtip is explored with the aid of evaporation of atoms by electric field. It is shown that newly formed microtips after vacuum breakdown have a perfect structure and the observed light and dark rings are due to the shape of microtip. N N Syutkin and N N Vyatkin, Zh Tekh Fiz, 41 (9), Sept 1971, 19791982 (in Russuan). 33 598. Transmission spectra of sodium chloride single crystals in electric field. (USSR) Changes in transmission spectra of NaCI single crystals due to electric field are investigated in the spectral range 2000 to 1700 A, in a vacuum
174
spectrograph. An adaptation of the vacuum spectrograph for this type of investigation is described. V N Vishnevskiy et al, Fiz Tverd Tela, 13 (9), 1971, 2762-2764 (in
Russian). 33 599. Sliding discharge in vacuum on barium titanate dielectrics. (USSR). Using the methods of high-voltage nanosecond impulse technique, ultrahigh-speed photography, and recording of the glow spectrum, the discharge on the surface of dielectrics with high dielectric constant is investigated. The experimental vacuum chamber was evacuated to 5 × 10-e tort by an oil diffusion pump equipped with a cooled trap. The discharge was initiated by evaporation of the dielectrics under the action of electron bombardment from the cathode. Lines of materials from both dielectric and electrode are observed in the discharge plasma. Dynamics of the appearance of these lines are investigated. The glowing boundary of the discharge is propagated with a velocity of 107 cm/sec. The current rise is provided by the charging of a dynamic capacitor, one plate of which is formed by production of plasma on the dielectric surface. S P Bugaev et al, Zh Tekh Fiz, 41 (9), Sept 1971, 1958-1962 (in
Russian). 33 600. High-vacuum ion sources. (USSR) A review of publications on high-vacuum ion sources is presented. For more complete evaluation of high-vacuum ion sources, two parameters, perveance of the source and the coefficient of ion current passage, are recommended. G M Zinchenko and M S Zinchenko, Ukr Fiz Zh, 16 (7), 1971, 1057-1069 (in Ukrainian). 33 601. Motion of charged particles in mixed electric and homogeneous magnetic fields. (USSR) Motion of charged particles in homogeneous magnetic field mixed with electric field, approximating to the field of electrodes in a discharge space of the Penning type, is studied. Possibilities of utilizing the results to improve the properties of vacuum gauges and ionic pumps are considered. A S Borodkin, Zh Tekh Fiz, 41 (9), Sept 1971, 1845-1850 (in Russian). 33 602. Electrostatic spectrometer with high resolution for ESCA method. (USSR) A new electron spectrometer is described, the dispersion part of which consists of two pairs of immersion cylindrical lenses with combined central planes. Doublets of five-electrode quadrupoleoctupole lenses are used as focusing elements. A demountable x-ray tube is connected to the electron spectrometer. Parameters of the spectrometer are described and examples of some spectra of photoand Auger electrons are presented. The spectrum of electrons released from the K-level of carbon in a soot film by Mg Kx radiation is shown. The residual gas pressure in the spectrometer was 10 -5 torr and in the x-ray tube it was 10-8 torr. Also the spectrum of Auger electrons of Na in a NaCI film evaporated in vacuum on a glass substrate is presented. The Auger electrons were also excited by x-radiation. Absence of magnetic fields, easy access to samples and detector, easy control of dispersion and simple construction are advantages of the described spectrometer in its application to electron spectroscopic chemical analysis. C Ya Yavor et al, Zh Tekh Fiz, 41 (9), Sept 1971, 1839-1844 (in
Russian). 33 603. Induced impurity photoconductivity in the seignetoelectric semiconductor ShSI. (USSR) Spectral distribution and kinetics of induced impurity photoconductivity in SbSI are investigated at 10 -5 torr in a vacuum cryostat. Experimental results are discussed. A A Grekov et al, Fiz Tekh Polup, 5 (7), 1971, 1287-1292 (in Russian). 33 604. Kinetic properties and electron-phonon scattering in transition metals. (USSR) Thermal conductivity of yttrium is investigated in the temperature interval of 750 to 1600°K in vacuum at 1 × 10-~ torr using the method of plane temperature waves at frequency of 168.8 Hz. The positive coefficient of the temperature dependence of thermal conductivity of
Russian). 33 592. Radiation damage of semiconductor crystals on ion implantation. (USSR) A survey of published data on problems connected with radiation damage in semiconducting materials is presented. Formation of inversion layers, electro-physical characteristics of surface layers in dependence on energy and dose of bombarding particles, influence of annealing temperature, formation of amorphous layers, crystallization of amorphous layers, and the distribution profiles of implanted ions, are discussed. R I Garber et al, Radiation Physics of Nonmetallic Crystals', 3 (1), Collect, Naukovaya Dumka Kiev 1971, 42-65 (in Russian). 33 593. Space distribution of radiation defects and implanted ions in crystals irradiated by fast ions. (USSR) Calculation of the profile of radiation defects and implanted ions after directed irradiation of oriented single crystal by a monoenergetic beam of fast ions is performed. The critical dose, at which channeling ceases, is calculated. M A Kumakhov, Radiation Physics of Nonmetallic Crystals, 3 (1), Collect, Naukovaya Dumka Kiev 1971, 132-142 (in Russian). 33 594. Investigation of microhardness of surface layers of silicon doped by ion implantation. (USSR) Changes in the microhardness of silicon surfaces with different crystallographic orientation due to bombardment by boron ions, with energies of 30, 40 and 100 keV, are investigated. Experimental results are discussed. I L Gverdtsiteli et al, Radiation Physics of Nonmetallic Crystals, 3 (2), Collect, Naukovaya Dumka Kiev 1971, 138-143 (in Russian). 33 595. Doping of silicon by high-energy ions of boron, nitrogen and phosphorus. (USSR) Results of investigation of the process of ion implantation of boron and nitrogen ions with energy of 0.4 to 7.5 MeV at doses of 5 × 1012 to 1 x 1015 cm -z and 1.1 MeV phosphorus ions at a dose of 4 x 1014 cm -2 in n-type silicon are presented. Annealing after ion implantation was performed in vacuum or hydrogen. The penetration depths of ions in silicon are determined. Yu V Bulgakov et al, Radiation Physics of Nonmetallic Crystals', 3 (2), Collect, Naukovaya Dumka Kiev 1971, 148-154 (in Russian). 33 596. Influence of ion implantation on density of dislocations in Si. (USSR) Influence of ion bombardment by 40 keV boron ions at doses of 10TM to 1018 cm -2 on density of dislocations in silicon is investigated. The density of dislocations on the silicon surface is determined with the aid of a microscope after silicon surface etching. It is found that after ion bombardment the density of dislocations in silicon increases. Anneal of the bombarded samples in vacuum of 10 -5 torr at 600 to 1000°C results in the generation of additional dislocations. R I Garber et al, Radiation Physics of Nonmetallic Crystals, 3 (2), Collect, Naukovaya Dumka Kiev 1971, 128-133 (in Russian). 33 597. Field ion microscopy of tungsten after vacuum breakdown. (USSR) Surface of a tungsten emitter formed at vacuum breakdown is investigated in a field ion microscope. Structure of the microtip is explored with the aid of evaporation of atoms by electric field. It is shown that newly formed microtips after vacuum breakdown have a perfect structure and the observed light and dark rings are due to the shape of microtip. N N Syutkin and N N Vyatkin, Zh Tekh Fiz, 41 (9), Sept 1971, 19791982 (in Russuan). 33 598. Transmission spectra of sodium chloride single crystals in electric field. (USSR) Changes in transmission spectra of NaCI single crystals due to electric field are investigated in the spectral range 2000 to 1700 A, in a vacuum
174
spectrograph. An adaptation of the vacuum spectrograph for this type of investigation is described. V N Vishnevskiy et al, Fiz Tverd Tela, 13 (9), 1971, 2762-2764 (in
Russian). 33 599. Sliding discharge in vacuum on barium titanate dielectrics. (USSR). Using the methods of high-voltage nanosecond impulse technique, ultrahigh-speed photography, and recording of the glow spectrum, the discharge on the surface of dielectrics with high dielectric constant is investigated. The experimental vacuum chamber was evacuated to 5 × 10-e tort by an oil diffusion pump equipped with a cooled trap. The discharge was initiated by evaporation of the dielectrics under the action of electron bombardment from the cathode. Lines of materials from both dielectric and electrode are observed in the discharge plasma. Dynamics of the appearance of these lines are investigated. The glowing boundary of the discharge is propagated with a velocity of 107 cm/sec. The current rise is provided by the charging of a dynamic capacitor, one plate of which is formed by production of plasma on the dielectric surface. S P Bugaev et al, Zh Tekh Fiz, 41 (9), Sept 1971, 1958-1962 (in
Russian). 33 600. High-vacuum ion sources. (USSR) A review of publications on high-vacuum ion sources is presented. For more complete evaluation of high-vacuum ion sources, two parameters, perveance of the source and the coefficient of ion current passage, are recommended. G M Zinchenko and M S Zinchenko, Ukr Fiz Zh, 16 (7), 1971, 1057-1069 (in Ukrainian). 33 601. Motion of charged particles in mixed electric and homogeneous magnetic fields. (USSR) Motion of charged particles in homogeneous magnetic field mixed with electric field, approximating to the field of electrodes in a discharge space of the Penning type, is studied. Possibilities of utilizing the results to improve the properties of vacuum gauges and ionic pumps are considered. A S Borodkin, Zh Tekh Fiz, 41 (9), Sept 1971, 1845-1850 (in Russian). 33 602. Electrostatic spectrometer with high resolution for ESCA method. (USSR) A new electron spectrometer is described, the dispersion part of which consists of two pairs of immersion cylindrical lenses with combined central planes. Doublets of five-electrode quadrupoleoctupole lenses are used as focusing elements. A demountable x-ray tube is connected to the electron spectrometer. Parameters of the spectrometer are described and examples of some spectra of photoand Auger electrons are presented. The spectrum of electrons released from the K-level of carbon in a soot film by Mg Kx radiation is shown. The residual gas pressure in the spectrometer was 10 -5 torr and in the x-ray tube it was 10-8 torr. Also the spectrum of Auger electrons of Na in a NaCI film evaporated in vacuum on a glass substrate is presented. The Auger electrons were also excited by x-radiation. Absence of magnetic fields, easy access to samples and detector, easy control of dispersion and simple construction are advantages of the described spectrometer in its application to electron spectroscopic chemical analysis. C Ya Yavor et al, Zh Tekh Fiz, 41 (9), Sept 1971, 1839-1844 (in
Russian). 33 603. Induced impurity photoconductivity in the seignetoelectric semiconductor ShSI. (USSR) Spectral distribution and kinetics of induced impurity photoconductivity in SbSI are investigated at 10 -5 torr in a vacuum cryostat. Experimental results are discussed. A A Grekov et al, Fiz Tekh Polup, 5 (7), 1971, 1287-1292 (in Russian). 33 604. Kinetic properties and electron-phonon scattering in transition metals. (USSR) Thermal conductivity of yttrium is investigated in the temperature interval of 750 to 1600°K in vacuum at 1 × 10-~ torr using the method of plane temperature waves at frequency of 168.8 Hz. The positive coefficient of the temperature dependence of thermal conductivity of