- Email: [email protected]
738. Optical constants of thin gold films
Classified
abstracts
735-746
most effective method is to control directly the properties of the CdSe-insulator surface by means of an interlayer which has a strong affinity with oxygen. Such a layer can be made of a Si,O,, material, in which the quantity y is smaller than that corresponding to the stoichiometric composition of the oxide. The uncompensated Si contained in the layer is able to bond the oxygen adsorbed on the Cd& surface and therefore lowers the concentration of negative surface charges. The results of experiments indicate that this method provides good electrical properties of thin-film transistors as well as good manufacturing reproducibility. J Adamcik and J Schroffel, Teslu Electronics, 4 (4), I97 I, 107-l I I. 30 735. High-temperature stable thin-film thermocouples. (USSR) Inertia-less thin-film thermocouples are used for high temperature measurement in nonstationary processes. For measurement of the temperature of metallic components ,a nickel film is vacuum deposited on the component, which serves as second electrode. Qualitative investigation of the oxidation and diffusion processes at 800 and 1000 C in vacuum condensed nickel films showeh that vacuum treatment of the films at 1000°C and I .3 x lo-” Pa does not result in decrease of their thickness. Results obtained by thermal treatment in air permit determination of the minimum thickness of the nickel film providing operation of the thin-film thermocouple for the determined time. With nickel film thickness of 30 jtm the thermocouple can be used for 5 hours at IOOO’C. L S Palatnik et al, lzmerit Tekh, No 7, I97 I, 3 1-33 (in Russian). 30 736. Influence of nitrogen and oxygen on predominant crystallite orientation in vacuum condensates of chromium on amorphous suhstrates. (USSR) The influence of nitrogen and oxygen contained in residual gas on the predominant crystallite orientation in vacuum condensates of chromium on glass substrates, is investigated. With increasing oxygen partial pressure from 9 x IO-’ to 1 x 1O-5 torr, a rapid change of axial textures occurs in films, in succession: (1 IO), (I 1I) and (112). Increase of the nitrogen partial pressure from 1 x 1Om6 to 3 x 10e3 torr does not influence the conditions of occurrence of the (11I) texture in the film. The cbserved phenomena are explained by selective adsorption of the tested gases by different faces of face-centred-cubic lattice of chromium, nonmonotonic dependence of the condensation coefficient of chromium on the thickness of the adsorbed layer of active gas, and also by the nature of nitrogen and oxygen chemisorption on chromium. V S Kogan and A L Seryugin, Fiz Met Metalloved, 32 (I), I97 I, 203205 (in Rmsiun). 30 737. Measurement of the evaporation rate by thermionic currents. (USSR) A method for measurement of the evaporation rate in the preparation of thin films by thermal evaporation in vacuum is considered. The method is based on measurement of the ionic current emitted during the thermal evaporation of metals. Construction of an instrument suitable for this measurement is presented. A A Vasilkovskiy and P N Golfenshteyn, Izmerit Tekh, No 2, 197 1, 8% 91 (in Russian). 30 738. Optical constants of thin gold films. (USSR) Optical constants of granular thin gold films deposited on carefully cleaned quartz substrates in vacuum at 10m5 torr with a deposition rate of 50 to 100 A/set are investigated. Gold was evaporated from tungsten boats. Structure of the gold films was observed in an electron microscope. I N Shklyarevskiy et al, Optika Spektroskop, 31 (3). Sept 197 I, 41441 8 (in Russian). 30 739. An investigation of the structure of non-crystalline films of nickel, cobalt, and cobalt-phosphorus by electron diffraction. (Germany) Non-crystalline thin films of nickel and cobalt have been prepared by vapour deposition onto liquid-nitrogen-cooled substrates in vacua at lO-5 torr, whilst a cobalt-phosphorus alloy has been produced by electroless deposition. An electron diffraction study of these samples has been undertaken. It is found that a perfect dense random packing of atoms is not obtained since it is not possible to violate the distance of closest atomic approach observed in the crystalline state. (England) L B Davies and P J Grundy, Phys Sfat Sol (a), 8 (I ), Nov 197 I, I89~mI Y7. 244
740. Deposition of boron nitride films on silicon substrates and their utilization as diffusion sources. (Germany) Boron nitride films are deposited on silicon substrates by meails 01 spark discharge in hydrogen and nitrogen. The quartz deposition apparatus with elcctrodcs containing boron is described. It is shown that the boron nitride films used as diffusion source give well reproducible boron distributions with homogeneous surface concentrations. The boron profiles correspond to a Gaussian distribution. H J Schnabel and F Fleischer, P/r.~,.sStat So/(a), 8 (I), Nol: 1971. 71-78 (if? Geumnlr). 30 741. Investigation of structure of vacuum evaporated films of NiFe alloys. (Poland) Vacuum evaporated films of NiFe alloy containing 79.3 per cent of Ni, are investigated. The filn-s were deposited in a magnetic field of 9500 A/m at substrate temperatures from 293 to 673’ K with deposition rate of I.1 nmjsec. It is found that grain-size increases with increasing substrate temperature. Chemical composition of the films is uniform as was determined with the aid of X-ray microanalyzer. W Babinski et al, Arc11 H/rt/~, 16 (2), lY71, 173-185 (i/l Polisl~). 30 742. Influence of ultrasonic vibrations on the condensation process during vacuum deposition. (USSR) Influence of ultrasonic vibrations, excited in the substrate perpendicularly to the deposition plane, on the condensation process of vacuum evaporated thin metallic films, is investigated. It is shown that ultrasonic vibrations increase the deposition rate and the film thickness. V P Severdenko et al, lIohl AlGad Nuuh Bel SSR, 15 (8), I97 I, 68969 1 (in Russim). 30 743. Photoemissive determination of the barrier protile in AI-A&O,-AI tunnel junctions. (Germany) Barrier profiles in AI-A&O,,-AI tunnel junctions are determined on a basis of photoemission measurements. Glass slides with pitchpolished and carefully cleaned surfaces w’ere used as substrates. During evaporation of the Al electrodes the pressure did not exceed 5 /\ IO-’ torr. The oxide film was grown by plasma oxidation in an oxygen glow discharge at about 5h lo-” torr. The edge of the oxidized base electrode was coated with an evaporated LiF or SiO film. The thickness of top Al electrodes was of the order of 50 A. Using this procedure, diodes with high stability and an excellent reproducibility of the electrical properties were obtained. The photoemission measurements were made at 77’ K using conventional ac techniques at a frequency of 22.6 Hz. With this arrangement photocurrents of 10~” A could be measured at dark currents of 10m7 A. B Korneffel and W Ludwig, PhJvs Stat Sol (a), 8 (I ), Nov 197 I, I49- 160. 30 (Roumania) 744. Deposition of thin films by cathodic sputtering. A vacuum apparatus for deposition of thin films by cathodic sputtering of materials in glow discharge is described. Sputtering is performed in a glass bell jar placed on a metallic plate. F D Constantinescu et al, Slur/ si Cevr Fiz, 23 (5), I97 I, 609-612 (i/r Rorrmanian). 31. EVACUATION
AND SEALING
31 745. Reactions in chemisorbed layers of polyatomic molecules on emitters observed by means of surface ionization and evaluation of (USSR) ionization potentials of reaction products. Emission data derived from the Langmuir-Saha formula are used to evaluate the ionization potentials of radicals and particles with additional hydrogen atoms. The reactions of organic compounds on tungsten oxides were investigated at 1 % IO-’ torr using the surface ionization method. It is concluded that vapours of some organic compounds, contained in residual gas of some electro-vacuum devices, can produce positive ions due to thermal ionization on electrodes at relatively low temperatures. E Ya Zandberg et al, Izv AN SSSR SW Fiz. 35 (2), 1971, 334-340 (in Ruxsiun). 31 746. Application of laser welding in the manufacture of electrovacuum devices. (USSR) The results of tests of the application 01‘ Iascr welding in the rnan~~fl~cturc of electro-vacuum devices arc presented. Some advantages of
abstracts
735-746
most effective method is to control directly the properties of the CdSe-insulator surface by means of an interlayer which has a strong affinity with oxygen. Such a layer can be made of a Si,O,, material, in which the quantity y is smaller than that corresponding to the stoichiometric composition of the oxide. The uncompensated Si contained in the layer is able to bond the oxygen adsorbed on the Cd& surface and therefore lowers the concentration of negative surface charges. The results of experiments indicate that this method provides good electrical properties of thin-film transistors as well as good manufacturing reproducibility. J Adamcik and J Schroffel, Teslu Electronics, 4 (4), I97 I, 107-l I I. 30 735. High-temperature stable thin-film thermocouples. (USSR) Inertia-less thin-film thermocouples are used for high temperature measurement in nonstationary processes. For measurement of the temperature of metallic components ,a nickel film is vacuum deposited on the component, which serves as second electrode. Qualitative investigation of the oxidation and diffusion processes at 800 and 1000 C in vacuum condensed nickel films showeh that vacuum treatment of the films at 1000°C and I .3 x lo-” Pa does not result in decrease of their thickness. Results obtained by thermal treatment in air permit determination of the minimum thickness of the nickel film providing operation of the thin-film thermocouple for the determined time. With nickel film thickness of 30 jtm the thermocouple can be used for 5 hours at IOOO’C. L S Palatnik et al, lzmerit Tekh, No 7, I97 I, 3 1-33 (in Russian). 30 736. Influence of nitrogen and oxygen on predominant crystallite orientation in vacuum condensates of chromium on amorphous suhstrates. (USSR) The influence of nitrogen and oxygen contained in residual gas on the predominant crystallite orientation in vacuum condensates of chromium on glass substrates, is investigated. With increasing oxygen partial pressure from 9 x IO-’ to 1 x 1O-5 torr, a rapid change of axial textures occurs in films, in succession: (1 IO), (I 1I) and (112). Increase of the nitrogen partial pressure from 1 x 1Om6 to 3 x 10e3 torr does not influence the conditions of occurrence of the (11I) texture in the film. The cbserved phenomena are explained by selective adsorption of the tested gases by different faces of face-centred-cubic lattice of chromium, nonmonotonic dependence of the condensation coefficient of chromium on the thickness of the adsorbed layer of active gas, and also by the nature of nitrogen and oxygen chemisorption on chromium. V S Kogan and A L Seryugin, Fiz Met Metalloved, 32 (I), I97 I, 203205 (in Rmsiun). 30 737. Measurement of the evaporation rate by thermionic currents. (USSR) A method for measurement of the evaporation rate in the preparation of thin films by thermal evaporation in vacuum is considered. The method is based on measurement of the ionic current emitted during the thermal evaporation of metals. Construction of an instrument suitable for this measurement is presented. A A Vasilkovskiy and P N Golfenshteyn, Izmerit Tekh, No 2, 197 1, 8% 91 (in Russian). 30 738. Optical constants of thin gold films. (USSR) Optical constants of granular thin gold films deposited on carefully cleaned quartz substrates in vacuum at 10m5 torr with a deposition rate of 50 to 100 A/set are investigated. Gold was evaporated from tungsten boats. Structure of the gold films was observed in an electron microscope. I N Shklyarevskiy et al, Optika Spektroskop, 31 (3). Sept 197 I, 41441 8 (in Russian). 30 739. An investigation of the structure of non-crystalline films of nickel, cobalt, and cobalt-phosphorus by electron diffraction. (Germany) Non-crystalline thin films of nickel and cobalt have been prepared by vapour deposition onto liquid-nitrogen-cooled substrates in vacua at lO-5 torr, whilst a cobalt-phosphorus alloy has been produced by electroless deposition. An electron diffraction study of these samples has been undertaken. It is found that a perfect dense random packing of atoms is not obtained since it is not possible to violate the distance of closest atomic approach observed in the crystalline state. (England) L B Davies and P J Grundy, Phys Sfat Sol (a), 8 (I ), Nov 197 I, I89~mI Y7. 244
740. Deposition of boron nitride films on silicon substrates and their utilization as diffusion sources. (Germany) Boron nitride films are deposited on silicon substrates by meails 01 spark discharge in hydrogen and nitrogen. The quartz deposition apparatus with elcctrodcs containing boron is described. It is shown that the boron nitride films used as diffusion source give well reproducible boron distributions with homogeneous surface concentrations. The boron profiles correspond to a Gaussian distribution. H J Schnabel and F Fleischer, P/r.~,.sStat So/(a), 8 (I), Nol: 1971. 71-78 (if? Geumnlr). 30 741. Investigation of structure of vacuum evaporated films of NiFe alloys. (Poland) Vacuum evaporated films of NiFe alloy containing 79.3 per cent of Ni, are investigated. The filn-s were deposited in a magnetic field of 9500 A/m at substrate temperatures from 293 to 673’ K with deposition rate of I.1 nmjsec. It is found that grain-size increases with increasing substrate temperature. Chemical composition of the films is uniform as was determined with the aid of X-ray microanalyzer. W Babinski et al, Arc11 H/rt/~, 16 (2), lY71, 173-185 (i/l Polisl~). 30 742. Influence of ultrasonic vibrations on the condensation process during vacuum deposition. (USSR) Influence of ultrasonic vibrations, excited in the substrate perpendicularly to the deposition plane, on the condensation process of vacuum evaporated thin metallic films, is investigated. It is shown that ultrasonic vibrations increase the deposition rate and the film thickness. V P Severdenko et al, lIohl AlGad Nuuh Bel SSR, 15 (8), I97 I, 68969 1 (in Russim). 30 743. Photoemissive determination of the barrier protile in AI-A&O,-AI tunnel junctions. (Germany) Barrier profiles in AI-A&O,,-AI tunnel junctions are determined on a basis of photoemission measurements. Glass slides with pitchpolished and carefully cleaned surfaces w’ere used as substrates. During evaporation of the Al electrodes the pressure did not exceed 5 /\ IO-’ torr. The oxide film was grown by plasma oxidation in an oxygen glow discharge at about 5h lo-” torr. The edge of the oxidized base electrode was coated with an evaporated LiF or SiO film. The thickness of top Al electrodes was of the order of 50 A. Using this procedure, diodes with high stability and an excellent reproducibility of the electrical properties were obtained. The photoemission measurements were made at 77’ K using conventional ac techniques at a frequency of 22.6 Hz. With this arrangement photocurrents of 10~” A could be measured at dark currents of 10m7 A. B Korneffel and W Ludwig, PhJvs Stat Sol (a), 8 (I ), Nov 197 I, I49- 160. 30 (Roumania) 744. Deposition of thin films by cathodic sputtering. A vacuum apparatus for deposition of thin films by cathodic sputtering of materials in glow discharge is described. Sputtering is performed in a glass bell jar placed on a metallic plate. F D Constantinescu et al, Slur/ si Cevr Fiz, 23 (5), I97 I, 609-612 (i/r Rorrmanian). 31. EVACUATION
AND SEALING
31 745. Reactions in chemisorbed layers of polyatomic molecules on emitters observed by means of surface ionization and evaluation of (USSR) ionization potentials of reaction products. Emission data derived from the Langmuir-Saha formula are used to evaluate the ionization potentials of radicals and particles with additional hydrogen atoms. The reactions of organic compounds on tungsten oxides were investigated at 1 % IO-’ torr using the surface ionization method. It is concluded that vapours of some organic compounds, contained in residual gas of some electro-vacuum devices, can produce positive ions due to thermal ionization on electrodes at relatively low temperatures. E Ya Zandberg et al, Izv AN SSSR SW Fiz. 35 (2), 1971, 334-340 (in Ruxsiun). 31 746. Application of laser welding in the manufacture of electrovacuum devices. (USSR) The results of tests of the application 01‘ Iascr welding in the rnan~~fl~cturc of electro-vacuum devices arc presented. Some advantages of