- Email: [email protected]
829. Vapour-deposited borides of group IVA metals
Classified abstracts 812-833 rates of 60 Ajsec on Vycor substrates at room temperature lo-storr. FKKieseial,
Tram AIME233
at about
(IO), 1965.1899-1900. 30
812. A tantalum thin film active filter.
A J Drew and F G Tarbin, ZEE Confpubl,
24,1965.
Thin single crystal films of InSb and CdS were prepared by the cathode sputtering method on single crystals NaCl, pyrophyllite, etc, substrates. The structure of the films was investigated by the electron microscope and electrical measurements. 7(9),
1965.2875-2877,
(in Russian). 30
815. Deposition of silicon on insulating substrates.
(USA)
The pyrolysis of silane and the vacuum evaporation of silicon have been used for the deposition of Si films on various substrates, with one objective being to minimize autodoping and diffusion effects. T L Chu et al, Westinghouse pages.
Electric
Corp. Pittsburg,
July 1965,
98 30
816. Mask chamber means for vacuum deposition device.
(USA)
The apparatus is for vacuum-depositing thin film circuits. A circuit requiring several depositions may be fabricated quickly and with great accuracy within a vacuum chamber without breaking the chamber vacuum. The mask changer may be set up for hand operation or it may be motorized so as to perform all of its operations automatically. E Byron, US Patent 3,207,126,21 Sept 1965. 30 817. Channellmg of 13-keV D+ ions in gold crystals.
(USA)
Single-crystal films of gold, about 7OOA thick and with a (001) orientation, were prepared by vacuum deposition. C J Andreen et al, Phys Letters, 19 (2). 1965,116-118. 30 818. Laser effects on vacuum surfaces.
824. Thin film densities.
(USA)
Thin films of Al, Au, KCl, and CsI were prepared by thermal evaporation in a diffusion pumped, freon refrigerator baffled hell jar system at pressures ranging from 2 x lo-’ to 1O-L torr. The data reported, using direct methods of measurement, was obtained during a calibration of a quartz crystal monitor and is in agreement with the data of Wolter and Hartman. J Edgecumhe, J Vat Sci Tech, 3 (I), Jan-Feb 1966,28-30. 30 825. Producing multi-layer filters.
(USA)
After calculating film designs on a computer, equipment is set-up and calibrated to attain regulated deposition rates for each material. Process and control functions are then automated. G C Olson and R C Brown, ReslDevelop, Nov 1965, 52-54. 826. Evaporation of silicon from molybdenum perature and in hard vacuum. (USA)
30 silicides at high tem-
The nature of the degradation of MO disilicide coatings on MO at 3110’ to 4000°F in hard vacuum (lO_’ torr) was investigated. Degradation occurred as a selective silicon loss by the successive transformations: MoSi, + Mo,Si, -+ Mo,Si + MO. G R Blair et al, J Amer Ceramic Sot, 48 (8), 1965,430. 827. Growth of y-tungsten oxide whiskers by vapour (USA) E G Wolf, J Amer Ceramic Sot, 48 (4). 1965,221-222. 828. Thermoelectric I USA)
properties
of vacuum-evaporated
30 deposition.
Pb-Te
Dee 1965,56.
30 : 45 819. Technique for solderable thin films on sapphire reliable to 4.2”K. J C North and R C Buschert, Rev Scient Znstrum, 37 (I), Jan 1966, 122-123. 30 820. Compact high current evaporation source. (USA) R T Gallaand W Wilson, Rev Scient Znstrum, 36 (12). Dee 1965,1897.
30 films.
Reports on the effects of evaporation parameters on the thennoelectric properties of lead telluride films prepared from doped Pb-Te alloys. A J Mountvala 651.
and G Abowitz, J Amer Ceramic
Sot, 48 (12).
1965, 30
829. Vapourdeposited
borides of group IVA metals.
(USA)
The formation of vapour deposited TiB,, ZrB,, and HfBa at 1400°C was studied with respect to the influence of process variables on structure and stoichiometry. J J Gebhardt and R F Cree, JAmer CeramicSoc, 48 (5)) 1965,262-266
: 31 : 33
(USA)
Several experimental approaches are used in parallel to provide an understanding of the interaction mechanism between a laser beam and a surface in ultrahigh-vacuum. L P Levine et al, Res/Develop,
1965, 30
30 813. Temperature dependence of the critical dimensions which must be reached by the grains composing a vacuum-deposited silver film in order to allow its crystallization. (USA) C Reale, Phys Lefters, 18 (2), 1965,106-107. 30 814. Preparation of thin films of intermetallic compounds by the cathode sputtering method. (USSR)
Fiz TverdTela,
M M Butcher and E A D White, J Amer Ceramic 492-493.
(USA) Sot, 48 (9).
(Greaf Britain)
Fabrication of a thin film integrated circuit version of a simple lowpressure filter, equivalent to a single constant-K section, in order to make frequency selective networks at low frequencies. Tantalum films were deposited on a flat glass substrate by cathodic sputtering. The properties of the thin film and design considerations are discussed.
V EYarasovaeral,
30 823. Vapour-phase growth of thin corundum crystals.
830. AC resistivity of anodic oxide films on valve metals. Britain) G C Wood and C Pearson, Nature, 208, I965,547.
30 (Great
30 831. The surface of Cu-Ni alloy films.
(USA)
30 821. Thin film strain-gauge transducers.
Simultaneous
(USA)
Thin-film strain-gauge transducers increase the capabilities and performance characteristics of transducers. This paper describes (1) the principle of basic strain-gauge transducers, (2) the research, development and manufacture of the new thin-film strain-gauge transducers, and (3) the advantages of this latest development in the transducer technology. P R Perino, Znstrum ControlSystems, 38 (12), Dee Z965,119-121. 822. Optical thickness silicon. (USA)
measurement
of thin transparent
films
30 on
The thickness of thin transparent films on reflecting substrates is determined by an interference technique using a spectrophotometer. The method is rapid, routine, non-destructive and precise to i 100 A for layers over 1000 ,&thick. F Reizman, J Appl Phys, 36 (12) I Dee I965,3804-3807.
control of many vacuum deposition sources.
(USA)
General article, using techniques already described in the literature to control the multiplicity of vacuum deposition sources under exact conditions. R P Reigert, Semiconductor Products and Solid State Tech, 8 (II), Nov 1965,25-31. 30 : 41 833. Measurement of volume ratio of alloy film. (Japan) The volume ratio of alloy deposits from vacuum-evaporated materials was directly obtained by a simple optical measurement of the film thickness ratio of stepwise films. A screening wire, 0.1 mm diameter (tungsten) was placed on the substrate surface before the alloy was deposited from multiple evaporation sources. The results compare favourably with the X-ray fluorescence method showing a maximum difference of 20 per cent. Causes of the difference are discussed including the absorption of nickel Ka lines by chromium 279
Tram AIME233
at about
(IO), 1965.1899-1900. 30
812. A tantalum thin film active filter.
A J Drew and F G Tarbin, ZEE Confpubl,
24,1965.
Thin single crystal films of InSb and CdS were prepared by the cathode sputtering method on single crystals NaCl, pyrophyllite, etc, substrates. The structure of the films was investigated by the electron microscope and electrical measurements. 7(9),
1965.2875-2877,
(in Russian). 30
815. Deposition of silicon on insulating substrates.
(USA)
The pyrolysis of silane and the vacuum evaporation of silicon have been used for the deposition of Si films on various substrates, with one objective being to minimize autodoping and diffusion effects. T L Chu et al, Westinghouse pages.
Electric
Corp. Pittsburg,
July 1965,
98 30
816. Mask chamber means for vacuum deposition device.
(USA)
The apparatus is for vacuum-depositing thin film circuits. A circuit requiring several depositions may be fabricated quickly and with great accuracy within a vacuum chamber without breaking the chamber vacuum. The mask changer may be set up for hand operation or it may be motorized so as to perform all of its operations automatically. E Byron, US Patent 3,207,126,21 Sept 1965. 30 817. Channellmg of 13-keV D+ ions in gold crystals.
(USA)
Single-crystal films of gold, about 7OOA thick and with a (001) orientation, were prepared by vacuum deposition. C J Andreen et al, Phys Letters, 19 (2). 1965,116-118. 30 818. Laser effects on vacuum surfaces.
824. Thin film densities.
(USA)
Thin films of Al, Au, KCl, and CsI were prepared by thermal evaporation in a diffusion pumped, freon refrigerator baffled hell jar system at pressures ranging from 2 x lo-’ to 1O-L torr. The data reported, using direct methods of measurement, was obtained during a calibration of a quartz crystal monitor and is in agreement with the data of Wolter and Hartman. J Edgecumhe, J Vat Sci Tech, 3 (I), Jan-Feb 1966,28-30. 30 825. Producing multi-layer filters.
(USA)
After calculating film designs on a computer, equipment is set-up and calibrated to attain regulated deposition rates for each material. Process and control functions are then automated. G C Olson and R C Brown, ReslDevelop, Nov 1965, 52-54. 826. Evaporation of silicon from molybdenum perature and in hard vacuum. (USA)
30 silicides at high tem-
The nature of the degradation of MO disilicide coatings on MO at 3110’ to 4000°F in hard vacuum (lO_’ torr) was investigated. Degradation occurred as a selective silicon loss by the successive transformations: MoSi, + Mo,Si, -+ Mo,Si + MO. G R Blair et al, J Amer Ceramic Sot, 48 (8), 1965,430. 827. Growth of y-tungsten oxide whiskers by vapour (USA) E G Wolf, J Amer Ceramic Sot, 48 (4). 1965,221-222. 828. Thermoelectric I USA)
properties
of vacuum-evaporated
30 deposition.
Pb-Te
Dee 1965,56.
30 : 45 819. Technique for solderable thin films on sapphire reliable to 4.2”K. J C North and R C Buschert, Rev Scient Znstrum, 37 (I), Jan 1966, 122-123. 30 820. Compact high current evaporation source. (USA) R T Gallaand W Wilson, Rev Scient Znstrum, 36 (12). Dee 1965,1897.
30 films.
Reports on the effects of evaporation parameters on the thennoelectric properties of lead telluride films prepared from doped Pb-Te alloys. A J Mountvala 651.
and G Abowitz, J Amer Ceramic
Sot, 48 (12).
1965, 30
829. Vapourdeposited
borides of group IVA metals.
(USA)
The formation of vapour deposited TiB,, ZrB,, and HfBa at 1400°C was studied with respect to the influence of process variables on structure and stoichiometry. J J Gebhardt and R F Cree, JAmer CeramicSoc, 48 (5)) 1965,262-266
: 31 : 33
(USA)
Several experimental approaches are used in parallel to provide an understanding of the interaction mechanism between a laser beam and a surface in ultrahigh-vacuum. L P Levine et al, Res/Develop,
1965, 30
30 813. Temperature dependence of the critical dimensions which must be reached by the grains composing a vacuum-deposited silver film in order to allow its crystallization. (USA) C Reale, Phys Lefters, 18 (2), 1965,106-107. 30 814. Preparation of thin films of intermetallic compounds by the cathode sputtering method. (USSR)
Fiz TverdTela,
M M Butcher and E A D White, J Amer Ceramic 492-493.
(USA) Sot, 48 (9).
(Greaf Britain)
Fabrication of a thin film integrated circuit version of a simple lowpressure filter, equivalent to a single constant-K section, in order to make frequency selective networks at low frequencies. Tantalum films were deposited on a flat glass substrate by cathodic sputtering. The properties of the thin film and design considerations are discussed.
V EYarasovaeral,
30 823. Vapour-phase growth of thin corundum crystals.
830. AC resistivity of anodic oxide films on valve metals. Britain) G C Wood and C Pearson, Nature, 208, I965,547.
30 (Great
30 831. The surface of Cu-Ni alloy films.
(USA)
30 821. Thin film strain-gauge transducers.
Simultaneous
(USA)
Thin-film strain-gauge transducers increase the capabilities and performance characteristics of transducers. This paper describes (1) the principle of basic strain-gauge transducers, (2) the research, development and manufacture of the new thin-film strain-gauge transducers, and (3) the advantages of this latest development in the transducer technology. P R Perino, Znstrum ControlSystems, 38 (12), Dee Z965,119-121. 822. Optical thickness silicon. (USA)
measurement
of thin transparent
films
30 on
The thickness of thin transparent films on reflecting substrates is determined by an interference technique using a spectrophotometer. The method is rapid, routine, non-destructive and precise to i 100 A for layers over 1000 ,&thick. F Reizman, J Appl Phys, 36 (12) I Dee I965,3804-3807.
control of many vacuum deposition sources.
(USA)
General article, using techniques already described in the literature to control the multiplicity of vacuum deposition sources under exact conditions. R P Reigert, Semiconductor Products and Solid State Tech, 8 (II), Nov 1965,25-31. 30 : 41 833. Measurement of volume ratio of alloy film. (Japan) The volume ratio of alloy deposits from vacuum-evaporated materials was directly obtained by a simple optical measurement of the film thickness ratio of stepwise films. A screening wire, 0.1 mm diameter (tungsten) was placed on the substrate surface before the alloy was deposited from multiple evaporation sources. The results compare favourably with the X-ray fluorescence method showing a maximum difference of 20 per cent. Causes of the difference are discussed including the absorption of nickel Ka lines by chromium 279